公开(公告)号：US20180258551A1

公开(公告)日：2018-09-13

申请号：US15761197

申请日：2016-08-31

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Andrea Dittmar ,  Carsten Hartmann ,  Jürgen Wollweber ,  Matthias Bickermann

IPC: C30B29/40 ,  C30B23/06 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06 ,  H01L29/15

CPC classification number: C30B29/403 ,  C30B23/005 ,  C30B23/066 ,  H01L21/02389 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/778 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0206 ,  H01S5/343

Abstract: The invention concerns a method for the production of single crystal aluminium nitride doped with scandium and/or yttrium, with scandium and/or yttrium contents in the range 0.01 atom % to 50 atom % with respect to 100 atom % of the total quantity of the doped aluminium nitride, characterized in that in a crucible, in the presence of a gas selected from nitrogen or a noble gas, or a mixture of nitrogen and a noble gas: a doping material selected from scandium, yttrium, scandium nitride or yttrium nitride or a mixture thereof and a source material formed from aluminium nitride are sublimated and recondensed onto a seed material which is selected from aluminium nitride or aluminium nitride doped with scandium and/or yttrium. The invention also concerns a corresponding device as well as the corresponding single crystal products and their use, whereupon the basis for novel components based on layers or stacks of layers of aluminium gallium nitride, indium aluminium nitride or indium aluminium gallium nitride is generated.

公开(公告)号：US20180019571A1

公开(公告)日：2018-01-18

申请号：US15551758

申请日：2016-02-18

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Joerg FRICKE ,  Jonathan DECKER ,  Paul CRUMP ,  Goetz ERBERT

IPC: H01S5/10 ,  H01S5/042 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/50

CPC classification number: H01S5/1064 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/1203 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/50

Abstract: The invention relates to a laser diode (10) which has at least one active layer (12) which is arranged within a resonator (14) and is operatively connected to a outcoupling element (16), and further at least one contact layer (18) for coupling charge carriers into the active layer (12), wherein the resonator (14) comprises at least a first section (20) and a second section (22), wherein the second section (22) comprises a plurality of separate resistor elements (24) having a specific electrical resistivity greater than the specific electrical resistivity of the regions (26) between adjacent resistor elements (24), wherein a width (W3) of the resistor elements (24) along a longitudinal axis (X1) of the active layer (12) is less than 20 μm, and a projection of the resistor elements (24) on the active layer (12) along the first axis (Z1) overlap with at least 10% of the active layer (12).

公开(公告)号：US20170362738A1

公开(公告)日：2017-12-21

申请号：US15541764

申请日：2015-12-16

Applicant: FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Zbigniew GALAZKA ,  Reinhard UECKER ,  Detlef KLIMM ,  Matthias BICKERMANN

IPC: C30B29/16 ,  C30B15/34 ,  C30B15/08 ,  C30B17/00 ,  C30B11/00

CPC classification number: C30B29/16 ,  C30B11/005 ,  C30B11/006 ,  C30B15/08 ,  C30B15/20 ,  C30B15/34 ,  C30B17/00

Abstract: A method for growing beta phase of gallium oxide (β-Ga2O3) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2′, C2″) in the concentration range (SC) of 5-100 vol. % below the melting temperature (MT) of Ga2O3 or at the melting temperature (MT) or after complete melting of the Ga2O3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the β-Ga2O3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2′, C2″) is maintained within the oxygen concentration range (SC).

公开(公告)号：US20170349625A1

公开(公告)日：2017-12-07

申请号：US15521675

申请日：2015-10-29

Applicant: LUDWIG-MAXIMILIANS-UNIVERSITÄT MÜNCHEN ,  FORSCHUNGSVERBUND BERLIN E.V.

Inventor： Heinrich Leonhardt ,  Jonas Helma ,  Dominik Schumacher ,  Christian Hackenberger

IPC: C07K1/107 ,  C12P21/02 ,  C12P21/00

CPC classification number: C07K1/1075 ,  C12P21/005 ,  C12P21/02 ,  C12Y603/02025

Abstract: The present invention provides means and methods for equipping a polypeptide of interest at its C-terminus with a versatile adaptor amino acid that allows the functionalization of the polypeptide of interest.

公开(公告)号：US09458141B2

公开(公告)日：2016-10-04

申请号：US14869318

申请日：2015-09-29

Applicant: The United States of America, as represented by the Secretary, Department of Health and Human Services ,  Forschungsverbund Berlin E.V.

Inventor： Marvin C. Gershengorn ,  Susanne Neumann ,  Bruce M. Raaka ,  Craig J. Thomas ,  James Inglese ,  Noel T. Southall ,  Steven Titus ,  Wei Zheng ,  Wenwei Huang ,  Gerd Krause ,  Gunnar Kleinau

IPC: A61K51/00 ,  C07D239/88 ,  C07D217/24 ,  A61K31/47 ,  A61P35/00 ,  A61K31/167 ,  A61K31/517 ,  C07C233/01 ,  C07D405/06 ,  C07D239/91 ,  C07D401/06 ,  C07D405/14 ,  C07D487/04 ,  A61K49/00

CPC classification number: C07D405/06 ,  A61K31/517 ,  A61K49/0004 ,  A61K51/00 ,  C07D239/91 ,  C07D401/06 ,  C07D405/14 ,  C07D487/04

Abstract: Disclosed are oxo-hydroquinazolines that are useful as selective TSHR agonists. The compounds may be used for detecting or treating thyroid cancer, or treating a bone degenerative disorder.

公开(公告)号：US09448423B2

公开(公告)日：2016-09-20

申请号：US13910142

申请日：2013-06-05

Applicant: Forschungsverbund Berlin E.V.

Inventor： Thomas Hoffmann ,  Armin Liero ,  Andreas Klehr ,  Sven Schwertfeger

IPC: G02F1/025 ,  G02F1/01

CPC classification number: G02F1/025 ,  G02F1/0121 ,  G02F2201/16

Abstract: The invention discloses a device for selecting pulses comprising an optical waveguide for guiding the optical radiation along an axis; comprising a first electro-optical modulator designed to modulate the optical transparency of the waveguide; comprising a second electro-optical modulator designed to modulate the optical transparency of the waveguide, wherein the first modulator and the second modulator are arranged one after the other on the axis of the waveguide, and further comprising at least one control circuit designed to actuate the first modulator and the second modulator at offset times, and characterized in that a substrate of a semiconductive material is provided, the waveguide and the at least one control circuit are arranged on the substrate.

Abstract translation: 本发明公开了一种用于选择脉冲的装置，该装置包括用于沿轴线引导光辐射的光波导; 包括设计成调制波导的光学透明度的第一电光调制器; 包括设计成调制波导的光学透明度的第二电光调制器，其中第一调制器和第二调制器在波导的轴线上一个接一个地布置，并且还包括至少一个控制电路，其被设计成致动 第一调制器和第二调制器，其特征在于，提供半导体材料的衬底，所述波导和所述至少一个控制电路布置在所述衬底上。

公开(公告)号：US20150253303A1

公开(公告)日：2015-09-10

申请号：US14642776

申请日：2015-03-10

Applicant: MAX-DELBRUECK-CENTRUM FUER MOLEKULARE MEDIZIN ,  Forschungsverbund Berlin e.V.

Inventor： Thomas Jentsch ,  Tobias Stauber ,  Felizia K. Voss

IPC: G01N33/50 ,  C07K14/705

CPC classification number: G01N33/502 ,  C07K14/705 ,  G01N33/6872 ,  G01N2500/10

Abstract: The invention relates to a method for the identification of a channel modulator, such as an agonist or antagonist, that interacts with one or more or LRRC8A, LRRC8B, LRRC8C, LRRC8D and/or LRRC8E and/or protein complexes thereof. The invention further relates to an isolated heteromeric protein complex comprising one or more or LRRC8A, LRRC8B, LRRC8C, LRRC8D and/or LRRC8E for use in such methods, in addition to kits suitable for carrying out such methods. The invention therefore relate preferably to the use of LRRC8 proteins and complexes thereof for the identification of VRAC (VSOAC) modulators.

Abstract translation: 本发明涉及用于鉴定与一种或多种LRRC8A，LRRC8B，LRRC8C，LRRC8D和/或LRRC8E和/或其蛋白复合物相互作用的通道调节剂如激动剂或拮抗剂的方法。 本发明还涉及包含一种或多种的分离的异聚蛋白复合物或用于这些方法的LRRC8A，LRRC8B，LRRC8C，LRRC8D和/或LRRC8E，以及适于实施这些方法的试剂盒。 因此，本发明优选地涉及LRRC8蛋白及其复合物用于鉴定VRAC（VSOAC）调节剂的用途。

公开(公告)号：US08994036B2

公开(公告)日：2015-03-31

申请号：US13864353

申请日：2013-04-17

Applicant: Forschungsverbund Berlin E.V.

Inventor： Tomas Krämer

IPC: H01L23/373 ,  H01L21/48 ,  H01L23/367

CPC classification number: H01L23/3738 ,  H01L21/4871 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/373 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

Abstract: According to the invention, a semiconductor device composite structure is provided which comprises an initial substrate with discrete, integrated devices and a heat removal structure. The heat removal structure comprises: a bond layer which is attached to the initial substrate or the devices, a heat removal structure which is attached on the bond layer and which consists of a material with a specific thermal conductivity which is at least double the level of the average specific heat conductivity of the initial substrate or the devices, and one or more metallic thermal bridges which thermally connect the devices with the heat removal structure via the bond layer. The thermal bridges are designed as vertical through connections (vias) through the bond and heat removal structure. The invention furthermore relates to an associated production method.

Abstract translation: 根据本发明，提供一种半导体器件复合结构，其包括具有分立的集成器件的初始衬底和散热结构。 除热结构包括：附接到初始衬底或器件的接合层，附着在接合层上的散热结构，其由比导热系数的至少两倍的材料组成 初始衬底或器件的平均比热导率以及通过接合层将器件与散热结构热连接的一个或多个金属热桥。 热桥通过焊接和散热结构设计为垂直通孔连接（通孔）。 本发明还涉及相关的生产方法。

公开(公告)号：US20140367734A1

公开(公告)日：2014-12-18

申请号：US14475597

申请日：2014-09-03

Applicant: Forschungsverbund Berlin E.V.

Inventor： Michael KNEISSL ,  Neysha LOBO

IPC: H01L33/56 ,  H01L33/48 ,  H01L33/32 ,  H01L33/38

CPC classification number: H01L33/56 ,  H01L33/32 ,  H01L33/38 ,  H01L33/483 ,  H01L33/54 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: The present invention relates to an encapsulant for ultraviolet light emitting diodes. It is an object of the present invention to provide an encapsulant for UV LEDs emitting below 350 nm resulting in an increased extraction efficiency of the LED. According to the invention, a light emitting diode is disclosed comprising a radiation zone (12) which is electrically connected to a first contact (14) and to a second contact (16), and an encapsulant (18) encapsulating at least part of the radiation zone (12), the first contact (14) and the second contact (16), wherein the encapsulant (18) comprises polydimethylsiloxane.

Abstract translation: 本发明涉及紫外线发光二极管的密封剂。 本发明的目的是提供一种用于发射低于350nm的UV LED的密封剂，从而提高LED的提取效率。 根据本发明，公开了一种发光二极管，其包括电连接到第一触点（14）和第二触点（16）的辐射区（12），以及密封剂（18），其封装至少一部分 辐射区（12），第一接触（14）和第二接触（16），其中密封剂（18）包含聚二甲基硅氧烷。

公开(公告)号：US20140312301A1

公开(公告)日：2014-10-23

申请号：US14357583

申请日：2012-11-09

Applicant: Forschungsverbund Berlin e.V.

Inventor： Oliver Brandt ,  Lutz Geelhaar ,  Vladimir Kaganer ,  Martin Woelz

IPC: H01L29/12 ,  H01L31/0352 ,  H01L29/16 ,  H01L33/06 ,  H01L29/04 ,  H01L29/20

CPC classification number: H01L29/122 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L29/2003 ,  H01L31/035209 ,  H01L33/06 ,  H01L33/18 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described is a method for producing a semiconductor device (100), in which at least one column-shaped or wall-shaped semiconductor device (10, 20) extending in a main direction (z) is formed on a substrate (30), wherein at least two sections (11, 13, 21, 23) of a first crystal type and one section (12, 22) of a second crystal type therebetween are formed in an active region (40), each section with a respective predetermined height (h1, h2), wherein the first and second crystal types have different lattice constants and each of the sections of the first crystal type has a lattice strain which depends on the lattice constants in the section of the second crystal type. According to the invention, at least a height (h2) of the section (12, 22) of the second crystal type and a lateral thickness (D) of the active region (40) is formed perpendicular to the main direction, in such a manner that the lattice strain in one of the sections (11) of the first crystal type also depends on the lattice constants in the other section (13) of the first crystal type. A semiconductor device (100) is also described, having at least one column-shaped or wall-shaped semiconductor element (10, 20) on a substrate (30), which can be produced in particular by means of the stated method.

Abstract translation: 描述了一种半导体器件（100）的制造方法，其中在基板（30）上形成有沿主方向（z）延伸的至少一个柱状或壁状半导体器件（10,20），其中 在有源区域（40）中形成有第一晶体类型的至少两个部分（11,13,21,23）和第二晶体类型的一个部分（12,22），每个部分具有相应的预定高度 h1，h2），其中第一和第二晶体类型具有不同的晶格常数，并且第一晶体类型的每个部分具有取决于第二晶体类型的截面中的晶格常数的晶格应变。 根据本发明，垂直于主方向形成第二晶体类型的部分（12,22）和有源区（40）的横向厚度（D）的至少高度（h2） 第一晶体类型的部分（11）之一的晶格应变也取决于第一晶体类型的另一部分（13）中的晶格常数。 还描述了一种半导体器件（100），其在衬底（30）上具有至少一个柱状或壁状半导体元件（10,20），其特别可以通过所述方法制造。