Abstract:
A thin-film edge field emitter device includes a substrate having a first portion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second portion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second portion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.
Abstract:
PROBLEM TO BE SOLVED: To provide an electron emission element having an excellent electron emission characteristic.SOLUTION: An electron emission element includes a cathode and a gate irradiated with electrons emitted via an electric field from the cathode, and the gate includes at least a layer including molybdenum and oxygen at a portion irradiated with the electrons emitted via the electric field from the cathode, and the layer has respective peaks in ranges of 397 eV to 401 eV, 414 eV to 418 eV, 534 eV to 538 eV, and 540 eV to 547 eV, which are observed in the spectrum measurement by an electron energy loss spectroscopic process using a transmission electron microscope.
Abstract:
PROBLEM TO BE SOLVED: To suppress occurrence of leak current between a gate and a cathode across which a voltage for driving an electron source is applied.SOLUTION: In a method of manufacturing an electron emission element containing an insulation member having a recess portion on the surface thereof, a gate electrode disposed on the surface of the insulation member so as to face the recess portion, and a cathode having a protrusion which is disposed at the edge of the recess portion and projects to the gate electrode, a step of providing the recess portion and a step of providing the cathode after the protrusion projecting to the gate electrode at the edge of the recess portion are successively executed in this order.
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing electron-emitting element which has high electron-emitting efficiency and can restrain generation of leakage current, and has high reliability. SOLUTION: Etching treatment of a conductive film is performed in a film-thickness direction on an insulating layer, having an upper face and a side face connected with the upper face via a corner section, after the conductive film extending from the side face to the upper face is formed, above the side face and the upper face, with equivalent film quality. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method for an electron-emitting element which has high electron-emitting efficiency and is highly reliable. SOLUTION: The manufacturing method for an electron emitting element includes a first process of preparing an electrode above an upper face of an insulating layer having the upper face and a side face connected with the upper face; a second process of preparing a first conductive film from above the upper face over to above the side face so as to separate from the electrode; a third process of preparing a second conductive film on the first conductive film from above the upper face over to above the side face; and a fourth process of etching the second conductive film. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a reliable electron emitting element which has high electron emission efficiency and suppresses generation of a leak current. SOLUTION: An insulating layer includes an upper surface and a side surface connected to the upper surface via a corner part. A conductive film, which extends from the side surface to the upper surface and covers at least a part of the corner part, is formed on the insulating layer. Etching processing is carried out by utilizing a difference of film density formed on the conductive film. COPYRIGHT: (C)2010,JPO&INPIT