公开(公告)号：WO2006068805A1

公开(公告)日：2006-06-29

申请号：PCT/US2005/043801

申请日：2005-12-01

Applicant: LAM RESEARCH CORPORATION ,  BENJAMIN, Neil ,  STEGER, Robert, J.

Inventor： BENJAMIN, Neil ,  STEGER, Robert, J.

IPC: H01L21/683

CPC classification number: H01L21/67248 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68714

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1°C per second.

Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座，绝热体，平坦的支架和加热器。 温度控制的基座在工作温度下控制在低于工件所需温度的温度。 热绝缘体设置在温度受控基底的至少一部分上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或安装到平坦支撑件的下侧。 加热器包括加热多个相应的加热区域的多个加热元件。 每个加热元件的供电功率和/或温度独立地被控制。 加热器和平坦支架的组合温度变化率每秒至少为1°C。

公开(公告)号：WO2005052995A2

公开(公告)日：2005-06-09

申请号：PCT/US2004/038287

申请日：2004-11-15

Applicant: LAM RESEARCH CORPORATION ,  STEGER, Robert, J.

Inventor： STEGER, Robert, J.

IPC: H01L

CPC classification number: G01J5/0003 ,  G01J5/0007

Abstract: In a plasma processing system, a method of determining the temperature of a substrate is disclosed. The method includes positioning the substrate on a substrate support structure, wherein the substrate support includes a chuck. The method further includes creating a temperature calibration curve for the substrate, the temperature calibration curve being created by measuring at least a first substrate temperature with an electromagnetic measuring device, and measuring a first chuck temperature with a physical measuring device during a first isothermal state. The method also includes employing a measurement from the electromagnetic measurement device and the temperature calibration curve to determine a temperature of the substrate during plasma processing.

Abstract translation: 在等离子体处理系统中，公开了一种确定基板温度的方法。 该方法包括将衬底定位在衬底支撑结构上，其中衬底支撑件包括卡盘。 该方法还包括为基板创建温度校准曲线，该温度校准曲线通过利用电磁测量装置测量至少第一基板温度来创建，并且在第一等温状态期间用物理测量装置测量第一卡盘温度。 该方法还包括使用来自电磁测量装置的测量结果和温度校准曲线来确定等离子体处理期间基板的温度。

公开(公告)号：WO2004027816A2

公开(公告)日：2004-04-01

申请号：PCT/US2003/029309

申请日：2003-09-16

Applicant: LAM RESEARCH CORPORATION ,  STEGER, Robert, J.

Inventor： STEGER, Robert, J.

IPC: H01J37/32

CPC classification number: H01J37/32623 ,  H01J37/32642

Abstract: A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.

Abstract translation: 一种用于在等离子体处理系统的等离子体处理室中处理多个基板的方法，每个基板设置在卡盘上并且在处理期间被边缘环包围。 该方法包括根据等离子体处理室中的给定工艺配方来处理多个基板中的第一基板。 该方法还包括调整沿等离子体处理室中的等离子体护套之间的电容路径和通过边缘环的卡盘之间的电容的电容值给定值。 该方法另外包括在调整之后根据等离子体处理室中的给定工艺配方来处理多个基板中的第二基板，其中执行调整而不需要边缘环的改变。

公开(公告)号：WO0100901A9

公开(公告)日：2002-12-27

申请号：PCT/US0040229

申请日：2000-06-14

Applicant: LAM RES CORP ,  STEGER ROBERT J ,  CHANG CHRIS

Inventor： STEGER ROBERT J ,  CHANG CHRIS

IPC: C23C18/31 ,  C23C18/36 ,  C23C18/50 ,  C23C18/54 ,  C23C28/00

CPC classification number: C23C28/321 ,  C23C18/36 ,  C23C28/00 ,  C23C28/34 ,  C23C28/345

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a metal surface such as aluminum or aluminum alloy, stainless steel, or refractory metal coated with a phosphorus nickel plating and an outer ceramic coating such as alumina, silicon carbide, silicon nitride, boron carbide or aluminum nitride. The phosphorus nickel plating can be deposited by electroless plating and the ceramic coating can be deposited by thermal spraying. To promote adhesion of the ceramic coating, the phosphorus nickel plating can be subjected to a surface roughening treatment prior to depositing the ceramic coating.

Abstract translation: 诸如等离子体室的半导体加工设备的耐腐蚀部件包括金属表面，例如铝或铝合金，不锈钢或涂覆有磷镍镀层的耐火金属和外部陶瓷涂层如氧化铝，碳化硅，氮化硅 ，碳化硼或氮化铝。 磷镀镍可以通过无电镀来沉积，陶瓷涂层可以通过热喷涂沉积。 为了促进陶瓷涂层的粘附，可以在沉积陶瓷涂层之前对磷镍镀层进行表面粗糙化处理。

公开(公告)号：WO0203415A3

公开(公告)日：2002-05-23

申请号：PCT/US0118623

申请日：2001-06-08

Applicant: LAM RES CORP ,  GOTTSCHO RICHARD A ,  STEGER ROBERT J

Inventor： GOTTSCHO RICHARD A ,  STEGER ROBERT J

IPC: H05H1/46 ,  B01J4/00 ,  B01J19/08 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/321 ,  H01J37/3244

Abstract: A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the component to a desired region of the process chamber. The component delivery mechanism further includes a spatial distribution switch coupled to the plurality of component outputs. The spatial distribution switch is arranged for directing the component to at least one of the plurality of component outputs. The component delivery mechanism also includes a single component source coupled to the spatial distribution switch. The single component source is arranged for supplying the component to the spatial distribution switch.

Abstract translation: 公开了一种用于在处理室内分配组件的组件传送机构。 该部件用于处理加工室内的工件。 部件输送机构包括用于将部件输出到处理室的期望区域的多个部件输出。 部件传送机构还包括耦合到多个部件输出的空间分配开关。 空间分布开关被布置用于将部件引导到多个分量输出中的至少一个。 组件传送机构还包括耦合到空间分配开关的单个组件源。 单组分源被安排用于将组分提供给空间分布开关。

公开(公告)号：WO2007041668A1

公开(公告)日：2007-04-12

申请号：PCT/US2006/038923

申请日：2006-10-03

Applicant: LAM RESEARCH CORPORATION ,  STEGER, Robert, J.

Inventor： STEGER, Robert, J.

IPC: H05B1/02

CPC classification number: H01L21/6831 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248

Abstract: An electrostatic chuck ("chuck") is provided for controlling a radial temperature profile across a substrate when exposed to a plasma. The chuck includes a number of independently controllable gas volumes that are each defined in a radial configuration relative to a top surface of the chuck upon which the substrate is to be supported. The chuck includes a support member and a base plate. The base plate positioned beneath and in a spaced apart relationship from the support member. The gas volumes are defined between the base plate and the support member, with separation provided by annularly-shaped thermally insulating dividers. Each gas volume can include a heat generation source. A gas pressure and heat generation within each gas volume can be controlled to influence thermal conduction through the chuck such that a prescribed radial temperature profile is achieved across the substrate.

Abstract translation: 提供静电卡盘（“卡盘”），用于当暴露于等离子体时，控制跨基板的径向温度分布。 卡盘包括多个可独立控制的气体体积，每个气体体积相对于卡盘的顶表面以径向构型限定，衬底将被支撑在该顶板表面上。 卡盘包括支撑构件和基板。 底板位于支撑构件下方并以间隔开的关系。 气体体积被限定在基板和支撑构件之间，由环形隔热分隔件提供隔离。 每个气体体积可以包括发热源。 可以控制每个气体体积内的气体压力和发热量，以影响通过卡盘的热传导，使得跨越衬底实现规定的径向温度分布。

公开(公告)号：WO2006088697A3

公开(公告)日：2006-08-24

申请号：PCT/US2006/004284

申请日：2006-02-08

Applicant: LAM RESEARCH CORPORATION ,  STEGER, Robert, J.

Inventor： STEGER, Robert, J.

IPC: B23Q17/00 ,  B21D39/03 ,  C23F1/00 ,  H01L21/26 ,  C23C16/00

Abstract: Methods for making gas distribution members for plasma processing apparatuses are provided. The gas distribution members can be electrodes, gas distribution plates, or other members. The methods include fabricating gas injection holes in a gas distribution member by a suitable technique, e.g., a mechanical fabrication technique, measuring gas flow through the gas distribution member, and then adjusting the permeability of the gas distribution member by the same fabrication technique, or by a different technique, e.g., laser drilling. The permeability of the gas distribution member can be adjusted at one or more zones of the member.

公开(公告)号：WO2005006400A2

公开(公告)日：2005-01-20

申请号：PCT/US2004/020749

申请日：2004-06-28

Applicant: LAM RESEARCH CORPORATION ,  STEGER, Robert, J.

Inventor： STEGER, Robert, J.

IPC: H01L

CPC classification number: F27D5/0037 ,  C23C16/4586 ,  C23C16/466 ,  H01J37/321 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/6831

Abstract: A substrate support useful for a plasma processing apparatus includes a metallic heat transfer member and an overlying electrostatic chuck having a substrate support surface. The heat transfer memeber includes one or more passage through which a liquid is circulated to heat and/or cool the heat transfer member. The heat transfer member has a low thermal mass and can be rapidly heated and/or cooled to a desired temperature by the liquid, so as to rapidly change the substrate temperature during plasma processing.

Abstract translation: 可用于等离子体处理装置的基板支撑件包括金属传热部件和具有基板支撑表面的上覆静电卡盘。 传热构件包括一个或多个通道，液体通过该通道循环以加热和/或冷却传热构件。 传热构件具有低热质量并且可以通过液体快速加热和/或冷却至所需温度，从而在等离子体处理期间快速改变衬底温度。

公开(公告)号：WO2004027816A3

公开(公告)日：2004-12-09

申请号：PCT/US0329309

申请日：2003-09-16

Applicant: LAM RES CORP ,  STEGER ROBERT J

Inventor： STEGER ROBERT J

IPC: H05H1/46 ,  C23C16/50 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32623 ,  H01J37/32642

Abstract: A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.

Abstract translation: 一种用于在等离子体处理系统的等离子体处理室中处理多个基板的方法，所述基板中的每一个设置在卡盘上并且在处理期间被边缘环围绕。 该方法包括根据等离子体处理室中的给定工艺配方处理多个衬底中的第一衬底。 该方法进一步包括随后调整沿着等离子体处理室中的等离子体鞘与通过边缘环的卡盘之间的电容路径的电容的电容的电容值达到给定值。 该方法另外包括在调整之后根据等离子体处理室中的给定工艺配方处理多个衬底中的第二衬底，其中在不需要改变边缘环的情况下执行调整。

公开(公告)号：WO2004077505A3

公开(公告)日：2004-09-10

申请号：PCT/US2004/004134

申请日：2004-02-12

Applicant: LAM RESEARCH CORPORATION ,  STEGER, Robert, J.

Inventor： STEGER, Robert, J.

IPC: H01J37/32

Abstract: An etching system for etching a wafer of a material has a measuring device, an etching chamber, and a controller. The measuring device measures the critical dimension test feature (CD) along the profile of the wafer at a plurality of preset locations. The etching chamber receives the wafer from the measuring device. The etching chamber includes a chuck supporting the wafer and a plurality of heating elements disposed within the chuck. Each heating element is positioned adjacent to each preset location on the wafer. The etching system controller is coupled to the measuring device to receive the actual measured CD's for a particular wafer. The etching system controller is also connected to the plurality of heating elements. The controller adjusts the temperature of each heating element during a process to reduce the variation of critical dimensions among the plurality of preset locations by using temperature dependent etching characteristics of the etch process to compensate for CD variation introduced by the lithography process preceding the etch process.