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公开(公告)号：US09776853B2
公开(公告)日：2017-10-03
申请号：US15051264
申请日：2016-02-23
Applicant: Freescale Semiconductor, Inc.
Inventor： Robert F. Steimle , Ruben B. Montez
CPC classification number: B81B3/001 , B81B3/0005 , B81B2201/0221 , B81B2201/0235 , B81B2203/0181 , B81B2203/06 , B81C1/0096 , B81C2201/115 , G01P15/0802 , G01P2015/0871 , G01P2015/0874
Abstract: A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of one or both of the surfaces. The increased roughness is provided by forming a micro-masking layer on a sacrificial layer used in formation of the MEMS device, and then etching the surface of the sacrificial layer. The micro-masking layer can be formed using nanoclusters. When a next portion of the MEMS device is formed on the sacrificial layer, this portion will take on the roughness characteristics imparted on the sacrificial layer by the etch process. The rougher surface decreases the surface area available for contact in the MEMS device and, in turn, decreases the area through which stiction can be imparted.
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公开(公告)号：US09628886B2
公开(公告)日：2017-04-18
申请号：US14275337
申请日：2014-05-12
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen
CPC classification number: H04R31/003 , B81B3/0021 , B81B3/0086 , B81B2201/0221 , B81B2201/0257 , B81B2203/0127 , B81B2203/04 , B81C1/00158 , B81C2201/013 , H04R1/08 , H04R19/005 , H04R31/006 , H04R2201/003
Abstract: A MEMS device includes a backplate electrode and a membrane disposed spaced apart from the backplate electrode. The membrane includes a displaceable portion and a fixed portion. The backplate electrode and the membrane are arranged such that an overlapping area of the fixed portion of the membrane with the backplate electrode is less than maximum overlapping.
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143.发明授权公开(公告)号：US09580298B2
公开(公告)日：2017-02-28
申请号：US14883113
申请日：2015-10-14
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Christopher V. Jahnes , Anthony K. Stamper
CPC classification number: B81B3/001 , B81B3/0008 , B81B3/0013 , B81B2201/0221 , B81B2203/0109 , B81B2203/0118 , B81B2203/019 , B81C1/0015 , H01G5/18
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one fixed electrode on a substrate. The method further includes forming a Micro-Electro-Mechanical System (MEMS) beam with a varying width dimension, as viewed from a top of the MEMS beam, over the at least one fixed electrode.
Abstract translation: 公开了微机电系统（MEMS）结构，制造方法和设计结构。 该方法包括在基板上形成至少一个固定电极。 该方法还包括在至少一个固定电极上形成从MEMS光束的顶部观察的具有变化的宽度尺寸的微机电系统（MEMS）光束。
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公开(公告)号：US20160176701A1
公开(公告)日：2016-06-23
申请号：US15044016
申请日：2016-02-15
Applicant: Texas Instruments Incorporated
Inventor： Arun Gupta , William C. McDonald , Adam Fruehling , Ivan Kmecko , Lance Barron , Divyanshu Agrawal , Arthur M. Turner , John C. Ehmke , James C. Baker
CPC classification number: H01G5/16 , B81B3/0008 , B81B3/001 , B81B3/0013 , B81B7/0064 , B81B7/008 , B81B7/02 , B81B2201/016 , B81B2201/0221 , B81B2203/0109 , B81B2203/0118 , B81B2203/0127 , B81B2203/0181 , B81B2203/053 , B81B2203/058 , B81B2203/06 , B81B2207/012 , B81B2207/096 , B81C1/00158 , H01G5/011 , H01G5/40
Abstract: A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.
Abstract translation: 一种MEM致动器装置和形成方法包括致动器元件的阵列。 每个致动器元件具有可移动的顶板和底板。 顶板包括用于中心膜构件运动的中心膜构件和悬臂弹簧。 底板由在中央膜构件下方延伸的两个RF信号线组成。 MEM静电致动器装置包括CMOS晶片，MEM晶片和球接合组件。 互连由球接合到通过MEMS晶片延伸的相关的通硅通孔（TSV）。 RF信号路径包括通过TSV电连接到水平进给杆并且从第一水平进给杆垂直地连接到阵列的每一列中的球形接合。 金属结合环在CMOS晶片和MEMS晶片之间延伸。 射频接地回路从覆盖阵列的接地屏蔽到金属接合环，TSV和球接合完成。
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公开(公告)号：US09290380B2
公开(公告)日：2016-03-22
申请号：US13718614
申请日：2012-12-18
Applicant: Robert F. Steimle , Ruben B. Montez
Inventor： Robert F. Steimle , Ruben B. Montez
CPC classification number: B81B3/001 , B81B3/0005 , B81B2201/0221 , B81B2201/0235 , B81B2203/0181 , B81B2203/06 , B81C1/0096 , B81C2201/115 , G01P15/0802 , G01P2015/0871 , G01P2015/0874
Abstract: A mechanism for reducing stiction in a MEMS device by decreasing surface area between two surfaces that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of one or both of the surfaces. The increased roughness is provided by forming a micro-masking layer on a sacrificial layer used in formation of the MEMS device, and then etching the surface of the sacrificial layer. The micro-masking layer can be formed using nanoclusters. When a next portion of the MEMS device is formed on the sacrificial layer, this portion will take on the roughness characteristics imparted on the sacrificial layer by the etch process. The rougher surface decreases the surface area available for contact in the MEMS device and, in turn, decreases the area through which stiction can be imparted.
Abstract translation: 提供了一种用于通过减小可以紧密接触的两个表面之间的表面积来减小MEMS器件中的静摩擦的机构。 通过增加一个或两个表面的表面粗糙度来实现接触表面积的减小。 通过在用于形成MEMS器件的牺牲层上形成微掩模层，然后蚀刻牺牲层的表面来提供增加的粗糙度。 微掩模层可以使用纳米团簇形成。 当MEMS器件的下一部分形成在牺牲层上时，该部分将通过蚀刻工艺承受赋予牺牲层的粗糙度特性。 较粗糙的表面减小了可用于MEMS器件中的接触的表面积，并且进而降低了可赋予粘性的面积。
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Patent Agency Ranking
公开(公告)号：US09233831B2
公开(公告)日：2016-01-12
申请号：US14520686
申请日：2014-10-22
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Christopher V. Jahnes , Anthony K. Stamper
CPC classification number: B81B3/001 , B81B3/0008 , B81B3/0013 , B81B2201/0221 , B81B2203/0109 , B81B2203/0118 , B81B2203/019 , B81C1/0015 , H01G5/18
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one fixed electrode on a substrate. The method further includes forming a Micro-Electro-Mechanical System (MEMS) beam with a varying width dimension, as viewed from a top of the MEMS beam, over the at least one fixed electrode.
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公开(公告)号：US20150002984A1
公开(公告)日：2015-01-01
申请号：US13931632
申请日：2013-06-28
Applicant: Weng Hong TEH , Qing Ma , Johanna M. Swan , Valluri R. Rao
Inventor： Weng Hong TEH , Qing Ma , Johanna M. Swan , Valluri R. Rao
CPC classification number: H01L25/16 , B81B3/0056 , B81B2201/0221 , H01G5/16 , H01G7/00 , H01L24/24 , H01L2224/04105 , H01L2224/24195 , H01L2224/32245 , H01L2224/73267 , H01L2924/12042 , H01L2924/19041 , H01L2924/19105 , H01L2924/00
Abstract: An apparatus including a die; a carrier coupled to the die; and at least one capacitor positioned in or on the carrier, the at least one capacitor including a first electrode, a second electrode and a dielectric material; and a magnet positioned such that a magnetic field at least partially actuates the second electrode toward the first electrode. A method including disposing a die, a first electrode of a capacitor and a magnet on a sacrificial substrate; forming a dielectric layer on the first electrode; patterning a conductive material coupled to the first electrode; patterning a second electrode on the dielectric layer; and removing the sacrificial substrate. A method including exposing a suspended first electrode of a capacitor in a package to a magnetic field; driving a current in a first direction through the first electrode; and establishing a voltage difference between the first electrode and a second electrode.
Abstract translation: 一种包括模具的设备; 耦合到管芯的载体; 以及位于所述载体中或载体上的至少一个电容器，所述至少一个电容器包括第一电极，第二电极和电介质材料; 以及定位成使得磁场至少部分地致动第二电极朝向第一电极的磁体。 一种方法，包括在牺牲基板上设置管芯，电容器的第一电极和磁体; 在所述第一电极上形成介电层; 图案化耦合到所述第一电极的导电材料; 在所述电介质层上构图第二电极; 并去除牺牲衬底。 一种包括将封装中的电容器的悬置的第一电极暴露于磁场的方法; 沿第一方向驱动电流通过第一电极; 以及在所述第一电极和第二电极之间建立电压差。
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148.发明授权Device containing plurality of smaller MEMS devices in place of a larger MEMS device 有权装置包含多个较小的MEMS器件代替较大的MEMS器件公开(公告)号：US08861218B2
公开(公告)日：2014-10-14
申请号：US12614929
申请日：2009-11-09
Applicant: Charles Gordon Smith , Richard L. Knipe , Vikram Joshi , Roberto Gaddi , Anartz Unamuno , Robertus Petrus Van Kampen
Inventor： Charles Gordon Smith , Richard L. Knipe , Vikram Joshi , Roberto Gaddi , Anartz Unamuno , Robertus Petrus Van Kampen
IPC: H05K1/18 , H01G5/40 , G01P15/135 , H01G5/18 , B81B7/04 , G01P15/125 , G01P15/08
CPC classification number: B81B7/04 , B81B2201/0221 , B81B2201/0235 , B81B2207/053 , G01P15/0802 , G01P15/125 , G01P15/135 , H01G5/18 , H01G5/40
Abstract: Embodiments disclosed herein generally include using a large number of small MEMS devices to replace the function of an individual larger MEMS device or digital variable capacitor. The large number of smaller MEMS devices perform the same function as the larger device, but because of the smaller size, they can be encapsulated in a cavity using complementary metal oxide semiconductor (CMOS) compatible processes. Signal averaging over a large number of the smaller devices allows the accuracy of the array of smaller devices to be equivalent to the larger device. The process is exemplified by considering the use of a MEMS based accelerometer switch array with an integrated analog to digital conversion of the inertial response. The process is also exemplified by considering the use of a MEMS based device structure where the MEMS devices operate in parallel as a digital variable capacitor.
Abstract translation: 本文公开的实施例通常包括使用大量的小MEMS器件来代替单个更大的MEMS器件或数字可变电容器的功能。 大量较小的MEMS器件具有与较大器件相同的功能，但是由于尺寸较小，因此可以使用互补金属氧化物半导体（CMOS）兼容工艺封装在腔中。 通过大量较小器件的信号平均，允许较小器件阵列的精度等同于较大的器件。 通过考虑使用具有惯性响应的集成模数转换的基于MEMS的加速度计开关阵列来举例说明该过程。 还通过考虑使用MEMS器件结构（其中MEMS器件并行地作为数字可变电容器）来使用该过程。
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公开(公告)号：US20140264645A1
公开(公告)日：2014-09-18
申请号：US13831470
申请日：2013-03-14
Applicant: INVENSENSE, INC.
Inventor： Michael Julian Daneman , Martin Lim , Li-Wen Hung , Stephen Lloyd
IPC: H01L27/12
CPC classification number: H01L27/1203 , B81B3/0056 , B81B2201/0221 , B81B2203/053
Abstract: A Micro-Electro-Mechanical Systems (MEMS) device includes a first substrate with a first surface and a second surface, the first substrate including a base layer, a moveable beam disposed on the base layer, at least one metal layer, and one or more standoffs disposed on the base layer such that one or more metal layers are situated on the top surface of the one or more standoffs. The MEMS device further includes a second substrate including one or more metal layers bonded to the one or more standoffs resulting in an electrical connection between at least a portion of the one or more metal layers of the second substrate and one or more of the at least one electrode on the bottom surface and the at least one electrode on the top surface.
Abstract translation: 微电子机械系统（MEMS）装置包括具有第一表面和第二表面的第一基底，第一基底包括基底层，设置在基底层上的可移动光束，至少一个金属层，以及一个或 更多的间隔设置在基底层上，使得一个或多个金属层位于一个或多个支座的顶表面上。 MEMS器件还包括第二衬底，第二衬底包括一个或多个结合到一个或多个支座的金属层，导致在第二衬底的一个或多个金属层的至少一部分与至少一个或多个之间的电连接 底表面上的一个电极和顶表面上的至少一个电极。
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150.发明申请公开(公告)号：US20140175525A1
公开(公告)日：2014-06-26
申请号：US14108901
申请日：2013-12-17
Applicant: Robert Bosch GmbH
Inventor： Ando Feyh , Po-Jui Chen , Markus Ulm
CPC classification number: B81B3/0021 , B81B2201/0221 , B81B2201/0228 , B81C1/00134 , B81C1/00246 , B81C2203/0771
Abstract: A semiconductor device includes a substrate, a first dielectric layer located above the substrate, a moving-gate transducer, and a proof mass. The moving-gate transducer is at least partially formed within the substrate and is at least partially formed within the first dielectric layer. The proof mass includes a portion of the first dielectric layer and a portion of a silicon layer. The silicon layer is located above the first dielectric layer.
Abstract translation: 半导体器件包括衬底，位于衬底上方的第一介电层，移动栅极换能器和校验块。 移动栅极换能器至少部分地形成在衬底内并且至少部分地形成在第一介电层内。 检测质量包括第一电介质层的一部分和硅层的一部分。 硅层位于第一介电层的上方。
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