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公开(公告)号：KR1020060110480A
公开(公告)日：2006-10-25
申请号：KR1020050032756
申请日：2005-04-20
Applicant: 삼성전자주식회사
IPC: H01L21/027
Abstract: A method for manufacturing an EUVL(Extreme Ultra-Violet Lithography) alternating phase shift mask is provided to decrease reflectivity in a non-phase shift region when EUV light irradiated to a phase shift mask by physically changing a structure of a reflecting layer in the non-phase shift region. A substrate(100) is prepared to have reflecting layers(112,116), multi layering structure, where heterogeneous materials are layered in turn many times. A shielding layer is formed on the reflecting layers on the substrate. The reflecting layers include first and second reflecting layers. An etch stop layer is disposed between the first and second reflecting layers. A photoresist pattern is formed on the shielding layer to expose part thereof. Anisotropic dry etching is performed on the shielding layer by using the first photoresist pattern as an etching mask to form a shielding layer pattern(120a). The first photoresist pattern is removed. As the result, a reflecting region(100a) exposed through the shielding layer pattern and a non-reflecting region(100b) covered by the shielding layer pattern are defined on the first and second reflecting layers on the substrate.
Abstract translation: 提供了一种用于制造EUVL（Extreme Ultra-Violet Lithography）交变相移掩模的方法，用于通过物理地改变非反相层中的反射层的结构来减少EUV光照射到相移掩模时的非相移区域中的反射率 相移区。 制备基板（100）具有反射层（112,116），多层结构，其中异质材料依次层叠多次。 在基板上的反射层上形成屏蔽层。 反射层包括第一和第二反射层。 蚀刻停止层设置在第一和第二反射层之间。 在屏蔽层上形成光致抗蚀剂图案以暴露其部分。 通过使用第一光致抗蚀剂图案作为蚀刻掩模在屏蔽层上进行各向异性干蚀刻以形成屏蔽层图案（120a）。 去除第一光致抗蚀剂图案。 结果，在基板上的第一和第二反射层上限定了通过屏蔽层图案露出的反射区域（100a）和被屏蔽层图案覆盖的非反射区域（100b）。
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公开(公告)号：KR101703745B1
公开(公告)日：2017-02-08
申请号：KR1020100129997
申请日：2010-12-17
Applicant: 삼성전자주식회사
IPC: H01L21/027 , G03F1/68 , G03F1/76
CPC classification number: G03F1/70
Abstract: 본발명은, 기판상에원하는패턴을정확하게전사할수 있는캘리브레이션패턴을이용한포토마스크형성방법을제공한다. 본발명의일실시예에따른포토마스크형성방법은, 제1 설계치수를각각가지는 1차원캘리브레이션설계패턴들및 제2 설계치수를각각가지는 2차원캘리브레이션설계패턴들을제공하는단계; 1차원캘리브레이션설계패턴들로부터 1차원캘리브레이션측정패턴들을취득하고, 2차원캘리브레이션설계패턴들로부터 2차원캘리브레이션측정패턴들을취득하는단계; 1차원캘리브레이션측정패턴들의제1 측정치수들을취득하고, 2차원캘리브레이션측정패턴들의제2 측정치수들취득하는단계; 제1 측정치수들과제2 측정치수들사이의상관관계를수립하는단계; 및상관관계를이용하여, 주패턴의주 측정치수를제1 측정치수로변환하는단계;를포함한다.
Abstract translation: 使用可以将期望图案精确地转印到基板的校准图案形成光掩模的方法。 该方法包括提供一维校准设计图案，每个具有第一设计措施并提供每个具有第二设计措施的二维校准设计图案; 使用一维校准设计图案获得一维校准测量图案，并使用二维校准设计图案获得二维校准测量图案; 获得一维校准测量图案的第一测量度量，并获得二维校准测量图案的第二测量度量; 建立第一测量措施与第二测量措施之间的相关性; 以及使用所述相关性将主模式的主测量度量转换为所述第一测量测量值中的对应的一个。
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公开(公告)号：KR101652832B1
公开(公告)日：2016-09-01
申请号：KR1020100087667
申请日：2010-09-07
Applicant: 삼성전자주식회사
IPC: H01L21/027 , G03F1/68
Abstract: 본발명의일 실시예에따른반도체소자제조방법은최종패턴에기초하여복수의샷들을포함하는샷 세트를결정하는단계, 샷세트를서로인접하지않는복수의샷들을각각포함하는제1 및제2 패스샷 세트들로분류하는단계, 제1 패스샷 세트에대하여전자빔을레티클에방사하는제1 패스노출단계, 및제2 패스샷 세트에대하여전자빔을레티클에방사하는제2 패스노출단계를포함한다.
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公开(公告)号：KR101385753B1
公开(公告)日：2014-04-17
申请号：KR1020080108789
申请日：2008-11-04
Applicant: 삼성전자주식회사
IPC: H01L21/66 , H01L21/027
CPC classification number: G06T7/0006 , G03F1/86 , G03F7/70625 , G06T2207/30148
Abstract: 본 발명은 생산수율을 증대 또는 극대화할 수 있는 포토 마스크 패턴 크기의 균일성 검사방법을 개시한다. 그의 방법은 먼저 전자 현미경으로 포토 마스크를 정밀 계측하여 패턴 크기(CD)를 획득한다. 이후, 광학 현미경으로 포토 마스크를 고속 촬영하여 포토 마스크에 형성된 다수개의 패턴이 나타나는 계측 이미지를 획득한다. 그리고, 계측 이미지의 오픈 밀도가 낮으면, 상기 계측 이미지에서 패턴 영역만을 캡쳐링하여 패턴 크기에 따른 그레이 레벨을 산출하고, 추정치와 상관 계수를 구한다. 따라서, 오픈 밀도가 낮은 계측 이미지의 고속 계측에서 상기 패턴 크기의 균일성을 보다 정확하게 확인토록 할 수 있다.
포토(photo), 마스크(mask), 전자현미경(SEM), 이미지(image) 패턴(pattern)-
公开(公告)号：KR1020130085469A
公开(公告)日：2013-07-30
申请号：KR1020110128563
申请日：2011-12-02
Applicant: 삼성전자주식회사
IPC: G03F1/68
CPC classification number: G03F1/44
Abstract: PURPOSE: A manufacturing method of a photomask is provided to produce various patterns on an object while fixing the travel route of electronic beam in one direction because the object can relatively move by a workbench. CONSTITUTION: A manufacturing method of a photomask comprises the steps of: positioning a photosensitive film (40) on a substrate (50), and forming detecting patterns for faulty patterns containing the first pattern extending to the first direction on the substrate and the second pattern overlapped with the one end of the first pattern and extending to the second direction not to the first direction. The fist and the second patterns are made by diffracted electronic beam due to the same amplifier. The detection pattern is an L-shaped pattern.
Abstract translation: 目的：提供光掩模的制造方法，以在物体可以通过工作台相对移动的同时将电子束的行进路线固定在一个方向上，以在物体上产生各种图案。 构成：光掩模的制造方法包括以下步骤：将感光膜（40）定位在基板（50）上，并且形成用于在基板上延伸到第一方向的第一图案的错误图案的检测图案，并且第二图案 与第一图案的一端重叠并且不向第一方向延伸到第二方向。 由于相同的放大器，第一和第二图案由衍射电子束制成。 检测图案是L形图案。
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Patent Agency Ranking
公开(公告)号：KR1020080101278A
公开(公告)日：2008-11-21
申请号：KR1020070047830
申请日：2007-05-16
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: G03F1/84 , H01L21/0274
Abstract: A high speed measurement can be performed on the entire surface of a mask. A precise measurement can be performed on the mask in consideration of the optical effect of the mask. The method of measuring a mask is provided. A step is for designing a target mask layout for a pattern to be formed on a wafer(S100). A step is for extracting an effective mask layout by using the image for the target mask layout which is measured by using the aerial image test equipment which is the mask test equipment(S500). A step is for calculating an image on the wafer by inputting the extracted effective mask layout to the wafer simulation tool(S600). The optical effect by the mask can be inspected by comparing target mask layout with the effective mask layout, and the pattern with the image on the wafer.
Abstract translation: 可以在掩模的整个表面上进行高速测量。 考虑到掩模的光学效果，可以对掩模进行精确的测量。 提供了测量掩模的方法。 步骤是设计用于在晶片上形成的图案的目标掩模布局（S100）。 通过使用通过使用作为掩模测试设备的空中图像测试设备测量的目标掩模布局的图像来提取有效的掩模布局的步骤（S500）。 步骤是通过将提取的有效掩模布局输入到晶片模拟工具（S600）来计算晶片上的图像。 可以通过将目标掩模布局与有效掩模布局进行比较，以及晶片上图像的图案来检查掩模的光学效果。
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公开(公告)号：KR100735531B1
公开(公告)日：2007-07-04
申请号：KR1020060025811
申请日：2006-03-21
Applicant: 삼성전자주식회사
IPC: H01L21/027
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公开(公告)号：KR1020060109680A
公开(公告)日：2006-10-23
申请号：KR1020050031928
申请日：2005-04-18
Applicant: 삼성전자주식회사
IPC: H01L21/027
Abstract: A mask having an auxiliary pattern and a manufacturing method thereof are provided to form the auxiliary pattern having various transmissivity by controlling width and height. A shielding material and a mask material are formed on a substrate(30). The mask material is patterned to form a first mask pattern and a second mask pattern. The shielding material is etched by using the first mask pattern and the second mask pattern to form a first shielding pattern and a second shielding pattern. The second shielding pattern is etched in a certain width to form an auxiliary pattern(42). The first mask pattern is removed to form a main pattern(41). The first shielding pattern and the second shielding pattern include a MoSiON layer.
Abstract translation: 提供具有辅助图案的掩模及其制造方法，以通过控制宽度和高度来形成具有各种透射率的辅助图案。 在基板（30）上形成屏蔽材料和掩模材料。 图案化掩模材料以形成第一掩模图案和第二掩模图案。 通过使用第一掩模图案和第二掩模图案来蚀刻屏蔽材料以形成第一屏蔽图案和第二屏蔽图案。 以一定宽度蚀刻第二屏蔽图案以形成辅助图案（42）。 去除第一掩模图案以形成主图案（41）。 第一屏蔽图案和第二屏蔽图案包括MoSiON层。
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公开(公告)号：KR101435518B1
公开(公告)日：2014-08-29
申请号：KR1020080036208
申请日：2008-04-18
Applicant: 삼성전자주식회사
IPC: H01L21/027
Abstract: 글로벌한 균일도를 갖는 포토 마스크의 제조방법이 제공된다. 본 발명에 따른 제조 방법에 따르면, 포토 마스크를 제공한다. 상기 포토 마스크를 노광하여 에어리얼 이미지를 검출하여 상기 포토 마스크를 평가한다. 그리고, 상기 평가 결과에 따라서, 상기 에어리얼 이미지와 관련된 상기 포토 마스크의 광학 파라미터를 보정한다.
포토 마스크, 에어리얼 이미지, CD 균일도, 보정, 인텐서티(intensity)-
公开(公告)号：KR1020120081659A
公开(公告)日：2012-07-20
申请号：KR1020100129997
申请日：2010-12-17
Applicant: 삼성전자주식회사
IPC: H01L21/027 , G03F1/68 , G03F1/76
CPC classification number: G03F1/70 , H01L21/0274 , G03F1/68 , G03F1/76 , H01L21/0337
Abstract: PURPOSE: A photo-mask and a method for manufacturing the same are provided to precisely produce an MTT(Mean-To-Target) dimension and uniformity of a two-dimensional pattern at the same time by accurately transferring a desire pattern on a substrate. CONSTITUTION: One-dimensional calibration measured patterns are obtained from one-dimensional calibration design patterns and two-dimensional calibration measured patterns are obtained from two-dimensional calibration design patterns(S20). First measured dimensions of the one-dimensional calibration measured patterns are obtained and second measured dimensions of the two-dimensional calibration measured patterns are obtained(S30). A correlation between the first measured dimensions and the second measured dimensions is established(S40). A main measured dimension of a main pattern is changed into the first measured dimension by using the correlation(S50).
Abstract translation: 目的：提供一种光掩模及其制造方法，通过在基板上精确地传送期望图案，同时精确地产生二维图案的MTT（平均对目标）尺寸和均匀性。 构成：从一维校准设计图案获得一维校准测量图案，并且从二维校准设计图案获得二维校准测量图案（S20）。 获得一维校准测量图案的第一测量尺寸，并获得二维校准测量图案的第二测量尺寸（S30）。 建立第一测量尺寸与第二测量尺寸之间的相关性（S40）。 通过使用相关性将主图案的主要测量尺寸改变为第一测量尺寸（S50）。
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