Abstract:
PURPOSE: A high sensitive infrared detector for an NDIR-type gas sensor using a wafer level packaging and a method for manufacturing the same are provided to reduce manufacturing cost and time using the junction of a wafer. CONSTITUTION: An upper substrate(121) includes a first cavity and an infrared filter and is bonded on the upper side of a lower substrate. A getter is formed in the upper substrate. A metal solder layer bonds the upper substrate and the lower substrate. At least one second cavity is formed on the upper side of the lower substrate. A sensor(113) and a support unit(115) are formed on the second cavity. The sensor senses infrared rays. The support unit supports the both side of the sensor.
Abstract:
NDIR 가스 센서용 고감도 적외선 감지 소자 및 그 제조방법이 제공된다. 본 발명은, 적어도 그 일면에 형성된 지지층을 갖는 기판; 그리고 상기 지지층상에 형성된 절연층;을 포함하고, 상기 기판 상부에는 요홈이 형성되어 있으며, 상기 요홈 상부에는 감지부와 그 감지부의 양측방으로 감지부를 지지하는 지지부가 형성되어 있으며, 그리고 상기 감지부와 지지부 각각은, 상기 절연층상에 형성된 전극패턴과, 상기 전극패턴 상에 형성된 보호층패턴을 포함하고, 상기 감지부는, 상기 절연층내 지지층상에 형성된 반사층패턴과 상기 보호층 패턴내 절연층상에 형성되어 상기 전극패턴과 연결되도록 구성된 감지층패턴을 포함하는 것을 특징으로 하는 NDIR 방식의 이산화탄소 가스 센서용 적외선 감지 소자 및, 그 제조방법에 관한 것이다. NDIR, 가스센서, 적외선, MEMS
Abstract:
A high sensitive infrared detector for an NDIR gas sensor and a manufacturing method thereof are provided to reduce process time by bulk etching an upper part of a substrate. A high sensitive infrared detector for an NDIR gas sensor comprises a substrate(210) having a supporting layer(230) formed on at least one side, an insulating layer(250) formed on the supporting layer, and a groove formed on the upper part of the substrate. The groove has a detection part on its upper side and a supporting part for supporting the detection part, wherein the detection part and the supporting part include an electrode pattern(253) formed on the insulation layer and a protective layer pattern(270) formed on the electrode pattern. The detection part has a reflection layer pattern(235) formed on the supporting layer inside the insulation layer, and a detection layer pattern(255) formed on the insulation layer in the protective layer pattern to be connected to the electrode pattern.
Abstract:
웨이퍼레벨패키징소자의제조방법이제공된다. 본발명의제조방법은, 상부 SOI 기판의실리콘구조층하부소정의위치에캐비티를형성하는공정; 상기캐비티가형성된구조층하부소정의위치에적외선필터층을형성하는공정; 상기적외선필터층이형성된구조층하부소정의위치에금속솔더층을형성하고, 이어, 다이싱레인을형성하는공정; 상기와같이제조된상부 SOI 기판을하부센서기판에접착시키는공정; 상기상부 SOI 기판을이루는실리콘캐리어층을제거함으로써절연체층을노출시키는공정; 및상기상부기판과하부센서기판을다이싱하는공정;을포함한다.
Abstract:
PURPOSE: A smart system using an infrared sensor and a method thereof are provided to sense thermal energy inside a sensing domain using the infrared sensor and to process the same into thermal images, thereby automatically controlling lightings, air conditioning devices, external intrusion detection, and fire detection by analyzing the thermal images. CONSTITUTION: A smart system using an infrared sensor comprises an infrared sensor module(110), an optical module(120), a signal processing module(130), a control module(140), a driving module(150), and a communication module(160). The infrared sensor module senses changes in thermal energy radiated to inside a sensing domain. The optical module is arranged so that the sensing domain of the infrared sensor module is determined. The signal processing module processes the changes in the thermal energy sensed by the infrared sensor into thermal images and outputs a result by determining the processed images. The control module outputs control signals corresponding to the output image result. The driving module drives each driving unit by the control signals output by the control module. The communication module transmits data signals performed by the driving module to a preset receiving device. [Reference numerals] (110) Infrared sensor module; (120) Optical module; (130) Signal processing module; (131) Thermal image processing unit; (132) Image detecting unit; (140) Control module; (150) Driving module; (151) Lighting drive unit; (152) Cooling and heating drive unit; (153) Fire monitoring drive unit; (154) External intrusion monitoring drive unit; (160) Communication module