公开(公告)号：US20110089397A1

公开(公告)日：2011-04-21

申请号：US12736270

申请日：2009-03-24

Applicant: Toru Ujihara ,  Xiuguang Jin ,  Yoshikazu Takeda ,  Tsutomu Nakanishi ,  Naoto Yamamoto ,  Takashi Saka ,  Toshihiro Kato

Inventor： Toru Ujihara ,  Xiuguang Jin ,  Yoshikazu Takeda ,  Tsutomu Nakanishi ,  Naoto Yamamoto ,  Takashi Saka ,  Toshihiro Kato

IPC: H01L29/12

CPC classification number: G21K1/16 ,  H01J1/34 ,  H01J3/021 ,  H01J37/06 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557 ,  H01J2237/26

Abstract: To provide implement a spin-polarized electron generating device having high spin polarization and high external quantum efficiency while allowing a certain degree of freedom in selecting materials of a substrate, a buffer layer, and a strained superlattice layer.In a spin-polarized electron generating device having a substrate, a buffer layer, and a strained superlattice layer formed on the buffer layer, an intermediate layer formed of a crystal having a lattice constant greater than that of a crystal used to form the buffer layer intervenes between the substrate and the buffer layer. With this arrangement, tensile strain causes cracks to be formed in the buffer layer in a direction perpendicular to the substrate, whereby the buffer layer has mosaic-like appearance. As a result, glide dislocations in an oblique direction do not propagate to the strained superlattice layer to be grown on the buffer layer, thereby improving crystallinity of the strained superlattice layer. Accordingly, spin polarization of excited electrons and external quantum efficiency of polarized electrons improve.

Abstract translation: 为了提供具有高自旋极化和高外部量子效率的自旋极化电子发生器件，同时在选择衬底，缓冲层和应变超晶格层的材料方面具有一定的自由度。 在具有形成在缓冲层上的衬底，缓冲层和应变超晶格层的自旋极化电子发生器件中，由晶格常数大于用于形成缓冲层的晶体的晶格常数的晶体形成的中间层 介于衬底和缓冲层之间。 通过这种布置，拉伸应变使得缓冲层中的垂直于基板的方向形成裂纹，由此缓冲层具有马赛克状外观。 结果，倾斜方向的滑移位错不会传播到在缓冲层上生长的应变超晶格层，从而提高应变超晶格层的结晶度。 因此，激发电子的自旋极化和极化电子的外部量子效率提高。

公开(公告)号：US20070096648A1

公开(公告)日：2007-05-03

申请号：US11585936

申请日：2006-10-25

Applicant: Kazutoshi Nakajima ,  Minoru Niigaki ,  Tomoko Mochizuki ,  Toru Hirohata

Inventor： Kazutoshi Nakajima ,  Minoru Niigaki ,  Tomoko Mochizuki ,  Toru Hirohata

IPC: H01J40/06

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A semiconductor photocathode 1 includes: a transparent substrate 11; a first electrode 13, formed on the transparent substrate 11 and enabling passage of light that has been transmitted through the transparent substrate 11; a window layer 14, formed on the first electrode 13 and formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer 15, formed on the window layer 14, formed of a semiconductor material that is lattice matched to the window layer 14, is narrower in energy band gap than the window layer 14, and in which photoelectrons are excited in response to the incidence of light; an electron emission layer 16, formed on the light absorbing layer 15, formed of a semiconductor material that is lattice matched to the light absorbing layer 15, and emitting the photoelectrons excited in the light absorbing layer 15 to the exterior from a surface; and a second electrode 18, formed on the electron emission layer.

Abstract translation: 半导体光电阴极1包括：透明基板11; 第一电极13，其形成在透明基板11上，并能透过透明基板11的光通过; 窗口层14，其形成在第一电极13上并且由不小于10nm且不大于200nm的厚度的半导体材料形成; 形成在与窗口层14格子匹配的半导体材料的窗口层14上的光吸收层15的能带隙比窗口层14更窄，并且其中光电子响应于 光的发生; 由与光吸收层15晶格匹配的半导体材料形成的光吸收层15上形成的电子发射层16，并且将从光吸收层15激发的光电子从表面发射到外部; 以及形成在电子发射层上的第二电极18。

公开(公告)号：US07129464B2

公开(公告)日：2006-10-31

申请号：US10969379

申请日：2004-10-19

Applicant: Michael P. Buchin

Inventor： Michael P. Buchin

IPC: G01N21/64

CPC classification number: H01J31/507 ,  H01J2201/3423 ,  H01J2231/50073 ,  H01J2231/5016

Abstract: A low-photon flux image-intensified electronic camera comprises a gallium arsenide phosphide (GaAsP) photocathode in a high vacuum tube assembly behind a hermetic front seal to receive image photons. Such is cooled by a Peltier device to −20° C. to 0° C., and followed by a dual microchannel plate. The microchannels in each plate are oppositely longitudinally tilted away from the concentric to restrict positive ions that would otherwise contribute to the generation high brightness “scintillation” noise events at the output of the image. A phosphor-coated output fiberoptic conducts intensified light to an image sensor device. This too is chilled and produces a camera signal output. A high voltage power supply connected to the dual microchannel plate provides for gain control and photocathode gating and shuttering. A fiberoptic taper is used at the output of the image intensifier vacuum tube as a minifier between the internal output fiberoptic and the image sensor.

公开(公告)号：US06563264B2

公开(公告)日：2003-05-13

申请号：US09842831

申请日：2001-04-27

Applicant: Minoru Niigaki ,  Toru Hirohata ,  Tomoko Mochizuki ,  Hirofumi Kan

Inventor： Minoru Niigaki ,  Toru Hirohata ,  Tomoko Mochizuki ,  Hirofumi Kan

IPC: H01J4018

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: This photocathode comprises: InP substrate 1; InAsx2P1−x2(0 x1>0.53) light-absorbing layer 3; InAsx3P1−x3 (0

公开(公告)号：US20020125841A1

公开(公告)日：2002-09-12

申请号：US09992694

申请日：2001-11-20

Inventor： Frederick M. Mako ,  Amnon Fisher

IPC: G09G001/04

CPC classification number: H01J3/023 ,  H01J23/06 ,  H01J2201/3423

Abstract: The present invention pertains to an electron gun that generates an electron flow and the application of this gun to produce rf energy or for injectors. The electron gun comprises an electrostatic cavity having a first stage with emitting faces and multiple stages with emitting sections. The gun is also comprised of a mechanism for producing an electrostatic force which encompasses the emitting faces and the multiple emitting sections so electrons are directed from the emitting faces toward the emitting sections to contact the emitting sections and generate additional electrons and to further contact other emitting sections to generate additional electrons and so on then finally to escape the end of the cavity. The emitting sections preferably provide the cavity with an accelerating force for electrons inside the cavity. The multiple sections preferably include thin forward emitting surfaces. The forward emitting surfaces can be of an annular shape, or of a circular shape, or of a rhombohedron shape. The mechanism preferably includes a mechanism for producing an electrostatic electric field that provides the force and which has a radial component that prevents the electrons from straying out of the region between the first stage with emitting faces and the multiple emitting sections. Additionally, the gun includes a mechanism for producing a magnetic field to contain the electrons anywhere from the first stage with emitting faces or any emitting section and to the end of the cavity. The present invention pertains to a method for producing a flow of electrons. The method comprises the steps of moving at least a first electron in a first direction at one location. Next there is the step of striking a first area with the first electron. Then there is the step of producing additional electrons at the first area due to the first electron. Next there is the step of moving electrons from the first area to a second area and transmitting electrons through the second area and creating more electrons due to electrons from the first area striking the second area. These newly created electrons from the second area move in the first direction then strike the third area, fourth area, etc. Each area creates even more electrons in a repeating manner by moving in the first direction to multiple areas. This process is also repeated at different locations. The mechanism preferably includes a mechanism for accelerating the electrons inside the electrostatic cavity to allow the electron multiplication to continue. The mechanism preferably includes a control grid for bunching the electron flow. The present invention pertains to an electron gun. The electron gun comprises an electrostatic cavity having a first stage with electron emitting faces and multiple stages with electron emitting sections. The electron gun also comprises a mechanism for producing an electrostatic force which encompasses the electron emitting faces and the multiple electron emitting sections so electrons from the electron emitting faces and sections are directed from the emitting faces toward the emitting sections to contact the emitting sections and generate additional electrons on the opposite sides of the emitting sections and to further contact other emitting sections. The present invention pertains to a method for producing electrons. The method comprises the steps of moving at least a first electron in a first direction from a first location. Then, there is the step of striking a first area with the first electron. Next, there is the step of producing additional electrons at the first area due to the first electrons on the opposite side of the first area which was struck by the first electron. Next, there is the step of moving electrons from the first area to a second area. Then, there is the step of transmitting electrons to the second area and creating more electrons due to electrons from the first area striking the second area.

公开(公告)号：US20020011787A1

公开(公告)日：2002-01-31

申请号：US09842831

申请日：2001-04-27

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Minoru Niigaki ,  Toru Hirohata ,  Tomoko Mochizuki ,  Hirofumi Kan

IPC: H01J031/50

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: This photocathode comprises: InP substrate 1; InAsx2P1nullx2(0 x1>0.53) light-absorbing layer 3; InAsx3P1nullx3 (0

Abstract translation: 该光电阴极包括：InP衬底1; InAsx2P1-x2（0 x1> 0.53）光吸收层3; InAsx3P1-x3（0

公开(公告)号：US5977705A

公开(公告)日：1999-11-02

申请号：US639561

申请日：1996-04-29

Applicant: Timothy W. Sinor ,  Joseph P. Estrera ,  Keith T. Passmore

Inventor： Timothy W. Sinor ,  Joseph P. Estrera ,  Keith T. Passmore

IPC: H01J1/34 ,  H01J9/12 ,  H01J29/38 ,  H01J40/06

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J29/38 ,  H01J2201/3421 ,  H01J2201/3423

Abstract: A novel photocathode and image intensifier tube include an active layer comprised substantially of amorphic diamond-like carbon, diamond, or a combination of both. The photocathode has a face plate coupled to an active layer. The active layer is operable to emit electrons in response to photons striking the face plate.

公开(公告)号：US5962843A

公开(公告)日：1999-10-05

申请号：US895917

申请日：1997-07-17

Applicant: Timothy Wayne Sinor ,  Joseph Paul Estrera

Inventor： Timothy Wayne Sinor ,  Joseph Paul Estrera

IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01J40/14

CPC classification number: H01J31/506 ,  H01J1/34 ,  H01J29/38 ,  H01J2201/3423

Abstract: A night vision device includes an image intensifier tube, which includes a photocathode responsive both to white light and to infrared light to release photoelectrons. The photocathode is particularly sensitive to infrared light at the 980 nm wavelength, and has desirable spectral response characteristics.

Abstract translation: 夜视装置包括图像增强管，其包括响应白光和红外光以释放光电子的光电阴极。 光电阴极对980nm波长的红外光特别敏感，具有期望的光谱响应特性。

公开(公告)号：US5898269A

公开(公告)日：1999-04-27

申请号：US863493

申请日：1997-05-27

Applicant: Aaron W. Baum ,  James Edward Schneider, Jr.

Inventor： Aaron W. Baum ,  James Edward Schneider, Jr.

IPC: H01J37/06 ,  G03F7/20 ,  H01J1/34 ,  H01J3/02 ,  H01J7/18 ,  H01J27/04 ,  H01J37/073 ,  H01J40/06

CPC classification number: G03F7/70375 ,  H01J27/04 ,  H01J3/021 ,  H01J37/073 ,  H01J2201/3423 ,  H01J2237/045 ,  H01J2237/06333 ,  H01J2237/28 ,  H01J2237/31754

Abstract: An electron beam source includes a cathode having an electron emission surface including an active area for emission of electrons and a cathode shield assembly including a conductive shield disposed in proximity to the electron emission surface of the cathode. The shield has an opening aligned with the active area. The electron beam source further includes a device for stimulating emission of electrons from the active area of the cathode, electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the cathode at high vacuum. The cathode may be a negative electron affinity photocathode formed on a light-transmissive substrate. The shield protects non-emitting areas of the emission surface from contamination and inhibits cathode materials from contaminating components of the electron beam source. The cathode may be moved relative to the opening in the shield so as to align an new active area with the opening. Getter materials and sources of activation material may be incorporated into the shield assembly.

Abstract translation: 电子束源包括具有电子发射表面的阴极，该电子发射表面包括用于发射电子的有源区和包括设置在阴极的电子发射表面附近的导电屏蔽的阴极屏蔽组件。 屏蔽罩具有与活动区域对齐的开口。 电子束源还包括用于刺激来自阴极的有源区域的电子的发射的装置，用于将电子形成电子束的电子光学器件和用于将阴极保持在高真空的真空外壳。 阴极可以是形成在透光基板上的负电子亲和光电阴极。 屏蔽保护发射表面的不发射区域免受污染，并阻止阴极材料污染电子束源的部件。 阴极可以相对于屏蔽件中的开口移动，以将新的有效区域与开口对准。 吸气材料和活化材料源可以并入屏蔽组件中。

公开(公告)号：US5723871A

公开(公告)日：1998-03-03

申请号：US214319

申请日：1994-03-17

Applicant: Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

Inventor： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

IPC: H01J1/34 ,  H01J3/02 ,  H01L29/201 ,  H01L29/161

CPC classification number: H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.