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公开(公告)号：KR1020120052454A
公开(公告)日：2012-05-24
申请号：KR1020100113488
申请日：2010-11-15
Applicant: 삼성전자주식회사
CPC classification number: H01L27/101 , G11C17/14 , G11C17/18 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE: A semiconductor device including a fuse array and an operating method thereof are provided to omit an access operation of unnecessary information about an anti-fuse by implementing an anti-fuse with an array structure. CONSTITUTION: An anti-fuse array(1100) has a plurality of rows and columns. A first register unit(1400) receives fuse data from the anti-fuse array in parallel. A second register unit(1500) successively receives the fuse data from the first register unit at least one bit by one bit.
Abstract translation: 目的：提供一种包括熔丝阵列及其操作方法的半导体器件，通过实施具有阵列结构的反熔丝来省略关于抗熔丝的不必要的信息的访问操作。 构成：反熔丝阵列（1100）具有多个行和列。 第一寄存器单元（1400）并联地从反熔丝阵列接收熔丝数据。 第二寄存器单元（1500）至少一位一位地从第一寄存器单元连续地接收熔丝数据。
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12.发明公开
公开(公告)号：KR1020120020272A
公开(公告)日：2012-03-08
申请号：KR1020100083785
申请日：2010-08-30
Applicant: 삼성전자주식회사
IPC: H01L27/02 , H01L27/10 , H01L27/115 , H01L21/8247
CPC classification number: G11C11/405 , G11C17/16 , G11C17/165 , H01L27/101 , H01L29/1045 , H01L29/1083 , H01L29/66537 , H01L29/7835 , H01L23/5252
Abstract: PURPOSE: An anti-fuse memory cell, a manufacturing method thereof, a non-volatile memory apparatus including the same, and a memory apparatus which includes a repair function are provided to reduce impurity density of a drain region of a selection transistor, thereby effectively suppressing program interruptions generated during a program operation. CONSTITUTION: A selection transistor(1110a) and an anti-fuse(1120a) are arranged on the same substrate(1130). The selection transistor comprises a first gate(1111), a first gate insulating layer(1112), a first source region(1113), and a first drain region(1114). The first gate is connected to a read word line(WLR1). The anti-fuse comprises a second gate(1121), a second gate insulating layer(1122), a second area region(1123), and a second drain region(1124). The second gate is connected to a program word line(WLP1).
Abstract translation: 目的：提供一种反熔丝存储单元及其制造方法，包括该反熔丝存储单元的非易失性存储装置和包括修复功能的存储装置，以减少选择晶体管的漏区的杂质浓度，从而有效地 抑制程序运行期间产生的程序中断。 构成：选择晶体管（1110a）和反熔丝（1120a）布置在同一衬底（1130）上。 选择晶体管包括第一栅极（1111），第一栅极绝缘层（1112），第一源极区域（1113）和第一漏极区域（1114）。 第一个门连接到读字线（WLR1）。 反熔丝包括第二栅极（1121），第二栅极绝缘层（1122），第二区域区域（1123）和第二漏极区域（1124）。 第二个门连接到一个程序字线（WLP1）。
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公开(公告)号：KR1020110120044A
公开(公告)日：2011-11-03
申请号：KR1020100039538
申请日：2010-04-28
Applicant: 삼성전자주식회사
IPC: H01L23/62 , H01L21/336 , H01L29/78
CPC classification number: H01L23/5252 , G11C17/16 , G11C29/785 , H01L27/101 , H01L2924/0002 , H01L21/2253 , H01L29/78696 , H01L2924/00
Abstract: PURPOSE: An anti-fuse, an anti-fuse circuit including the same, and an anti-fuse manufacturing method are provided to improve a scattering property according to a destroyed position after destroying a gate oxidation film, thereby accurately performing an anti-fusing process. CONSTITUTION: A device isolation region(12) is arranged to an inward direction from the supper surface of a semiconductor substrate(11). A channel spreading region(14) is surrounded by the device isolation region. The channel spreading region is arranged with an ion injection method or chemical vapor deposition method. A gate oxidation film(15) is arranged in the upper part of the channel spreading region. A gate electrode(16) is arranged in order to cover the upper surface of the gate oxidation film.
Abstract translation: 目的：提供一种抗熔丝，包括该反熔丝的反熔丝电路和抗熔丝制造方法，以在破坏栅极氧化膜之后根据破坏位置改善散射特性，从而精确地进行抗熔融工艺 。 构成：器件隔离区域（12）从半导体衬底（11）的后表面向内部布置。 信道扩展区（14）被器件隔离区包围。 通过离子注入法或化学气相沉积法配置沟道扩散区。 栅极氧化膜（15）布置在沟道扩展区域的上部。 为了覆盖栅极氧化膜的上表面，布置有栅电极（16）。
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Patent Agency Ranking
公开(公告)号：KR100832846B1
公开(公告)日：2008-05-28
申请号：KR1020060112968
申请日：2006-11-15
Applicant: 삼성전자주식회사
CPC classification number: H04N5/235 , H04N5/2355
Abstract: 본 발명에 따른 W(White) 화소를 가지는 영상 촬상 소자의 영상 촬상 방법은: (a) W 화소들을 이용하여 복수번 영상을 촬상하는 단계; 및 (b) 상기 (a) 단계 이후, 상기 W 화소들을 제외한 화소들을 이용하여 영상을 촬상하는 단계를 포함한다.
W 화소, 멀티 촬상-
公开(公告)号：KR101752151B1
公开(公告)日：2017-06-30
申请号：KR1020100083211
申请日：2010-08-27
Applicant: 삼성전자주식회사
CPC classification number: H01L27/101 , G11C17/16 , G11C17/18 , H01L23/5252 , H01L2924/0002 , H01L2924/00
Abstract: 퓨즈회로는프로그램부및 센싱부를포함한다. 프로그램부는프로그램전압의서로다른레벨에서절연파괴되는적어도두 개의안티퓨즈소자들을구비하여, 프로그램신호에응답하여프로그램되고, 센싱인에이블신호에응답하여프로그램출력신호를출력한다. 센싱부는프로그램출력신호에기초하여프로그램여부를나타내는센싱출력신호를발생한다.
Abstract translation: 熔丝电路包括程序部分和感测部分。 程序单元，包括至少两个反熔丝元件被破坏从不同级别的编程电压，该程序的响应于节目信号中分离，响应于所述感测启用信号并输出该信号输出程序。 感测单元基于节目输出信号生成指示节目是否被编程的感测输出信号。
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公开(公告)号：KR1020130003333A
公开(公告)日：2013-01-09
申请号：KR1020110064611
申请日：2011-06-30
Applicant: 삼성전자주식회사
IPC: G11C29/04
CPC classification number: G11C29/027 , G11C29/789 , G11C29/808
Abstract: PURPOSE: A semiconductor memory device including a spare anti-fuse array and a method for repairing the antifuse are provided to minimize the increase of a chip area by not requiring an additional control circuit for driving the spare antifuse array. CONSTITUTION: Antifuses sharing an operation control circuit which performs a program operation or read operation with a unit of a first direction are arranged in an antifuse array(30). A spare antifuse array(40) shares a spare word line with a unit of a second direction cross the first direction. The spare antifuses sharing the operation control circuit with the unit of the first direction with are arranged in the spare antifuse array. The operation control circuit includes a program block logic(10) and a read block logic(20).
Abstract translation: 目的：提供包括备用反熔丝阵列和修补反熔丝的方法的半导体存储器件，以通过不需要用于驱动备用反熔丝阵列的附加控制电路来最小化芯片面积的增加。 构成：在反熔丝阵列（30）中配置有共享以第一方向为单位执行程序动作或读取动作的动作控制电路的防空部。 备用反熔丝阵列（40）共享具有与第一方向相交的第二方向的单位的备用字线。 以第一方向为单位的共用操作控制电路的备用反熔丝被布置在备用反熔丝阵列中。 操作控制电路包括程序块逻辑（10）和读块逻辑（20）。
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公开(公告)号：KR1020120019776A
公开(公告)日：2012-03-07
申请号：KR1020100083211
申请日：2010-08-27
Applicant: 삼성전자주식회사
CPC classification number: H01L27/101 , G11C17/16 , G11C17/18 , H01L23/5252 , H01L2924/0002 , G11C29/04 , G11C16/10 , G11C29/027 , H01L2924/00
Abstract: PURPOSE: A semiconductor memory apparatus, a manufacturing method thereof, a fuse circuit, and a fuse array including the same are provided to improve program characteristics by including two anti-fuse devices. CONSTITUTION: A fuse circuit comprises a program part(100) and a sensing part. The program part comprises two anti-fuse devices(200). The program part outputs a program output signal(PS) in response to a sense enabling signal and is programmed in response to a program signal. The anti-fuse devices are insulated and destroyed in different program voltage levels. The sensing part generates a sensing output signal which displays a state of a program based on the program output signal.
Abstract translation: 目的：提供一种半导体存储装置及其制造方法，熔丝电路和包括该半导体存储装置的熔丝阵列，以通过包括两个反熔丝装置来改善程序特性。 构成：熔丝电路包括程序部分（100）和检测部分。 程序部分包括两个反熔丝器件（200）。 程序部分响应于感测使能信号输出程序输出信号（PS），并且响应于程序信号被编程。 反熔丝器件在不同的程序电压电平下被绝缘和破坏。 感测部分产生感测输出信号，其基于节目输出信号显示节目的状态。
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公开(公告)号：KR100630193B1
公开(公告)日：2006-09-29
申请号：KR1020050021054
申请日：2005-03-14
Applicant: 삼성전자주식회사
Inventor： 박주섭
IPC: H04B1/38
CPC classification number: H04M1/0237
Abstract: 본 발명에 따른 슬라이딩 모듈은 탄성 수단의 탄성력으로 슬라이딩 타입 휴대용 단말기를 개폐시키는 구동력을 제공하면서, 슬라이딩 가이드와 슬라이딩 플레이트 각각에 가이드 돌기들을 형성하고, 그들에 간섭되는 슬라이더들을 이용하여 구동력의 방향을 전환시킴으로써 단말기의 반자동 개폐동작을 구현하게 되었다. 따라서, 사용자는 슬라이딩 타입 휴대용 단말기를 사용하는 것이 편리하게 되는 장점이 있다. 또한, 종래의 토션 스프링을 사용하는 슬라이딩 모듈과 비교할 때 그 폭을 줄일 수 있으므로, 단말기의 두께에 영향을 주지 않으면서, 단말기의 측면에 위치시킬 수 있으므로 다양한 형태의 슬라이딩 단말기를 구현하면서 반자동 개폐동작을 구현할 수 있게 되었다.
단말기, 슬라이딩, 압축 코일 스프링, 반자동
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