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公开(公告)号：US5584740A
公开(公告)日：1996-12-17
申请号：US321642
申请日：1994-10-11
Applicant: David S. Y. Hsu , Henry F. Gray
Inventor： David S. Y. Hsu , Henry F. Gray
CPC classification number: H01J9/025 , H01J1/3042 , H01J2201/30423 , H01J2201/319
Abstract: A thin-film edge field emitter device includes a substrate having a first portion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second portion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second portion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.
Abstract translation: 薄膜边缘场发射器装置包括具有第一部分并且具有从第一部分延伸的突起的基底，突起限定至少一个侧壁，侧壁构成第二部分。 发射极层设置在包括第二部分的衬底上，发射极层选自半导体和导体，并且是包括延伸超过第二部分并限定暴露的发射极边缘的部分的薄膜。 一对支撑层设置在发射极层的相对侧上，该对支撑层各自选自由半导体和导体组成的组，并且每个具有比发射极层更高的功函数。
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公开(公告)号：JP2018010869A
公开(公告)日：2018-01-18
申请号：JP2017130850
申请日：2017-07-04
Applicant: タレス
Inventor： ジャン−ポール・マズリエ , リュシ・サボー
IPC: H01J35/06 , H01J23/06 , H01J37/073 , B82Y30/00 , H01J1/304
CPC classification number: H01J35/065 , H01J1/15 , H01J1/312 , H01J21/105 , H01J23/04 , H01J2201/30423 , H01J2201/30434 , H01J2235/068
Abstract: 【課題】ナノチューブまたはナノワイヤに基づく平面陰極を有する真空電子管を提供する。 【解決手段】真空槽E内に配置された少なくとも1つの電子放射陰極Cと少なくとも1つの陽極Aであって、陰極は導電材料を含む基板Sbを含む平面構造を有する、陰極と陽極と、基板から電気的に絶縁された複数のナノチューブまたはナノワイヤ素子であって、ナノチューブまたはナノワイヤ素子の長手軸は基板の面とほぼ平行である、素子と、ナノワイヤまたはナノチューブ素子へ第1の電位を印加することができるように少なくとも1つのナノチューブまたはナノワイヤ素子へ電気的に結合された少なくとも1つの第1のコネクタCE1と、を含む真空電子管である。 【選択図】図7
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公开(公告)号：JP2012089258A
公开(公告)日：2012-05-10
申请号：JP2010232626
申请日：2010-10-15
Inventor： OZAKI EIJI , MOTOI YASUKO , FUJIWARA RYOJI , KITAO AKIKO
CPC classification number: H01J29/467 , H01J1/3046 , H01J31/127 , H01J2201/30423 , H01J2329/4608
Abstract: PROBLEM TO BE SOLVED: To provide an electron emission element having an excellent electron emission characteristic.SOLUTION: An electron emission element includes a cathode and a gate irradiated with electrons emitted via an electric field from the cathode, and the gate includes at least a layer including molybdenum and oxygen at a portion irradiated with the electrons emitted via the electric field from the cathode, and the layer has respective peaks in ranges of 397 eV to 401 eV, 414 eV to 418 eV, 534 eV to 538 eV, and 540 eV to 547 eV, which are observed in the spectrum measurement by an electron energy loss spectroscopic process using a transmission electron microscope.
Abstract translation: 解决的问题：提供具有优异的电子发射特性的电子发射元件。 解决方案：电子发射元件包括阴极和经由来自阴极的电场发射的电子的栅极，并且栅极包括至少一层包括钼和氧的层，所述层在经由电子发射的电子被照射的部分 并且该层具有在397eV至401eV，414eV至418eV，534eV至538eV和540eV至547eV的范围内的各自的峰值，其在通过电子能量的光谱测量中观察到 使用透射电子显微镜的损耗光谱法。 版权所有（C）2012，JPO＆INPIT
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154.发明专利Method of manufacturing electron emission element, electron beam device and image display device 审中-公开制造电子发射元件，电子束装置和图像显示装置的方法
公开(公告)号：JP2011228000A
公开(公告)日：2011-11-10
申请号：JP2010093791
申请日：2010-04-15
Inventor： HIROKI TAMAYO
CPC classification number: H01J1/3046 , H01J3/022 , H01J9/025 , H01J2201/30423 , H01J2329/0423
Abstract: PROBLEM TO BE SOLVED: To suppress occurrence of leak current between a gate and a cathode across which a voltage for driving an electron source is applied.SOLUTION: In a method of manufacturing an electron emission element containing an insulation member having a recess portion on the surface thereof, a gate electrode disposed on the surface of the insulation member so as to face the recess portion, and a cathode having a protrusion which is disposed at the edge of the recess portion and projects to the gate electrode, a step of providing the recess portion and a step of providing the cathode after the protrusion projecting to the gate electrode at the edge of the recess portion are successively executed in this order.
Abstract translation: 要解决的问题：抑制施加用于驱动电子源的电压的栅极和阴极之间的漏电流的发生。 解决方案：在制造包含其表面上具有凹部的绝缘构件的电子发射元件的方法中，设置在绝缘构件的表面上以与凹部对置的栅极，以及具有 设置在凹部的边缘并突出到栅电极的突起，设置凹部的步骤和在凹部的边缘处突出到栅电极的突起之后提供阴极的步骤相继 按此顺序执行。 版权所有（C）2012，JPO＆INPIT
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155.发明专利
公开(公告)号：JP4637233B2
公开(公告)日：2011-02-23
申请号：JP2008324465
申请日：2008-12-19
Applicant: キヤノン株式会社
IPC: H01J9/02
CPC classification number: H01J31/127 , H01J1/3046 , H01J29/04 , H01J2201/30423 , H01J2329/0423
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Patent Agency Ranking156.发明专利Method of manufacturing electron-emitting device and method of manufacturing image display apparatus 审中-公开制造电子发射装置的方法和制造图像显示装置的方法
公开(公告)号：JP2010146914A
公开(公告)日：2010-07-01
申请号：JP2008324464
申请日：2008-12-19
Inventor： NISHIMURA MASARU , KOBAYASHI TAMAKI , MIYAMOTO YUSUKE , MORIGUCHI TAKUTO , TAKEUCHI HIDEJI , SATO TAKAHIRO
IPC: H01J9/02
CPC classification number: H01J1/3046 , H01J9/025 , H01J31/127 , H01J2201/30423 , H01J2329/0423
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing electron-emitting element which has high electron-emitting efficiency and can restrain generation of leakage current, and has high reliability. SOLUTION: Etching treatment of a conductive film is performed in a film-thickness direction on an insulating layer, having an upper face and a side face connected with the upper face via a corner section, after the conductive film extending from the side face to the upper face is formed, above the side face and the upper face, with equivalent film quality. COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 解决的问题：提供一种具有高电子发射效率并且可以抑制泄漏电流产生的电子发射元件的制造方法，并且具有高可靠性。 解决方案：在导电膜从侧面延伸之后，在绝缘层上的膜厚度方向上进行导电膜的蚀刻处理，该绝缘层具有上表面和侧面经由拐角部分与上表面连接的侧面 面对上表面形成，在侧面和上表面上方，具有相当的膜质量。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP4743933B2
公开(公告)日：2011-08-10
申请号：JP2000058491
申请日：2000-03-03
Applicant: スミスズ グループ ピーエルシーSmiths Group Plc , ワン ナン ワンWang Wang Nang
Inventor： アンソニー フォックス ニール , ナン ワン ワン
CPC classification number: H01J1/308 , H01J1/316 , H01J9/022 , H01J2201/30423 , H01J2329/00 , Y10S977/939
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158.发明专利Electron-emitting element and manufacturing method for image display using the same 审中-公开用于图像显示的电子发射元件和制造方法
公开(公告)号：JP2010146917A
公开(公告)日：2010-07-01
申请号：JP2008324467
申请日：2008-12-19
Inventor： TOMII HIROSHI , SHIMAZU AKIRA , KOBAYASHI TAMAKI , MIYAMOTO YUSUKE , KITAMURA SHIN , SATO TAKAHIRO
IPC: H01J9/02
CPC classification number: H01J1/3046 , H01J9/025 , H01J31/127 , H01J2201/30423 , H01J2329/0423
Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method for an electron-emitting element which has high electron-emitting efficiency and is highly reliable. SOLUTION: The manufacturing method for an electron emitting element includes a first process of preparing an electrode above an upper face of an insulating layer having the upper face and a side face connected with the upper face; a second process of preparing a first conductive film from above the upper face over to above the side face so as to separate from the electrode; a third process of preparing a second conductive film on the first conductive film from above the upper face over to above the side face; and a fourth process of etching the second conductive film. COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 要解决的问题：提供一种具有高电子发射效率和高可靠性的电子发射元件的制造方法。 解决方案：电子发射元件的制造方法包括在具有上表面的绝缘层的上表面和与上表面连接的侧面上制备电极的第一工序; 从所述上表面上方超过所述侧面制备第一导电膜以便与所述电极分离的第二工序; 从所述上表面上方到所述侧面上方在所述第一导电膜上制备第二导电膜的第三工序; 以及蚀刻第二导电膜的第四工序。 版权所有（C）2010，JPO＆INPIT
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159.发明专利Method of manufacturing electron emitting element, and method of manufacturing image display device using the same 有权制造电子发射元件的方法和使用该方法制造图像显示装置的方法
公开(公告)号：JP2010146915A
公开(公告)日：2010-07-01
申请号：JP2008324465
申请日：2008-12-19
Inventor： IWATA KENICHI , KOBAYASHI TAMAKI , MIYAMOTO YUSUKE , MORIGUCHI TAKUTO , TAKEUCHI HIDEJI , KITAMURA SHIN
IPC: H01J9/02
CPC classification number: H01J31/127 , H01J1/3046 , H01J29/04 , H01J2201/30423 , H01J2329/0423
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a reliable electron emitting element which has high electron emission efficiency and suppresses generation of a leak current. SOLUTION: An insulating layer includes an upper surface and a side surface connected to the upper surface via a corner part. A conductive film, which extends from the side surface to the upper surface and covers at least a part of the corner part, is formed on the insulating layer. Etching processing is carried out by utilizing a difference of film density formed on the conductive film. COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 要解决的问题：提供一种制造具有高电子发射效率并抑制泄漏电流产生的可靠电子发射元件的方法。 解决方案：绝缘层包括上表面和经由角部连接到上表面的侧表面。 在绝缘层上形成从侧面延伸到上表面并覆盖角部的至少一部分的导电膜。 通过利用形成在导电膜上的膜密度的差异进行蚀刻处理。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JP4206858B2
公开(公告)日：2009-01-14
申请号：JP2003285874
申请日：2003-08-04
Applicant: 双葉電子工業株式会社
CPC classification number: H01J1/3046 , H01J29/04 , H01J31/127 , H01J2201/30423
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