Abstract:
A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.
Abstract:
A composite material comprises a plurality of cores of material selected from the group comprising carbides, nitrides, carbonitrides, cemented carbides, cemented nitrides, cemented carbonitrides and mixtures thereof, dispersed in a matrix. The matrix comprises the components for making an ultra-hard material, such as diamond or cBN abrasive particles, and a suitable binder. The ultra-hard material is polycrystalline in nature and is typically PCD or PcBN. The cores are typically provided as individual particles or in the form of granules. The granules may be further coated with a second coating, which may be a similar material to that of the cores or of an ultra-hard material of a different grade to that of the first coating. The composite material typically takes on a honeycomb structure of a hard material and cores within the pores of the honeycomb structure bonded to the honeycomb structure. The pores of the honeycomb structure may be ordered or random. A method of producing the composite material and a method of producing a tool component incorporating such a material are also provided.
Abstract:
A method for producing a semiconductor diamond containing boron by the high pressure synthesis method, wherein a graphite material to be converted to the semiconductor diamond is mixed with boron or a boron compound, formed and fired, in such a way that the resultant graphite material contains a boron component uniformly dispersed therein and has an enhanced bulk density, a high purity and a reduced content of hydrogen.
Abstract:
A method for producing a semiconductor diamond containing boron by the high pressure synthesis method, wherein a graphite material to be converted to the semiconductor diamond is mixed with boron or a boron compound, formed and fired, in such a way that the resultant graphite material contains a boron component uniformly dispersed therein and has an enhanced bulk density, a high purity and a reduced content of hydrogen.
Abstract:
Supported polycrystalline compacts having improved shear strength, impact, and fracture toughness properties, and methods for making the same under high temperature/high pressure (HT/HP) processing conditions. The method involves a HT/HP apparatus formed of a generally cylindrical reaction cell assembly having an inner chamber of predefined axial and radial extents and containing pressure transmitting medium, and a charge assembly having axial and radial surfaces and formed of at least one sub-assembly comprising a mass of crystalline particles adjacent a metal carbide support layer. The charge assembly is disposed within the chamber of the reaction cell assembly, with the pressure transmitting medium being interposed between the axial and radial surfaces of the charge assembly and the extents of the reaction cell chamber to define an axial pressure transmitting medium thickness, L h , and a radial pressure transmitting medium thickness, L r , the ratio of which, L h /L r being selected as less than 1. The reaction cell assembly (100) containing the charge assembly then is subjected to HT/HP conditions selected as effective to sinter the crystalline particles into a polycrystalline compact layer and to bond the polycrystalline compact layer at an interface to the metal carbide support layer for forming a metal carbide supported polycrystalline compact. The supported compact is characterized as having an essentially constant or increasing residual compressive stress on the surface of its compact layer as portions of a predefined thickness, W, of its support layer, as measured from the interfaced, are incrementally removed.
Abstract:
L'invention se rapporte à un ensemble presse à vide à courant électrique pulsé (10), qui fournit des impulsions électriques de courte durée et de puissance élevée à un échantillon sélectionné (11), lequel est simultanément soumis à une compression mécanique. Une presse hydraulique (14) applique une force compressive mécanique à un élément de presse rapporté (12) contenant l'échantillon (11). Le courant électrique pulsé est fourni par une unité d'alimentation (16) et le vide est produit par une unité (18) prévue à cet effet. Le courant électrique pulsé est appliqué à travers l'échantillon (11) le long d'une voie électrique (49) se caractérisant par une inductance et une résistance très basses. La voie électrique préférée (49) utilise exclusivement des parties conductrices à plaques parallèles et des parties de lignes coaxiales. L'ensemble (10) est destiné à fournir des températures très élevées de courte durée et est conçu notamment pour la production de diamant synthétique.
Abstract:
Sintermetallkörper (1, 3) mit großem Querschnitt, die in bestimmten Bereichen ihrer Oberfläche bzw. ihres Querschnittes extrem hoch belastet werden, wie Preßwerkzeuge, halten dieser Beanspruchung besser stand, wenn sie unter optimierten Bedingungen gesintert werden, in dem sie erfindungsgemäß bei oder nach dem Pressen und vor dem Sintern mit Kanälen bzw. Bohrungen (8) versehen werden, die eine bessere Ausdampfung von Bindemittel, einen besseren Gasaustausch und eine bessere Evakuierung ermöglichen, wobei die Kanäle bzw. Bohrungen (8) von den im Gebrauch weniger belasteten Bereichen der Oberfläche durch weniger belastete Bereiche des Querschnittes geführt sind.
Abstract:
비다이아몬드 결정에서 고압 고온(HP/HT)으로 결함을 제거하거나 스트레인을 경감시키는 방법은 결함을 갖는 결정과, 압력 매질을 제공함으로써 시작한다. 단결정에서 결함의 제거 또는 스트레인의 경감 중 하나 이상을 위해 충분한 시간 동안 충분한 고압 고온의 반응 조건하에서 처리하기 위해, 상기 결정과 압력 매질을 고압 셀에 배치하여 고압 장치에 배치한다.