公开(公告)号：KR101344483B1

公开(公告)日：2013-12-24

申请号：KR1020070063826

申请日：2007-06-27

Applicant: 삼성전자주식회사

Inventor： 김선일 ,  송이헌 ,  박영수 ,  강동훈 ,  김창정 ,  박재철

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: 박막트랜지스터에관해개시되어있다. 개시된본 발명의박막트랜지스터는게이트절연층을사이에두고형성된게이트전극및 채널층, 및상기채널층의양단과각각접촉된소오스전극및 드레인전극을포함하되, 상기채널층은전이금속이도핑된 IZO(Indium Zinc Oxide)를포함하는것을특징으로한다.

公开(公告)号：KR1020120108233A

公开(公告)日：2012-10-05

申请号：KR1020110025884

申请日：2011-03-23

Applicant: 삼성전자주식회사

Inventor： 김언정 ,  김선일 ,  이상진

IPC: G02F1/1343 ,  G02F1/1335 ,  C01B31/02 ,  B82B1/00

CPC classification number: G02F1/13439 ,  H04N13/305 ,  H04N13/359 ,  H04N13/361 ,  B82B1/002 ,  C01B32/158 ,  C01B32/182 ,  C01B2202/02 ,  C01B2202/06

Abstract: PURPOSE: An active optical device and a display device with the same are provided to determine on/off for an applied voltage. CONSTITUTION: A plurality of carbon nanotubes(140) are formed on a graphene layer. A transparent electrode layer(170) is separated from the carbon nanotubes. A liquid crystal layer(150) is formed between the graphene layer and the transparent electrode layer. A plurality of catalysts(130) are formed between the graphene layer and the carbon nanotubes. The catalysts are separated from each other.

Abstract translation: 目的：提供有源光学装置及其显示装置，以确定施加电压的开/关。 构成：在石墨烯层上形成多个碳纳米管（140）。 透明电极层（170）与碳纳米管分离。 在石墨烯层和透明电极层之间形成液晶层（150）。 在石墨烯层和碳纳米管之间形成多个催化剂（130）。 催化剂彼此分离。

公开(公告)号：KR1020120095151A

公开(公告)日：2012-08-28

申请号：KR1020110014649

申请日：2011-02-18

Applicant: 삼성전자주식회사

Inventor： 김선일 ,  박재철 ,  김창정 ,  김상욱

IPC: H01L27/146 ,  H01L31/115 ,  G01T1/24

CPC classification number: H01L27/14659 ,  H01L27/14632 ,  H01L27/14676 ,  G01T1/24 ,  H01L31/115

Abstract: PURPOSE: An X-ray detector including a diffusion preventing layer is provided to prevent the deterioration of a photo conductor by preventing a contact between a pixel electrode and the photo conductor. CONSTITUTION: A transistor and a signal storage capacitor are serially arranged on a substrate. An insulation layer covers the transistor and the capacitor on the substrate. A pixel electrode(111) is connected to a top electrode of the capacitor on the insulation layer. A first diffusion preventing layer(112) covers the pixel electrode on the insulation layer. A photoconductor(110) is formed on the first diffusion preventing layer. A common electrode is formed on the photo conductor. A signal processing unit(150) is connected to a drain electrode of the transistor.

Abstract translation: 目的：提供包括防扩散层的X射线检测器，通过防止像素电极和光导体之间的接触来防止光导体的劣化。 构成：晶体管和信号存储电容串联设置在基板上。 绝缘层覆盖晶体管和基板上的电容器。 像素电极（111）连接到绝缘层上的电容器的顶部电极。 第一扩散防止层（112）覆盖绝缘层上的像素电极。 在第一扩散防止层上形成光电导体（110）。 在光导体上形成公共电极。 信号处理单元（150）连接到晶体管的漏电极。

公开(公告)号：KR1020120067750A

公开(公告)日：2012-06-26

申请号：KR1020100129311

申请日：2010-12-16

Applicant: 삼성전자주식회사

Inventor： 김선일 ,  최준희

IPC: G02F1/1334

CPC classification number: G02B3/14 ,  G02F1/13342 ,  G02F1/134309 ,  G02F1/292 ,  G02F2202/36 ,  G03H1/22 ,  G02F1/1334 ,  G02F1/1335

Abstract: PURPOSE: An active optical device using a local electrode is provided to modulate a refractive index with a low driving voltage. CONSTITUTION: A plurality of refractive index variable areas(170) are formed on a substrate. A voltage applying unit forms an electric field on the refractive index variable areas. The refractive index variable areas include internal spaces and liquid crystal materials. The internal spaces are formed on the substrate. The internal spaces are filled with the liquid crystal materials.

Abstract translation: 目的：提供使用局部电极的有源光学器件，以低驱动电压调制折射率。 构成：在基板上形成多个折射率可变区域（170）。 电压施加单元在折射率可变区域上形成电场。 折射率可变区域包括内部空间和液晶材料。 内部空间形成在基板上。 内部空间充满液晶材料。

公开(公告)号：KR1020120054408A

公开(公告)日：2012-05-30

申请号：KR1020100115764

申请日：2010-11-19

Applicant: 삼성전자주식회사

Inventor： 김선일 ,  최준희 ,  김종민

IPC: G02B26/00 ,  G02F1/19

CPC classification number: G02F1/0147 ,  G02F1/292 ,  G02F2201/305 ,  G02F2202/32 ,  G02B26/00 ,  G02B26/06 ,  G02F1/19

Abstract: PURPOSE: An activeness optical element which uses phase change material is provided to variously modulate the property of incident light with a fast reaction speed by applying material causing phase transformation at prescribed temperatures. CONSTITUTION: An activeness optical element(100) comprises an optical variable layer(150) including material in which a refractive index is changed according to temperature change, and a temperature control means which locally controls the temperature of the optical variable layer. The optical variable layer is composed of a vanadium dioxide thin film. The temperature control means comprises a micro heating array(130) which discharges heat for forming a periodic refractive index alternating pattern on the variable layer. The micro heating array comprises a plurality of heating zones(132) heated by electrical control.

Abstract translation: 目的：提供使用相变材料的活性光学元件，通过施加在规定温度下引起相变的材料，以快速的反应速度来不同地调制入射光的性质。 构成：活性光学元件（100）包括光学可变层（150），其包括折射率根据温度变化而改变的材料，以及局部控制光学可变层的温度的温度控制装置。 光学变化层由二氧化钒薄膜构成。 温度控制装置包括一个微热加热阵列（130），其在可变层上放热以形成周期性折射率交替图案。 微加热阵列包括通过电气控制加热的多个加热区（132）。

公开(公告)号：KR1020100121256A

公开(公告)日：2010-11-17

申请号：KR1020090040323

申请日：2009-05-08

Applicant: 삼성전자주식회사

Inventor： 박성호 ,  송이헌 ,  이욱 ,  김상욱 ,  김선일 ,  박재철

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1225 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14689

Abstract: PURPOSE: A CMOS image sensor is provided to reduce the size of a unit pixel and improve the sensitivity of the unit pixel at the same time by increasing the area of a photodiode within the unit pixel. CONSTITUTION: A plurality of photo diodes(102) is arranged in two dimension array. An inter-layer insulating film(110) is formed on the photo diode. A first metal layer(120) is formed on the inter-layer insulating film. A first inter-metal insulator(130) is formed on the first metal layer. An oxide semiconductor transistor layer(140) is formed on the first inter-metal insulator.

Abstract translation: 目的：提供CMOS图像传感器，通过增加单位像素内的光电二极管的面积来减小单位像素的大小，同时提高单位像素的灵敏度。 构成：多个光电二极管（102）被布置成二维阵列。 在光电二极管上形成层间绝缘膜（110）。 第一金属层（120）形成在层间绝缘膜上。 第一金属间绝缘体（130）形成在第一金属层上。 在第一金属间绝缘体上形成氧化物半导体晶体管层（140）。

公开(公告)号：KR1020100094191A

公开(公告)日：2010-08-26

申请号：KR1020090013503

申请日：2009-02-18

Applicant: 삼성전자주식회사

Inventor： 김선일 ,  김종민

IPC: G02F1/1335 ,  B82Y40/00

CPC classification number: G02F1/29 ,  G02B3/14 ,  G02B26/004 ,  G02F1/1323 ,  G02F1/13439 ,  G02F2001/294 ,  G02F2202/36 ,  H04N13/305 ,  H04N13/359

Abstract: PURPOSE: A two/three dimensional integrated image system for enhancing the quality of the three-dimensional image is provided to display the two/three dimensional integrated image. CONSTITUTION: A lens member(100) of a tabular structure includes first and second substrates(109, 101), a liquid crystal layer(105), and nanostructures arrays and first/second electrodes. The liquid crystal layer is packed between the first and the second substrate. The nanostructures array is grown up to be projected from one or more substrate of the first and the second substrate. The first and the second electrode prepare in the first and the second substrate in order to sanction voltage in the nanostructures array.

Abstract translation: 目的：提供用于提高三维图像质量的二维/三维集成图像系统，以显示二维/三维综合图像。 构成：片状结构的透镜部件（100）包括第一和第二基板（109,101），液晶层（105）和纳米结构阵列和第一/第二电极。 液晶层被填充在第一和第二基板之间。 生长纳米结构阵列以从第一和第二基底的一个或多个基底突出。 第一和第二电极在第一和第二衬底中制备，以便对纳米结构阵列中的电压进行诊断。

公开(公告)号：KR1020100082576A

公开(公告)日：2010-07-19

申请号：KR1020090001942

申请日：2009-01-09

Applicant: 삼성전자주식회사

Inventor： 김상욱 ,  박성호 ,  김창정 ,  김선일

IPC: H01L29/786 ,  C09K13/04

CPC classification number: H01L29/7869 ,  H01L29/26

Abstract: PURPOSE: An oxide semiconductor and a thin film transistor including the same are provided to improve the stability and the reliability of the oxide semiconductor by adding hafnium to an indium oxide. CONSTITUTION: An oxide layer(12) is formed on a substrate(11) by a thermal oxidation process. A gate electrode(13) is formed on the oxide layer. A gate insulating layer(14) is formed on the substrate and the gate electrode. A channel(15) is formed on the gate insulating layer by adding hafnium to an indium oxide. A source(16a) and a drain(16b) are formed on both sides of the channel and the insulating layer.

Abstract translation: 目的：提供一种氧化物半导体和包括该氧化物半导体的薄膜晶体管，以通过向氧化铟中加入铪来提高氧化物半导体的稳定性和可靠性。 构成：通过热氧化工艺在衬底（11）上形成氧化物层（12）。 在氧化物层上形成栅电极（13）。 栅极绝缘层（14）形成在衬底和栅电极上。 通过向氧化铟添加铪，在栅极绝缘层上形成沟道（15）。 源极（16a）和漏极（16b）形成在沟道和绝缘层的两侧。

公开(公告)号：KR1020100081836A

公开(公告)日：2010-07-15

申请号：KR1020090001250

申请日：2009-01-07

Applicant: 삼성전자주식회사

Inventor： 박성호 ,  송이헌 ,  김창정 ,  김상욱 ,  김선일

IPC: H01L27/04 ,  H01L29/786 ,  H01L29/78

CPC classification number: H01L29/7869 ,  H01L29/4232 ,  H01L29/7424 ,  H01L29/78642 ,  H01L29/78645 ,  H01L29/78696

Abstract: PURPOSE: A logical circuit device including stacked semiconductor oxide transistors is provided to convert transistors from a depletion mode to an enhancement mode by regulating a threshold voltage between transistors. CONSTITUTION: A first semiconductor oxide transistor includes a first semiconductor oxide channel layer(CH1). A second semiconductor transistor includes a second semiconductor oxide channel layer(CH2). A body gate(V_body) is located between the first transistor and the second transistor. A negative voltage is applied to the body gate, and the threshold voltages of the first transistor and the second transistor are transferred toward a positive direction. A first gate oxide(GOX1) is formed between the body gate and the first channel layer. A second gate oxide(GOX2) is formed between the body gate and the second channel layer.

Abstract translation: 目的：提供包括堆叠的半导体氧化物晶体管的逻辑电路器件，以通过调节晶体管之间的阈值电压将晶体管从耗尽模式转换为增强模式。 构成：第一半导体氧化物晶体管包括第一半导体氧化物沟道层（CH1）。 第二半导体晶体管包括第二半导体氧化物沟道层（CH2）。 体栅（V_body）位于第一晶体管和第二晶体管之间。 向体栅施加负电压，第一晶体管和第二晶体管的阈值电压向正方向转移。 第一栅极氧化物（GOX1）形成在体栅和第一沟道层之间。 第二栅极氧化物（GOX2）形成在体栅和第二沟道层之间。

公开(公告)号：KR1020100001261A

公开(公告)日：2010-01-06

申请号：KR1020080061111

申请日：2008-06-26

Applicant: 삼성전자주식회사

Inventor： 김선일 ,  최윤선

IPC: G02B27/22

CPC classification number: G02B5/32 ,  G02B27/2278 ,  G03H2001/0439 ,  G03H2001/226 ,  G03H2223/12 ,  G03H2225/31 ,  G03H2260/12 ,  G03H2260/33 ,  H04N13/395 ,  G02B27/22 ,  G03B35/20 ,  H04N13/30

Abstract: PURPOSE: A 3-dimensional image display device and a method using a hologram optical element are provided to supply a three-dimensional image display device embodying 3D image by forming multiple images with different sense of depth by using a hologram medium. CONSTITUTION: A lighting part(110) is included of a plurality of light source parts(111,112). A hologram optical part(130) reproduces the light forming a plurality of screen images. A display panel(140) modulates the light playing in a hologram optical part according to a video signal. A plurality of light source parts is successively driven. The display panel successively modulates a plurality of sub-frame images divided from the one framed image into the same number with the number of the light source parts. A plurality of sub-frame images comprises a background image and a front image. The hologram optical part comprises hologram elements(131,132) on which a plurality of screen images is recorded.

Abstract translation: 目的：提供三维图像显示装置和使用全息光学元件的方法，通过使用全息图介质形成具有不同深度感的多个图像来提供体现3D图像的三维图像显示装置。 构成：多个光源部（111,112）中包括照明部（110）。 全息光学部件（130）再现形成多个屏幕图像的光。 显示面板（140）根据视频信号调制在全息光学部件中播放的光。 依次驱动多个光源部。 显示面板将从一个成帧图像划分的多个子帧图像依次调制为具有光源部分的数量的相同数量。 多个子帧图像包括背景图像和前面图像。 全息光学部件包括记录有多个屏幕图像的全息元件（131,132）。