公开(公告)号：US5229331A

公开(公告)日：1993-07-20

申请号：US837453

申请日：1992-02-14

Applicant: Trung T. Doan ,  J. Brett Rolfson ,  Tyler A. Lowrey ,  David A. Cathey

Inventor： Trung T. Doan ,  J. Brett Rolfson ,  Tyler A. Lowrey ,  David A. Cathey

IPC: H01J1/304 ,  H01J9/02 ,  H01L21/3105

CPC classification number: H01J9/025 ,  H01L21/31053 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226

Abstract: A chemical mechanical polishing process for the formation of self-aligned gate structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a conformal insulating material, iii) deposited with a flowable insulating material, which is reflowed below the level of the tip, iv) optionally deposited with another insulating material, v) deposited with a conductive material layer, and vi) optionally, deposited with a buffering material, vii) planarized with a chemical mechanical planarization (CMP) step, to expose the conformal insulating layer, viii) wet etched to remove the insulating material and thereby expose the emission tip, afterwhich ix) the emitter tip may be coated with a material having a lower work function than silicon.

Abstract translation: 用于形成围绕用于场发射显示器中的电子发射尖端的自对准栅极结构的化学机械抛光工艺，其中发射尖端i）可选地通过氧化锐化，ii）用保形绝缘材料沉积，iii）沉积 具有可流动的绝缘材料，其被回流到尖端的水平面以下，iv）任选地沉积有另外的绝缘材料，v）沉积有导电材料层，以及vi）任选地沉积有缓冲材料，vii） 化学机械平面化（CMP）步骤，暴露保形绝缘层，viii）湿式蚀刻以去除绝缘材料，从而暴露发射尖端，之后ix）发射极尖端可以涂覆具有比硅功函数低的材料 。

公开(公告)号：TW498380B

公开(公告)日：2002-08-11

申请号：TW090117540

申请日：2001-07-19

Applicant: 松下電器產業股份有限公司

Inventor： 白鳥哲也 ,  秋山浩二 ,  黑川英雄

IPC: H01J

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/30469

Abstract: 本發明之目的在於提供一種電子放射元件，其經放射之電子的集束性比習知更能提昇者。
爰此，該元件係於基板上順序地積層陰極電極、絕緣層及電子導出電極，且由前述導出電極側到達陰極電極之孔的底面，具設與前述陰極電極接觸之電子放射層的電子放射元件。前述電子放射層係設成表面比前述陰極電極與絕緣層之界面更靠近基板側位置，前述電子放射層與前述陰極電極之接觸區域乃除外前述孔之底面的中心部，而限定於其周邊區域。
藉此，電子放射層係從位於其側面之陰極電極供給電子，因此構成其電子主要從電子放射層表面之端部放射，而能提昇電子集束性。

Abstract in simplified Chinese: 本发明之目的在于提供一种电子放射组件，其经放射之电子的集束性比习知更能提升者。 爰此，该组件系于基板上顺序地积层阴极电极、绝缘层及电子导出电极，且由前述导出电极侧到达阴极电极之孔的底面，具设与前述阴极电极接触之电子放射层的电子放射组件。前述电子放射层系设成表面比前述阴极电极与绝缘层之界面更靠近基板侧位置，前述电子放射层与前述阴极电极之接触区域乃除外前述孔之底面的中心部，而限定于其周边区域。 借此，电子放射层系从位于其侧面之阴极电极供给电子，因此构成其电子主要从电子放射层表面之端部放射，而能提升电子集束性。

公开(公告)号：EP2617049A1

公开(公告)日：2013-07-24

申请号：EP11773106.7

申请日：2011-09-16

Applicant: Centre National de la Recherche Scientifique CNRS

Inventor： MONTHIOUX, Marc ,  HOUDELLIER, Florent

IPC: H01J37/073 ,  H01J37/28 ,  H01J1/304

CPC classification number: H01J29/485 ,  B82Y20/00 ,  H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J37/073 ,  H01J37/28 ,  H01J2201/30411 ,  H01J2201/30415 ,  H01J2201/30426 ,  H01J2201/30434 ,  H01J2201/30469 ,  H01J2237/06316 ,  H01J2237/06341 ,  H01J2237/26

Abstract: The invention relates to a field-emission electron gun comprising an electron emission tip, an extractor anode, as well as a means for creating an electric-potential difference between the emission tip and the extractor anode. The emission tip comprises a metal tip and an end cone produced by chemical vapour deposition on a nanofilament, the cone being aligned and welded onto the metal tip. The invention can be used for a transmission electron microscope.

Abstract translation: 包括电子发射尖端，提取器阳极和在发射尖端和提取器阳极之间产生电位差的机构的场致发射电子枪。 发射尖端包括通过化学气相沉积在纳米丝上产生的金属尖端和端锥，锥体对准并焊接到金属尖端上。 电子枪可用于透射电子显微镜。

公开(公告)号：EP1313122A4

公开(公告)日：2007-10-31

申请号：EP01948020

申请日：2001-07-16

Applicant: MATSUSHITA ELECTRIC IND CO LTD

Inventor： SHIRATORI TETSUYA ,  AKIYAMA KOJI ,  KUROKAWA HIDEO

IPC: H01J9/02 ,  H01J1/304 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/30469

Abstract: An electron emission element capable of improving the focusing performance of emitted electrons. The electron emission element comprises a cathode electrode, an insulation layer, and an electron drawing electrode that are laminated in that order on a substrate, and an electron emission layer provided on the bottom surface of a hole reaching from the drawing electrode up to the cathode electrode with which the electron emission layer contacts, wherein the electron emission layer is provided so that the front surface thereof is closer to the substrate than the interface between the cathode electrode and the insulation layer, and the contact area between the electron emission layer and the cathode electrode is limited to a peripheral area, excluding the center portion, on the bottom surface of the hole. Accordingly, since the electron emission layer receives electrons from the cathode electrode positioned at the side surface thereof, electrons are mostly emitted from the ends of the front surface of the electron emission layer to thereby enhance the focusing performance of electrons.

公开(公告)号：EP1596411A3

公开(公告)日：2007-04-11

申请号：EP05007556.3

申请日：2005-04-06

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takeda, Toshihiko ,  Yamamoto, Keisuke ,  Kobayashi, Tamaki ,  Moriguchi, Takuto

IPC: H01J17/49 ,  H01J31/12

CPC classification number: H01J29/28 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/3165

Abstract: The present invention relates to an improved technique of an image display apparatus and a method for manufacturing the image display apparatus. The image display apparatus of the present invention is composed of a rear plate and a face plate disposed opposite to each other, the rear plate being equipped with a plurality of electron-emitting devices, each provided with a pair of electrodes and an electroconductive film including an electron-emitting region disposed between the electrodes, the face plate being equipped with a phosphor for displaying an image by being irradiated by electrons from the electron-emitting devices and a film exposed on a surface of the phosphor, the film comprising a metal or a metal compound material. The improved respects are that a film comprising the same metal or the same metal compound material as the metal or the metal compound material constituting the film exposed on the surface of the phosphor, the film formed on each of the electroconductive films of the plurality of electron-emitting devices to have a thickness in a range from 0.2 nm to 4.5 nm. Thereby, it is possible to provide an image display apparatus capable of keeping the homogeneity of brightness over a long period.

公开(公告)号：EP1702230A2

公开(公告)日：2006-09-20

申请号：EP04813818.4

申请日：2004-12-10

Applicant: Tang, Yin S.

Inventor： Tang, Yin S.

IPC: G02B27/10 ,  G02B6/04 ,  C03B37/023

CPC classification number: H01J9/025 ,  B29C67/0044 ,  B29D11/00663 ,  B29L2011/0075 ,  G02B6/2552 ,  H01J1/3044 ,  H01J2201/30426

Abstract: A method of forming a field emission device and the resulting device including emitters formed of fiber segments. Tips are formed on the fiber segments that have a radius substantially small by exposing the tips to a reactive liquid for a duration of time. The tips are coated with a low work function conducting material to form emitters.

公开(公告)号：EP0938122B1

公开(公告)日：2004-08-04

申请号：EP99108704.0

申请日：1997-04-15

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Koga, Keisuke ,  Hori, Yoshikazu ,  Yoshida, Takehito ,  Yamada, Yuka

IPC: H01J1/30 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/30426

公开(公告)号：EP0904159A4

公开(公告)日：2002-02-27

申请号：EP97922305

申请日：1997-03-28

Applicant: UNIV CALIFORNIA

Inventor： MUSKET RONALD G ,  BALOOCH MEDHI ,  SIEKHAUS WIGBERT J

IPC: B05D7/00 ,  C23C14/48 ,  C23C14/58 ,  H01J1/304 ,  H01J9/02 ,  H01L21/265 ,  B05D5/12 ,  C23C14/14 ,  C23C14/16

CPC classification number: C23C14/5806 ,  C23C14/48 ,  H01J9/022 ,  H01J2201/30426

Abstract: The work function of electron emitters can be modified by forming a modifying layer at the surface using low energy ion implantation, in a controlled environment, placing chosen elements below the surface of electron emitters as Cs implanted in Si(100) at four different doses illustrates. Sometimes implanted species are deep enough that they do not react with the atmosphere during subsequent low-temperature processing. Then, species implanted in the emitting surfaces are segregated using elevated temperature treatment of the emitters in vacuum and/or reactive gases. The implanted ions modify the work function at the surface, via thin layers of the implanted species on top of the emitter surfaces, or compounds or alloy layers at the surface of the emitters. Depending on the implanted species, the initial emitter material, and the environment, these layers can either increase or decease the work function of the emitter.

公开(公告)号：EP0939418A3

公开(公告)日：2000-12-13

申请号：EP99108499.7

申请日：1997-04-15

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Koga, Keisuke ,  Hori, Yoshikazu ,  Yoshida, Takehito ,  Yamada, Yuka

IPC: H01J1/30 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/30426

Abstract: A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function such that a high-concentration impurity layer is formed as an emission layer of the cathode in a surface region thereof and contains a charge carrier concentration higher than the charge carrier concentration of the substrate.

公开(公告)号：EP0938122A2

公开(公告)日：1999-08-25

申请号：EP99108704.0

申请日：1997-04-15

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Koga, Keisuke ,  Hori, Yoshikazu ,  Yoshida, Takehito ,  Yamada, Yuka

IPC: H01J1/30 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/30426

Abstract: A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.

Abstract translation: 引入电极形成在硅衬底上，介于上和下氧化硅膜之间，每个氧化硅膜具有对应于其中将形成阴极的区域的圆形开口。 塔形阴极形成在上，下氧化硅膜和引出电极的各个开口中。 每个阴极具有通过晶体各向异性蚀刻和硅的热氧化工艺形成的具有2nm或更小的半径的尖锐尖端部分。 在上下氧化硅膜和阴极的开口中暴露的硅衬底的表面的表面涂覆有由具有低功函数的材料制成的薄表面涂膜。