Abstract:
본 발명에 따른 감광성 폴리머는 하기 화학식의 펜타플루오르 메틸비닐 에테르 유도체 모노머를 포함하는 질량 평균 분자량이 3,000 ∼ 100,000인 감광성 폴리머이다.
식중, R은 알콕시 카르보닐, 알킬실란, 불소원자들이 치환 또는 비치환된 C 3 -C 20 의 알킬 카르보닐,불소원자들이 치환 또는 비치환된 C 3 -C 20 의 고리화 알킬카르보닐기 또는 불소원자들이 치환 또는 비치환된 벤조일기이다. 본 발명에 따른 감광성 폴리머는 펜타플루오르 메틸비닐 에테르 유도체 모노머가 (메타)아크릴산 모노머, (메타)아크릴레이트 모노머, 스티렌 모노머, 노르보넨 모노머, 테트라플루오르 에틸렌 모노머 및 무수 말레인산 모노머로 이루어진 그룹에서 선택된 적어도 하나의 모노머와 중합된 폴리머이다.
Abstract:
PURPOSE: A fluorine-containing photosensitive polymer, a resist composition containing the polymer and a method for forming a pattern by using the composition are provided, to improve transmittance at F2 excimer laser wavelength (157 nm). CONSTITUTION: The fluorine-containing photosensitive polymer comprises a trifluorovinyl derivative monomer represented by the formula 6 as a repeating unit, and has a weight average molecular weight of 3,000-100,000, wherein X is a fluorine-substituted or unsubstituted alkyl group of C1-C5; R is a primary, secondary and tertiary alkyl group of C1-C10, a tetrahydropyranyl group, tetrahydrofuranyl group or 1-ethoxyethyl group; and n is an integer of 1-5. The composition comprises 100 parts by weight of the photosensitive polymer; 1-15 parts by weight of a photoacid generator; and optionally 0.01-2.0 parts by weight of an organic base.
Abstract:
본 발명은 컨쥬게이티드 고분자 패턴 형성용 조성물 및 이를 이용한 패턴형성방법에 관한 것으로, 보다 상세하게는, 특정 구조의 전구체 고분자 및 광염기 발생제를 포함하는 컨쥬게이티드 고분자 패턴형성용 조성물 및 이를 이용한 패턴형성방법에 관한 것이다. 본 발명에 따른 조성물을 사용할 경우, 간편하고 효율적으로 컨쥬게이티드 고분자를 패턴화할 수 있으며, 상기 패턴화된 컨쥬게이티드 고분자는 메모리소자, 센서, 태양전지(solar cell), 저장 배터리(storage battery), 유기 EL 등의 유기전자소자에서 유용하게 이용될 수 있다.
Abstract:
본 발명은 투명 기판, 상기 투명 기판 상에 형성된 광촉매 화합물로 구성되는 광촉매층, 상기 광촉매층 위에 형성된 금속 메쉬층 및 상기 금속 메쉬층 위에 전도성 물질이 코팅되어 형성된 도전층을 포함하는 것을 특징으로 하는 태양전지용 투명 전극, 그의 제조방법 및 그를 포함하는 반도체 전극에 관한 것이다. 본 발명에서는 기존의 태양전지용 투명 전극 내에 저저항 금속 메쉬층을 복합화시킴으로써 투과도의 저하 없이 저저항 특성을 갖는 투명 전극의 제조가 가능하므로, 본 발명의 투명 전극을 채용하는 태양전지는 고효율 특성을 갖는다. 태양전지, 반도체 전극, 투명 전극, 광촉매층, 금속 메쉬층
Abstract:
PURPOSE: A siloxane-based resin and a method for forming a low dielectric pattern layer by using the resin are provided, to omit the processes for forming an insulating layer and a pattern for simplifying the process by using a siloxane-based resin acting as a low dielectric substance and a photoresist. CONSTITUTION: The siloxane-based resin is obtained by hydrolyzing and condensation polymerizing a silane compound represented by SiR1X2X2X3, a silane compound represented by SiR2X1X2X3, and/or a silane compound represented by X3X2X1Si-(R3)-SiX1X2X3 in an organic solvent in the presence of a catalyst and water, wherein R1 is an acid and heat-labile group-substituted alkylate group of C5-C10, cycloalkylate group or arylate group; R2 is H, an alkyl group of C1-C3, a cycloalkyl group of C3-C10 or an aryl group of C6-C15; R3 is an alkyl or oxyalkyl group of C1-C3, a cycloalkyl or oxycycloalkyl group of C3-C10, or an aryl or oxyaryl group of C6-C15; and X1, X2 and X3 are independently H, an alkyl group of C1-C3, an alkoxy group of C1-C4, or a halogen atom, and at least two among them are an alkoxy group of C1-C4 or a halogen atom.
Abstract translation:目的:提供硅氧烷类树脂和通过使用该树脂形成低电介质图案层的方法,以省略形成绝缘层的工艺和用于简化工艺的图案,其中使用硅氧烷类树脂作为 低介电物质和光致抗蚀剂。 构成:硅氧烷系树脂通过在有机溶剂中在有机溶剂中水解和缩合由SiR 1 X 2 X 2 X 3表示的硅烷化合物,SiR 2 X 1 X 2 X 3表示的硅烷化合物和/或由X3X2X1Si-(R3)-SiX1X2X3表示的硅烷化合物) 的催化剂和水,其中R1是C5-C10,环烷基化基团或芳基化物基团的酸和热不稳定基团取代的烷基化物基团; R2是H,C1-C3的烷基,C3-C10的环烷基或C6-C15的芳基; R3是C1-C3的烷基或烷氧基,C3-C10的环烷基或氧环烷基,或C6-C15的芳基或氧芳基; X1,X2和X3独立地为H,C1-C3的烷基,C1-C4的烷氧基或卤素原子,并且其中至少两个为C1-C4或卤素原子的烷氧基。
Abstract:
PURPOSE: A photosensitive polymer containing a fluorine-substituted cyclic monomer and a resist composition containing the composition are provided, which is transparent to the light less than 193 nm and shows a good adhesive property to a membrane, a large dry etching resistance and a good contrast characteristic. CONSTITUTION: The photosensitive polymer contains a fluorine-substituted cyclic monomer represented by the formula, wherein at least one between X and Z is a fluorocarbon of C1-C3; and Y is a fluorocarbon of C1-C3, O, S, NH, NCH3, Si(CH3)2, Si(C2H5)2, carbonyl, or ester group. The resist composition comprises the photosensitive polymer; 1-15 wt% of a photoacid generator; and optionally 0.01-2.0 wt% of an organic base. Preferably the photoacid generator is selected from the group consisting of a triarylsulfonium salt, a diarylodonium salt, a sulfonate and their mixtures; and the organic base is selected from the group consisting of triethylamine, triisobutylamine, triisooctylamine, triisodecylamine, diethanolamine and their mixtures.
Abstract:
PURPOSE: A coating structure and a forming method thereof are provided to improve durability and corrosion resistance of a coating layer and to improve the yield of a product by forming an aluminum oxide layer and a silicon dioxide layer between a coating target product and the coating layer. CONSTITUTION: A coating structure(100) comprises an aluminum oxide(Al2O3) layer, a silicon dioxide(SiO2) layer, and a coating composite layer. The aluminum oxide layer is formed to the surface of a product. The silicon dioxide layer is formed on the aluminum oxide layer. The coating composite layer is formed on the silicon dioxide layer. [Reference numerals] (AA) Coating composite layer; (BB) Silicon dioxide layer; (CC) Aluminum oxide layer; (DD) Product