公开(公告)号：WO2007084317A3

公开(公告)日：2007-10-04

申请号：PCT/US2007000698

申请日：2007-01-11

Applicant: QUALCOMM INC ,  CHUNG WONSUK ,  ZEE STEVE ,  SASAGAWA TERUO

Inventor： CHUNG WONSUK ,  ZEE STEVE ,  SASAGAWA TERUO

IPC: B81C1/00

CPC classification number: B81C1/00801 ,  B81B2201/047 ,  B81C2201/014 ,  G02B26/001 ,  Y10T428/31678

Abstract: The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer 104b between a sacrificial layer and an electrode 14a, 14b, 14c. The etch stop 104b may reduce undesirable over-etching of the sacrificial layer and the electrode 14a, 14b, 14c. The etch stop layer 104b may also serve as a barrier layer, buffer layer, and/or template layer. The etch stop layer 104b may include silicon-rich silicon nitride.

Abstract translation: 通过在牺牲层与电极14a，14b，14c之间采用蚀刻停止层104b来改善诸如干涉式调制器的MEMS装置的制造。 蚀刻停止层104b可以减少牺牲层和电极14a，14b，14c的不希望的过度蚀刻。 蚀刻停止层104b也可以用作阻挡层，缓冲层和/或模板层。 蚀刻停止层104b可以包括富硅氮化硅。

公开(公告)号：WO2007013939A1

公开(公告)日：2007-02-01

申请号：PCT/US2006/028096

申请日：2006-07-19

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  SASAGAWA, Teruo ,  CHUI, Clarence ,  KOTHARI, Manish ,  GANTI, Surya, Prakash ,  SAMPSELL, Jeffrey, B.

Inventor： SASAGAWA, Teruo ,  CHUI, Clarence ,  KOTHARI, Manish ,  GANTI, Surya, Prakash ,  SAMPSELL, Jeffrey, B.

IPC: B81B3/00

CPC classification number: G02B26/0841 ,  B81B2201/042 ,  B81B2203/0307 ,  B81C1/00595 ,  B81C2201/0136 ,  G02B6/3584 ,  G02B26/001

Abstract: A microelectromechanical systems device having support structures formed of sacrificial material that is selectively diffused with a dopant material or formed of a selectively oxidized metal sacrificial material. The microelectromechanical systems device includes a substrate having an electrode formed thereon. Another electrode is separated from the first electrode by a cavity and forms a movable layer, which is supported by support structures formed of a diffused or oxidized sacrificial material.

Abstract translation: 具有由牺牲材料形成的支撑结构的微机电系统装置，该牺牲材料选择性地用掺杂剂材料扩散或由选择性氧化的金属牺牲材料形成。 微机电系统装置包括其上形成有电极的基板。 另一电极通过空腔与第一电极分离，并形成可移动层，其由由扩散或氧化的牺牲材料形成的支撑结构支撑。

公开(公告)号：WO2012082358A1

公开(公告)日：2012-06-21

申请号：PCT/US2011/062417

申请日：2011-11-29

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  SASAGAWA, Teruo ,  ARBUCKLE, Brian

Inventor： SASAGAWA, Teruo ,  ARBUCKLE, Brian

IPC: H01L21/77 ,  H01L25/065 ,  H01L21/78

CPC classification number: H01L27/1266 ,  H01L21/7806 ,  H01L25/0657 ,  H01L2224/16 ,  H01L2225/0652 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/1461 ,  H01L2924/00

Abstract: This disclosure provides systems, processes, and apparatus implementing and using techniques for fabricating flexible integrated circuit (IC) device layers. In one implementation, a sacrificial layer is deposited on a substrate. The sacrificial layer can include amorphous silicon or molybdenum, by way of example. One or more electronic components are formed on the sacrificial layer. A polymer coating is provided on the one or more electronic components to define a coated device layer. The sacrificial layer is removed to release the coated device layer from the substrate. The sacrificial layer can be removed using a xenon difluoride gas or by etching, for example. Coated device layers made in accordance with this process can be stacked. The substrate can be formed of glass, silicon, a plastic, a ceramic, a compound semiconductor, and/or a metal, depending on the desired implementation. The electronic component(s) can include a passive component such as a resistor, an inductor, or a capacitor. The electronic component(s) can also or alternatively include an active component such as a transistor.

Abstract translation: 本公开提供用于制造柔性集成电路（IC）器件层的系统，工艺和装置实现和使用技术。 在一个实施方式中，牺牲层沉积在衬底上。 作为示例，牺牲层可以包括非晶硅或钼。 在牺牲层上形成一个或多个电子部件。 在一个或多个电子部件上提供聚合物涂层以限定涂覆的器件层。 去除牺牲层以从基底释放涂覆的器件层。 可以使用二氧化氙气体或通过蚀刻来除去牺牲层。 可以堆叠根据该工艺制成的涂覆器件层。 取决于所需的实施方式，衬底可以由玻璃，硅，塑料，陶瓷，化合物半导体和/或金属形成。 电子部件可以包括诸如电阻器，电感器或电容器的无源部件。 电子部件还可以或者可选地包括诸如晶体管的有源部件。

公开(公告)号：WO2012067827A1

公开(公告)日：2012-05-24

申请号：PCT/US2011/058992

申请日：2011-11-02

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  SASAGAWA, Teruo ,  ARBUCKLE, Brian, W. ,  CUMMINGS, William ,  BITA, Ion ,  LI, Kebin ,  RAO, Rashmi

Inventor： SASAGAWA, Teruo ,  ARBUCKLE, Brian, W. ,  CUMMINGS, William ,  BITA, Ion ,  LI, Kebin ,  RAO, Rashmi

IPC: G02B6/00 ,  F21V8/00

CPC classification number: G02B26/001 ,  G02B6/005 ,  Y10T29/49826

Abstract: This disclosure provides systems, methods and apparatus for providing illumination by using a light guide to distribute light. In one aspect, the light guide includes a light turning film (128) over an optically transmissive supporting layer (129). In some implementations, the light turning film may be formed of a material deposited in the liquid state. In some implementations, the light turning film may be formed of a photodefinable material, which may be glass, such a spin-on glass, or may be a polymer. In some other implementations, the glass is not photodefinable. The light turning film may have indentations (131) that define light turning features and a protective layer may be formed over those indentations. The protective layer may also be formed of a glass material, such as spin-on glass. The light turning features in the light guide film may be configured to redirect light out of the light guide. In some implementations, the redirected light may be applied to illuminate a display.

Abstract translation: 本公开提供了通过使用光导来分配光来提供照明的系统，方法和装置。 在一个方面中，光导包括光透射支撑层（129）上的光转向膜（128）。 在一些实施方案中，光转向膜可以由以液态沉积的材料形成。 在一些实施方案中，光转向膜可以由光可定义材料形成，其可以是玻璃，例如旋涂玻璃，或者可以是聚合物。 在一些其他实施方案中，玻璃不是可光定型的。 光转向膜可以具有限定光转动特征的凹口（131），并且可以在这些凹陷上形成保护层。 保护层也可以由诸如旋涂玻璃之类的玻璃材料形成。 导光膜中的光转动特征可以被配置为将光重新导向光导。 在一些实施方案中，可以应用重定向的光来照亮显示器。

公开(公告)号：WO2011119379A3

公开(公告)日：2012-01-05

申请号：PCT/US2011028549

申请日：2011-03-15

Applicant: QUALCOMM MEMS TECHNOLOGIES INC ,  TAO YI ,  ZHONG FAN ,  SASAGAWA TERUO

Inventor： TAO YI ,  ZHONG FAN ,  SASAGAWA TERUO

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81B2201/047 ,  G02B5/284 ,  G02B26/001 ,  G09G3/3466

Abstract: Mechanical layers and methods of shaping mechanical layers are disclosed. In one embodiment, a method includes depositing a support layer (85), a sacrificial layer (84) and a mechanical layer (34) over a substrate (20), and forming a support post (60) from the support layer. A kink (90) is formed adjacent to the support post in the mechanical layer. The kink comprises a rising edge (91) and a falling edge (92), and the kink is configured to control the shaping and curvature of the mechanical layer upon removal of the sacrificial layer.

Abstract translation: 公开了机械层和机械层成型方法。 在一个实施例中，一种方法包括在衬底（20）上沉积支撑层（85），牺牲层（84）和机械层（34），以及从支撑层形成支撑柱（60）。 在机械层中邻近支撑柱形成扭结（90）。 扭结包括上升沿（91）和下降缘（92），并且扭结构造成在去除牺牲层时控制机械层的成形和曲率。

公开(公告)号：WO2009036215A8

公开(公告)日：2009-08-20

申请号：PCT/US2008076077

申请日：2008-09-11

Applicant: QUALCOMM MEMS TECHNOLOGIES INC ,  YAN XIAOMING ,  HO CHOK ,  HEALD DAVID ,  GOUSEV EVGENI ,  HERTZLER BENJAMIN W ,  FLOYD PHILIP ,  SASAGAWA TERUO ,  LONDERGAN ANA ,  BITA ION ,  ZION TODD

Inventor： YAN XIAOMING ,  HO CHOK ,  HEALD DAVID ,  GOUSEV EVGENI ,  HERTZLER BENJAMIN W ,  FLOYD PHILIP ,  SASAGAWA TERUO ,  LONDERGAN ANA ,  BITA ION ,  ZION TODD

IPC: H01L21/311 ,  B01D53/68 ,  H01L21/3213

CPC classification number: H01L21/32135 ,  B01D53/002 ,  B01D2257/11 ,  B01D2257/2027 ,  H01L21/31116

Abstract: A method of fabricating an electromechanical device which comprises a step of etching a sacrificial layer with an etchant comprising a noble gas fluoride, e.g. xenon difluoride (XeF2). The efficiency of the etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

Abstract translation: 一种制造机电装置的方法，其包括用包括惰性气体氟化物的蚀刻剂蚀刻牺牲层的步骤，例如， 氙二氟化物（XeF2）。 可以以各种方式提高蚀刻工艺的效率，并且可以降低蚀刻工艺的成本。 未蚀刻的蚀刻剂可以在蚀刻过程中被隔离并再循环。 蚀刻副产物可以在蚀刻过程中从蚀刻系统中收集和去除。 蚀刻剂的组分可以被分离并用于一般的另外的蚀刻剂。 蚀刻剂或被蚀刻的层中的任一个或两者也可以针对特定的蚀刻工艺进行优化。

公开(公告)号：WO2007013992A1

公开(公告)日：2007-02-01

申请号：PCT/US2006/028276

申请日：2006-07-19

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  SASAGAWA, Teruo ,  CHUI, Clarence ,  KOTHARI, Manish ,  GANTI, Surya, Prakash ,  SAMPSELL, Jeffrey, B.

Inventor： SASAGAWA, Teruo ,  CHUI, Clarence ,  KOTHARI, Manish ,  GANTI, Surya, Prakash ,  SAMPSELL, Jeffrey, B.

IPC: B81B3/00

CPC classification number: G02B26/0841 ,  B81B2201/042 ,  B81B2203/0307 ,  B81C1/00595 ,  B81C2201/014 ,  G02B26/001

Abstract: A microelectromechanical systems device having support structures formed of sacrificial material surrounded by a protective material. The microelectromechanical systems device includes a substrate having an electrode formed thereon. Another electrode is separated from the first electrode by a cavity and forms a movable layer, which is supported by support structures formed of a sacrificial material.

Abstract translation: 具有由保护材料包围的牺牲材料形成的支撑结构的微机电系统装置。 微机电系统装置包括其上形成有电极的基板。 另一电极通过空腔与第一电极分离，并形成可移动层，该可移动层由牺牲材料形成的支撑结构支撑。

公开(公告)号：WO2011119379A2

公开(公告)日：2011-09-29

申请号：PCT/US2011/028549

申请日：2011-03-15

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  TAO, Yi ,  ZHONG, Fan ,  SASAGAWA, Teruo

Inventor： TAO, Yi ,  ZHONG, Fan ,  SASAGAWA, Teruo

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81B2201/047 ,  G02B5/284 ,  G02B26/001 ,  G09G3/3466

Abstract: Mechanical layers and methods of shaping mechanical layers are disclosed. In one embodiment, a method includes depositing a support layer (85), a sacrificial layer (84) and a mechanical layer (34) over a substrate (20), and forming a support post (60) from the support layer. A kink (90) is formed adjacent to the support post in the mechanical layer. The kink comprises a rising edge (91) and a falling edge (92), and the kink is configured to control the shaping and curvature of the mechanical layer upon removal of the sacrificial layer.

Abstract translation: 公开了机械层和机械层成型方法。 在一个实施例中，一种方法包括在衬底（20）上沉积支撑层（85），牺牲层（84）和机械层（34），以及从支撑层形成支撑柱（60）。 在机械层中邻近支撑柱形成扭结（90）。 扭结包括上升沿（91）和下降缘（92），并且扭结构造成在去除牺牲层时控制机械层的成形和曲率。

公开(公告)号：WO2007084317A2

公开(公告)日：2007-07-26

申请号：PCT/US2007/000698

申请日：2007-01-11

Applicant: QUALCOMM INCORPORATED ,  CHUNG, Wonsuk ,  ZEE, Steve ,  SASAGAWA, Teruo

Inventor： CHUNG, Wonsuk ,  ZEE, Steve ,  SASAGAWA, Teruo

IPC: B81C1/00

CPC classification number: B81C1/00801 ,  B81B2201/047 ,  B81C2201/014 ,  G02B26/001 ,  Y10T428/31678

Abstract: The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer 104b between a sacrificial layer and an electrode 14a, 14b, 14c. The etch stop 104b may reduce undesirable over-etching of the sacrificial layer and the electrode 14a, 14b, 14c. The etch stop layer 104b may also serve as a barrier layer, buffer layer, and/or template layer. The etch stop layer 104b may include silicon-rich silicon nitride.

Abstract translation: 通过在牺牲层和电极14a，14b，14c之间采用蚀刻停止层104b来改善诸如干涉式调制器之类的MEMS器件的制造。 蚀刻停止件104b可以减少牺牲层和电极14a，14b，14c的不希望的过蚀刻。 蚀刻停止层104b也可以用作阻挡层，缓冲层和/或模板层。 蚀刻停止层104b可以包括富硅的氮化硅。

公开(公告)号：WO2007078495A2

公开(公告)日：2007-07-12

申请号：PCT/US2006/045925

申请日：2006-11-30

Applicant: QUALCOMM INCORPORATED ,  WANG, Chun-Ming ,  LAN, Jeffrey ,  SASAGAWA, Teruo

Inventor： WANG, Chun-Ming ,  LAN, Jeffrey ,  SASAGAWA, Teruo

IPC: B81B3/00 ,  G02B26/08 ,  G02B26/00

CPC classification number: B81C1/00047 ,  B81B2201/047 ,  B81C2201/0108 ,  B81C2201/0111 ,  G02B26/001

Abstract: MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.

Abstract translation: 可以使用包含热可汽化聚合物以在可移动层和基底之间形成间隙的牺牲层来制造MEMS器件（例如干涉式调制器）。 一个实施例提供了一种制造MEMS器件的方法，该MEMS器件包括在衬底上沉积聚合物层，在聚合物层上形成导电层，并蒸发聚合物层的至少一部分以在衬底和电 导电层。 另一个实施例提供了制造干涉式调制器的方法，该方法包括提供衬底，在衬底的至少一部分上沉积第一导电材料，在第一导电材料的至少一部分上沉积牺牲材料，沉积绝缘体 在所述衬底上并且邻近所述牺牲材料以形成支撑结构，以及在所述牺牲材料的至少一部分上沉积第二导电材料，所述牺牲材料可通过热蒸发而被去除，从而在所述第一电 导电层和第二导电层。