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    CLADDING GRATING AND FIBER SIDE-COUPLING APPARATUS USING THE SAME
    11.
    发明申请
    CLADDING GRATING AND FIBER SIDE-COUPLING APPARATUS USING THE SAME 审中-公开
    使用相同的粘合剂和纤维侧连接装置

    公开(公告)号：US20090285528A1

    公开(公告)日：2009-11-19

    申请号：US12266920

    申请日：2008-11-07

    Applicant: CHUN LIN CHANG ,  SHENG LUNG HUANG ,  SHIH TING LIN ,  HONG XI CAO ,  CHIEH HU

    Inventor： CHUN LIN CHANG ,  SHENG LUNG HUANG ,  SHIH TING LIN ,  HONG XI CAO ,  CHIEH HU

    IPC: G02B6/34

    CPC classification number: G02B6/02061

    Abstract: A fiber side-coupling apparatus can be spliced with active fiber as a fiber-based side-coupler in series at both sides for distributively-pumped monolithic fiber lasers. This side-coupling apparatus includes a large-mode-area double-clad passive optical fiber. A cladding grating, formed on the cladding surface of the passive fiber, comprises a plurality of grating members and a reflection layer formed thereon. A laser diode bar array is disposed on one side of the optical fiber opposite the cladding grating. A collimation device, placed between the optical fiber and the laser diode bar array, is used to collect the pump beam to the cladding grating as much as possible in fast axis and collimate the pump beam to be incident to the cladding grating in slow axis as normally as possible. The collimated pump beams emitted from a laser diode bar array are normally incident to the cladding grating within the alignment tolerance of ±2 to ±4 degrees. Without the reentrance loss effect, the pump beams diffracted and reflected by the cladding grating propagates in the inner cladding of the passive fiber due to total internal reflection. In one embodiment, the grating member can be a binary or blazed cross section.

    Abstract translation: 纤维侧耦合装置可以用作为分布式泵浦单片光纤激光器的两侧串联的基于光纤的侧耦合器的有源光纤进行接合。 该侧耦合装置包括大模式双重双层无源光纤。 形成在被动光纤的包层表面上的包层光栅包括多个光栅部件和形成在其上的反射层。 激光二极管棒阵列设置在与包层光栅相对的光纤的一侧上。 放置在光纤和激光二极管棒阵列之间的准直装置用于尽可能快地将泵浦光束收集到包层光栅，并准直泵浦光束以慢轴入射到包层光栅，如 通常可能。 从激光二极管棒阵列发射的准直泵浦光束通常在±2至±4度的对准公差内入射到包层光栅。 没有折返损耗效应，由包层光栅衍射和反射的泵浦光由于全内反射而在无源光纤的内包层中传播。 在一个实施例中，光栅构件可以是二进制或闪耀的横截面。

    Lower die for a bending machine
    12.
    发明授权
    Lower die for a bending machine 失效

    公开(公告)号：US06644091B2

    公开(公告)日：2003-11-11

    申请号：US09746408

    申请日：2000-12-20

    Applicant: Fu-Shun Huang ,  Chun Lin Chang

    Inventor： Fu-Shun Huang ,  Chun Lin Chang

    IPC: B21D3704

    CPC classification number: B21D5/0236 ,  B21D5/0209

    Abstract: A lower die (10) for a bending machine includes a support member (40) and a work member (60), manufactured separately. The support member defines a longitudinal groove (44) in an upper surface thereof, a pair of longitudinal V-shaped slots (48) in opposite side walls thereof, and a plurality of screw holes (42) in a bottom surface thereof. A pair of shoulders (46) is formed on opposite sides of the groove. The work member comprises a position portion (66) for being accommodated in the groove, a pair of projections (68, 70) for abutting against the shoulders, and an upper wedge-shaped groove (72) for shaping a workpiece. The lower die is secured on a die shoe (20 or 20′) by screws (12) which extend through the die shoe and engage with the screw holes, or by engagement of the V-shaped slots with V-shaped protrusions (29′) of the die shoe (20′).

    Beam monitoring device, method, and system
    14.
    发明授权
    Beam monitoring device, method, and system 有权
    光束监测装置，方法和系统

    公开(公告)号：US08766207B2

    公开(公告)日：2014-07-01

    申请号：US13241392

    申请日：2011-09-23

    Applicant: Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    Inventor： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: H01J37/244

    CPC classification number: H01J37/244 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542

    Abstract: A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in a longitudinal direction and to facilitate rotation of the beam monitoring device about an axis.

    Abstract translation: 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 光束监视装置还包括控制臂。 控制臂可操作以便于在纵向方向上使光束监视装置的移动，并且便于光束监视装置围绕轴的旋转。

    Rotatable and tunable heaters for semiconductor furnace
    16.
    发明授权
    Rotatable and tunable heaters for semiconductor furnace 有权
    适用于半导体炉的可旋转和可调加热器

    公开(公告)号：US08536491B2

    公开(公告)日：2013-09-17

    申请号：US12409880

    申请日：2009-03-24

    Applicant: Zin-Chang Wei ,  Hsin-Hsien Wu ,  Chun-Lin Chang

    Inventor： Zin-Chang Wei ,  Hsin-Hsien Wu ,  Chun-Lin Chang

    IPC: F27D11/00 ,  H01L21/31 ,  H01L21/44

    CPC classification number: H01L21/324 ,  F27B17/0025 ,  H01L21/67109

    Abstract: A semiconductor furnace suitable for chemical vapor deposition processing of wafers. The furnace includes a thermal reaction chamber having a top, a bottom, a sidewall, and an internal cavity for removably holding a batch of vertically stacked wafers. A heating system is provided that includes a plurality of rotatable heaters arranged and operative to heat the chamber. In one embodiment, spacing between the sidewall heaters is adjustable. The heating system controls temperature variations within the chamber and promotes uniform film deposit thickness on the wafers.

    Abstract translation: 适用于晶圆化学气相沉积处理的半导体炉。 该炉包括具有顶部，底部，侧壁和用于可拆卸地保持一批垂直堆叠的晶片的内部空腔的热反应室。 提供了一种加热系统，其包括多个可旋转的加热器，其布置并可操作以加热该腔室。 在一个实施例中，侧壁加热器之间的间隔是可调节的。 加热系统控制室内的温度变化并且促进在晶片上均匀的膜沉积物厚度。

    ION IMPLANTATION WITH CHARGE AND DIRECTION CONTROL
    17.
    发明申请
    ION IMPLANTATION WITH CHARGE AND DIRECTION CONTROL 有权
    离子植入与充电和方向控制

    公开(公告)号：US20130140987A1

    公开(公告)日：2013-06-06

    申请号：US13308614

    申请日：2011-12-01

    Applicant: Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    Inventor： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: H01J37/06

    CPC classification number: H01J37/026 ,  H01J3/02 ,  H01J3/022 ,  H01J3/26 ,  H01J37/06 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/31705

    Abstract: The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.

    Abstract translation: 本公开提供了控制电子发射的各种有利的方法和装置。 本公开的更广泛形式之一涉及电子发射元件，其包括电子发射器，其包括设置在栅电极和阴极之间的电子发射区。 阳极设置在电子发射区域的上方，并且在阳极上设置电压组。 施加在栅电极和阴极之间的第一电压控制从电子发射区产生的电子量。 施加到阳极的第二电压提取产生的电子。 施加到电压组的第三电压控制通过阳极提取的电子的方向。

    METHOD AND SYSTEM FOR LOW TEMPERATURE ION IMPLANTATION
    19.
    发明申请
    METHOD AND SYSTEM FOR LOW TEMPERATURE ION IMPLANTATION 审中-公开
    用于低温离子植入的方法和系统

    公开(公告)号：US20100181500A1

    公开(公告)日：2010-07-22

    申请号：US12355443

    申请日：2009-01-16

    Applicant: Chun-Lin Chang ,  Zin-Chang Wei ,  Hsin-Hsien Wu

    Inventor： Chun-Lin Chang ,  Zin-Chang Wei ,  Hsin-Hsien Wu

    IPC: H01J37/08

    CPC classification number: C30B31/22

    Abstract: A method comprises pre-cooling a first semiconductor wafer outside of a process chamber, from a temperature at or above 15° C. to a temperature below 5° C. The pre-cooled first wafer is placed inside the process chamber after performing the pre-cooling step. A low-temperature ion implantation is performed on the first wafer after placing the first wafer.

    Abstract translation: 一种方法包括将处理室外的第一半导体晶片从等于或高于15℃的温度预先冷却至低于5℃的温度。预冷却的第一晶片在执行预处理之后放置在处理室内部 冷却步骤 在放置第一晶片之后，在第一晶片上进行低温离子注入。

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