公开(公告)号：KR1020000013324A

公开(公告)日：2000-03-06

申请号：KR1019980032134

申请日：1998-08-07

Applicant: 삼성전자주식회사

Inventor： 하대오

IPC: H01L21/20

Abstract: PURPOSE: The uniformity of a CVA(Chemical Vapor Deposition) is improved during the process which follows the exchange of an injector. CONSTITUTION: A space bar (52) or a screw(56) is interposed between the flange(50a) of an injector bent assembly(28) and a muffle frame(54) for the injector bent assembly's (58) keeping horizontally when the injector bent assembly(58) is united with the muffle frame(54).

Abstract translation: 目的：CVA（化学气相沉积）的均匀性在注射器更换过程中得到改善。 构成：在喷射器弯曲组件（28）的凸缘（50a）和用于喷射器弯曲组件（58）的马弗炉架（54）之间插入空间杆（52）或螺钉（56），当喷射器 弯曲组件（58）与马弗炉架（54）结合。

公开(公告)号：KR1020030094493A

公开(公告)日：2003-12-12

申请号：KR1020020031450

申请日：2002-06-04

Applicant: 삼성전자주식회사

Inventor： 이태원 ,  하대오 ,  차상엽 ,  심경만 ,  이기석 ,  정이하

IPC: H01L21/68

Abstract: PURPOSE: A chuck for supporting a substrate is provided to be capable of preventing porosities from being generated inside of a predetermined layer and restraining the bubble phenomenon of a lower layer. CONSTITUTION: A chuck(100) for supporting a substrate is provided with a body part(110) for supporting the substrate, the first coating layer(120) made of the first ceramic, formed on the surface of the body part, and the second coating layer(130) formed at the upper portion of the first coating layer for contacting the substrate. At this time, a plurality of buffer layers(132) and ceramic layers(134), are alternately stacked with each other for forming the second coating layer. At the time, the buffer layer is made of conductive layer and the ceramic layer is made of the second ceramic. Preferably, a concave portion is formed at one side of the body part corresponding to the size of the substrate and the second coating layer is formed at the concave portion of the body part.

Abstract translation: 目的：提供用于支撑基板的卡盘，以能够防止在预定层内部产生孔隙，并抑制下层的气泡现象。 构成：用于支撑基板的卡盘（100）设置有用于支撑基板的主体部分（110），形成在主体部分的表面上的由第一陶瓷制成的第一涂层（120），第二涂层 形成在第一涂层的上部的用于接触基底的涂层（130）。 此时，多个缓冲层（132）和陶瓷层（134）彼此交替堆叠以形成第二涂层。 此时，缓冲层由导电层制成，陶瓷层由第二陶瓷制成。 优选地，在与所述基板的尺寸相对应的所述主体部分的一侧形成凹部，并且所述第二涂覆层形成在所述主体部分的凹部处。

公开(公告)号：KR1020020077591A

公开(公告)日：2002-10-12

申请号：KR1020010017352

申请日：2001-04-02

Applicant: 삼성전자주식회사

Inventor： 김준호 ,  하대오 ,  장동현

IPC: H01R12/26

Abstract: PURPOSE: A device for fixing a flat cable connector is provided to improve the structure of a flat cable connector fixing block to stably connect the flat cable, thereby preventing a machine from being erroneously operated. CONSTITUTION: A device for fixing a flat cable connector includes a fixing block(40) composed of a pair of flat cable connectors(31a,31b) and upper and lower bodies(43,41). The pair of flat cable connectors connect a plurality of flat cables(21a,21b). The pair of flat cable connectors are inserted into the inside of the upper and lower bodies to be fixed thereto. The length of at least one end of the fixing block is extended by a predetermined distance to support the flat cables so as to reduce fluctuation of the flat cables. Both ends of the upper and lower bodies are rounded.

Abstract translation: 目的：提供一种用于固定扁平电缆连接器的装置，以改善扁平电缆连接器固定块的结构，以稳定连接扁平电缆，从而防止机器误操作。 构成：用于固定扁平电缆连接器的装置包括由一对扁平电缆连接器（31a，31b）和上部主体（43,41）组成的固定块（40）。 一对扁平电缆连接器连接多根扁平电缆（21a，21b）。 一对扁平电缆连接器插入到上部和下部主体的内部以固定到其上。 固定块的至少一端的长度延伸预定距离以支撑扁平电缆，以减少扁平电缆的波动。 上身和下身的两端都是圆形的。

公开(公告)号：KR100263901B1

公开(公告)日：2000-08-16

申请号：KR1019970052639

申请日：1997-10-14

Applicant: 삼성전자주식회사

Inventor： 임용균 ,  하대오

IPC: H01L27/06

CPC classification number: H01L28/84 ,  H01L21/28525 ,  H01L21/28562 ,  H01L27/1085

Abstract: PURPOSE: An apparatus is provided to fabricate a semiconductor device proper for fabricating an HSG(Hemi Spherical Grain)-polycrystalline silicon film, and a method is provided to fabricate the HSG-polycrystalline silicon film and a method is provided to fabricate a capacitor including the HSG-polycrystalline silicon film as an electrode. CONSTITUTION: A gate(200) is formed between a transfer chamber(110) and a process chamber(120) to separate both chambers and to be used as a wafer loading/unloading path. A heating block(210) is installed is installed in the process chamber, and a wafer supporting bar(220) is formed on the heating block. And, a jacket(230) is formed on a surface of the process chamber to maintain a temperature of the process chamber constantly during the process. A heater of the heating block is constituted with an internal heater(212) and an external heater(214) to maintain the constant temperature of the wafer efficiently. The wafer supporting bar on the heating block moves to a wafer loading/unloading position(250), a standby position(252) and a process proceeding position(254) according to the movement of a chuck(240). The chuck is moved by moving a chuck supporting bar(244) up and down along a sliding cylinder(242). The distance ratio between A and B is set above 0.63:1 and below 0.8:1 for a uniform process. A is the distance from the wafer loading/unloading position to the standby position, and B is the distance from the wafer loading/unloading position to the process proceeding position.

Abstract translation: 目的：提供一种用于制造适用于制造HSG（半球形晶粒） - 多晶硅膜的半导体器件的设备，并且提供了制造HSG-多晶硅膜的方法，并且提供了一种制造包括 HSG多晶硅膜作为电极。 构成：在传送室（110）和处理室（120）之间形成一个门（200），以分离两个室并用作晶片装载/卸载路径。 安装加热块（210），并且在加热块上形成晶片支撑杆（220）。 并且，在处理室的表面上形成夹套（230），以在处理过程中恒定地维持处理室的温度。 加热块的加热器由内部加热器（212）和外部加热器（214）构成，以有效地保持晶片的恒定温度。 加热块上的晶片支撑杆根据卡盘（240）的移动移动到晶片装载/卸载位置（250），待机位置（252）和过程进行位置（254）。 通过沿滑动气缸（242）上下移动卡盘支撑杆（244）来移动卡盘。 对于均匀的过程，A和B之间的距离比设定在0.63:1以上且低于0.8:1。 A是从晶片装载/卸载位置到待机位置的距离，B是从晶片装载/卸载位置到过程进行位置的距离。

公开(公告)号：KR1019990031802A

公开(公告)日：1999-05-06

申请号：KR1019970052639

申请日：1997-10-14

Applicant: 삼성전자주식회사

Inventor： 임용균 ,  하대오

IPC: H01L27/06

Abstract: 반도체 디바이스 제조 장치, 이를 이용한 HSG-다결정 실리콘막의 제조 방법 및 HSG-다결정 실리콘막을 전극으로 포함하는 커패시터의 제조 방법에 대해 제공한다. 본 발명에 따른 반도체 디바이스 제조 장치내에서는 웨이퍼가 놓여지는 웨이퍼 지지대가 세팅되는 위치가 웨이퍼 로딩/언로딩 위치, 대기 위치 및 공정 진행 위치로 구분되어 있으며, 상기 장치의 바닥면으로부터 상면쪽으로 상기 웨이퍼 로딩/언로딩 위치, 상기 대기 위치 및 상기 공정 진행 위치의 순서로 차례대로 구분되어 있다.

公开(公告)号：KR1019970063564A

公开(公告)日：1997-09-12

申请号：KR1019960003092

申请日：1996-02-08

Applicant: 삼성전자주식회사

Inventor： 하대오

IPC: H01L21/31

Abstract: 본 발명은 다층배선 구조에서 층간 절연막을 형성하는데 있어서, 고농도의 BPSG막 위에 다시 보호막을 형성함으로써 BPSG 증착직후에 발생하는 산(acid)에 의한 결함을 방지하면서 저온 리플로우 공정을 가능하게 하는데 그 목적이 있다.
이를 위한 본 발명은 다층배선 구조의 층간 절연막으로서 BPSG막을 증착하고 그 위에 다시 저농도의 BPSG, PSG 또는 USG(Undopedsilicata Glass)를 이용하여 BPSG막의 두께보다 얇게 캡층을 형성하는 것을 특징으로 한다.
이와 같이 구성된 본 발명에 의하면 다층배선 구조에서 BPSG막 위에 캡층을 형성함으로써, 층간 절연막으로 고농도의 BPSG만을 사용했을 때 산에 의해 막 표면에서 발생할 수 있는 결함발생요인을 제거하여 불량률을 최소화시키면서, 또한 저온 리플로우 공정을 가능하게 하여 이에 따를 제품의 신뢰성과 생산성의 향상을 기대할 수 있다.