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    Tunable and switchable resonator and filter structures in single crystal piezoelectric MEMS devices using bimorphs
    183.
    发明授权
    Tunable and switchable resonator and filter structures in single crystal piezoelectric MEMS devices using bimorphs 有权
    使用双压电晶片的单晶压电MEMS器件中的可调谐和可切换谐振器和滤波器结构

    公开(公告)号：US09117593B2

    公开(公告)日：2015-08-25

    申请号：US14071173

    申请日：2013-11-04

    Applicant: RF Micro Devices, Inc.

    Inventor： Kushal Bhattacharjee

    IPC: H03H9/46 ,  H03H9/54 ,  H01G5/18 ,  H03H9/02 ,  H03H9/24 ,  B81B3/00

    CPC classification number: H01G5/18 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2201/0271 ,  B81B2201/032 ,  H03H9/02275 ,  H03H9/02409 ,  H03H9/2405 ,  H03H9/2463 ,  H03H9/462 ,  H03H9/467 ,  H03H2009/241

    Abstract: A MEMS device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. Notably, the piezoelectric layer is a bimorph including a first bimorph layer and a second bimorph layer. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with the first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the substrate, such that the second electrode is in contact with the second bimorph layer of the piezoelectric layer. The second electrode may include a first conducting section and a second conducting section, which are inter-digitally dispersed on the second surface.

    Abstract translation: MEMS器件包括衬底，形成在衬底的第一表面上的一个或多个锚固体和通过一个或多个锚固件悬挂在衬底的第一表面上的压电层。 值得注意的是，压电层是包括第一双晶片层和第二双晶片层的双晶片。 第一电极可以设置在面对基板的第一表面的压电层的第一表面上，使得第一电极与压电层的第一双压电晶片层接触。 第二电极可以设置在与衬底相对的压电层的第二表面上，使得第二电极与压电层的第二双压电晶片层接触。 第二电极可以包括第一导电部分和第二导电部分，其在数字上分散在第二表面上。

    Methods for forming a sealed liquid metal drop
    185.
    发明授权
    Methods for forming a sealed liquid metal drop 有权
    形成密封液态金属液滴的方法

    公开(公告)号：US09012254B2

    公开(公告)日：2015-04-21

    申请号：US13981946

    申请日：2012-07-31

    Applicant: Oren Aharon ,  Shai Feldman

    Inventor： Oren Aharon ,  Shai Feldman

    IPC: H01L21/00 ,  B81C1/00 ,  H01H29/00

    CPC classification number: H01H29/06 ,  B81B2201/018 ,  B81C1/00333 ,  B81C1/00341 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01H29/00 ,  H01H2029/008 ,  H01H2203/028

    Abstract: Methods for forming an enclosed liquid metal (LM) drop inside a sealed cavity by formation of LM components as solid LM component layers and reaction of the solid LM component layers to form the LM drop. In some embodiments, the cavity has boundaries defined by layers or features of a microelectronics (e.g. VLSI-CMOS) or MEMS technology. In such embodiments, the methods comprise implementing an initial microelectronics or MEMS process to form the layers or features and the cavity, sequential or side by side formation of solid LM component layers in the cavity, sealing of the cavity to provide a closed space and reaction of the solid LM components to form a LM alloy in the general shape of a drop. In some embodiments, nanometric reaction barriers may be inserted between the solid LM component layers to lower the LM eutectic formation temperature.

    Abstract translation: 通过形成作为固体LM组分层的LM组分形成密封空腔内的封闭液态金属（LM）滴的方法和固体LM组分层的反应形成LM滴。 在一些实施例中，空腔具有由微电子学（例如VLSI-CMOS）或MEMS技术的层或特征限定的边界。 在这样的实施例中，所述方法包括实现初始微电子学或MEMS工艺以形成所述层或特征，以及所述空腔，所述空腔中的固体LM组分层的顺序或并排形成，所述腔的密封以提供封闭空间和反应 的固体LM组分以形成一般形状的液滴的LM合金。 在一些实施方案中，可以在固体LM组分层之间插入纳米反应阻挡层以降低LM共晶形成温度。

    Elimination of silicon residues from MEMS cavity floor
    186.
    发明授权
    Elimination of silicon residues from MEMS cavity floor 有权
    消除来自MEMS腔体的硅残留物

    公开(公告)号：US08921165B2

    公开(公告)日：2014-12-30

    申请号：US13565693

    申请日：2012-08-02

    Applicant: Brian I. Troy ,  Mickael Renault ,  Thomas L. Maguire ,  Joseph Damian Gordon Lacey ,  James F. Bobey

    Inventor： Brian I. Troy ,  Mickael Renault ,  Thomas L. Maguire ,  Joseph Damian Gordon Lacey ,  James F. Bobey

    IPC: H01L21/82 ,  H01L21/66 ,  G01R31/26 ,  H01L21/00 ,  H01L23/28 ,  G01P15/08 ,  H01L21/70 ,  B81C1/00 ,  H01H1/00

    CPC classification number: B81C1/00484 ,  B81B3/0008 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81C2201/0108 ,  H01H1/0036 ,  H01H2001/0089

    Abstract: The present invention generally relates to a MEMS device in which silicon residues from the adhesion promoter material are reduced or even eliminated from the cavity floor. The adhesion promoter is typically used to adhere sacrificial material to material above the substrate. The adhesion promoter is the removed along with then sacrificial material. However, the adhesion promoter leaves silicon based residues within the cavity upon removal. The inventors have discovered that the adhesion promoter can be removed from the cavity area prior to depositing the sacrificial material. The adhesion promoter which remains over the remainder of the substrate is sufficient to adhere the sacrificial material to the substrate without fear of the sacrificial material delaminating. Because no adhesion promoter is used in the cavity area of the device, no silicon residues will be present within the cavity after the switching element of the MEMS device is freed.

    Abstract translation: 本发明一般涉及一种MEMS器件，其中来自粘合促进剂材料的硅残余物从空腔底板减少甚至消除。 粘合促进剂通常用于将牺牲材料粘附到衬底上方的材料上。 粘附促进剂与牺牲材料一起被去除。 然而，粘合促进剂在去除时将硅基残留物留在空腔内。 发明人已经发现，在沉积牺牲材料之前，可以从空腔区域去除粘合促进剂。 保留在基材的其余部分上的粘合促进剂足以将牺牲材料粘附到基材上，而不用担心牺牲材料分层。 因为在器件的空腔区域中没有使用粘合促进剂，所以在MEMS器件的开关元件被释放之后，腔内将不存在硅残余物。

    ELECTRONIC COMPONENT
    187.
    发明申请
    ELECTRONIC COMPONENT 审中-公开
    电子元件

    公开(公告)号：US20140202838A1

    公开(公告)日：2014-07-24

    申请号：US14236639

    申请日：2012-07-18

    Applicant: Akihiko Sano ,  Takeshi Fujiwara ,  Hidenori Maruyama ,  Tomonori Seki

    Inventor： Akihiko Sano ,  Takeshi Fujiwara ,  Hidenori Maruyama ,  Tomonori Seki

    IPC: H01H59/00

    CPC classification number: H01H59/0009 ,  B81B2201/018 ,  B81B2207/012 ,  B81B2207/095 ,  B81C1/00238 ,  B81C2203/035 ,  H01H2001/0078

    Abstract: An electronic component has a first member in which an electrostatic actuator is provided, a second member in which a drive integrated circuit for driving the electrostatic actuator is provided, and join parts that joins the first member and the second member while a surface on which the electrostatic actuator is provided in the first member and a surface on which the drive integrated circuit is provided in the second member are opposed to each other. The electrostatic actuator and the drive integrated circuit are disposed in a space surrounded by the first member, the second member, and the join parts.

    Abstract translation: 电子部件具有设置有静电致动器的第一部件，设置有用于驱动静电致动器的驱动集成电路的第二部件和与第一部件和第二部件连接的接合部， 静电致动器设置在第一构件中，并且在第二构件中设置有驱动集成电路的表面彼此相对。 静电致动器和驱动集成电路设置在由第一构件，第二构件和接合部包围的空间中。

    Structure for signal line, manufacturing method for signal line and switch using the signal line
    190.
    发明授权
    Structure for signal line, manufacturing method for signal line and switch using the signal line 失效
    信号线结构，使用信号线的信号线和开关的制造方法

    公开(公告)号：US08698310B2

    公开(公告)日：2014-04-15

    申请号：US13580391

    申请日：2010-12-09

    Applicant: Junya Yamamoto ,  Koji Narise

    Inventor： Junya Yamamoto ,  Koji Narise

    IPC: H01L21/762

    CPC classification number: H01P3/081 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2203/0136 ,  H01H59/0009 ,  H01H2001/0078 ,  H01P1/127

    Abstract: A structure for a signal line has the signal line having a base, a lower insulating layer formed at an upper surface of the base, a semiconductor layer disposed along a pathway at an upper surface of the lower insulating layer, at least a part of the semiconductor layer configured to transmit a signal, an upper insulating layer formed at an upper surface of the semiconductor layer, at least a part of the upper insulating layer being mounted along the semiconductor layer; and a strip conductor formed at an upper surface of the upper insulating layer, at least a part of the strip conductor being mounted along the upper insulating layer.

    Abstract translation: 用于信号线的结构具有信号线，其具有基底，形成在基底的上表面的下绝缘层，沿着位于下绝缘层上表面的路径设置的半导体层，至少部分 被配置为透射信号的半导体层，形成在所述半导体层的上表面的上绝缘层，所述上绝缘层的至少一部分沿着所述半导体层安装; 以及形成在所述上绝缘层的上表面处的带状导体，所述带状导体的至少一部分沿着所述上绝缘层安装。

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