POLARIZATION MODULATION PHOTOREFLECTANCE CHARACTERIZATION OF SEMICONDUCTOR QUANTUM CONFINED STRUCTURES
    172.
    发明申请
    POLARIZATION MODULATION PHOTOREFLECTANCE CHARACTERIZATION OF SEMICONDUCTOR QUANTUM CONFINED STRUCTURES 审中-公开
    半导体量子限制结构的极化调制光电特性

    公开(公告)号:WO2004107026A3

    公开(公告)日:2005-04-14

    申请号:PCT/US2004015622

    申请日:2004-05-19

    Abstract: A polarization modulation photoreflectance technique has been developed for optical characterization of semiconductor quantum confined structures. By using a tunable laser source in conjunction with polarization state modulation, a single beam modulation spectroscopy technique may be used to characterize the optical response of semiconductor materials and structures. Disclosed methods and instruments are suitable for characterization of optical signatures of quantum electronic confinement, including resolution of excitonic states at the band edge or other direct or indirect critical points in the band structure. This allows for characterization of semiconductor quantum well structures, for characterization of strain in semiconductor films, and for characterization of electric fields at semiconductor interfaces.

    Abstract translation: 已经开发了用于半导体量子限制结构的光学表征的偏振调制光反射技术。 通过结合极化状态调制使用可调激光源,可以使用单光束调制光谱技术来表征半导体材料和结构的光学响应。 公开的方法和仪器适用于量子电子约束的光学特征的表征,包括在带边缘处的激发态的分辨率或带结构中的其它直接或间接关键点。 这允许表征半导体量子阱结构,用于表征半导体膜中的应变以及用于表征半导体界面处的电场。

    POLARIZATION MODULATION PHOTOREFLECTANCE CHARACTERIZATION OF SEMICONDUCTOR QUANTUM CONFINED STRUCTURES
    173.
    发明申请
    POLARIZATION MODULATION PHOTOREFLECTANCE CHARACTERIZATION OF SEMICONDUCTOR QUANTUM CONFINED STRUCTURES 审中-公开
    半导体量子限制结构的极化调制光电特性

    公开(公告)号:WO2004107026A2

    公开(公告)日:2004-12-09

    申请号:PCT/US2004/015622

    申请日:2004-05-19

    IPC: G02F

    Abstract: A polarization modulation photoreflectance technique has been developed for optical characterization of semiconductor quantum confined structures. By using a tunable laser source in conjunction with polarization state modulation, a single beam modulation spectroscopy technique may be used to characterize the optical response of semiconductor materials and structures. Disclosed methods and instruments are suitable for characterization of optical signatures of quantum electronic confinement, including resolution of excitonic states at the band edge or other direct or indirect critical points in the band structure. This allows for characterization of semiconductor quantum well structures, for characterization of strain in semiconductor films, and for characterization of electric fields at semiconductor interfaces.

    Abstract translation: 已经开发了用于半导体量子限制结构的光学表征的偏振调制光反射技术。 通过使用可调激光源与偏振状态调制相结合,可以使用单光束调制光谱技术来表征半导体材料和结构的光学响应。 公开的方法和仪器适用于量子电子约束的光学特征的表征,包括在带边缘处的激发态的分辨率或带结构中的其它直接或间接关键点。 这允许表征半导体量子阱结构,用于表征半导体膜中的应变以及用于表征半导体界面处的电场。

    METHOD AND APPARATUS FOR DETERMINING THE SHAPE CHARACTERISTICS OF PARTICLES
    174.
    发明申请
    METHOD AND APPARATUS FOR DETERMINING THE SHAPE CHARACTERISTICS OF PARTICLES 审中-公开
    用于确定颗粒形状特征的方法和装置

    公开(公告)号:WO1995006238A1

    公开(公告)日:1995-03-02

    申请号:PCT/NL1994000188

    申请日:1994-08-09

    Abstract: To determine the shape characteristics of particles, a light beam (preferably a laser beam) is directed onto a transparent cell containing particles flowing therein and the intensity of the light scattered by the particles is measured with the aid of a photodetector array or a mask containing programmable light valves, comprising one or more concentric rings or parts of rings, at least one of which is provided with one or more isolated segments. The rings and the isolated segments are coupled to an energy meter, the signal amplitudes of which are statistically processed to give amplitude classes. The shape characteristics are determined from a graphical or numerical comparison of the amplitude classes. If at least one ring is subdivided into several segments, calculation of the correlation between the signals from the various ring segments leads to an accurate determination of the average shape characteristics of the particles.

    Abstract translation: 为了确定颗粒的形状特性,将光束(优选激光束)引导到包含在其中流动的颗粒的透明单元,并且借助于光电检测器阵列或含有 可编程光阀,包括一个或多个同心环或环的一部分,其中至少一个具有一个或多个隔离段。 环和隔离段耦合到能量计,其信号幅度被统计处理以产生幅度等级。 形状特征由幅度等级的图形或数值比较确定。 如果至少一个环被细分成若干段,则来自各个环段的信号之间的相关性的计算导致了颗粒的平均形状特征的精确确定。

    TIME GATED IMAGING THROUGH SCATTERING MATERIAL USING POLARIZATION AND STIMULATED RAMAN AMPLIFICATION
    175.
    发明申请
    TIME GATED IMAGING THROUGH SCATTERING MATERIAL USING POLARIZATION AND STIMULATED RAMAN AMPLIFICATION 审中-公开
    通过使用极化和刺激拉曼放大的散射材料进行时间成像

    公开(公告)号:WO1994016621A1

    公开(公告)日:1994-08-04

    申请号:PCT/US1994000159

    申请日:1994-01-06

    CPC classification number: G01N21/4795 G01N2021/1789 G01N2201/067

    Abstract: An apparatus for imaging into or through scattering materials (17) includes a source (20) for producing a broadband laser reference beam (R) and a Stokes illumination beam (Si) correlated to the reference beam. The Stokes illumination beam is transmitted into the scattering material to obtain a Stokes signal beam (Ss) having a first image carrying component and a first nonimage component. The reference beam and the Stokes signal beam are then separately delayed (Rd, Sd) and polarized (Rp, Sp), after which they are combined to produce a combined beam (C) having a Stokes component and a reference component. A Stimulated Raman amplifier (30) responsive to the combined beam produces an amplified signal beam (A) in which the image carrying component has been amplified by a higher gain factor than the nonimage component.

    Abstract translation: 用于成像到或通过散射材料(17)的装置包括用于产生宽带激光参考光束(R)的源极(20)和与参考光束相关的斯托克斯照明光束(Si)。 斯托克斯照明光束被传输到散射材料中以获得具有第一图像承载部件和第一非图像部件的斯托克斯信号光束(Ss)。 然后将参考光束和斯托克斯信号光束分别延迟(Rd,Sd)和偏振(Rp,Sp),之后它们被组合以产生具有斯托克斯分量和参考分量的组合光束(C)。 响应于组合光束的受激拉曼放大器(30)产生放大的信号光束(A),其中图像承载部件已被放大比非图像分量更高的增益因子。

    ADAPTIVE SPATIAL FILTER FOR SURFACE INSPECTION
    176.
    发明申请
    ADAPTIVE SPATIAL FILTER FOR SURFACE INSPECTION 审中-公开
    适用于表面检测的空间过滤器

    公开(公告)号:WO1993023734A1

    公开(公告)日:1993-11-25

    申请号:PCT/US1993004153

    申请日:1993-05-03

    CPC classification number: G02F1/134309 G01N21/95623 G01N2201/067 G02B27/46

    Abstract: An inspection apparatus for a light diffracting surface (w) employs a planar array of individually addressable light valves (69; 82; 84) for use as a spatial filter in an imaged Fourier plane of a diffraction pattern, with valves having stripe geometry (91; 93; 95) corresponding to positions of members (81; 83; 85) of the diffraction pattern, blocking light from those members. The remaining valve stripes, i.e. those not blocking light from diffraction order members, are open for transmission of light. Light (13; 31) directed onto the surface (w), such as a semiconductor wafer, forms elongated curved diffraction orders (65) from repetitive patterns of circuit features. The curved diffraction orders are transformed to linear orders by a Fourier transform lens (35a; 35b). The linear diffraction orders from repetitive patterns of circuit features are blocked, while light from non-repetitive features, such as dirt particles or defects, is allowed to pass through the light valves to a detector (47).

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