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    Polishing composition for nickel-phosphorous-coated memory disks
    158.
    发明授权
    Polishing composition for nickel-phosphorous-coated memory disks 有权
    镍 - 磷涂层记录盘抛光组合物

    公开(公告)号：US09039914B2

    公开(公告)日：2015-05-26

    申请号：US13478292

    申请日：2012-05-23

    Applicant: Selvaraj Palanisamy Chinnathambi ,  Haresh Siriwardane

    Inventor： Selvaraj Palanisamy Chinnathambi ,  Haresh Siriwardane

    IPC: B44C1/22 ,  C09K3/14 ,  H01L21/321 ,  H01L21/306

    CPC classification number: C09K3/1463 ,  B81C2201/0104 ,  H01L21/30625 ,  H01L21/3212

    Abstract: The invention provides a chemical-mechanical polishing composition containing wet-process silica, an oxidizing agent that oxidizes nickel-phosphorous, a chelating agent, polyvinyl alcohol, and water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

    Abstract translation: 本发明提供一种含有湿法二氧化硅，氧化镍磷的氧化剂，螯合剂，聚乙烯醇和水的化学机械抛光组合物。 本发明还提供了一种通过使基底与抛光垫和化学机械抛光组合物接触来对基底，特别是镍 - 磷基底进行化学机械抛光的方法，相对于基底移动抛光垫和抛光组合物， 并研磨基底的至少一部分以抛光基底。

    Method and Apparatus for Maintaining Parallelism of Layers and/or Achieving Desired Thicknesses of Layers During the Electrochemical Fabrication of Structures
    159.
    发明申请
    Method and Apparatus for Maintaining Parallelism of Layers and/or Achieving Desired Thicknesses of Layers During the Electrochemical Fabrication of Structures 有权
    在电化学制造结构期间维持层的平行化和/或实现层的期望厚度的方法和装置

    公开(公告)号：US20120181180A1

    公开(公告)日：2012-07-19

    申请号：US13356398

    申请日：2012-01-23

    Applicant: Uri Frodis ,  Adam L. Cohen ,  Michael S. Lockard

    Inventor： Uri Frodis ,  Adam L. Cohen ,  Michael S. Lockard

    IPC: C25D5/48 ,  C25D21/12 ,  C25D5/02

    CPC classification number: C25D5/48 ,  B33Y10/00 ,  B81C1/00492 ,  B81C99/0065 ,  B81C2201/0104 ,  B81C2201/0197 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76885 ,  Y10T156/1052

    Abstract: Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine.

    Abstract translation: 本发明的一些实施例提供了用于电化学制造多层结构（例如中尺度或微结构）的方法和装置，其具有改进的端点检测和用于在电化学制造过程中被平坦化的材料（例如层）的并行维护。 一些方法涉及在平坦化期间使用夹具，其确保材料的平面化平面平行于给定公差内的其它沉积平面。 一些方法涉及使用端点检测夹具，其相对于第一沉积层或相对于在制造过程期间形成的一些其它层，相对于衬底的初始表面确保沉积材料的精确高度。 在一些实施例中，平面化可以通过研磨发生，而其他实施例可以使用金刚石切片机。

    Electrochemical Fabrication Methods for Producing Multilayer Structures Including the use of Diamond Machining in the Planarization of Deposits of Material
    160.
    发明申请
    Electrochemical Fabrication Methods for Producing Multilayer Structures Including the use of Diamond Machining in the Planarization of Deposits of Material 审中-公开
    用于生产多层结构的电化学制造方法包括在材料沉积物平面化中使用金刚石加工

    公开(公告)号：US20120114861A1

    公开(公告)日：2012-05-10

    申请号：US13253856

    申请日：2011-10-05

    Applicant: Adam L. Cohen ,  Uri Frodis ,  Michael S. Lockard ,  Ananda H. Kumar ,  Gang Zhang ,  Dennis R. Smalley

    Inventor： Adam L. Cohen ,  Uri Frodis ,  Michael S. Lockard ,  Ananda H. Kumar ,  Gang Zhang ,  Dennis R. Smalley

    IPC: B05D3/12 ,  B05D1/36 ,  C25D5/48

    CPC classification number: C25D1/003 ,  B81C1/00492 ,  B81C99/0065 ,  B81C2201/0104 ,  B81C2201/0197 ,  C25D5/02 ,  C25D5/022 ,  C25D5/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76885

    Abstract: Electrochemical fabrication methods for forming single and multilayer mesoscale and microscale structures include the use of diamond machining (e.g. fly cutting or turning) to planarize layers. Some embodiments focus on systems of sacrificial and structural materials which can be diamond machined with minimal tool wear (e.g. Ni—P and Cu, Au and Cu, Cu and Sn, Au and Cu, Au and Sn, and Au and Sn—Pb). Some embodiments provide for reducing tool wear when using difficult-to-machine materials by (1) depositing difficult to machine materials selectively and potentially with little excess plating thickness and/or (2) pre-machining depositions to within a small increment of desired surface level (e.g. using lapping) and then using diamond fly cutting to complete the process, and/or (3) forming structures or portions of structures from thin walled regions of hard-to-machine material as opposed to wide solid regions of structural material.

    Abstract translation: 用于形成单层和多层中尺度和微结构结构的电化学制造方法包括使用金刚石加工（例如飞切或车削）来平坦化层。 一些实施例侧重于牺牲和结构材料的系统，其可以以最小的工具磨损（例如Ni-P和Cu，Au和Cu，Cu和Sn，Au和Cu，Au和Sn以及Au和Sn-Pb）进行金刚石加工， 。 一些实施例提供了通过（1）选择性地沉积难以加工的材料并且潜在地以很少的镀层厚度沉积和/​​或（2）预加工沉积到期望表面的小增量内，以便在使用难加工材料时减少刀具磨损 （例如使用研磨），然后使用金刚石飞切切割来完成该过程，和/或（3）从硬质材料的薄壁区域形成与结构材料的宽固体区域相反的结构或部分结构。

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