公开(公告)号：KR1020120100232A

公开(公告)日：2012-09-12

申请号：KR1020110019001

申请日：2011-03-03

Applicant: 삼성전자주식회사

Inventor： 박두철 ,  장승혁 ,  김명선 ,  김원주 ,  정주환 ,  이승훈 ,  이광민 ,  고형수

IPC: G02B13/14 ,  G02B3/00 ,  G03F7/40 ,  G02B23/14 ,  G01B11/22

CPC classification number: G02B3/0018 ,  G02B3/0056 ,  G02B13/14 ,  G02B23/14 ,  G03F7/40 ,  G01B11/22 ,  G02B3/00 ,  G02B13/00 ,  H01L27/14

Abstract: PURPOSE: A micro lens, a depth sensor including the same, and a method for manufacturing the micro lens are provided to prevent the performance degradation of the depth lens. CONSTITUTION: Photo-resist for forming a micro lens(110) is formed on a substrate. The photo-resist is exposed in order to form a photo-resist pattern. The viscosity of the photo-resist is 150 to 250cp. The thickness of the photo-resist is 0.1 to 9.9micrometers. The diameter of the photo-resist is 10 to 99micrometers. A photoelectric conversion element(160) creates a photo charge in response to infrared rays condensed through micro lens. A processer calculates distance of an object according to a signal outputted from a depth sensor.

Abstract translation: 目的：提供微透镜，包括其的深度传感器和用于制造微透镜的方法，以防止深度透镜的性能下降。 构成：在基板上形成用于形成微透镜（110）的光致抗蚀剂。 曝光光致抗蚀剂以形成光刻胶图案。 光致抗蚀剂的粘度为150〜250cp。 光致抗蚀剂的厚度为0.1〜9.9微米。 光致抗蚀剂的直径为10至99微米。 光电转换元件（160）响应通过微透镜会聚的红外线产生光电荷。 处理器根据从深度传感器输出的信号计算物体的距离。

公开(公告)号：KR1020090110729A

公开(公告)日：2009-10-22

申请号：KR1020080036375

申请日：2008-04-18

Applicant: 삼성전자주식회사

Inventor： 노현필 ,  이덕형 ,  박두철

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643

Abstract: PURPOSE: A shared pixel type image sensor is provided to improve a coupling property of a transmitting device and a floating diffusion region by symmetrically arranging a local wiring in a transmitting device which shares a floating diffusion region. CONSTITUTION: A shared pixel type image sensor includes a floating diffusion region(FD), a first photoelectric conversion region(PD1), a second photoelectric conversion region(PD2), two transmitting devices(TG1,TG2), a drive device(DG), a first contact(C1), a second contact(C2), and a local wiring(L1). The floating diffusion region is formed inside the semiconductor substrate. Two transmitting devices transmit electric charge charged in the first photoelectric conversion region and the second photoelectric conversion region to the floating diffusion region. The first contact is formed on the floating diffusion region. The second contact is formed on the drive device.

Abstract translation: 目的：提供共享像素型图像传感器，通过在共享浮动扩散区域的发送装置中对称地布置局部布线来提高发送装置和浮动扩散区域的耦合特性。 构成：共享像素型图像传感器包括浮置扩散区域（FD），第一光电转换区域（PD1），第二光电转换区域（PD2），两个发送装置（TG1，TG2），驱动装置（DG） ，第一触点（C1），第二触点（C2）和局部布线（L1）。 浮动扩散区形成在半导体衬底的内部。 两个发送装置将在第一光电转换区域和第二光电转换区域中充电的电荷发送到浮动扩散区域。 第一触点形成在浮动扩散区上。 第二触点形成在驱动装置上。

公开(公告)号：KR1020080084475A

公开(公告)日：2008-09-19

申请号：KR1020070026276

申请日：2007-03-16

Applicant: 삼성전자주식회사

Inventor： 이종민 ,  신종철 ,  박두철 ,  구정훈 ,  임희룡

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/1463 ,  H01L27/14689

Abstract: An image sensor and a method of fabricating the same are provided to adjust thickness of each region freely by having regions with different concentrations through epitaxial growth. An image sensor comprises a bare substrate(101), an epitaxial layer(102), and charge collecting holes(111). The epitaxial layer is formed on the bare substrate, including a first impurity region of a first conductivity(102a) and a second impurity region of second conductivity(102b). The first impurity region is formed on the bare substrate. The second impurity region is formed on the first impurity region. The charge collecting holes are formed within the epitaxial layer and doped with third impurity of second conductivity. The charge collecting holes occupy the first and second impurity regions, and have a second conductivity as a whole. The first conductivity is a P type and the second conductivity an N type.

Abstract translation: 提供一种图像传感器及其制造方法，通过外延生长具有不同浓度的区域来自由调整每个区域的厚度。 图像传感器包括裸衬底（101），外延层（102）和电荷收集孔（111）。 外延层形成在裸基板上，包括第一导电性（102a）的第一杂质区和第二导电性（102b）的第二杂质区。 在裸基板上形成第一杂质区。 第二杂质区形成在第一杂质区上。 电荷收集孔形成在外延层内并掺杂有第二导电性的第三杂质。 电荷收集孔占据第一和第二杂质区，并且整体上具有第二导电性。 第一导电性为P型，第二导电性为N型。