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    DUAL SUBSTRATE ELECTROSTATIC MEMS SWITCH WITH MULTIPLE HINGES AND METHOD OF MANUFACTURE
    15.
    发明申请
    DUAL SUBSTRATE ELECTROSTATIC MEMS SWITCH WITH MULTIPLE HINGES AND METHOD OF MANUFACTURE 有权
    具有多个铰链的双基板静电MEMS开关及其制造方法

    公开(公告)号：US20160268084A1

    公开(公告)日：2016-09-15

    申请号：US15060630

    申请日：2016-03-04

    Applicant: Innovative Micro Technology

    Inventor： Christopher S. GUDEMAN ,  Paul J. RUBEL ,  Marin Sigurdson

    IPC: H01H59/00 ,  B81C1/00 ,  H01H49/00 ,  B81B7/00

    CPC classification number: H01H59/0009 ,  B81B7/00 ,  B81B2201/012 ,  B81C1/00341 ,  H01H49/00 ,  H01H2001/0084

    Abstract: Systems and methods for forming an electrostatic MEMS switch include forming a movable cantilevered beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate. The cantilevered beam may be formed by etching the perimeter shape in the device layer of an SOI substrate. An additional void may be formed in the movable beam such that it bends about an additional hinge line as a result of the additional void. This may give the beam and switch advantageous kinematic characteristics.

    Abstract translation: 用于形成静电MEMS开关的系统和方法包括在第一基板上形成可移动的悬臂梁，在第二基板上形成电触点，并且使用气密密封来连接两个基板。 可以通过形成穿过第二基板的厚度的通孔来进行对静电MEMS开关的电接入。 可以通过蚀刻SOI衬底的器件层中的周边形状来形成悬臂梁。 可移动梁中可能形成一个额外的空隙，使其由于附加的空隙而围绕另外的铰链线弯曲。 这可以给出光束并切换有利的运动特性。

    Method for forming through substrate vias with tethers
    16.
    发明授权
    Method for forming through substrate vias with tethers 有权
    通过带有系绳的衬底通孔形成的方法

    公开(公告)号：US09324613B2

    公开(公告)日：2016-04-26

    申请号：US14619068

    申请日：2015-02-11

    Applicant: Innovative Micro Technology

    Inventor： John C Harley ,  Zhimin J. Yao

    IPC: H01L21/768 ,  H01L21/84 ,  B81C1/00 ,  H01L21/288 ,  H01L21/02 ,  H01L21/321

    CPC classification number: H01L21/76898 ,  B81C1/00301 ,  H01L21/7682 ,  H01L2224/02372 ,  H01L2224/05548

    Abstract: A method for forming through silicon vias (TSVs) in a silicon substrate is disclosed. The method involves forming a silicon post as an substantially continuous annulus in a first side of a silicon substrate, removing material from an opposite side to the level of the substantially continuous annulus, removing the silicon post and replacing it with a metal material to form a metal via extending through the thickness of the substrate. The substantially continuous annulus may be interrupted by at least one tether which connects the silicon post to the silicon substrate. The tether may be formed of a thing isthmus of silicon, or some suitable insulating material.

    Abstract translation: 公开了一种在硅衬底中形成硅通孔（TSV）的方法。 该方法包括在硅衬底的第一侧中形成硅柱作为基本上连续的环状空间，从与基本上连续的环的水平面相反的一侧去除材料，去除硅柱并用金属材料代替它，以形成 金属通过延伸穿过衬底的厚度。 基本上连续的环可被至少一个将硅柱连接到硅衬底的系绳中断。 系绳可以由硅的地峡或一些合适的绝缘材料形成。

    SOLDER BUMP SEALING METHOD AND DEVICE
    18.
    发明申请
    SOLDER BUMP SEALING METHOD AND DEVICE 有权
    焊膏密封方法和装置

    公开(公告)号：US20160042902A1

    公开(公告)日：2016-02-11

    申请号：US14456972

    申请日：2014-08-11

    Applicant: Innovative Micro Technology

    Inventor： Benedikt ZEYEN ,  Vikram PATIL

    IPC: H01H59/00 ,  H01H49/00

    CPC classification number: H01H59/0009 ,  B81C1/00333 ,  H01H49/00 ,  H03H9/1057

    Abstract: A method for forming a cavity in a microfabricated structure, includes the sealing of that cavity with a low temperature solder. The method may include forming a sacrificial layer over a substrate, forming a flexible membrane over the sacrificial layer, forming a release hole through a flexible membrane to the sacrificial layer, introducing an etchant through the release hole to remove the sacrificial layer, and then sealing that release hole with a low temperature solder.

    Abstract translation: 用于在微细结构中形成空腔的方法包括用低温焊料密封该空腔。 该方法可以包括在衬底上形成牺牲层，在牺牲层上形成柔性膜，形成通过柔性膜到牺牲层的释放孔，通过释放孔引入蚀刻剂以去除牺牲层，然后密封 该释放孔与低温焊料。

    Resonant filter using mm wave cavity
    20.
    发明授权
    Resonant filter using mm wave cavity 有权

    公开(公告)号：US10826153B2

    公开(公告)日：2020-11-03

    申请号：US16261489

    申请日：2019-01-29

    Applicant: Innovative Micro Technology

    Inventor： Christopher S. Gudeman

    IPC: H01P11/00 ,  H01P7/06 ,  H01P1/208

    Abstract: Systems and methods for forming a mm wave resonant filter include a lithographically fabricated high Q resonant structure. The resonant structure may include a plurality of cavities, each cavity having a characteristic frequency that defines its passband. A filter may include a plurality of resonant structures, and each resonant structure may include a plurality of cavities. These cavities and filters may be fabricated lithographically.

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