Jet engine test cell structure
    142.
    发明公开
    Jet engine test cell structure 失效
    Testzellestrukturfürein Strahltriebwerk

    公开(公告)号:EP0717278A3

    公开(公告)日:1998-08-12

    申请号:EP95119399

    申请日:1995-12-08

    Inventor: LONG DEAN F

    CPC classification number: G01M15/00 F01D25/30 G01M9/04

    Abstract: A jet engine test cell capable of dissipating infrasound includes an engine test section (18), an augmentor (24) and an exhaust stack (28) having a structure (33) near its open end (31) for dissipating infrasound.

    Abstract translation: 能够散发次声的喷气发动机测试单元包括发动机测试部分(18),增压器(24)和在其开口端(31)附近具有用于散发次声的结构(33))的排气叠(28)。

    MASKS FOR LITHOGRAPHIC PATTERNING USING OFF-AXIS ILLUMINATION
    144.
    发明公开
    MASKS FOR LITHOGRAPHIC PATTERNING USING OFF-AXIS ILLUMINATION 失效
    PRODUCING平版印刷图案利用光板岩面罩

    公开(公告)号:EP0744044A1

    公开(公告)日:1996-11-27

    申请号:EP95909535.0

    申请日:1995-02-09

    CPC classification number: G03F1/36 G03F7/70125 G03F7/70433

    Abstract: In a lithographical tool utilizing off-axis illumination, masks to provide increased depth of focus and minimize CD differences between certain features are disclosed. A first mask for reducing proximity effects between isolated and densely packed features and increasing depth of focus (DOF) of isolated features is disclosed. The first mask comprises additional lines (214) referred to as scattering bars, disposed next to isolated edges. The bars are spaced a distance from isolated edges such that isolated and densely packed edge gradients substantially match so that proximity effects become negligible. The width of the bars is set so that a maximum DOF range for the isolated feature is achieved. A second mask, that is effective with quadrupole illumination only, is also disclosed. This mask 'boosts' intensity levels and consequently DOF ranges for smaller square contacts so that they approximate intensity levels and DOF ranges of larger elongated contacts. Increasing the intensity levels in smaller contacts reduces critical dimension differences between variably sized contact patterns when transferred to a resist layer. The second mask comprises additional openings, referred to as anti-scattering bars, disposed about the square contact openings. The amount of separation between the edge of the smaller contact and the anti-scattering bars determines the amount of increased intensity. The width of the anti-scattering bars determines the amount of increase in DOF range. Both scattering bar and anti-scattering bars are designed to have widths significantly less than the resolution of the exposure tool so that they do not produce a pattern during exposure of photoresist.

    A BURST MODE MEMORY ACCESSING SYSTEM
    145.
    发明公开
    A BURST MODE MEMORY ACCESSING SYSTEM 失效
    SHOCK操作存储器系统

    公开(公告)号:EP0701733A1

    公开(公告)日:1996-03-20

    申请号:EP94919985.0

    申请日:1994-04-28

    CPC classification number: G11C7/1039 G11C5/025

    Abstract: A large burst mode memory (10) accessing system (15) includes N discrete sub-memories (11, 12) and three main I/O ports (17, 18, 19). Data is stored in the sub-memories so that the sub-memories (11, 12) are accessed depending on their proximity to the main I/O ports (17, 18, 19). Three parallel pipelines (1, 2, 3) provide a data path to/from the main I/O ports (17, 18, 19) and the sub-memories (11, 12). The first pipeline (1) functions to couple address/control signals to the memories such that adjacent sub-memories are accessed in half cycle intervals. The second pipeline (2) functions to propagate accessed data from the sub-memories to the main I/O ports such that data is outputted from the main output port every successive clock cycle. The third pipeline (3) propagates write data to the memories such that data presented at the input of the third pipeline on successive clock cycles is written into successive sub-memories. Redundancy circuits preserve data integrity without memory access interruption.

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