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公开(公告)号：KR1020160119380A
公开(公告)日：2016-10-13
申请号：KR1020150047578
申请日：2015-04-03
Applicant: 삼성전자주식회사
IPC: H01L21/677
CPC classification number: H01L21/67161 , H01L21/67276 , H01L21/67733 , H01L21/67736
Abstract: 본발명은기판제조장치, 기판제조방법, 및그를포함하는패브리케이션라인을개시한다. 그의장치는기판의제 1 단위공정을수행하는제 1 단위설비와, 상기기판의제 2 단위공정을수행하는제 2 단위설비와, 상기기판을수납하는캐리어를상기제 1 및제 2 단위설비들에제공하고, 상기제 1 및제 2 단위설비들사이를연결하는로드포트를포함한다.
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公开(公告)号：KR1020040102304A
公开(公告)日：2004-12-04
申请号：KR1020030033853
申请日：2003-05-27
Applicant: 삼성전자주식회사
IPC: H01L21/68
Abstract: PURPOSE: A method of manufacturing a semiconductor device and a semiconductor device manufacturing apparatus for performing the same are provided to reduce staying-period of a substrate in a reaction chamber and to utilize efficiently the reaction chamber by pre-heating the substrate. CONSTITUTION: A temperature of a substrate is changed from a first temperature to a second temperature(S10). The substrate with the second temperature is loaded in a reaction chamber(S20). A predetermined process is performed on the substrate(S30). The temperature changing process is performed in a transfer chamber or a pre-heating chamber.
Abstract translation: 目的：提供一种制造半导体器件的方法和用于执行该半导体器件的半导体器件制造设备，以减少反应室中的衬底的停留时间并且通过预热衬底来有效地利用反应室。 构成：将衬底的温度从第一温度改变到第二温度（S10）。 将具有第二温度的基板装入反应室（S20）。 在基板上进行规定的工序（S30）。 温度变化过程在传送室或预热室中进行。
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公开(公告)号：KR100572325B1
公开(公告)日：2006-04-19
申请号：KR1020030092634
申请日：2003-12-17
Applicant: 삼성전자주식회사
IPC: H01L21/265
CPC classification number: H01J37/3171 , H01J37/304 , H01J2237/0044
Abstract: 본 발명은 이온 주입 장치 및 이를 이용한 이온 주입 방법을 개시한다. 개시된 본 발명의 이온 주입 장치는, 회전 디스크를 내장하고 밀폐된 공간을 정의하는 디스크 챔버에 고정 설치되어 상기 회전 디스크에 마운팅되는 웨이퍼의 표면과 근접 대향하여 웨이퍼 표면의 대전 상태를 읽는 전하 감지기를 포함하는 것을 특징으로 한다. 개시된 본 발명의 이온 주입 방법은, 양이온을 생성시키는 단계와; 상기 양이온에 전자를 제공하여 상기 양이온을 중성화하는 단계와; 상기 중성화된 입자를 회전 디스크에 마운팅된 웨이퍼에 주입시키는 단계와; 상기 웨이퍼의 표면 전하 상태를 감지하는 단계와; 상기 감지 결과 상기 웨이퍼의 표면 전하 상태가 중성 상태가 아니면 상기 웨이퍼의 표면 전하 상태를 중성화되도록 제어하는 단계를 포함하는 것을 특징으로 한다. 이에 따르면, 전하 감지기는 이온 빔에 의한 증착으로부터 자유롭게 되어 이온 빔 증착으로 인한 노이즈 증가를 방지할 수 있다. 따라서, 신호/노이즈 비가 향상되어 이온 주입의 신뢰성이 확보되는 효과가 있다.
Abstract translation: 本发明公开了一种离子注入装置以及使用该离子注入装置的离子注入方法。 本发明的所公开的离子注入装置，被牢固地固定到盘室，其包含一个旋转盘，并限定一个封闭的空间，电荷检测器来读取晶片表面的带电状态朝靠近晶片的表面将被安装在旋转圆盘 而且，其特征在于。 所公开的本发明的离子注入方法包括：产生阳离子; 向阳离子提供电子以中和阳离子; 将中和的颗粒注入安装在旋转盘上的晶片上; 感测晶片的表面电荷状态; 并且如果晶片的表面电荷状态由于检测而不是中性状态，则控制晶片的表面电荷状态为中性。 据此，电荷检测器不会被离子束沉积，并且可以防止由于离子束沉积而导致的噪声增加。 因此，具有提高信噪比的效果，确保离子注入的可靠性。
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公开(公告)号：KR1020040093534A
公开(公告)日：2004-11-06
申请号：KR1020030027436
申请日：2003-04-30
Applicant: 삼성전자주식회사
IPC: H01L21/205
Abstract: PURPOSE: A process gas supply apparatus of CVD(Chemical Vapor Deposition) equipment using high density plasma is provided to distribute uniformly process gas on the upper surface of a wafer by improving the structure of a supply nozzle. CONSTITUTION: A process gas supply apparatus includes a plurality of supply nozzles. The supply nozzle for spraying process gas to the center of a wafer includes a body part and a curve part. The body part(24a) is formed into a pipe shape. The curve part(24b) is prolonged from an end of the body part. The angle between the curve part and a length direction of the body part is in the range of 30 to 80 degrees.
Abstract translation: 目的：提供使用高密度等离子体的CVD（化学气相沉积）设备的工艺气体供应装置，通过改进供应喷嘴的结构来均匀地分布在晶片的上表面上的工艺气体。 构成：工艺气体供给装置包括多个供给喷嘴。 用于将处理气体喷射到晶片中心的供应喷嘴包括主体部分和曲线部分。 主体部（24a）形成为管状。 弯曲部分（24b）从主体部分的端部延伸。 曲线部分与身体部位的长度方向之间的角度在30至80度的范围内。
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公开(公告)号：KR1020040103220A
公开(公告)日：2004-12-08
申请号：KR1020030035153
申请日：2003-05-31
Applicant: 삼성전자주식회사
IPC: H01L21/68
Abstract: PURPOSE: A chuck fir supporting semiconductor substrate to supply uniformly a cooling gas to a semiconductor substrate is provided to improve uniformity of layers or patterns by maintaining uniformly a temperature of a semiconductor substrate. CONSTITUTION: A ceramic plate(120) includes a flowing path to provide a gas for controlling a temperature of a semiconductor substrate to a bottom face of the semiconductor substrate. The semiconductor substrate is loaded on an upper surface of the ceramic substrate. A gas distributor(250) is installed in the inside of the flowing path in order to form a space for buffering the gas. A plurality of through-holes are formed on the bottom face of the semiconductor substrate in order to discharge uniformly the gas. The ceramic plate is adhered to a body.
Abstract translation: 目的：提供一种用于向半导体衬底均匀供应冷却气体的卡盘冷杉支撑半导体衬底，以通过均匀地维持半导体衬底的温度来改善层或图案的均匀性。 构成：陶瓷板（120）包括流动路径以提供用于将半导体衬底的温度控制到半导体衬底的底面的气体。 半导体衬底被装载在陶瓷衬底的上表面上。 气流分配器（250）安装在流动通道的内部，以便形成用于缓冲气体的空间。 为了均匀地排出气体，在半导体基板的底面上形成有多个贯通孔。 陶瓷板粘附在一体上。
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Patent Agency Ranking
公开(公告)号：KR1020060127599A
公开(公告)日：2006-12-13
申请号：KR1020050048793
申请日：2005-06-08
Applicant: 삼성전자주식회사
IPC: H01L21/205
CPC classification number: C23C16/4412 , C23C16/4585 , H01L21/67017 , H01L21/68785 , H01L21/68792
Abstract: A substrate processor is provided to support a substrate and exhaust process gas using a simple structure. A process chamber(10) defines a reaction space(11). A discharge port(12) is formed at a lower portion of the process chamber. A substrate support member includes a positioning portion(31) and a support shaft(32). The positioning portion is positioned inside the process space. The support shaft the discharge port. A housing(40) encloses the support shaft exposed to an outside of the process chamber. A vertical driver drives the support shaft up and down. A rotation driver rotates the support shaft.
Abstract translation: 提供基板处理器以使用简单的结构来支撑基板和排气处理气体。 处理室（10）限定反应空间（11）。 排出口（12）形成在处理室的下部。 基板支撑构件包括定位部分（31）和支撑轴（32）。 定位部分位于处理空间内。 支撑轴排出口。 壳体（40）包围暴露于处理室外部的支撑轴。 垂直驱动器上下驱动支撑轴。 旋转驱动器旋转支撑轴。
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公开(公告)号：KR1020050060901A
公开(公告)日：2005-06-22
申请号：KR1020030092634
申请日：2003-12-17
Applicant: 삼성전자주식회사
IPC: H01L21/265
CPC classification number: H01J37/3171 , H01J37/304 , H01J2237/0044
Abstract: 본 발명은 이온 주입 장치 및 이를 이용한 이온 주입 방법을 개시한다. 개시된 본 발명의 이온 주입 장치는, 회전 디스크를 내장하고 밀폐된 공간을 정의하는 디스크 챔버에 고정 설치되어 상기 회전 디스크에 마운팅되는 웨이퍼의 표면과 근접 대향하여 웨이퍼 표면의 대전 상태를 읽는 전하 감지기를 포함하는 것을 특징으로 한다. 개시된 본 발명의 이온 주입 방법은, 양이온을 생성시키는 단계와; 상기 양이온에 전자를 제공하여 상기 양이온을 중성화하는 단계와; 상기 중성화된 입자를 회전 디스크에 마운팅된 웨이퍼에 주입시키는 단계와; 상기 웨이퍼의 표면 전하 상태를 감지하는 단계와; 상기 감지 결과 상기 웨이퍼의 표면 전하 상태가 중성 상태가 아니면 상기 웨이퍼의 표면 전하 상태를 중성화되도록 제어하는 단계를 포함하는 것을 특징으로 한다. 이에 따르면, 전하 감지기는 이온 빔에 의한 증착으로부터 자유롭게 되어 이온 빔 증착으로 인한 노이즈 증가를 방지할 수 있다. 따라서, 신호/노이즈 비가 향상되어 이온 주입의 신뢰성이 확보되는 효과가 있다.
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公开(公告)号：KR1020030094493A
公开(公告)日：2003-12-12
申请号：KR1020020031450
申请日：2002-06-04
Applicant: 삼성전자주식회사
IPC: H01L21/68
Abstract: PURPOSE: A chuck for supporting a substrate is provided to be capable of preventing porosities from being generated inside of a predetermined layer and restraining the bubble phenomenon of a lower layer. CONSTITUTION: A chuck(100) for supporting a substrate is provided with a body part(110) for supporting the substrate, the first coating layer(120) made of the first ceramic, formed on the surface of the body part, and the second coating layer(130) formed at the upper portion of the first coating layer for contacting the substrate. At this time, a plurality of buffer layers(132) and ceramic layers(134), are alternately stacked with each other for forming the second coating layer. At the time, the buffer layer is made of conductive layer and the ceramic layer is made of the second ceramic. Preferably, a concave portion is formed at one side of the body part corresponding to the size of the substrate and the second coating layer is formed at the concave portion of the body part.
Abstract translation: 目的：提供用于支撑基板的卡盘，以能够防止在预定层内部产生孔隙，并抑制下层的气泡现象。 构成：用于支撑基板的卡盘（100）设置有用于支撑基板的主体部分（110），形成在主体部分的表面上的由第一陶瓷制成的第一涂层（120），第二涂层 形成在第一涂层的上部的用于接触基底的涂层（130）。 此时，多个缓冲层（132）和陶瓷层（134）彼此交替堆叠以形成第二涂层。 此时，缓冲层由导电层制成，陶瓷层由第二陶瓷制成。 优选地，在与所述基板的尺寸相对应的所述主体部分的一侧形成凹部，并且所述第二涂覆层形成在所述主体部分的凹部处。
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公开(公告)号：KR1020030069234A
公开(公告)日：2003-08-27
申请号：KR1020020008612
申请日：2002-02-19
Applicant: 삼성전자주식회사
IPC: H01L21/68
Abstract: PURPOSE: A wafer receiving receptacle is provided to easily check the receiving position and receiving state of wafers within a short interval of time without using an additional driving apparatus by providing a wafer receiving receptacle including optical fiber. CONSTITUTION: Slot guides(106) having slots in which the wafers(900) are received are formed on the inner side surface of a receptacle(102), confronting each other. A plurality of light emitting units supply the first lights to the upper surfaces of the wafers, respectively. A plurality of light receiving units detect the first lights, respectively. A wafer detecting unit detects whether the wafers are received according to the second lights detected by the light receiving units, installed in the slot guides. The wafer receiving receptacle is formed on the lower surface of the receptacle, connecting a light source for supplying the first lights with the light receiving units. A connector connects an external apparatus with the light receiving units such that the external apparatus determines whether the wafers are received according to the second lights detected by the light receiving units.
Abstract translation: 目的：提供晶片接收插座，以通过提供包括光纤的晶片接收插座，而不使用额外的驱动装置，在短时间内容易地检查晶片的接收位置和接收状态。 构成：在接收器（102）的内侧表面上形成具有槽（109）的狭槽的狭槽导向件（106），彼此面对。 多个发光单元分别将第一光提供到晶片的上表面。 多个光接收单元分别检测第一灯。 晶片检测单元根据由安装在槽导轨中的光接收单元检测到的第二光来检测晶片是否被接收。 晶片接收容座形成在插座的下表面上，连接用于将第一光源供应的光源与光接收单元。 连接器将外部设备与光接收单元连接，使得外部设备根据由光接收单元检测到的第二光来确定晶片是否被接收。
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公开(公告)号：KR1020040046207A
公开(公告)日：2004-06-05
申请号：KR1020020074046
申请日：2002-11-26
Applicant: 삼성전자주식회사
IPC: H01L21/68
Abstract: PURPOSE: A lifting apparatus is provided to prevent lifting error by stably fixing a lift pin to a plate using a fixing part. CONSTITUTION: A lifting apparatus is provided with a lift pin(140) for loading and unloading a semiconductor substrate along a through hole(120) of a substrate support part(100), a plate(160) located at the lower portion of the substrate support part for vertically supporting the lift pin and moving the lift pin up and down by using a vertical driving force, and a fixing part for fixing the lift pin on the upper surface of the plate in order to prevent the lift pin from being shaken due to the vertical motion of the lift pin and the plate. Preferably, the fixing part includes a protrusion protruded from the lower lateral portion of the lift pin and a storing groove formed on the upper surface of the plate for fixing the lift pin to the plate.
Abstract translation: 目的：提供一种提升装置，通过使用固定部将升降销稳固地固定在板上来防止提升错误。 构成：提升装置设置有用于沿着衬底支撑部分（100）的通孔（120）装载和卸载半导体衬底的升降销（140），位于衬底的下部的板（160） 支撑部件，用于垂直支撑提升销，并使用垂直驱动力上下移动提升销;以及固定部分，用于将升降销固定在板的上表面上，以防止升降销因为振动 到升降销和板的垂直运动。 优选地，固定部分包括从提升销的下侧部分突出的突起和形成在板的上表面上的用于将提升销固定到板的存储槽。
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