Abstract:
Light scattered from an illuminated spot (54) on a patterned wafer (56) is first passed through a dielectric filter (74) and then through an optical fiber bundle (76) to a detector (72). The filter (74) controls the aperture of the light that is passed to a desired azimuth angle and the optical fiber bundle (76) further limits the aperture.
Abstract:
A method of locating particle and defect features on a periodically patterned surface (16) uses multiple threshold intensity levels to identify features in the data stream produced by scanning the surface with a light beam (12) and detecting the light scattered (22) from the surface. High thresholds are assigned to regions of the surface with high background scatter, while low thresholds are assigned to regions of the surface with low background scatter. The scattered light (22) is detected with a wide dynamic range detector producing high resolution 12-bit pixel data capable of resolving the smallest particles and defects of interest in low scatter regions, while avoiding saturation in high scatter regions. Periodic pattern features (56) are removed from the data by mapping features from a plurality of periodically repeating die on the surface to a single die map and looking for overlapping features.
Abstract:
A stylus profilometer having a counterbalanced stylus with a motion transducer using a vane (41) moving between parallel, spaced-apart, conductive plates (35 and 37) which damp the motion of the vane by means of trapped air. The vane forms an electrode with the plates so that the combination is a pair of capacitors in a balanced bridge arrangement. Motion of the stylus causes an unbalance of the bridge indicative of the extent of stylus motion. A lever arm (59) associated with the stylus has a tip (57) influenced by a magnetic field which biases the stylus or controls force on a surface to be measured. The entire assembly has a very low moment of inertia to reduce the effects of vibration on the stylus and thereby increase resolution of the device and reduce damage to the substrate.
Abstract:
In an optical scanning system (200) for detecting particles and pattern defects on a sample surface (240), a light beam (238) is focused to an illuminated spot on the surface and the spot is scanned across a scan line. A detector (11b) is positioned adjacent to the surface to collect scattered light from the spot where the detector includes a one- or two-dimensional array of sensors. Light scattered from the illuminated spot at each of a plurality of positions along the scan line is focused onto a corresponding sensor in the array. A plurality of detectors symmetrically placed with respect to the illuminating beam detect laterally and forward scattered light from the spot.
Abstract:
A high sensitivity and high throughput surface inspection system directs a focused beam of light (38) at a grazing angle towards the surface to be inspected (40). Relative motion is caused between the beam (38) and the surface (40) so that the beam (38) scans a scan path covering substantially the entire surface and light scattered along the path is collected for detecting anomalies. The scan path comprises a plurality of arrays of straight scan path segments. The focused beam of light (38) illuminates an area of the surface between 5-15 microns in width and this system is capable of inspecting in excess of about 40 wafers per hour for 150 millimeter diameter wafers (6-inch wafers), in excess of about 20 wafers per hour for 200 millimeter diameter wafers (8-inch wafers) and in excess of about 10 wafers per hour for 300 millimeter diameter wafers (12-inch wafers).
Abstract:
A test device for calibrating an optical scanner wherein microscopic patterns (21) of light scattering elements (13, 15) simulate the scattering of light from particles or flaws of different sizes. Simulation of different particles sizes is achieved by means of clusters (25, 29, 33, 37) or arrays of these light scattering elements having different areawise densities. Patterns of such clusters or arrays are disposed on a surface with intervening spaces (17) where a random assortment of foreign particles may be expected. In this manner, the foreign particles may be directly compared to a test pattern. The test surface may be a semiconductor wafer (41) having a thin, inert coating with openings (45) therein forming the light scattering elements. The openings may be made by photolithographic techniques, i.e., masking and etching, so that various patterns on a surface may be all created simultaneously by the same process.
Abstract:
A single laser (30) is used to provide light for both dark (80) and bright field (60) detection. The laser beam is split into two beams by a Wollaston prism (40) and both beams are directed towards a sample (12) to be inspected to illuminate two areas (16, 18) of the sample. The light reflected by or transmitted through the sample at the two spots is then combined by the same or a different Wollaston prism and the phase shift caused by any anomaly of a sample is detected as a phase shift between the two beams by a bright field detector. Light scattered by the sample at the two spots is detected by a dark field detector. A halfwave plate (36) is used to orient the polarization plane of light from the laser incident on the Wollaston prism so that one of the two beams (52, 54) incident on the sample has a much higher intensity than the other and so that the sensitivity and the detection operation of dark field is not altered by the presence of two illuminated spots on the sample. A transparent dielectric at a suitable angle to the incident beam and the reflected or transmitted beam may be used to enhance bright field detection.
Abstract:
A light beam is directed towards a surface (12) along a direction normal to the surface (12). There is a scanning means (114, 116, 118) which causes the surface (12) to move so that the beam scans the surface (12) along a spiral path. Light scattered by the surface (12) within a first range of angles is collected by a first collection means (32, 34) and directed to a first detector (42), and light scattered within a second range is collected by a second collection means (38) and is directed to a second detector (44). The two ranges of collection angles are different, so that the first detector (42) is optimized to detect scattering from large particles, and the second detector (44) is optimized to detect light from small particles and defects.
Abstract:
An apparatus and method for inspecting a substrate (14), such as a semiconductor wafer, includes crossed cylindrical optical elements (44) that form an elliptical beam (40) that is caused to scan in parallel fashion at an oblique angle to the substrate (14). Preferably, the smaller dimension of the elliptical beam (40) is perpendicular to the direction of the scan of the beam across the wafer. A reflector (38) converts an angularly varying beam to a telecentrically scanning beam and also provides focusing only in the direction parallel to the telecentric scan.
Abstract:
An inspection apparatus for a light diffracting surface (w) employs a planar array of individually addressable light valves (69; 82; 84) for use as a spatial filter in an imaged Fourier plane of a diffraction pattern, with valves having stripe geometry (91; 93; 95) corresponding to positions of members (81; 83; 85) of the diffraction pattern, blocking light from those members. The remaining valve stripes, i.e. those not blocking light from diffraction order members, are open for transmission of light. Light (13; 31) directed onto the surface (w), such as a semiconductor wafer, forms elongated curved diffraction orders (65) from repetitive patterns of circuit features. The curved diffraction orders are transformed to linear orders by a Fourier transform lens (35a; 35b). The linear diffraction orders from repetitive patterns of circuit features are blocked, while light from non-repetitive features, such as dirt particles or defects, is allowed to pass through the light valves to a detector (47).