公开(公告)号：US11149346B2

公开(公告)日：2021-10-19

申请号：US16244906

申请日：2019-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun Kim ,  Hyeonjin Shin ,  Kyung-Eun Byun ,  Keunwook Shin ,  Changseok Lee ,  Seunggeol Nam ,  Sungjoo An ,  Janghee Lee ,  Jeonil Lee ,  Yeonchoo Cho

IPC: C23C16/26 ,  C01B32/186 ,  C23C14/02 ,  C23C16/56 ,  C23C14/06

Abstract: Provided are methods of directly growing a carbon material. The method may include a first operation and a second operation. The first operation may include adsorbing carbons onto a substrate by supplying the carbons to the substrate. The second operation may include removing unreacted carbon residues from the substrate after suspending the supplying the carbons of the first operation. The two operations may be repeated until a desired graphene is formed on the substrate. The substrate may be maintained at a temperature less than 700° C. In another embodiment, the method may include forming a carbon layer on a substrate, removing carbons that are not directly adsorbed to the substrate on the carbon layer, and repeating the two operations until desired graphene is formed on the substrate. The forming of the carbon layer includes supplying individual carbons onto the substrate by preparing the individual carbons.

公开(公告)号：US11088077B2

公开(公告)日：2021-08-10

申请号：US16866033

申请日：2020-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae Song ,  Seunggeol Nam ,  Yeonchoo Cho ,  Seongjun Park ,  Hyeonjin Shin ,  Jaeho Lee

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522

Abstract: Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

公开(公告)号：US11069619B2

公开(公告)日：2021-07-20

申请号：US16238208

申请日：2019-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunggeol Nam ,  Hyeonjin Shin ,  Keunwook Shin ,  Changhyun Kim ,  Kyung-Eun Byun ,  Hyunjae Song ,  Eunkyu Lee ,  Changseok Lee ,  Alum Jung ,  Yeonchoo Cho

IPC: H01L23/532 ,  H01L23/528 ,  H01L23/522

Abstract: An interconnect structure and an electronic device including the interconnect structure are disclosed. The interconnect structure may include a metal interconnect having a bottom surface and two opposite side surfaces surrounded by a dielectric layer, a graphene layer on the metal interconnect, and a metal bonding layer providing interface adhesion between the metal interconnect and the graphene layer. The metal bonding layer includes a metal material.

公开(公告)号：US10996556B2

公开(公告)日：2021-05-04

申请号：US16004585

申请日：2018-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Hyeonjin Shin ,  Seongjun Jeong ,  Seongjun Park

IPC: G03F1/62 ,  G03F1/64

Abstract: A pellicle configured to protecting a photomask from external contaminants may include a metal catalyst layer and a pellicle membrane including a 2D material on the metal catalyst layer, wherein the metal catalyst layer supports edge regions of the pellicle membrane and does not support a central region of the pellicle membrane. The metal catalyst layer may be on a substrate, such that the substrate and the metal catalyst layer collectively support the edge region of the pellicle membrane and do not support the central region of the pellicle membrane. The pellicle may be formed based on growing the 2D material on the metal catalyst layer and etching an inner region of the metal catalyst layer that supports the central region of the formed pellicle membrane.

公开(公告)号：US20200350442A1

公开(公告)日：2020-11-05

申请号：US16811549

申请日：2020-03-06

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Sanghyun Jo ,  Heejun Yang ,  Hyeonjin Shin ,  Shoujun Zheng

IPC: H01L29/88 ,  H01L29/267 ,  H01L29/66 ,  H01L47/00 ,  G01K7/16 ,  G01J1/42 ,  G01N27/22 ,  G01N27/04

Abstract: A resonant tunneling device includes a first two-dimensional semiconductor layer including a first two-dimensional semiconductor material, a first insulating layer on the first two-dimensional semiconductor layer; and a second two-dimensional semiconductor layer on the first insulating layer and including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material.

公开(公告)号：US20200350256A1

公开(公告)日：2020-11-05

申请号：US16933544

申请日：2020-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok Lee ,  Hyeonjin Shin ,  Seongjun Park ,  Donghyun Im ,  Hyun Park ,  Keunwook Shin ,  Jongmyeong Lee ,  Hanjin Lim

IPC: H01L23/532

Abstract: Example embodiments relate to a wiring structure, a method of forming the same, and an electronic device employing the same. The wiring structure includes a first conductive material layer and a nanocrystalline graphene layer on the first conductive material layer in direct contact with the metal layer.

公开(公告)号：US10770990B2

公开(公告)日：2020-09-08

申请号：US15589091

申请日：2017-05-08

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Kyungeun Byun ,  Jaeyoung Kim ,  Minsu Seol ,  Hyeonjin Shin ,  Jeongmin Baik ,  Woojung Yang ,  Byeonguk Ye ,  Jaewon Lee ,  Jinpyo Lee ,  Kyeongnam Kim

IPC: H02N1/04

Abstract: A triboelectric generator includes a first electrode and a second electrode spaced apart from each other, a first charging part on the first electrode, a second charging part on the second electrode, and a grounding unit. The first charging part and the second charging part may be configured to contact each other through a sliding motion. The grounding unit may be configured to intermittently connect a charge reservoir to the second charging part. The grounding unit may be configured to vary the electric potential of the second charging part so as to amplify current flowing between electrodes of the triboelectric generator.

公开(公告)号：US10719010B2

公开(公告)日：2020-07-21

申请号：US16235446

申请日：2018-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae Song ,  Hyeonjin Shin

IPC: G03B27/62 ,  G03B27/42 ,  G03F1/62 ,  G03F1/64 ,  G03F1/48 ,  G03F7/20 ,  G03F1/22

Abstract: Provided are a pellicle for a photomask, which protects the photomask from external contamination and an exposure apparatus including the pellicle for the photomask. The pellicle for the photomask includes a pellicle membrane provided spaced apart from the photomask. The pellicle membrane includes a semiconductor having a two-dimensional (2D) crystalline structure.

公开(公告)号：US10685844B2

公开(公告)日：2020-06-16

申请号：US16036113

申请日：2018-07-16

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation SUNGKYUNKWAN UNIVERSITY

Inventor： Sangwon Kim ,  Changsik Song ,  Dongcheol Jeong ,  Minsu Seol ,  Hyeonjin Shin ,  Dongwook Lee ,  Taewoo Kim ,  Juhyen Lee ,  Hyejin Cho

IPC: H01L21/308 ,  H01L29/16 ,  C07B37/12 ,  G03F7/004 ,  H01L21/311 ,  G03F7/16 ,  G03F7/027 ,  H01L21/033 ,  G03F7/09 ,  C08L101/02 ,  B82Y30/00 ,  C07C15/20 ,  C07C39/14 ,  C07C63/337 ,  H01L29/66

Abstract: Provided are a hardmask composition, a method of forming a pattern using the hardmask composition, and a hardmask formed using the hardmask composition. The hardmask composition includes a polar nonaqueous organic solvent and one of: i) a mixture of graphene quantum dots and at least one selected from a diene and a dienophile, ii) a Diels-Alder reaction product of the graphene quantum dots and the at least one selected from a diene and a dienophile, iii) a thermal treatment product of the Diels-Alder reaction product of graphene quantum dots and the at least one selected from a diene and a dienophile, or iv) a combination thereof.

公开(公告)号：US20200032388A1

公开(公告)日：2020-01-30

申请号：US16244906

申请日：2019-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun Kim ,  Hyeonjin Shin ,  Kyung-Eun Byun ,  Keunwook Shin ,  Changseok Lee ,  Seunggeol Nam ,  Sungjoo An ,  Janghee Lee ,  Jeonil Lee ,  Yeonchoo Cho

IPC: C23C16/26 ,  C01B32/186 ,  C23C14/06 ,  C23C16/56 ,  C23C14/02

Abstract: Provided are methods of directly growing a carbon material. The method may include a first operation and a second operation. The first operation may include adsorbing carbons onto a substrate by supplying the carbons to the substrate. The second operation may include removing unreacted carbon residues from the substrate after suspending the supplying the carbons of the first operation. The two operations may be repeated until a desired graphene is formed on the substrate. The substrate may be maintained at a temperature less than 700° C. In another embodiment, the method may include forming a carbon layer on a substrate, removing carbons that are not directly adsorbed to the substrate on the carbon layer, and repeating the two operations until desired graphene is formed on the substrate. The forming of the carbon layer includes supplying individual carbons onto the substrate by preparing the individual carbons.