저항변화기록소자에 이용되는 스위칭 다이오드 및 이를이용한 저항변화기록소자와 저항변화 랜덤 액세스 메모리
    162.
    发明公开
    저항변화기록소자에 이용되는 스위칭 다이오드 및 이를이용한 저항변화기록소자와 저항변화 랜덤 액세스 메모리 有权
    用于电阻开关元件和电阻开关元件的开关二极管和电阻随机访问存储器

    公开(公告)号:KR1020090098443A

    公开(公告)日:2009-09-17

    申请号:KR1020080023843

    申请日:2008-03-14

    Inventor: 황철성

    CPC classification number: H01L27/2409 G11C13/0004 H01L27/0766 H01L29/45

    Abstract: A switching diode for a resistance recoding element, and a resistance recoding element and a resistance random access memory using the same are provided to read the information recorded in the resistance recording element with low power specifically by making current ratio high in low read voltage. A semiconductor layer(320) is made of semiconductor material. A schottky junction layer(310) is formed to be contacted with one side of the semiconductor layer and performs the schottky junction with the semiconductor layer. An ohmic junction layer(330) is formed to be contacted with other side of the semiconductor layer and performs ohmic junction with the semiconductor layer. The semiconductor layer is made of a transition metal oxide of n-type. The transition metal oxide of n-type is titanium oxide(TiO2). In the thickness of the ohmic junction layer is 5 ~ 500nm.

    Abstract translation: 提供一种用于电阻记录元件的开关二极管,以及电阻记录元件和使用该开关二极管的电阻随机存取存储器,其特征在于通过使电流比高于低读取电压来读取记录在具有低功率的电阻记录元件中的信息。 半导体层(320)由半导体材料制成。 肖特基结层(310)形成为与半导体层的一侧接触,并与半导体层进行肖特基结。 形成欧姆结层(330)以与半导体层的另一侧接触并与半导体层进行欧姆结。 半导体层由n型过渡金属氧化物制成。 n型的过渡金属氧化物是二氧化钛(TiO 2)。 在欧姆接层的厚度为5〜500nm。

    복수 개의 도파관을 사용하여 분산을 갖는 메타물질을구현하는 기판
    163.
    发明公开
    복수 개의 도파관을 사용하여 분산을 갖는 메타물질을구현하는 기판 无效
    使用多种波长的分散式元件的基础

    公开(公告)号:KR1020090097399A

    公开(公告)日:2009-09-16

    申请号:KR1020080022511

    申请日:2008-03-11

    CPC classification number: H01P1/201 H01P3/122 H01P3/13

    Abstract: A substrate is provided to perform a dispersive meta material by using diffraction between electromagnetic waves which pass a plurality of waveguides. A substrate(1) includes a first surface(10), a second surface(20), and a plurality of waveguides(30). An electromagnetic wave is incident on the first surface. The electromagnetic wave is emitted from the second surface. A plurality of waveguides is arranged according to a first axial direction and a second axial direction. The first axial direction is parallel to a polarizing direction of the electromagnetic wave. The second axial direction is vertical to the first axial direction. A plurality of waveguides generates diffraction of the electromagnetic wave by delivering the electromagnetic wave from the first surface to the second surface. A plurality of waveguides generates Fabry-Perot resonance of the electromagnetic wave.

    Abstract translation: 提供衬底以通过使通过多个波导的电磁波之间的衍射来执行分散的间位材料。 基板(1)包括第一表面(10),第二表面(20)和多个波导(30)。 电磁波入射在第一表面上。 电磁波从第二表面发射。 多个波导根据第一轴向和第二轴向布置。 第一轴向平行于电磁波的偏振方向。 第二轴向垂直于第一轴向。 多个波导通过将电磁波从第一表面传递到第二表面而产生电磁波的衍射。 多个波导产生电磁波的法布里 - 珀罗共振。

    멀티 플러그를 이용한 멀티 비트 OTP 메모리 소자와 그제조 및 동작방법
    164.
    发明公开
    멀티 플러그를 이용한 멀티 비트 OTP 메모리 소자와 그제조 및 동작방법 有权
    使用多个插头的多位OTP(一次可编程)存储器件及其制造和操作方法

    公开(公告)号:KR1020090095096A

    公开(公告)日:2009-09-09

    申请号:KR1020080020200

    申请日:2008-03-04

    CPC classification number: H01L27/101 G11C11/5692

    Abstract: An OTP(One Time Programmable) memory device using multi plug, and a manufacturing and operating method thereof are provided to store data more than 2 bit by connecting four or more plugs between a link and a cathode. A link(44) is connected to an anode(42). A first connection unit connects the link and a cathode(40). The link and anode are included in a position lower than the cathode. The link and the anode are included in a position higher than the cathode. The cathode, the anode, the link, and the first connection unit are included in the same plane. The first connection unit includes at least one plug.

    Abstract translation: 提供使用多插头的OTP(一次可编程)存储器件及其制造和操作方法,以通过在链路和阴极之间连接四个或更多个插头来存储超过2位的数据。 连接件(44)连接到阳极(42)。 第一连接单元连接连杆和阴极(40)。 链路和阳极被包括在比阴极低的位置。 链路和阳极被包括在比阴极高的位置。 阴极,阳极,连接件和第一连接单元包括在同一平面内。 第一连接单元包括至少一个插头。

    알파-사이클로덱스트린 관형집합체의 제조방법 및알파-사이클로덱스트린 관형집합체 번들 응집체
    165.
    发明授权
    알파-사이클로덱스트린 관형집합체의 제조방법 및알파-사이클로덱스트린 관형집합체 번들 응집체 失效
    制备á-环糊精管组件和¥á-环糊精管组装束聚集结构的方法

    公开(公告)号:KR100916051B1

    公开(公告)日:2009-09-08

    申请号:KR1020070097860

    申请日:2007-09-28

    Abstract: 본 발명은 알파-사이클로덱스트린 관형집합체의 제조방법 및 이로부터 제조된 알파-사이클로덱스트린 관형집합체로 형성되는 알파-사이클로덱스트린 관형집합체 번들 응집체에 관한 것이다. 본 발명의 알파-사이클로덱스트린 관형집합체 제조방법은, (S1) 알파-사이클로덱스트린을 테트라히드로푸란에 첨가하는 단계; (S2) 상기 알파-사이클로덱스트린이 첨가된 테트라히드로푸란을 초음파 처리하여 알파-사이클로덱스트린 분산액을 얻는 단계; 및 (S3) 상기 알파-사이클로덱스트린 분산액을 여과하고 건조시켜 알파-사이클로덱스트린 관형집합체를 얻는 단계를 포함한다. 본 발명의 제조방법은 매우 간단하여 효율성 및 경제성이 우수하다.
    알파-사이클로덱스트린, 관형집합체

    유기 발광 표시 장치 및 그 제조 방법
    166.
    发明公开
    유기 발광 표시 장치 및 그 제조 방법 有权
    有机发光显示器及其制造方法

    公开(公告)号:KR1020090093744A

    公开(公告)日:2009-09-02

    申请号:KR1020080056183

    申请日:2008-06-16

    Inventor: 홍용택 양지훈

    CPC classification number: H01L21/3065 H01L51/0096 H01L51/442 H01L2027/11879

    Abstract: An organic light emitting display device with uniform brightness and high resolution and a manufacturing method thereof are provided to prevent a voltage drop of a negative electrode by including the negative electrode with at least two sub block electrodes. A transistor and a wiring line are formed on a substrate. A positive electrode is formed on the substrate. A negative electrode(120) is arranged to face the positive electrode. The negative electrode includes at least two sub block electrodes(121). Two sub block electrodes are physically separated. An organic layer is interposed between the positive electrode and the negative electrode. The organic layer includes an organic light emitting layer. A bus line(115) is formed on the substrate. A bus line is electrically connected to the negative electrode through a connection electrode(122). A bus line and the positive electrode include the same conductive material.

    Abstract translation: 提供了具有均匀亮度和高分辨率的有机发光显示装置及其制造方法,以通过将至少两个子块电极包括负极来防止负极的电压降。 在基板上形成晶体管和布线。 在基板上形成正极。 负极(120)布置成面对正极。 负极包括至少两个子块电极(121)。 两个子块电极物理分离。 在正极和负极之间插入有机层。 有机层包括有机发光层。 在基板上形成总线(115)。 总线通过连接电极(122)与负极电连接。 总线和正极包括相同的导电材料。

    균일한 크기와 고품질 광발광 특성을 가지는 산화아연양자점 및 그 제조방법
    167.
    发明公开
    균일한 크기와 고품질 광발광 특성을 가지는 산화아연양자점 및 그 제조방법 无效
    具有单体和高质量光致发光的ZNO量子点及其制备方法

    公开(公告)号:KR1020090093096A

    公开(公告)日:2009-09-02

    申请号:KR1020080018433

    申请日:2008-02-28

    Inventor: 박종래 양승재

    CPC classification number: C01G9/02 B82Y20/00 B82Y30/00 B82Y40/00 C01P2004/64

    Abstract: A method for manufacturing ZnO quantum dots showing monodisperse and high quality photoluminescence is provided to secure regular size of 10 nanometer or less and high quality photoluminescence without surface treatments. A method for manufacturing ZnO quantum dots comprises the following steps of: treating carbon nanotubes with an acid solution in order to remove impurities and functionalize their surfaces; dispersing the acid-treated carbon nanotubes in a reaction solvent; mixing the carbon nanotube-dispersed solution together with a zinc precursor-containing solution in order to produce a carbon nanotube-metal ion composite; heat-treating the carbon nanotube-metal ion composite to produce a carbon nanotube-zinc oxide quantum dot composite; and separating the zinc oxide quantum dot from the carbon nanotubes.

    Abstract translation: 提供了显示单分散和高质量光致发光的ZnO量子点的制造方法,以确保不经表面处理的10纳米或更低的规则尺寸和高质量的光致发光。 制造ZnO量子点的方法包括以下步骤:用酸溶液处理碳纳米管以去除杂质并使其表面官能化; 将酸处理的碳纳米管分散在反应溶剂中; 将碳纳米管分散溶液与含锌前体溶液混合以制备碳纳米管 - 金属离子复合物; 热处理碳纳米管 - 金属离子复合材料制成碳纳米管 - 氧化锌量子点复合材料; 并将氧化锌量子点与碳纳米管分离。

    발광 장치 및 발광 장치 제조 방법
    168.
    发明公开
    발광 장치 및 발광 장치 제조 방법 有权
    发光装置及制造发光装置的方法

    公开(公告)号:KR1020090092931A

    公开(公告)日:2009-09-02

    申请号:KR1020080018186

    申请日:2008-02-28

    Inventor: 홍용택 정승준

    Abstract: A light emitting device and a manufacturing method thereof are provided to exclude an additional power supply line by driving a light emitting device using an induced electromotive force. A light emitting device includes a power supply unit and a light emitting unit. The light emitting unit includes a light emitting device layer(210), a third layer(220), a coil(230), a via hole(242), and a protective layer(250). The light emitting device layer is deposited on an upper surface of the third layer. The coil is printed in the bottom of the third layer by the inkjet printing method. The coil converts the magnetic energy from the power supply unit into the electric energy. One end of the coil contacts with one of an electrode injection electrode(214) and a hole injection electrode(218) of the light emitting device layer through the via hole. The other end of the coil contacts with one of the electron injection electrode and the hole injection electrode of the light emitting device layer. The protective layer protects the coil.

    Abstract translation: 提供发光器件及其制造方法,以通过使用感应电动势驱动发光器件来排除附加电源线。 发光装置包括电源单元和发光单元。 发光单元包括发光器件层(210),第三层(220),线圈(230),通孔(242)和保护层(250)。 发光器件层沉积在第三层的上表面上。 线圈通过喷墨打印方法印刷在第三层的底部。 线圈将来自电源单元的磁能转换成电能。 线圈的一端通过通孔与发光器件层的电极注入电极(214)和空穴注入电极(218)中的一个接触。 线圈的另一端与发光器件层的电子注入电极和空穴注入电极中的一个接触。 保护层保护线圈。

    글루코코르티코이드계 화합물을 포함하는 뇌신경질환의 치료 또는 예방용 약학 조성물
    169.
    发明公开
    글루코코르티코이드계 화합물을 포함하는 뇌신경질환의 치료 또는 예방용 약학 조성물 无效
    用于治疗或预防包含葡萄球菌化合物的神经病性脑病的药物组合物

    公开(公告)号:KR1020090090487A

    公开(公告)日:2009-08-26

    申请号:KR1020080015725

    申请日:2008-02-21

    Inventor: 이성중 김보경

    CPC classification number: A61K31/58

    Abstract: A pharmaceutical composition for preventing or treating cranial nerve diseases is provided to reduce the apoptosis of nerve cell using a triamcinolone and acetenite. A pharmaceutical composition for preventing and treating cranial nerve diseases comprises glucocordicoid based compound or its pharmaceutically acceptable salt as an active ingredient. The cranial nerve diseases is selected among dementia, Parkinson disease, Alzheimer diseases, huntington disease, amyotrophic lateral sclerosis, Parkinson-ALS-dementia complex, and progressive supranuclear palsy.

    Abstract translation: 提供了用于预防或治疗颅神经疾病的药物组合物,以使用曲安奈德和乙酸钠降低神经细胞的凋亡。 用于预防和治疗颅神经疾病的药物组合物包括作为活性成分的基于葡萄糖类的化合物或其药学上可接受的盐。 颅神经疾病选自痴呆,帕金森病,阿尔茨海默病,亨廷顿病,肌萎缩性侧索硬化,帕金森病ALS-痴呆综合征和进行性核上性麻痹。

    면역조절에 의한 캔디다알비칸스 기인성 질환의 치료
    170.
    发明公开
    면역조절에 의한 캔디다알비칸스 기인성 질환의 치료 有权
    经免疫球蛋白治疗糖尿病感染性疾病

    公开(公告)号:KR1020090085875A

    公开(公告)日:2009-08-10

    申请号:KR1020080011774

    申请日:2008-02-05

    CPC classification number: A61K31/19 A61K36/064 Y10S514/825 Y10S514/885

    Abstract: A treatment of Candida albicans diseases is provided to inhibit the generation of nitrogen oxide from macrophage, regulate the proliferation of T-lymphocyte and B-lymphocyte and induce Th1 immune response. An immune modulator comprises 18 beta-GA. The 18 beta-GA is an aglycone which sugar is removed from a glycyrrhizin. The immune modulator regulates T-lymphocyte and B-lymphocyte based on the concentration of 18 beta-GA. A method for regulating immune comprises a step of administering pharmaceutically effective amount of 18 beta-GA into each individual. The 18 beta-GA is formulated in a vaccine mixing with C.albicans cell wall (CACW).

    Abstract translation: 提供治疗白念珠菌疾病以抑制巨噬细胞产生氮氧化物,调节T淋巴细胞和B淋巴细胞的增殖并诱导Th1免疫应答。 免疫调节剂包含18个β-GA。 18β-GA是从甘草甜素中除去糖的糖苷配基。 免疫调节剂基于18β-GA的浓度调节T淋巴细胞和B淋巴细胞。 用于调节免疫的方法包括向每个个体施用有效量的18β-GA的步骤。 将18个β-GA配制成与白色念珠菌细胞壁(CACW)混合的疫苗。

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