公开(公告)号：KR1020100054540A

公开(公告)日：2010-05-25

申请号：KR1020080113501

申请日：2008-11-14

Applicant: 삼성전자주식회사

Inventor： 문경식 ,  안정착 ,  임무섭 ,  최성호 ,  이강선

IPC: H04N5/369

CPC classification number: H04N5/341 ,  G01C3/08 ,  G01S7/4816 ,  G01S17/89 ,  H04N5/3696 ,  H04N5/3745

Abstract: PURPOSE: A pixel circuit preventing the inflow of an unnecessary signal is provided to reduce the size of the system and pixel by forming a depth signal and color signal using a same photo diode. CONSTITUTION: A photo diode produces a first optical electric charge and a second optical electric charge. The first optical electric charge is used for the detection of the distances with the subject. The second optical electric charge is used for the detection of the color of the subject. A depth signal generator(103) creates at least one or more depth signal for detecting the distance based on the first optical electric charge. A color signal generator(105) creates the color signal for detecting the color based on the first optical electric charge.

Abstract translation: 目的：提供防止不必要信号流入的像素电路，通过使用相同的光电二极管形成深度信号和颜色信号来减小系统和像素的尺寸。 构成：光电二极管产生第一光电荷和第二光电荷。 第一光电荷用于检测与被摄体的距离。 第二光电荷用于检测被检体的颜色。 深度信号发生器（103）创建至少一个或多个深度信号，用于基于第一光电荷检测距离。 彩色信号发生器（105）基于第一光电荷产生用于检测颜色的颜色信号。

公开(公告)号：KR1020100046766A

公开(公告)日：2010-05-07

申请号：KR1020080105772

申请日：2008-10-28

Applicant: 삼성전자주식회사

Inventor： 안정착 ,  정태섭

IPC: H01L27/146

CPC classification number: H04N9/045 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H04N5/2173 ,  H04N5/772

Abstract: PURPOSE: An image sensor is provided to reduce light loss by preventing crosstalk due to incident light which passes through the color filter and is diffracted. CONSTITUTION: An image sensor comprises a first pixel, a second pixel and at least one light reflection pattern. The light reflection pattern inputs the incident light from the outside to the corresponding first or second pixel. A photo-electro converter(110R) is formed on the semiconductor substrate and generates electrons according to the light from the outside. A color filter(340R,340G) is formed on the upper side of the photo-electro converter. A light guide is positioned between the photo-electro converter and the color filter and induces the light from the outside through the color filter to the photo-electro converter in correspondence to the photo-electro converter.

Abstract translation: 目的：提供一种图像传感器，通过防止由于通过滤色器并入射的入射光引起的串扰而减少光损失。 构成：图像传感器包括第一像素，第二像素和至少一个光反射图案。 光反射图案将入射光从外部输入到相应的第一或第二像素。 光电转换器（110R）形成在半导体衬底上并根据来自外部的光产生电子。 在光电转换器的上侧形成滤色器（340R，340G）。 导光体位于光电转换器和滤色器之间，并且对应于光电转换器将来自外部的光通过滤色器引导到光电转换器。

公开(公告)号：KR1020100007257A

公开(公告)日：2010-01-22

申请号：KR1020080067817

申请日：2008-07-11

Applicant: 삼성전자주식회사

Inventor： 이경호 ,  안정착 ,  김이태 ,  이욱 ,  김범석 ,  정태섭

IPC: H01L27/146 ,  H01L21/302

CPC classification number: H01L27/14603 ,  H01L27/14627 ,  H01L27/14683

Abstract: PURPOSE: An image sensor and method for manufacturing the same are provided to improve light concentration efficiency. CONSTITUTION: The substrate(110) includes the first area (b) and the second part (a,c). The first area has the level difference higher than the second part. In the upper part of the first area, the pixel array area(130) is formed. The surrounding circuit areas(120 1,120 2) are formed on the upper part of the second part. The first area has the level difference higher than the second part. Therefore, the aspect ratio of the pixel array area diminishes.

Abstract translation: 目的：提供一种图像传感器及其制造方法，以提高光的集中效率。 构成：衬底（110）包括第一区域（b）和第二部分（a，c）。 第一个区域的水平差高于第二个区域。 在第一区域的上部形成有像素阵列区域（130）。 周边电路区域（120,120 2）形成在第二部分的上部。 第一个区域的水平差高于第二个区域。 因此，像素阵列区域的纵横比减小。

公开(公告)号：KR1020090097000A

公开(公告)日：2009-09-15

申请号：KR1020080022138

申请日：2008-03-10

Applicant: 삼성전자주식회사

Inventor： 김세영 ,  안정착 ,  김이태 ,  이경호 ,  장윤호

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14605 ,  H01L27/14636

Abstract: A cmos image sensor is provided to prevent the uniformity of photo diode property by forming a conductive line arranged on an active region in relation to a light block layer. In a cmos image sensor, a pixel array includes a first pixel obtaining an effective pixel and a second pixel which is not used as an effective pixel. A conductive line(220) consisting of at least one layer is arranged on a first conductive region. Light block layers(240,250) are arranged on a second conductive region in correspondence to the second pixel. A first pixel supplies a signal and outputs it through a conductive line(230) arranged on the second conductive line. The pixel array is composed of the effective region and an optical block region where the second pixel is arranged.

Abstract translation: 提供了一个cmos图像传感器，以通过形成相对于光阻挡层布置在有源区上的导线来防止光电二极管性质的均匀性。 在cmos图像传感器中，像素阵列包括获得有效像素的第一像素和不用作有效像素的第二像素。 由至少一层构成的导线（220）布置在第一导电区域上。 光阻挡层（240,250）被布置在对应于第二像素的第二导电区域上。 第一像素提供信号并通过布置在第二导线上的导线（230）输出信号。 像素阵列由有效区域和布置第二像素的光学块区域组成。

公开(公告)号：KR1020090087644A

公开(公告)日：2009-08-18

申请号：KR1020080013009

申请日：2008-02-13

Applicant: 삼성전자주식회사

Inventor： 임무섭 ,  안정착 ,  문경식 ,  최성호 ,  이강선

IPC: H04N5/374

CPC classification number: H04N5/37452 ,  H04N5/353 ,  H04N5/3594

Abstract: A pixel circuit array is provided to share one global reset transistor, thereby reducing an area size of a CMOS image sensor. A transmission transistor(101) receives a photo charge from a photo diode through one end. The transmission transistor transmits the transmitted photo charge through the other one end. One end of a reset transistor(103) is serially connected to the other one end of the transmission transistor. The reset transistor is turned on or off in response to a reset control signal. A source follower transistor(105) receives a signal outputted from the other one end of the reset transistor through a gate. A selection transistor(107) is serially connected to the source follower transistor. The selection transistor is turned on or off in response to a selection control signal.

Abstract translation: 提供像素电路阵列以共享一个全局复位晶体管，由此减小CMOS图像传感器的面积尺寸。 传输晶体管（101）通过一端从光电二极管接收光电荷。 透射晶体管通过另一端传输所发送的光电荷。 复位晶体管（103）的一端串联连接到传输晶体管的另一端。 响应于复位控制信号，复位晶体管导通或截止。 源极跟随器晶体管（105）通过栅极接收从复位晶体管的另一端输出的信号。 选择晶体管（107）串联连接到源极跟随器晶体管。 选择晶体管响应于选择控制信号而导通或截止。

公开(公告)号：KR1020090085828A

公开(公告)日：2009-08-10

申请号：KR1020080011683

申请日：2008-02-05

Applicant: 삼성전자주식회사

Inventor： 김범석 ,  안정착

IPC: H01L27/146 ,  H01L21/76

CPC classification number: H01L27/1463 ,  H01L27/14623 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor and a manufacturing method thereof are provided to reduce an electrical crosstalk and an optical crosstalk at a time by blocking an incident light in a photo diode of adjacent unit pixels. An image sensor(300) includes a semiconductor substrate(201), a plurality of photo diodes(202), and a plurality of isolation regions. A plurality of photo diodes is formed inside the semiconductor substrate. A plurality of isolation regions is formed inside a plurality of trenches for isolating a plurality of photo diodes. Each isolation region includes a first isolation film(203a) and a second isolation film(301). The first isolation film is formed according to a trench surface. The second isolation film is formed inside the first isolation film in order to block an incident light from an adjacent photo diode.

Abstract translation: 提供图像传感器及其制造方法，以通过阻挡相邻单位像素的光电二极管中的入射光来一次减少电串扰和光串扰。 图像传感器（300）包括半导体衬底（201），多个光电二极管（202）和多个隔离区域。 在半导体衬底内形成多个光电二极管。 多个隔离区域形成在多个沟槽内，用于隔离多个光电二极管。 每个隔离区域包括第一隔离膜（203a）和第二隔离膜（301）。 第一隔离膜根据沟槽表面形成。 第二隔离膜形成在第一隔离膜内部，以阻挡来自相邻光电二极管的入射光。

公开(公告)号：KR100871687B1

公开(公告)日：2008-12-05

申请号：KR1020040008926

申请日：2004-02-11

Applicant: 삼성전자주식회사

Inventor： 안정착 ,  임수헌

IPC: H04N5/341

CPC classification number: H04N5/374 ,  H04N5/347

Abstract: 서브 샘플링 모드에서 디스플레이 품질을 개선한 고체 촬상 소자 및 그 구동 방법이 개시된다. 상기 고체 촬상 소자는, 서브 샘플링 모드 시에, APS 어레이에서, 홀수번째 행들 또는 짝수번째 행들의 광소자로부터 광전 변환된 영상신호를 열단위로 합하여 출력한다. 이에 따라, 아날로그 합성 회로가 상기 합해진 영상신호들을 홀수번째끼리 및 짝수번째끼리 재차 합하여 출력함으로써, 수직 해상도를 낮출 수 있다. 또는, 상기 합해진 영상신호들을 디지털 신호로 변환한 후, 디지털 합성 회로에서 홀수번째끼리 및 짝수번째끼리 재차 합하여 출력함으로써, 수직 해상도를 낮출 수 있다.

公开(公告)号：KR100842335B1

公开(公告)日：2008-07-01

申请号：KR1020070008318

申请日：2007-01-26

Applicant: 삼성전자주식회사

Inventor： 김범석 ,  안정착 ,  문경식 ,  이은규 ,  겟뜨만

IPC: H04N5/365

CPC classification number: H04N5/335

Abstract: A CMOS image sensor and a driving method thereof are provided to perform the digital correction of a digital signal and output the corrected digital signal to an ISP in a CIS itself, thereby obtaining a high-quality image even in various ISPs. A CIS(Complementary Metal Oxide Semiconductor Image Sensor)(100) comprises a pixel array(110), an ADC(Analog to Digital Converter)(120), and a digital logic circuit unit(130). A signal outputted from the CIS is outputted to an ISP(Image Signal Processor)(30) through a standard interface. The pixel array concentrates light, generates photoelectric charges, and outputs an analog signal based on the generated photoelectric charges to the ADC. The ADC converts the outputted analog signal into a digital signal. The digital logic circuit unit corrects the converted digital signal by digital before outputting the converted digital signal to the ISP through the standard interface.

Abstract translation: 提供CMOS图像传感器及其驱动方法来执行数字信号的数字校正，并将校正的数字信号输出到CIS本身的ISP，从而即使在各种ISP中也能获得高质量的图像。 CIS（互补金属氧化物半导体图像传感器）（100）包括像素阵列（110），ADC（模数转换器）（120）和数字逻辑电路单元（130）。 从CIS输出的信号通过标准接口输出到ISP（图像信号处理器）（30）。 像素阵列集中光，产生光电电荷，并将产生的光电电荷的模拟信号输出到ADC。 ADC将输出的模拟信号转换为数字信号。 数字逻辑电路单元通过标准接口将经转换的数字信号输出到ISP之前，通过数字校正转换后的数字信号。

公开(公告)号：KR1020080015310A

公开(公告)日：2008-02-19

申请号：KR1020060076844

申请日：2006-08-14

Applicant: 삼성전자주식회사

Inventor： 김범석 ,  안정착 ,  이종진 ,  문경식 ,  장윤호

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14607 ,  H01L27/14627 ,  H01L27/14685

Abstract: A CMOS image sensor and a manufacturing method thereof are provided to increase the number of pixels by forming inner lenses corresponding to a photodiode region on an interlayer dielectric. A semiconductor substrate has unit pixel areas comprising a photodiode region(112), and an interlayer dielectric is deposited on the semiconductor substrate. Inner lenses(116) corresponding to the photodiode region are provided on the interlayer dielectric. Micro lenses(122) corresponding to the unit pixel region are provided on the inner lenses. The inner lens is a nitride layer or a nitride layer. A planarized layer and a color filter are interposed between the inner lenses and the micro lenses.

Abstract translation: 提供CMOS图像传感器及其制造方法，以通过形成与层间电介质上的光电二极管区域对应的内部透镜来增加像素数量。 半导体衬底具有包括光电二极管区域（112）的单位像素区域，并且在半导体衬底上沉积层间电介质。 对应于光电二极管区域的内透镜（116）设置在层间电介质上。 对应于单位像素区域的微透镜（122）设置在内透镜上。 内透镜是氮化物层或氮化物层。 在内透镜和微透镜之间插入平坦化层和滤色器。

公开(公告)号：KR1020080008543A

公开(公告)日：2008-01-24

申请号：KR1020060067931

申请日：2006-07-20

Applicant: 삼성전자주식회사

Inventor： 고주현 ,  이용제 ,  안정착

IPC: H01L27/146

CPC classification number: H01L27/14616 ,  H01L21/26586 ,  H01L27/14689

Abstract: A CMOS image sensor and a method for manufacturing the same are provided to enhance the quality of the product by increasing the transmission efficiency of charges. A CMOS(Complementary Metal Oxide Semiconductor) image sensor includes an active region, a photo diode and a floating diffusion region(FD), a gate(35) of a transfer transistor(30), and at least one dopant doping region(7). The active region is defined by an element isolation region(20). The photo diode and floating diffusion region are disposed in parallel with the active region. The gate of the transfer transistor is formed to cross over the active region between the photo diode and floating diffusion region. The density of dopant doping regions formed in the active region is varied based on distance with the floating diffusion area.

Abstract translation: 提供CMOS图像传感器及其制造方法，以通过提高电荷的传输效率来提高产品的质量。 CMOS（互补金属氧化物半导体）图像传感器包括有源区，光电二极管和浮动扩散区（FD），转移晶体管（30）的栅极（35）和至少一个掺杂剂掺杂区域（7） 。 有源区由元件隔离区（20）限定。 光电二极管和浮动扩散区域与有源区域平行设置。 转移晶体管的栅极形成为跨越光电二极管和浮动扩散区之间的有源区。 基于与浮动扩散区域的距离，在有源区域中形成的掺杂剂掺杂区域的密度变化。