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公开(公告)号：KR1019970001965B1
公开(公告)日：1997-02-20
申请号：KR1019930006540
申请日：1993-04-19
Applicant: 한국과학기술연구원
IPC: G01K7/16
Abstract: A process for manufacturing a thin film platinum temperature sensor capable of removing platinum remaining at a boundary after laser trimming is disclosed. In the process, a surface of an alumina substrate is cleaned and dried. Platinum is deposited on the alumina substrate in the form of a thin film. The thin film of platinum is heat-treated. An active photosensitive material is spin-coated on the heat-treated thin film of platinum, soft-baked, exposed to helium light, photoprinted, and then hard-baked. The heat-treated thin film of platinum is chemically etched by using an etching solution so that a serpentine type pattern is formed on the thin film of the platinum. A leading wire is connected to both terminals of the formed pattern. The formed pattern is coated by means of a protective film or sealed in a glass or metal pipe.
Abstract translation: 公开了一种能够去除在激光修整之后边界残留的铂的薄膜铂温度传感器的制造方法。 在此过程中，清洁和干燥氧化铝基板的表面。 铂以薄膜的形式沉积在氧化铝衬底上。 铂的薄膜被热处理。 将活性感光材料旋涂在热处理的铂薄膜上，软化，暴露于氦光，照相印刷，然后硬烘烤。 通过使用蚀刻溶液化学蚀刻热处理的铂薄膜，使得在铂的薄膜上形成蛇形型图案。 导线连接到形成图案的两个端子。 形成的图案通过保护膜涂覆或密封在玻璃或金属管中。
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公开(公告)号：KR1019970001259B1
公开(公告)日：1997-02-04
申请号：KR1019960050579
申请日：1996-10-31
Applicant: 한국과학기술연구원
IPC: C04B35/465
Abstract: Dielectric ceramic composition for high-frequency wave is described which has high quality coefficient(Q value) and dielectric constant, and good temperature coefficient of resonance frequency. The dielectric ceramic composition may be represented as following formula: (1-z)(Sr1-yCay)TiO3-zLa(Zn1-x/2Mgx/2Ti1/2)O3, where, the range of x is from 0 to 1.0, the range of y is from 0.01 to 0.99 and the range of z is from 0.4 to 0.7. The dielectric composition according to the invention has dielectric constant of 33.1 to 60.2, Qxfo(GHz) of 25,060 to 66,140, and the temperature coefficient of resonance frequency(TCF) ranging from -39.35 to 83.60 ppm/deg. C, which TCF being able to be controlled at a range of +-10ppm/deg. C depending on amount of addition of impurities, so that the ceramic composition may effectively be used in telecommunication system.
Abstract translation: 描述了具有高质量系数（Q值）和介电常数以及良好的共振频率温度系数的用于高频波的介电陶瓷组合物。 电介质陶瓷组合物可以由下式表示：（1-z）（Sr1-yCay）TiO3-zLa（Zn1-x / 2Mgx / 2Ti1 / 2）O3，其中x的范围为0至1.0， y的范围为0.01〜0.99，z的范围为0.4〜0.7。 根据本发明的电介质组合物的介电常数为33.1〜60.2，Qxfo（GHz）为25,060〜66,140，共振频率（TCF）的温度系数为-39.35〜83.60 ppm / deg。 C，哪个TCF能够控制在+ -10ppm / deg的范围内。 C取决于杂质的添加量，使得陶瓷组合物可以有效地用于电信系统中。
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公开(公告)号：KR1019970001064B1
公开(公告)日：1997-01-25
申请号：KR1019940005128
申请日：1994-03-15
Applicant: 한국과학기술연구원
IPC: C04B35/48
CPC classification number: C04B35/488
Abstract: Tetragonal zirconia polycrystal composite having a high ductility and low- temperature antidegradation properties is manufacturied by mixing nontransposable zirconia with below 60 wt. % of transposable zirconia based on nontransposable zirconia and sintering at 1,550 deg.C for 2-10 hr. Transposable zirconia is poduced by mixing a mixture of 93-97% of ZrO2 and 2-4% of Y2O3 with 1-3% of Nb2O5 or 1-3% OF Ta2O5.
Abstract translation: 具有高延展性和低温抗降解性能的四面体氧化锆多晶复合材料通过将不可转移的氧化锆与低于60wt。 基于非转移性氧化锆的转座氧化锆的％，并在1550℃下烧结2-10小时。 通过将93-97％的ZrO 2和2-4％的Y 2 O 3与1-3％的Nb 2 O 5或1-3％的Ta 2 O 5混合来混合转移的氧化锆。
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公开(公告)号：KR1019970001062B1
公开(公告)日：1997-01-25
申请号：KR1019940013994
申请日：1994-06-21
Applicant: 한국과학기술연구원
IPC: C04B35/46
Abstract: High frequency dielectric material comprises a basic compsn. (1) (1-y) SrTiO3- y(La(1-x)Ndx)(Mg1/2 Ti1/2)O3 (where x=0-0.1, y=0.01-0.99 and z=0.4-0.7)which reduces the dielectric loss.
Abstract translation: 高频电介质材料包括基本组成。 （1）（1-y）SrTiO3-y（La（1-x）Ndx）（Mg1 / 2Ti1 / 2）O3（其中x = 0-0.1，y = 0.01-0.99和z = 0.4-0.7） 降低介电损耗。
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Patent Agency Ranking
公开(公告)号：KR1019970001055B1
公开(公告)日：1997-01-25
申请号：KR1019940015401
申请日：1994-06-30
Applicant: 한국과학기술연구원
IPC: C04B35/45
Abstract: Dielectric composition(1-y)CaTiO3-y(Zn1-x/2Mgx/2Ti1/2)O3 is claimed. In formula x is from 0 to 1.0, y is more than 0.3 at least 0.9. In an example, a mixed powder of CaCO3, La2O3, TiO2, ZnO, and MgO is sintered at 1,050 deg.C for 10 hr, crushed, sintered at 1,200-1,300 deg.C to give a synthetics which is crushed and sintered at 1,500-1,650 deg.C. Measured frequency is 8-12 HGz, temperature range is -15-85 deg.C.
Abstract translation: 要求保护电介质组成（1-y）CaTiO3-y（Zn1-x / 2Mgx / 2Ti1 / 2）O3。 在式x中为0至1.0，y大于0.3至少0.9。 在一个实例中，将CaCO 3，La 2 O 3，TiO 2，ZnO和MgO的混合粉末在1050℃下烧结10小时，在1,200-1300℃下烧结，烧结，得到在1500℃下粉碎和烧结的合成物 -1,650摄氏度 测量频率为8-12 HGz，温度范围为-15-85℃。
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公开(公告)号：KR1019960000824A
公开(公告)日：1996-01-25
申请号：KR1019940015403
申请日：1994-06-30
Applicant: 한국과학기술연구원
IPC: C04B35/46
Abstract: 본 발명은 조성식(1-y)(Sr
1 -
x Ca
x )TiO
3 -yNd(Mg
1/2 Ti
1/2 )O
3 로 로 표시되고, x의 범위가 0.01
x
1.0이고, y의 범위가 0.3
y
0.6인 마이크로ㅠ파용 유전체 조성물을 제공한다. 이 조성물은 유전율이 30 내지 60이고, Q
x f
o (GHz)가 9,500 내지 50,000이며 공진 주파수의 온도 계(TCF)의 범위가 -60 내지 +60ppm/℃이므로, 마이크로파용 유전체 세라믹스가 요구되는 통신 시스템에 적합하게 이용될 수 있다.-
公开(公告)号：KR1019950013345B1
公开(公告)日：1995-11-02
申请号：KR1019930005887
申请日：1993-04-08
Applicant: 한국과학기술연구원
IPC: H01F1/00
Abstract: The anisotropic ferrite magnet is manufactured by (a) mixing ferrite magnetic powder having hexagonal plate type or needle type crystal grain, a plasticizer, a binder and an organic solvent such as polyvinyl butyral, dibutylphthalate, toluene and ethyl alcohol to prepare the slurry, (b) molding a thin plate type ferrite green sheet having 50-1,500 micrometer of the sheet thickness from the slurry with doctor blade method, (c) rolling the molded ferrite green sheet with more than 20% rolling ratio and firing it at 1,100-1,500 deg.C in nitrogen or oxygen atmosphere.
Abstract translation: 通过（a）混合具有六方板型或针状晶粒的铁氧体磁性粉末，增塑剂，粘合剂和有机溶剂如聚乙烯醇缩丁醛，邻苯二甲酸二丁酯，甲苯和乙醇来制备各向异性铁氧体磁体，以制备浆料（ b）用刮刀法从浆料中成型具有片材厚度为50-1,500微米的薄板型铁素体生片，（c）以20％以上的轧制比轧制成型的铁素体生片，并烧成1,100-1,500 在氮气或氧气氛中。
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公开(公告)号：KR1019940026986A
公开(公告)日：1994-12-10
申请号：KR1019930008204
申请日：1993-05-13
Applicant: 한국과학기술연구원
IPC: H01G4/12
Abstract: 본 발명은 마이크로파 및 밀리파 등의 고주파 영역에 있어서 높은 무부하 값(Qu) 및 저온 소결 특성을 갖는 고주파용 유전체 세라믹스 조성물에 관한 것으로서, 이 조성물은 (1-x)[Ba(Mg
1/3 Ta
2/3 )O
3 ]+xBaWO
4 (0.01 x 0.09)로 표시되는 조성식을 갖는다.
본 발명에 의해 제조된 유전체 세라믹스 조성물은 고주파 영역에서 높은 무부하 Q값을 가질 뿐만 아니라, 공진 주파수의 온도 안정성이 조성비 x의 양을 조절함으로써 조절가능하다.
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