公开(公告)号：JP2002201226A

公开(公告)日：2002-07-19

申请号：JP2000400932

申请日：2000-12-28

Applicant: JSR CORP

Inventor： NAGAI TOMOKI ,  GOTO KENTARO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C08F212/14 ,  C08F232/08 ,  C08K5/00 ,  C08L25/18 ,  C08L45/00

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition which exhibits high transmission of various radiations, especially of far-ultraviolet rays represented by KrF excimer laser, and is excellent in sensitivity, resolution, adhesion to substrates, and dry etching resistance; and a copolymer used therefor. SOLUTION: The copolymer has at least one acid-decomposable group, repeating units represented by formula (1) (wherein R1 is H or methyl; R2 is H, methyl or hydroxyl; and n is an integer of 0-2), and repeating units represented by formula (2) (wherein R3 to R10 are each independently H or a monovalent organic group). The radiation-sensitive resin composition contains the copolymer and a radiation-sensitive acid generator.

公开(公告)号：JP2002023370A

公开(公告)日：2002-01-23

申请号：JP2000204082

申请日：2000-07-05

Applicant: JSR CORP

Inventor： NISHIMURA YUKIO ,  O ISAMU ,  KOBAYASHI HIDEKAZU ,  SHIOTANI TAKEO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C08F12/22 ,  C08K5/00 ,  C08L25/18 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a polymer having very small absorption to radiation and useful as a resin component in a radiation sensitive resin composition suitable particularly for a chemical amplification type resist and to provide a radiation sensitive resin composition capable of ensuring rectangularity of a pattern even in a small pattern size, having high sensitivity to various radiations (by which a small amount of exposure energy is needed), giving a pattern free of a change of line width and a T shape due to variation in PED (post exposure time delay) and excellent also in resolution. SOLUTION: The polymer has repeating units of formula (1) (where R1 is a

公开(公告)号：JP2001290274A

公开(公告)日：2001-10-19

申请号：JP2000107183

申请日：2000-04-07

Applicant: JSR CORP

Inventor： DOUKI KATSUJI ,  KAJITA TORU ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C08F32/00 ,  C08F220/00 ,  C08F222/06 ,  C08K5/00 ,  C08K5/092 ,  C08K5/12 ,  C08L33/00 ,  C08L35/00 ,  C08L45/00 ,  C08L101/00 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition excellent particularly in pattern shape as a chemical amplification type resist and excellent also in balance of characteristics including sensitivity and resolution. SOLUTION: The radiation sensitive resin composition contains (A) an alkali- insoluble or slightly alkali-soluble acid dissociable group-containing resin which is made alkali-soluble when the acid dissociable group is dissociated, (B) a radiation sensitive acid generating agent and (C) a compound of formula (l) [where R1 and R2 are each H, an optionally substituted 1-20C alkyl or -CH2 COOR3 (R3 is a 1-18C alkyl)].

公开(公告)号：JP2001288268A

公开(公告)日：2001-10-16

申请号：JP2000107207

申请日：2000-04-07

Applicant: JSR CORP

Inventor： IWAZAWA HARUO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C08G77/14 ,  C08K5/00 ,  C08L83/06 ,  G03F7/075

Abstract: PROBLEM TO BE SOLVED: To provide a copolymerized polysiloxane high in transparency at wavelengths not longer than 193 nm and excellent in dry etching resistance and a radiation sensitive resin composition containing the same. SOLUTION: The copolymerized polysiloxane is represented by a copolymerized polysiloxane having partially a ladder structure, obtained through the co-condensation of a trifunctional silane compound containing an acid- dissociation organic group such as 2-t-butoxycarbonyl ethyl trimethoxy silane and/or a bifunctional siloxane compound containing an acid-dissociation organic group such as 2-t-butoxycarbonyl ethyl methyl dimethoxy silane and a trifunctional siloxane compound such as methyl trimethoxy silane. The radiation sensitive resin composition contains (A) a resin which comprises the copolymerized polysiloxane and is insoluble in alkali turning soluble upon the acid dissociation of the acid-dissociation organic group and (B) a radiation sensitive acid generator.

公开(公告)号：JP2001147531A

公开(公告)日：2001-05-29

申请号：JP32809199

申请日：1999-11-18

Applicant: JSR CORP

Inventor： DOUKI KATSUJI ,  KAJITA TORU ,  SHIMOKAWA TSUTOMU

IPC: H01L21/027 ,  G03F7/039

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition excellent in dry etching resistance, sensitivity, resolution, etc., as a chemical amplification type resist, capable of avoiding a change of the line width of a resist pattern due to a change of the time elapsed from exposure to post-exposure heating and having superior process stability. SOLUTION: The radiation sensitive resin composition contains (A) an alkali- insoluble or slightly alkali-soluble acid dissociable group-containing resin comprising a copolymer of a norbornene derivative typified by 8- hydroxymethyltetracyclo [4.4.0.12,5.17,10]dodec-3-ene, itaconic anhydride and a (meth)acrylic acid derivative typified by a compound of formula 1 or 2 and (B) a radiation sensitive acid generating agent. The resin A is made alkali- soluble when the acid dissociable group is dissociated.

公开(公告)号：JP2001109158A

公开(公告)日：2001-04-20

申请号：JP29150799

申请日：1999-10-13

Applicant: JSR CORP

Inventor： DOUKI KATSUJI ,  MURATA KIYOSHI ,  KAJITA TORU ,  SHIMOKAWA TSUTOMU

IPC: H01L21/027 ,  G03F7/039

Abstract: PROBLEM TO BE SOLVED: To obtain a radiation sensitive resin composition having high transparency to radiation as a chemical amplification type resist, excellent in basic physical properties as a resist such as dry etching resistance, sensitivity, resolution and pattern shape, causing no development defects in microfabrication and capable of producing a semiconductor device in a high yield. SOLUTION: The radiation sensitive resin composition contains (A) an alkali- insoluble or hardly alkali-soluble acid-dissociable group-containing resin typified by 8-hydroxymethyltetracyclo[4.4.0.12,5.17,10]dodeca-3-ene/maleic anhydride/t-butyl (meth)acrylate copolymer and (B) a radiation sensitive acid generating agent. The resin A is made alkali-soluble when the acid-dissociable group is dissociated.

公开(公告)号：JP2013083998A

公开(公告)日：2013-05-09

申请号：JP2012272754

申请日：2012-12-13

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NAGAI TOMOKI ,  KOBAYASHI EIICHI ,  SHIMOKAWA TSUTOMU

IPC: G03F7/004 ,  C07F7/10 ,  G03F7/038 ,  G03F7/039

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive composition which is excellent in resolution, environmental durability and storage stability as a chemically amplified resist sensitive to active radiations, for example, ultraviolet rays such as g-lines or i-lines, a KrF excimer laser, an ArF excimer laser, an F2 excimer laser, far-ultraviolet rays represented by EUV, electron beams, or the like.SOLUTION: A radiation-sensitive resin composition contains a compound in which one or more hydrogen atoms bonded to a nitrogen atom of a compound having such structure that at least one hydrogen atom is bonded to the nitrogen atom is protected by a specified group.

Abstract translation: 要解决的问题：提供对作为对活性辐射敏感的化学放大抗蚀剂的分辨率，环境耐久性和储存稳定性优异的辐射敏感性组合物，例如，诸如g线或i线的紫外线 KrF准分子激光器，ArF准分子激光器，F2准分子激光器，由EUV表示的远紫外线，电子束等。 解决方案：辐射敏感性树脂组合物包含其中与具有至少一个氢原子键合至氮原子的结构的化合物的氮原子键合的一个或多个氢原子受到特定基团保护的化合物 。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012186233A

公开(公告)日：2012-09-27

申请号：JP2011047029

申请日：2011-03-03

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： YASUDA YOSHITOMO ,  OKAZAKI MASAHIRO ,  SHIMOKAWA TSUTOMU

IPC: H01L31/04 ,  H01G4/35 ,  H01L51/42 ,  H01L51/50 ,  H05B33/00 ,  H05B33/04 ,  H05B33/10

CPC classification number: Y02E10/549 ,  Y02P70/521

Abstract: PROBLEM TO BE SOLVED: To provide a device which facilitates variation development of the shape, or the like, and can be manufactured by a simple process, and to provide a manufacturing method therefor.SOLUTION: The device comprises one or a plurality of linear elements 1, and an insulating material 2 covering the linear elements 1. Each linear element 1 includes a linear core material 5 at least the surface of which has conductivity, one or a plurality of functional layers 4 covering the linear core material 5, and a conductive layer 3 covering the functional layers 4. The functional layer is a silicon layer consisting of a pn junction or a pin junction, or an organic layer consisting of an organic electron acceptor and organic electron donor, and is used as a photoelectric conversion device.

Abstract translation: 要解决的问题：提供一种促进形状等的变化发展的装置，并且可以通过简单的工艺制造，并提供其制造方法。 解决方案：该装置包括一个或多个线性元件1和覆盖线性元件1的绝缘材料2.每个线性元件1包括至少其表面具有导电性的线性芯材5，一个或一个 覆盖线状芯材5的多个功能层4和覆盖功能层4的导电层3.功能层是由pn结或pin结构成的硅层或由有机电子受体构成的有机层 和有机电子给体，并用作光电转换装置。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011053369A

公开(公告)日：2011-03-17

申请号：JP2009200955

申请日：2009-08-31

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SHIMOKAWA TSUTOMU ,  KAI TOSHIYUKI ,  MARUYAMA KEN

IPC: G03F7/038 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a negative radiation-sensitive resin composition capable of stably forming a chemically amplified negative resist film which is effectively sensitive to EB (electron beam) or EUV (extreme ultraviolet radiation), is excellent in roughness, etching resistance and sensitivity, and capable of stably forming a high-definition fine pattern. SOLUTION: The negative radiation-sensitive resin composition comprises: an arene-based compound (A) represented by general formula (1) or (2) (wherein a plurality of Rs each independently denote H or 1-8C alkyl, provided that at least one of the plurality of Rs is 1-8C alkyl; and a plurality of Xs each independently denote 1-8C alkylene); an acid crosslinking agent (B); an acid generator (C); an acid diffusion-controlling agent (D); and a solvent (E). COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供能够稳定地形成对EB（电子束）或EUV（极紫外线辐射）有效敏感的化学放大型负性抗蚀剂膜的负型辐射敏感性树脂组合物，其粗糙度优异， 耐蚀刻性和灵敏度，并且能够稳定地形成高分辨率精细图案。 解决方案：负辐射敏感性树脂组合物包含：由通式（1）或（2）表示的芳族基化合物（A）（其中多个R 5各自独立地表示H或1-8C烷基，提供 所述多个R s中的至少一个是1-8C烷基;多个X各自独立地表示1-8C的亚烷基）; 酸交联剂（B）; 酸发生剂（C）; 酸扩散控制剂（D）; 和溶剂（E）。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010266886A

公开(公告)日：2010-11-25

申请号：JP2010148420

申请日：2010-06-30

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： CHIBA TAKASHI ,  NAKAGAWA DAIKI ,  SAKAKIBARA HIROKAZU ,  DOKOCHI HIROSHI ,  SUGIURA MAKOTO ,  UKO TOMOHIRO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/11 ,  C08F20/00 ,  G03F7/38 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To form an overlay film that is applied on a photoresist without inducing intermixing with the photoresist film, maintains stable coating without elution in a medium upon liquid immersion lithography, has a contact angle as large as ≥70° with respect to an immersion medium, having no degradation in a pattern shape when dry exposure, not liquid immersion lithography, is carried out, and can be easily dissolved in an alkali developing solution. SOLUTION: An overlay film composition is used to form a pattern. The composition is a copolymer for a liquid immersion overlay, containing repeating units having a carboxyl group by 20 to 60 mol% in the whole repeating units and having a weight average molecular weight of 2,000 to 100,000 measured by gel permeation chromatography. The copolymer is obtained by copolymerizing a (meth)acrylate having a group including a fluorine atom in a side chain thereof. Further, the composition is obtained by copolymerizing a hydroxyl group-containing (meth)acrylate. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了形成施加在光致抗蚀剂上而不引起与光致抗蚀剂膜混合的覆盖膜，在液浸光刻时保持稳定的涂层而不在介质中洗脱，具有大于≥70°的接触角 相对于浸渍介质，当进行干式曝光，而不是液浸光刻时，其图案形状没有劣化，并且可以容易地溶解在碱性显影溶液中。 解决方案：使用覆盖膜组合物来形成图案。 该组合物是用于液浸层的共聚物，其包含在整个重复单元中具有20至60mol％的羧基的重复单元，并且通过凝胶渗透色谱法测量的重均分子量为2,000至100,000。 共聚物通过在其侧链中共聚具有含氟原子的基团的（甲基）丙烯酸酯而获得。 此外，通过使含羟基的（甲基）丙烯酸酯共聚合得到组合物。 版权所有（C）2011，JPO＆INPIT