公开(公告)号：KR1020100072981A

公开(公告)日：2010-07-01

申请号：KR1020080131554

申请日：2008-12-22

Applicant: 한국전자통신연구원

Inventor： 정우석 ,  유민기 ,  정승묵 ,  황치선 ,  추혜용 ,  조경익

IPC: C23C14/34

Abstract: PURPOSE: A sputtering device is provided to achieve deposition of a large area at low temperature and enable treatment of a flexible substrate. CONSTITUTION: A sputtering device comprises a chamber(100), a loading unit, an inductive coupling plasma radiator(120), and a sputter gun(130). The loading unit is formed within the chamber and loads an object(112). The inductive coupling plasma radiator is formed on a side of the chamber and makes gas flowing in from outside into plasma to be provided to the chamber. The sputter gun is formed within the chamber and loads a target material ionized with the plasma.

Abstract translation: 目的：提供溅射装置以实现在低温下大面积的沉积并且能够处理柔性基板。 构成：溅射装置包括腔室（100），加载单元，感应耦合等离子体辐射器（120）和溅射枪（130）。 装载单元形成在室内并装载物体（112）。 电感耦合等离子体辐射器形成在腔室的一侧，使得从外部流入等离子体的气体被提供到腔室。 溅射枪形成在室内，并加载与等离子体电离的靶材料。

公开(公告)号：KR1020100023187A

公开(公告)日：2010-03-04

申请号：KR1020080081818

申请日：2008-08-21

Applicant: 한국전자통신연구원

Inventor： 조두희 ,  박상희 ,  변춘원 ,  조경익 ,  정승묵 ,  유민기 ,  황치선 ,  추혜용

IPC: C04B35/10 ,  C04B35/453

CPC classification number: C23C14/3407 ,  C04B35/453 ,  C04B35/62615 ,  C04B35/62655 ,  C04B35/632 ,  C04B35/64 ,  C04B2235/3217 ,  C04B2235/3286 ,  C04B2235/3293 ,  C23C14/086

Abstract: PURPOSE: A composition for a sputtering target of an oxide semiconductor thin film, a method for manufacturing the sputtering target, and the sputtering target are provided to obtain a transparent oxide semiconductor film showing high mobility through a low-temperature process less than 300°C. CONSTITUTION: A method for manufacturing a sputtering target comprises the following steps: blending(S11) and crashing raw material powder consisting of aluminum oxide, zinc oxide, and tin oxide; molding(S12) the powder in a desired form; fist calcinating a molding product at 500 - 1000°C; pulverizing and mixing the molding product which is fist calcinated; and molding the mixed powder; sintering(S13) the molding product. Indium oxide is more included in the raw material powder.

Abstract translation: 目的：提供一种用于氧化物半导体薄膜的溅射靶的组合物，溅射靶的制造方法和溅射靶，以获得通过低于300℃的低温工艺显示高迁移率的透明氧化物半导体膜 。 构成：溅射靶的制造方法包括以下步骤：混合（S11）和粉碎由氧化铝，氧化锌和氧化锡组成的原料粉末; （S12）所需形式的粉末; 在500-1000℃煅烧成型产品; 粉碎和混合被锻烧的成型产品; 并成型混合粉末; 烧结（S13）成型品。 氧化铟更多地包含在原料粉末中。

公开(公告)号：KR1020100011167A

公开(公告)日：2010-02-03

申请号：KR1020080072271

申请日：2008-07-24

Applicant: 한국전자통신연구원

Inventor： 오지영 ,  강승열 ,  황치선 ,  김철암 ,  김기현 ,  서경수 ,  안성덕 ,  구재본 ,  심홍구

IPC: B82B3/00 ,  B82Y40/00

CPC classification number: C01B13/14 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2004/64 ,  C09D1/00

Abstract: PURPOSE: A method for manufacturing metal oxide nanoparticle is provided to be applicable in the plastic substrate weak on heat by forming a thin film at relatively low temperature in range of the room temperature to about 100°C. A manufacturing method of the metal oxide nanoparticle is provided to make an electric component including the metal oxide. CONSTITUTION: A method of manufacturing metal oxide nanoparticle comprises: a step(S11) of preparing an alcoholic solution including basic chemical species; a step(S12) of preparing a metal oxide precursor solution; a step(S13) of reacting the metal oxide precursor solution with the mixture of alcoholic solution to form metal oxide nanoparticle; a step(S14) of refining the metal oxide nanoparticle. The alcoholic solution comprises C1-C6 alcohol and basic chemical species is selected in the group consisting of LiOH, NaOH, KOH, NH4OH, their hydrate and their mixture.

Abstract translation: 目的：提供一种制造金属氧化物纳米颗粒的方法，该方法适用于在室温至约100℃范围内较低温度下形成薄膜的弱热塑性基材。 提供金属氧化物纳米颗粒的制造方法以制造包括金属氧化物的电子部件。 构成：制造金属氧化物纳米颗粒的方法包括：制备包含碱性化学物质的醇溶液的步骤（S11） 制备金属氧化物前体溶液的步骤（S12） 使金属氧化物前体溶液与醇溶液的混合物反应形成金属氧化物纳米颗粒的步骤（S13）; 精炼金属氧化物纳米粒子的步骤（S14）。 醇溶液包含C1-C6醇，碱性化学物质选自LiOH，NaOH，KOH，NH4OH，它们的水合物及其混合物。

公开(公告)号：KR1020100010888A

公开(公告)日：2010-02-02

申请号：KR1020080113381

申请日：2008-11-14

Applicant: 한국전자통신연구원

Inventor： 정우석 ,  윤성민 ,  신재헌 ,  황치선

IPC: H01L29/786 ,  H01L21/20

CPC classification number: H01L21/02565 ,  H01L29/26 ,  H01L29/78693

Abstract: PURPOSE: A method for preparing a ZTO thin film, a thin film transistor using the same and method for preparing the thin film transistor are provided increase the uniformity of a device by using an amorphous ZTO thin film as a channel layer. CONSTITUTION: In a method for preparing a ZTO thin film, a thin film transistor using the same and method for preparing the thin film transistor. The ZTO thin film is processed under 150- 450°C. An atomic ratio of the zinc is 4:1 or 2:1 at a deposition temperature less than 300°C and it is 4:1 to 1:4 under at a deposition temperature of 300 - 450°C. A source electrode, a drain electrode, a channel layer, a gate isolation layer, and a gate electrode are formed on the substrate.

Abstract translation: 目的：制备ZTO薄膜的方法，使用该薄膜晶体管的薄膜晶体管和制备薄膜晶体管的方法通过使用无定形ZTO薄膜作为沟道层来提高器件的均匀性。 构成：在制备ZTO薄膜的方法中，使用该薄膜晶体管的薄膜晶体管和制备薄膜晶体管的方法。 ZTO薄膜在150-450℃下加工。 在300〜450℃的沉积温度下，在低于300℃的沉积温度下，锌的原子比为4:1或2:1，淀积温度为4:1至1:4。 在基板上形成源电极，漏电极，沟道层，栅极隔离层和栅电极。

公开(公告)号：KR100911371B1

公开(公告)日：2009-08-10

申请号：KR1020080022793

申请日：2008-03-12

Applicant: 한국전자통신연구원 ,  한국항공대학교산학협력단

Inventor： 신재헌 ,  전재홍 ,  황치선 ,  변춘원

IPC: G09G3/30 ,  G09G3/32 ,  G09G3/20 ,  H05B33/12

Abstract: A device for displaying an organic light emitting diode is provided to compensate for the deviation of the threshold voltage of transistor within the pixel structure without arranging the additional transistors within the pixel circuit. A device for displaying an organic light emitting diode comprises a display panel(210) and a driver circuit(220). The display panel has pixels. Each of the pixels has a transistor. The transistor is electrically and serially connected with the organic light-emitting diode. The transistor transmits the current to the organic light-emitting diode according to the data signal of the gate. The organic light-emitting diode is arranged between the first and the second power supply voltages with the transistor. The driver circuit drives the pixels by supplying the scan signal, the data signal, the first supply voltage and the second supply voltage to the display panel. The driver circuit has a threshold voltage variation calculation unit(221) and a power source voltage conversion unit(222). The threshold voltage variation calculation unit calculates the deviation between the threshold voltage and the standard threshold voltage of transistor.

Abstract translation: 提供了一种用于显示有机发光二极管的装置，以补偿像素结构内的晶体管的阈值电压的偏差，而不需要在像素电路内布置附加的晶体管。 用于显示有机发光二极管的装置包括显示面板（210）和驱动电路（220）。 显示面板具有像素。 每个像素都有一个晶体管。 晶体管与有机发光二极管电连接。 晶体管根据栅极的数据信号将电流传输到有机发光二极管。 有机发光二极管与晶体管配置在第一和第二电源电压之间。 驱动电路通过向显示面板提供扫描信号，数据信号，第一电源电压和第二电源电压来驱动像素。 驱动电路具有阈值电压变化计算部（221）和电源电压变换部（222）。 阈值电压变化计算单元计算阈值电压和晶体管的标准阈值电压之间的偏差。

公开(公告)号：KR1020090065268A

公开(公告)日：2009-06-22

申请号：KR1020070132751

申请日：2007-12-17

Applicant: 한국전자통신연구원

Inventor： 황치선 ,  변춘원 ,  박상희 ,  추혜용 ,  조경익

IPC: H04B1/38

CPC classification number: H04M1/0266 ,  H04M1/0216 ,  H04M2250/12 ,  H04M2250/16 ,  H04M2250/18 ,  H04M2250/22

Abstract: A foldable display device using a transparent display is provided to output various images to respective transparent displays, thereby improving user's convenience. A transparent display unit(220) comprises a transparent display(222). The transparent display unit enables switching into a transparent mode transmitting light or a display mode outputting image data. A control unit(210) sets the transparent display in the transparent mode or the display mode based on a signal received during an activation state of a device. A lower panel housing is connected to the transparent display unit to enable folding and unfolding.

Abstract translation: 提供使用透明显示器的可折叠显示装置，以将各种图像输出到相应的透明显示器，从而提高用户的便利性。 透明显示单元（220）包括透明显示器（222）。 透明显示单元能够切换到透明模式透射光或输出图像数据的显示模式。 控制单元（210）基于在设备的激活状态期间接收到的信号，将透明显示器设置为透明模式或显示模式。 下面板壳体连接到透明显示单元以使折叠和展开。

公开(公告)号：KR1020090065246A

公开(公告)日：2009-06-22

申请号：KR1020070132724

申请日：2007-12-17

Applicant: 한국전자통신연구원

Inventor： 신재헌 ,  황치선 ,  유민기 ,  정우석 ,  추혜용

IPC: G06F17/50

CPC classification number: G06F17/5036

Abstract: An apparatus and a method for modeling a source-drain current of a thin film transistor are provided to performing the modeling for an oxide thin film transistor and an organic thin film transistor. A modeling formula executing unit inputs various input values to a modeling formula when modeling variables are determined in modeling formula fitting unit(110). The modeling formula executing unit predicts an actual result according to the modeling formula. By applying the actually determined modeling variables to the modeling formula, a modeling formula applying unit(111) settles the modeling formula. In order to obtain an actual output value, the modeling formula executing unit input actual input data.

Abstract translation: 提供了用于对薄膜晶体管的源极 - 漏极电流进行建模的装置和方法，以对氧化物薄膜晶体管和有机薄膜晶体管进行建模。 建模公式执行单元在建模公式拟合单元（110）中确定建模变量时，将各种输入值输入到建模公式。 建模公式执行单元根据建模公式预测实际结果。 通过将实际确定的建模变量应用于建模公式，建模公式应用单元（111）确定建模公式。 为了获得实际的输出值，建模公式执行单元输入实际的输入数据。

公开(公告)号：KR1020090065182A

公开(公告)日：2009-06-22

申请号：KR1020070132649

申请日：2007-12-17

Applicant: 한국전자통신연구원

Inventor： 조두희 ,  변춘원 ,  신재헌 ,  박상희 ,  황치선 ,  추혜용

IPC: H05B33/02 ,  G06F3/03

CPC classification number: H01L27/323

Abstract: An organic light-emitting diode touch screen device and a manufacturing method thereof are provided to ensure a thin organic light-emitting diode touch screen device and to simplify a manufacturing process by using an infrared sensor. An organic light-emitting diode touch screen device comprises a display light-emitting unit and a touch sensing unit. The display light-emitting unit(200) includes a thin film transistor and an organic light-emitting diode controlled by the thin film transistor. The touch sensing unit(210) includes an infrared sensor and an infrared filter filtering and transmitting only infrared signals generated in the infrared sensor. The display light-emitting unit is arranged on the planar surface of the organic light-emitting diode touch screen device. The touch sensing unit is arranged between the display light-emitting units evenly.

Abstract translation: 提供一种有机发光二极管触摸屏装置及其制造方法，以确保薄的有机发光二极管触摸屏装置，并且通过使用红外传感器简化制造工艺。 有机发光二极管触摸屏装置包括显示发光单元和触摸感测单元。 显示发光单元（200）包括薄膜晶体管和由薄膜晶体管控制的有机发光二极管。 触摸感测单元（210）包括红外传感器和红外滤光器，其仅对红外传感器中产生的红外信号进行滤波和透射。 显示发光单元设置在有机发光二极管触摸屏装置的平面上。 触摸感测单元均匀地布置在显示发光单元之间。

公开(公告)号：KR1020080065517A

公开(公告)日：2008-07-14

申请号：KR1020070057097

申请日：2007-06-12

Applicant: 한국전자통신연구원

Inventor： 박상희 ,  황치선 ,  추혜용 ,  이정익

IPC: H01L21/203 ,  H01L21/205 ,  H01L29/786

CPC classification number: H01L21/02554 ,  H01L21/20 ,  H01L29/7869

Abstract: A method for fabricating a p-type ZnO semiconductor layer is provided to form a thin film transistor including a p-type ZnO semiconductor layer on a large-area glass or plastic substrate and eliminate the necessity of a high temperature post-treatment by forming a p-type ZnO semiconductor layer by an ALD(atomic layer deposition) method. A substrate is disposed in a chamber(S101). A zinc precursor and an oxygen precursor are injected into the chamber, and a ZnO thin film is formed on the substrate by a surface chemical reaction of the zinc precursor and the oxygen precursor while using an ALD method(S104). A zinc precursor and a nitrogen precursor are injected into the chamber, and a doping layer is formed on the ZnO thin film by using a surface chemical reaction of the zinc precursor and the nitrogen precursor. The zinc precursor can be diethyl zinc or dimethyl zinc. The oxygen precursor can be made of one of water, ozone, oxygen, water plasma or oxygen plasma.

Abstract translation: 提供一种制造p型ZnO半导体层的方法，以在大面积玻璃或塑料基板上形成包括p型ZnO半导体层的薄膜晶体管，并且通过形成 p型ZnO半导体层通过ALD（原子层沉积）法。 衬底设置在腔室中（S101）。 将锌前体和氧前体注入到室中，并且通过使用ALD方法的锌前体和氧前体的表面化学反应在基板上形成ZnO薄膜（S104）。 将锌前体和氮前体注入到室中，并且通过使用锌前体和氮前体的表面化学反应在ZnO薄膜上形成掺杂层。 锌前体可以是二乙基锌或二甲基锌。 氧气前体可以由水，臭氧，氧气，水等离子体或氧等离子体中的一种制成。

公开(公告)号：KR100793314B1

公开(公告)日：2008-01-11

申请号：KR1020060107193

申请日：2006-11-01

Applicant: 한국전자통신연구원

Inventor： 정승묵 ,  황치선 ,  이정익 ,  추혜용 ,  양용석 ,  박상희 ,  도이미

IPC: H05B33/26 ,  H05B33/24

CPC classification number: H01L51/5221 ,  H01L51/5218 ,  H01L51/5271 ,  H01L2251/5315 ,  H01L2251/558

Abstract: A multi-layer anode and a top emission organic light emitting diode including the multi-layer anode are provided to manufacture a conductive metal thin film as an anode electrode of the top emission organic light emitting diode. A top emission organic light emitting diode(10) includes a substrate(11), an anode(12), a hole injection layer(13a), a hole transporting layer(13b), a light emitting layer(14), an electron transporting layer(15a), an electron injection layer(15b), a cathode, a buffer layer(16), and a passivation layer(17). The anode is formed on the substrate. The hole transporting layer and the hole injection layer are formed on the anode. The cathode is formed on the electron injection layer. The buffer layer is formed on the cathode. The anode has a multi-layer structure. The anode includes a lower conduction layer(12a), a reflective conduction layer(12b), and an upper conductive layer(12c). The lower conductive layer is in direct contact with the substrate. The reflective layer is formed on the lower conduction layer. The upper conduction layer is formed on the reflective conduction layer.

Abstract translation: 提供包括多层阳极的多层阳极和顶部发射有机发光二极管，以制造作为顶部发射有机发光二极管的阳极的导电金属薄膜。 顶部发射有机发光二极管（10）包括基板（11），阳极（12），空穴注入层（13a），空穴传输层（13b），发光层（14），电子传输 层（15a），电子注入层（15b），阴极，缓冲层（16）和钝化层（17）。 阳极形成在基板上。 空穴传输层和空穴注入层形成在阳极上。 阴极形成在电子注入层上。 缓冲层形成在阴极上。 阳极具有多层结构。 阳极包括下导电层（12a），反射导电层（12b）和上导电层（12c）。 下导电层与衬底直接接触。 反射层形成在下导电层上。 上导电层形成在反射导电层上。