公开(公告)号：KR1020030094493A

公开(公告)日：2003-12-12

申请号：KR1020020031450

申请日：2002-06-04

Applicant: 삼성전자주식회사

Inventor： 이태원 ,  하대오 ,  차상엽 ,  심경만 ,  이기석 ,  정이하

IPC: H01L21/68

Abstract: PURPOSE: A chuck for supporting a substrate is provided to be capable of preventing porosities from being generated inside of a predetermined layer and restraining the bubble phenomenon of a lower layer. CONSTITUTION: A chuck(100) for supporting a substrate is provided with a body part(110) for supporting the substrate, the first coating layer(120) made of the first ceramic, formed on the surface of the body part, and the second coating layer(130) formed at the upper portion of the first coating layer for contacting the substrate. At this time, a plurality of buffer layers(132) and ceramic layers(134), are alternately stacked with each other for forming the second coating layer. At the time, the buffer layer is made of conductive layer and the ceramic layer is made of the second ceramic. Preferably, a concave portion is formed at one side of the body part corresponding to the size of the substrate and the second coating layer is formed at the concave portion of the body part.

Abstract translation: 目的：提供用于支撑基板的卡盘，以能够防止在预定层内部产生孔隙，并抑制下层的气泡现象。 构成：用于支撑基板的卡盘（100）设置有用于支撑基板的主体部分（110），形成在主体部分的表面上的由第一陶瓷制成的第一涂层（120），第二涂层 形成在第一涂层的上部的用于接触基底的涂层（130）。 此时，多个缓冲层（132）和陶瓷层（134）彼此交替堆叠以形成第二涂层。 此时，缓冲层由导电层制成，陶瓷层由第二陶瓷制成。 优选地，在与所述基板的尺寸相对应的所述主体部分的一侧形成凹部，并且所述第二涂覆层形成在所述主体部分的凹部处。

公开(公告)号：KR1020030092888A

公开(公告)日：2003-12-06

申请号：KR1020020030728

申请日：2002-05-31

Applicant: 삼성전자주식회사

Inventor： 이태원 ,  심경만 ,  박유춘

IPC: H01L21/00

Abstract: PURPOSE: A coated member is provided to improve surface roughness and reduce damage to a member during a process for forming roughness by forming roughness on the member made of an inorganic ceramic material while using silicon carbide whose hardness is higher than that of the inorganic ceramic material. CONSTITUTION: Roughness(110) is formed on the member(100) composed of the first inorganic ceramic material. A coating layer(120) is coated on the member including the roughness, composed of an oxide compound. The second inorganic ceramic powder with hardness higher than that of the first inorganic ceramic material is injected to the surface of the member to form the roughness.

Abstract translation: 目的：提供一种涂覆构件，以在使用硬度高于无机陶瓷材料的碳化硅的同时，通过在由无机陶瓷材料制成的构件上形成粗糙度的粗糙化处理期间提高表面粗糙度并减少对构件的损伤 。 构成：在由第一无机陶瓷材料构成的构件（100）上形成粗糙度（110）。 在包括由氧化物化合物构成的粗糙度的构件上涂覆涂层（120）。 将具有比第一无机陶瓷材料高的硬度的第二无机陶瓷粉末注入到构件的表面以形成粗糙度。

公开(公告)号：KR100308200B1

公开(公告)日：2001-09-29

申请号：KR1019990031667

申请日：1999-08-02

Applicant: 삼성전자주식회사

Inventor： 심경만 ,  김진성

IPC: H01L21/60

CPC classification number: H01L2924/0002 ,  H01L2924/00

Abstract: 목적 : 본발명은실리콘캐소드의제작공정에서접착력을강화하고본딩공정에서흘러넘치는인듐의제거공정을생략할수 있는실리콘캐소드의반도체기판과그라파이트의접합방법을제공한다. 구성 : 실리콘기판에지그(Jig)를부착하는단계, 상기실리콘기판을진공스퍼터(Sputter)기에넣어 Ti 스퍼터링을실시하고, Ag 및 Sn을순차적으로진공증착하는실리콘기판의스퍼터링및 진공증착단계, 그라파이트에지그(Jig)를부착하는단계, 상기그라파이트의접착면을진공스퍼터를이용하여 Ti를스퍼터링하고, Ti와 Cu를함께스퍼터링하며, 다시 Cu만을스퍼터링한뒤, Ag 및 Sn을순차적으로진공증착하는그라파이트에스퍼터링및 진공증착단계, 그라파이트의요홈에와이어(Wire)형태의 In을감아넣는 In삽입단계, In을삽입한그라파이트를로(Furnace)에넣어 In은용융점이상의온도로가열하여충분히용융시킨뒤 그위에실리콘기판을얹어압착시키는접착단계로이루어진것이다. 효과 : 종래의제작공정중, 접착력강화를위한샌딩(Sanding) 공정을줄일수 있으며, 접착단계진행후 실시해야하는 In 제거공정을생략할수 있을뿐만아니라, 과도할경우불량처리함으로인한경제적및 공정상의막대한손실을막을수 있는효과가있다.

公开(公告)号：KR100265289B1

公开(公告)日：2000-09-15

申请号：KR1019980002382

申请日：1998-01-26

Applicant: 삼성전자주식회사

Inventor： 김진성 ,  이영구 ,  심경만 ,  최규상

IPC: H01J9/02 ,  H01J1/30

CPC classification number: H01J37/32009 ,  H01J9/14 ,  H01J37/32532

Abstract: PURPOSE: A method for manufacturing a cathode in a plasma etching device and a cathode thereby are provided to remove the remaining projections of a hole by using a potassium hydroxide. CONSTITUTION: A method for manufacturing a cathode in a plasma etching device and a cathode thereby comprise the steps of a hole forming process, a physical surface polishing process, and a chemical surface polishing process. The hole forming process enable a plurality of hole on a substrate in order to perform an inflow process of a gas to an etching chamber. The physical surface polishing process is to polish a surface of a silicon substrate by using a slurry. The chemical surface polishing process is to remove the remaining projections from an inner face and an outer face of the hole by using a potassium hydroxide.

Abstract translation: 目的：提供一种用于制造等离子体蚀刻装置中的阴极和阴极的方法，以通过使用氢氧化钾除去孔的剩余突起。 构成：在等离子体蚀刻装置和阴极中制造阴极的方法包括孔形成工序，物理表面抛光工艺和化学表面抛光工艺的步骤。 孔形成工序能够在基板上形成多个孔，以便进行气体到蚀刻室的流入处理。 物理表面抛光工艺是通过使用浆料来抛光硅衬底的表面。 化学表面抛光工艺是通过使用氢氧化钾从孔的内表面和外表面除去剩余的突起。