Abstract:
The present invention relates to a compact external cavity tunable laser apparatus which includes: a substrate; an external cavity tunable reflection part which reflects a laser beam coming from the outside on the substrate and changes and selects the wavelength of the reflected laser beam; an optical fiber part for outputting the laser beam on the substrate; and a high integration light source part which integrates the laser beam inputted from the external cavity tunable reflection part by using a tilt input and output waveguide and a curved waveguide and a straight waveguide in order to match the beam axis of the external cavity tunable reflection part with the beam axis of the optical fiber.
Abstract:
PURPOSE: An optical line terminal (OLT) controlling and monitoring the optical power and wavelength of a downlink wavelength division multiplexing (WDM) optical signal in a bidirectional WDM optical network is provided to increase the quality of a monitoring system by fundamentally blocking the effect of signal distortion. CONSTITUTION: An optical transmitter generates a downlink WDM optical signal. A standard-type wavelength multiplexer multiplexes the wavelength of the downlink WDM optical signal. A circulation-type wavelength demultiplexer (160) demultiplexes the wavelength of the downlink WDM optical signal. An optical receiver (170) outputs a downlink electric signal. A signal processing module (180) controls the optical power and wavelength of a signal from the optical transmitter. [Reference numerals] (100) Central base station; (180) Signal processing module; (700) Remote node; (800) Value particle
Abstract:
PURPOSE: A distribution feedback type laser diode in which an optical mode size convertor is monolithically intergrated and a production method are provided to increase coupling efficiency with an optical fiber by integrating SSC. CONSTITUTION: Number of layers is grown and the layers are composed of a substrate (1), InGaAsP grid layer (2), n-lnP space layer (3), an activated layer (4), P-lnP upper clad layer (5), an etching stoppage layer (6), and p-lnP cap layer (7). Part of the activated layer is etched and a butt layer is created. A tapered area is formed on the butt layer. Manual ridge wave guide layer is etched in a deep ride wave guide shape under the tapered area. A P clad layer (12) and an ohmic layer (13) are grown consecutively on a structure. The deep ridge wave guide buried in the tapered area is formed on the ohmic layer. Polyimide or polymer benzocyclobutene (BCB) is formed on an outer area of the deep ridge waveguide.
Abstract:
PURPOSE: A manufacturing method for an optical wave guide platform in which a monitoring photodiode is integrated in hybrid is provided to monitor the output light of an optical transmitter including optical combination loss generated when bonding a flip chip by bending the monitoring photodiode to an optical wave guide and bonding the flip chip in the upper side cladding layer of a leaky light area in which leaky light generates. CONSTITUTION: A manufacturing method for an optical wave guide platform in which a monitoring photodiode is integrated in hybrid includes the following steps. The lower side cladding layer(101) of an optical wave guide and a core layer(102) are mounted on a substrate(100). The core layer forms a wave guide pattern by using a photolithography and a dry-etching method. At this time, an optical leakage area(200) is formed in a part bending the core layer. The optical wave guide(20) of PLC is formed by depositing an upper side cladding layer(103) on an etched silica core layer(102). A trench is formed by using the photolithography and a dry-etching process in a PLC in which the optical wave guide is formed, and a terrace(104) in which an optical transmitter(30) is flip-chipped is formed. The optical transmitter is bonded in a flip chip bonding in the formed terrace. The monitoring photodiode is laminated on the upper cladding layer.
Abstract:
본 발명은 파장분할다중 방식의 수동형 광통신망 장치를 제공한다. 이 장치는 광 신호를 발생시키는 제1 광원부, 제1 광원부의 광 신호를 일단으로 입력받아 다중화하여 출력하는 제1 다중화/역다중화기, 및 제1 다중화/역다중화기의 타단에 연결된 제1 처핑된 브래그 격자를 포함한다. 제1 처핑된 브래그 격자는 제1 다중화/역다중화기를 통과한 광을 다시 반사시켜 제1 다중화/역다중화기 및 제1 광원부으로 일정 부분 재입력시킬 수 있다. 제1 다중화/역다중화기는 재입력된 광을 스펙트럼 슬라이싱(spectrun slicing)하고, 제1 다중화/역다중화기의 채널 파장을 주발진 파장으로 광원부을 동작시키어 자체 잠김(self-injection locking) 구조를 제공할 수 있다. 처핑된 회절격자 (chirped grating), 자체 잠김 (self-injection locking), 파장분할다중 방식의 수동형 광통신망(WDM-PON:Wavelength Division Multiplexed-Passive Optical Network), 광다중화기, 페브리-페롯 레이저 다이오드 (Fabry-Perot laser diode), 반사형 반도체 광증폭기 (Reflective Semiconductor Optical Amplifier), 파장무의존 광원 (colorless optical source)
Abstract:
PURPOSE: A semiconductor optical device and a manufacturing method thereof are provided to minimize the leakage of a forward current for light amplification with a current breaking unit by forming the current breaking unit in a PNP structure. CONSTITUTION: A first mode converting core(MCC1), a light amplification core(LAC), a second mode converting core(MCC2), and a light modulating core(LMC) are placed on a first mode converting region(10), a light amplification region(20), a second mode converting region(30), and a light modulating region(40) of a semiconductor substrate respectively. A current breaking unit covers a side wall and an upper surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulating core are sequentially arranged in a direction to be butt joint with each other. The current breaking unit includes cladding patterns laminated in order.
Abstract:
PURPOSE: An optical device module is provided to realize high integration and miniaturization using an embedded multi mode interference coupler integrated with a light modulator which has a ridge structure. CONSTITUTION: A semiconductor light amplifier(10) comprises a first active layer(12) and a second active layer(22) which are different. A light modulator(20) modulates a light signal transferred to the second active layer. The second active layer is formed between the light modulator and the semiconductor light amplifier. A multi-mode interference coupler(30) is integrated with the light modulator. The semiconductor light amplifier and the multi-mode interference coupler are connected to a bonding surface(50).
Abstract:
PURPOSE: A wavelength division multiplexed passive optical network apparatus is provided to adopt a wavelength independent light source and a chirped brag grating as the light source of a subscriber interface unit and a center BS(Base Station). CONSTITUTION: A multiplexer(118a) multiplexes the light signal of a light source unit(112a), and a chirped brag grating(124a) is connected to the other end of the multiplexer. The chirped brag grid reflects the light passing through the multiplexer. The brag grating inputs the certain portion of the light as the multiplexer and the light sources again. The multiplexer performs spectrum slicing of re-inputted light, and operates the light source by considering a channel wavelength as a main oscillation wavelength.
Abstract:
회절 격자 커플러를 갖는 반도체 집적회로 및 그 형성 방법을 제공한다. 반도체 집적회로는 회절 격자 아래에 배치된 적어도 하나의 반사체를 포함한다. 반사체는 회절 격자 아래의 피복층 및/또는 반도체 기판 내에 배치될 수 있다. 반사체는 광도파로 아래로 투과된 광신호의 일부를 광도로파로 되돌릴 수 있다. 이에 따라, 반도체 집적회로의 광 커플링 효율성을 향상시킬 수 있다.
Abstract:
광 도파로 구조체 및 그 제조 방법을 제공한다. 이 방법은 전이 영역을 갖는 기판을 준비하고, 기판 상에 전이 영역을 가로지르는 고굴절률 패턴을 형성하고, 기판 상에 전이 영역에서 예각을 이루면서 고굴절률 패턴을 가로지르는 저굴절률 패턴을 형성한 후, 저굴절률 패턴에 의해 노출되는 고굴절률 패턴을 식각하여, 전이 영역에서 저굴절률 패턴과 평행한 일 측벽을 갖는 고굴절률 코어를 형성하는 단계를 포함한다.