公开(公告)号：KR1020080071538A

公开(公告)日：2008-08-04

申请号：KR1020080068339

申请日：2008-07-14

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠키하야시

IPC: H01L21/205 ,  H01L21/02

CPC classification number: C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

Abstract: A processing apparatus is provided to extend the lifetime of a chamber by forming a high-corrosion-resistant layer on an inner wall of the chamber. A processing apparatus includes a processing receptacle(11) and a processing unit. A processing target is stored in the processing receptacle. The processing unit performs a plasma process for the processing target in the processing receptacle. A layer(14) including a compound of a third group element of a periodic table is at least partially formed by using the compound of the third group element on a base material exposed to plasma within the processing receptacle. The amount of the compound of the third group element etched by plasma of a mixed gas of CF4, Ar, and O2 is smaller than the amount of an etched alumina member.

Abstract translation: 提供了一种处理装置，通过在室的内壁上形成高耐腐蚀层来延长室的使用寿命。 处理装置包括处理容器（11）和处理单元。 处理目标被存储在处理容器中。 处理单元对处理容器中的处理目标进行等离子体处理。 包含周期表第三组元素的化合物的层（14）至少部分地通过在处理容器内暴露于等离子体的基底材料上使用第三组元素的化合物形成。 通过CF4，Ar和O2的混合气体的等离子体蚀刻的第三族元素的化合物的量小于蚀刻的氧化铝构件的量。

公开(公告)号：KR1020070057116A

公开(公告)日：2007-06-04

申请号：KR1020070046601

申请日：2007-05-14

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠키하야시 ,  마츠다츠카사 ,  이케다교코

IPC: G01N21/00 ,  G01N21/47

CPC classification number: H01L21/67253 ,  G01N1/24 ,  G01N15/06 ,  G01N2015/0693

Abstract: A particle-measuring system and a particle measuring method are provided to correctly count particles generated by and discharged from a processing chamber to detect the generation of the particles. A chemical vapor deposition(CVD) apparatus(40) includes a processing unit(42) for forming a layer on a wafer(W) by a layer forming gas and a discharging system(44) for discharging the air in the processing unit or the layer forming gas. A particle measuring apparatus(46) for counting the number of particles in the discharged gas that flows the discharging system is mounted. The particle measuring apparatus is controlled by a control and processing unit(41) to perform an operation process. In addition, a display unit(43) for displaying formulas used for processing results or simulations or various parameters is provided. The controlling and processing unit can be built in a system controller for controlling the processing apparatus and can be separated. The processing unit includes a cylindrical or box-shaped processing chamber(48) formed of aluminum(Al).

Abstract translation: 提供粒子测量系统和粒子测量方法来正确地对由处理室产生和排出的微粒进行计数以检测颗粒的产生。 化学气相沉积（CVD）装置（40）包括一个处理单元（42），用于通过一层形成气体在一晶片（W）上形成一层，一排放系统（44），用于排出处理单元或 层形成气体。 安装用于对排出系统流动的排出气体中的颗粒数进行计数的颗粒测量装置（46）。 粒子测量装置由控制和处理单元（41）控制，以执行操作过程。 此外，提供了一种用于显示用于处理结果或模拟或各种参数的公式的显示单元（43）。 控制和处理单元可以内置在用于控制处理装置的系统控制器中并且可以分离。 处理单元包括由铝（Al）形成的圆柱形或箱状处理室（48）。

公开(公告)号：KR1019950034503A

公开(公告)日：1995-12-28

申请号：KR1019950001957

申请日：1995-02-03

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠키하야시

IPC: H01L21/205

Abstract: 알루미늄 전극의 표면에 양극산화에 의하여 알루마이트 피막을 형성함. 알루마이트 피막에 형성된 가느다란 구멍을 막는다. 이 후, 알루마이트 피막의 표면상에 질화실리콘막을 플라즈마 CVD에 의하여 형성한다. 표면에 알루마이트 피막 및 질화실리콘막이 차례로 적층된 알루미늄 전극을 이용한 플라즈마 에칭장치에 있어서, 프로세서 가스로서 HBr/HC1 가스를 이용하여 웨이퍼의 플라즈마에칭을 행한다. HBr/HC1로부터 발생한 활성 래디컬은, 웨이퍼를 에칭함과 함께, 알루미늄 전극을 공격한다. 알루미늄 전극은, 질화실리콘막으로 보호되어 있기 때문에, 알루미늄의 바탕 및 알루마이트피막이 에칭되는 것이 방지된다. 이 때문에, 알루미늄의 바탕 및 알루마이트 피막증의 불순물이 플라즈마 에칭장치의 챔버내로 날아흩어지지 않는다. 이 결과, 웨이퍼가 불순물로 오염되는 것이 방지된다.

公开(公告)号：KR100944571B1

公开(公告)日：2010-02-25

申请号：KR1020080067621

申请日：2008-07-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠키하야시

IPC: H01L21/205

CPC classification number: C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

Abstract: 본 발명의 처리 장치는 반도체 웨이퍼를 수용하고, 가열, 플라즈마, 프로세스 가스 중 어느 하나, 또는 이들의 조합에 의해서 해당 피처리 기판에 가공을 실시하는 처리를 실시하기 위한 부재가 수납된 챔버를 탑재하는 장치에 있어서, 상기 챔버 내부 벽면 및 챔버내에 노출되는 상기 부재 표면에 Al
2 O
3 및 Y
2 O
3 로 이루어진 막이 형성되고, 고내식성 및 절연성을 가지고, 프로세스 가스를 반도체 웨이퍼의 처리면상에 도입 및 확산시킴으로써, 플라즈마를 발생시키는 영역이나 챔버내에 수납된 부재에 생성물이 부착되지 않도록 하는 처리 장치이다.

Abstract translation: 本发明的处理装置包括用于容纳半导体晶片并且包含用于执行用于通过加热，等离子体和处理气体中的任一种来处理待处理基板的处理的构件或其组合 其中室内壁表面和暴露在室内的构件表面具有Al

公开(公告)号：KR100934508B1

公开(公告)日：2009-12-29

申请号：KR1020080080544

申请日：2008-08-18

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠키하야시

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

Abstract: A processing apparatus of the present invention has a mounted chamber holding a semiconductor wafer and having members for work-processing the substrate under any of heating, plasma and process gas or a combination of them, in which a film of Al2O3 and Y2O3 is formed on an inner wall surface of the chamber and on those exposed surface of the members within the chamber and has a high-corrosion resistance and insulating property and, when the process gas is introduced onto a processing surface of a semiconductor wafer and diffused into it, any product is less liable to be deposited on a plasma generation area and on those members held within the chamber.

Abstract translation: 本发明的处理装置具有安装室，该安装室保持半导体晶片，并且具有用于在加热，等离子体和处理气体中的任意一种或它们的组合中对基板进行加工处理的构件，其中在其上形成Al 2 O 3和Y 2 O 3膜 腔室的内壁面以及腔室内的部件的露出面，具有高耐腐蚀性和绝缘性，在将处理气体导入到半导体晶片的处理面而扩散到其内部的情况下， 产品不太容易沉积在等离子体产生区域和容纳在腔室内的那些部件上。

公开(公告)号：KR100934048B1

公开(公告)日：2009-12-24

申请号：KR1020080080533

申请日：2008-08-18

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠키하야시

IPC: H01L21/205

CPC classification number: C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

Abstract: A processing apparatus of the present invention has a mounted chamber holding a semiconductor wafer and having members for work-processing the substrate under any of heating, plasma and process gas or a combination of them, in which a film of Al2O3 and Y2O3 is formed on an inner wall surface of the chamber and on those exposed surface of the members within the chamber and has a high-corrosion resistance and insulating property and, when the process gas is introduced onto a processing surface of a semiconductor wafer and diffused into it, any product is less liable to be deposited on a plasma generation area and on those members held within the chamber.

Abstract translation: 本发明的处理装置具有安装室，该安装室保持半导体晶片，并且具有用于在加热，等离子体和处理气体中的任意一种或它们的组合中对基板进行加工处理的构件，其中在其上形成Al 2 O 3和Y 2 O 3膜 腔室的内壁面以及腔室内的部件的露出面，具有高耐腐蚀性和绝缘性，在将处理气体导入到半导体晶片的处理面而扩散到其内部的情况下， 产品不太容易沉积在等离子体产生区域和容纳在腔室内的那些部件上。

公开(公告)号：KR100922902B1

公开(公告)日：2009-10-22

申请号：KR1020080071397

申请日：2008-07-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠키하야시

IPC: H01L21/205

CPC classification number: C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

Abstract: 본 발명의 처리 장치는 반도체 웨이퍼를 수용하고, 가열, 플라즈마, 프로세스 가스 중 어느 하나, 또는 이들의 조합에 의해서 해당 피처리 기판에 가공을 실시하는 처리를 실시하기 위한 부재가 수납된 챔버를 탑재하는 장치에 있어서, 상기 챔버 내부 벽면 및 챔버내에 노출되는 상기 부재 표면에 Al
2 O
3 및 Y
2 O
3 로 이루어진 막이 형성되고, 고내식성 및 절연성을 가지고, 프로세스 가스를 반도체 웨이퍼의 처리면상에 도입 및 확산시킴으로써, 플라즈마를 발생시키는 영역이나 챔버내에 수납된 부재에 생성물이 부착되지 않도록 하는 처리 장치이다.

公开(公告)号：KR1020080072806A

公开(公告)日：2008-08-07

申请号：KR1020080067621

申请日：2008-07-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠키하야시

IPC: H01L21/205

CPC classification number: C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

Abstract: An etching resistant member and a manufacturing method thereof are provided to prevent a chamber from being etched by a cleaning gas or plasma by forming a corrosion resistant sprayed film on an inside of the chamber. A film growing apparatus(10) includes a chamber(11) having lower and upper chambers(11a,11b). The upper chamber is arranged on the lower chamber. The lower and upper chambers are integrated with each other. The upper chamber has a diameter smaller than that of the lower chamber. The lower chamber is made of a conductor(12), whose surface is anodized. The upper chamber is composed of a base material(13) and a film(14). The base material is made of a ceramic. The film contains a 3a-group element formed on an inner wall of the film.

Abstract translation: 提供耐蚀刻构件及其制造方法，以通过在室内形成耐腐蚀喷涂膜来防止室被清洁气体或等离子体蚀刻。 一种成膜设备（10）包括具有下室和上室（11a，11b）的室（11）。 上腔室设置在下腔室。 下部和上部腔室彼此集成。 上室的直径小于下室的直径。 下室由导体（12）制成，其表面被阳极氧化。 上室由基材（13）和薄膜（14）构成。 基材由陶瓷制成。 膜包含形成在膜的内壁上的3a族元素。

公开(公告)号：KR1020080071963A

公开(公告)日：2008-08-05

申请号：KR1020080068351

申请日：2008-07-14

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠키하야시

IPC: H01L21/205

CPC classification number: C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

Abstract: A processing apparatus is provided to extend a lifetime of a chamber by preventing the chamber from being eroded due to a plasma or cleaning gas. A processing apparatus includes a process container(11) and a process unit(10). A substrate to be processed is contained in the process container. The process unit performs a plasma treatment on the substrate in the process container. A film(14) is formed on an exposed substrate in the process container by using 3a-group element chemicals in a periodic table. A thickness of the film is greater than 50 mum and a breakdown voltage of the film is higher than 4 kV. An etching amount of the film due to a plasma containing mixture gas of CF4, Ar and O2 is smaller than that of alumina.

Abstract translation: 提供了一种处理装置，以通过防止由于等离子体或清洁气体侵蚀室而延长室的寿命。 处理装置包括处理容器（11）和处理单元（10）。 待处理的基材包含在处理容器中。 处理单元对处理容器中的基板进行等离子体处理。 通过使用周期表中的3a族元素化学品，在处理容器中的暴露的基材上形成膜（14）。 膜的厚度大于50μm，膜的击穿电压高于4kV。 由于含有CF 4，Ar和O 2的混合气体的等离子体的膜的蚀刻量小于氧化铝。

公开(公告)号：KR1020070090863A

公开(公告)日：2007-09-06

申请号：KR1020070081242

申请日：2007-08-13

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오츠키하야시

IPC: H01L21/205

CPC classification number: C23C16/45565 ,  C23C4/11 ,  C23C16/4404 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32495 ,  Y10T428/26

Abstract: An etch-resistant member is provided to prevent corrosion of a chamber by plasma or cleaning gas by forming a spray layer on the inner wall of the chamber wherein the spray layer is composed of Al2O3/Y2O3 in a weight ratio of 0.5 and has high etch-resistance. An etch-resistant member is used in a process apparatus for processing a substrate, including a base member and a layer including a compound belonging to 3a-group of a periodic table. The layer is formed on the base member by a spray method, having a thickness of 50 mum or more and a breakdown voltage of 4 KV or higher. The layer formed on the base member can include Al2O3 additionally.

Abstract translation: 提供耐蚀刻构件以通过在室的内壁上形成喷涂层来防止等离子体或清洁气体对室的腐蚀，其中喷射层由重量比为0.5的Al 2 O 3 / Y 2 O 3构成并且具有高蚀刻 -抵抗性。 在用于处理衬底的处理装置中使用耐蚀刻构件，其包括基底构件和包含属于周期表的3a族的化合物的层。 该层通过喷涂法在基材上形成，厚度为50μm以上，击穿电压为4KV以上。 形成在基体上的层可以另外包含Al 2 O 3。