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公开(公告)号：KR101886750B1
公开(公告)日：2018-08-13
申请号：KR1020110095814
申请日：2011-09-22
Applicant: 삼성전자주식회사 , 주식회사 동진쎄미켐
CPC classification number: G03F7/168 , C11D11/0047
Abstract: 본발명은알킬락테이트, 시클로헥사논, 및알킬아세테이트를포함하고, 상기알킬아세테이트의알킬치환체는탄소수 1 내지 5의비에테르계알킬기인 RRC (reduced resist coating) 공정용씨너조성물을제공한다. 본발명개념에따른 RRC 공정용씨너조성물을이용하면, 적은양의포토레지스트로도높은균일도로기판을불량없이도포할수 있어공정코스트를절감할수 있는장점이있다.
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公开(公告)号：KR1020150111529A
公开(公告)日：2015-10-06
申请号：KR1020140034798
申请日：2014-03-25
IPC: C09K13/00 , H01L21/306
CPC classification number: C09K13/06 , H01L21/31111 , H01L21/32134 , H01L27/222
Abstract: 반도체장치에적용되는세정조성물이제공된다. 상기세정조성물은반도체실리콘기판상에건식식각공정을통하여물질막으로부터형성되는물질패턴에서, 물질패턴에적용되는습식식각공정의에천트(etchant)로써, 총 100 중량% 내에 10 내지 20 중량% 의하이드록실아민(hydroxylamine), 5 내지 20 중량% 의하이드라진하이드레이트(hydrazine hydrate), 10 내지 30 중량% 의유기용매와, 물을포함한다.
Abstract translation: 提供了应用于半导体器件的清洁组合物。 清洁组合物作为在半导体硅衬底上通过干法蚀刻工艺在物质图案上形成的物质图案中的湿蚀刻工艺中的蚀刻剂包含相对于总计100重量％的10-20重量％的 羟胺，5-20重量％的水合肼，10-30重量％的有机溶剂和水。
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公开(公告)号：KR1020140050207A
公开(公告)日：2014-04-29
申请号：KR1020120116155
申请日：2012-10-18
Applicant: 삼성전자주식회사
CPC classification number: A61K38/1891 , A61K38/00 , C07K14/00 , C07K14/001 , C07K14/515 , C07K2319/30 , C07K2319/70
Abstract: Provided are an angiopoietin-2 (Ang2) derived peptide, a composition for inhibiting binding between Ang 2 including the peptide and integrin, and a composition for preventing and/or treating diseases caused by activation of Ang2 including the peptide or binding between Ang2 and integrin.
Abstract translation: 提供了一种血管生成素-2（Ang2）衍生肽，用于抑制包含肽和整联蛋白的Ang 2之间的结合的组合物，以及用于预防和/或治疗由包括肽在内的Ang2的活化引起的疾病或Ang2与整联蛋白之间的结合的组合物 。
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14.发明授权
公开(公告)号：KR100852242B1
公开(公告)日：2008-08-13
申请号：KR1020060077000
申请日：2006-08-16
Applicant: 삼성전자주식회사
IPC: C09K3/14
CPC classification number: H01L21/31053 , C09G1/02 , C09K3/1463 , H01L21/76819 , H01L27/10814 , H01L27/10844 , H01L27/10852 , H01L28/91
Abstract: 슬러리 조성물, 이를 이용한 연마 방법 및 반도체 메모리 소자의 제조 방법에서, 슬러리 조성물은 세리아 연마제 0.05 내지 0.3중량%와 음이온성 계면활성제 0.005 내지 0.04중량%와, 폴리옥시에틸렌계 비이온성 계면활성제 0.0005 내지 0.003 중량%와 상기 음이온성 계면활성제 보다 높은 분자량을 갖는 고분자 폴리아크릴산염 0.2 내지 1.0중량%와 여분의 물을 포함한다. 상기 슬러리 조성물은 낮은 함량의 세리아 연마제를 포함하에도 불구하고 실리콘 산화막 대하여 높은 연마 속도를 보이며 실리콘 질화막에 대하여는 현저히 낮은 연마 속도를 보인다.
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15.发明公开
公开(公告)号：KR1020080015553A
公开(公告)日：2008-02-20
申请号：KR1020060077000
申请日：2006-08-16
Applicant: 삼성전자주식회사
IPC: C09K3/14
CPC classification number: H01L21/31053 , C09G1/02 , C09K3/1463 , H01L21/76819 , H01L27/10814 , H01L27/10844 , H01L27/10852 , H01L28/91
Abstract: A slurry composition for chemical mechanical polishing is provided to show a high polishing rate to silicon oxide layer but a low polishing rate to a silicon nitride layer even though a low content of ceria abrasive is contained. A slurry composition for chemical mechanical polishing includes 0.05-0.3wt% of a ceria abrasive, 0.005-0.04wt% of an anionic surfactant, 0.0005-0.003wt% of a polyoxyethylene-based nonionic surfactant, 0.2-1.0wt% of a polyacrylic acid salt having higher molecular weight than the anionic surfactant, and an excess of water. The ceria abrasive has a particle size of 120-200 nm. The polyacrylic acid salt is a polyacrylic acid ammonium salt having a molecular weight of 100,000-400,000.
Abstract translation: 提供用于化学机械抛光的浆料组合物，以显示对氧化硅层的高抛光速率，但是即使含有低含量的二氧化铈磨料，也对氮化硅层的抛光速率低。 用于化学机械抛光的浆料组合物包括0.05-0.3重量％的二氧化铈磨料，0.005-0.04重量％的阴离子表面活性剂，0.0005-0.003重量％的聚氧乙烯基非离子表面活性剂，0.2-1.0重量％的聚丙烯酸 具有比阴离子表面活性剂高的分子量的盐和过量的水。 二氧化铈磨料的粒径为120-200nm。 聚丙烯酸盐是分子量为100,000-400,000的聚丙烯酸铵盐。
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Patent Agency Ranking
公开(公告)号：KR102206029B1
公开(公告)日：2021-01-20
申请号：KR1020140009815
申请日：2014-01-27
Applicant: 삼성전자주식회사
IPC: C07K16/22 , A61K39/395
Abstract: 신생혈관형성유도인자인앤지오포이에틴-2(Angiopoietin-2; Ang-2)에특이적으로결합하여기능을저해하는항체와관련된것으로, 구체적으로, 앤지오포이에틴-2 특이적항체, 상기항체를유효성분으로포함하는혈관신생저해제및 앤지오포이에틴-2 활성화및/또는과생성과관련된질병의치료용조성물, 및상기항체를포함하는앤지오포이에틴-2 활성화및/또는과생성과관련된질병의진단용조성물이제공된다.
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公开(公告)号：KR1020160049389A
公开(公告)日：2016-05-09
申请号：KR1020140146434
申请日：2014-10-27
Applicant: 삼성전자주식회사
IPC: H01L21/027 , H01L21/302
CPC classification number: G03F1/82 , B08B3/00 , B08B3/04 , C11D7/26 , C11D7/34 , C11D11/0047 , H01L21/0274
Abstract: 집적회로소자제조방법에서는유기산과, 산화제와, DIW (deionized water)를포함하는세정조성물을이용하여포토마스크를습식처리한다.
Abstract translation: 在制造集成电路器件的方法中，通过使用包含有机酸，氧化剂和去离子水（DIW）的清洁组合物对光掩模进行湿法处理。 因此，当以预定的周期重复清洁处理时，该方法可以防止光掩模的结构由于清洁材料而被损坏。
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公开(公告)号：KR1020150032075A
公开(公告)日：2015-03-25
申请号：KR1020130112089
申请日：2013-09-17
IPC: A61K39/395 , A61P35/00
CPC classification number: C07K16/28 , A61K38/17 , A61K45/06 , A61K2039/505 , C07K16/22 , C07K2317/32 , C07K2317/565 , C07K2317/74 , C07K2317/75 , C07K2317/77 , C07K2317/92
Abstract: In the present invention, provided are an anti-Ang2 antibody or an antigen binding piece thereof, which is specifically bound to an Angiopoietin-2 (Ang2) as an inducing factor to form angiogenesis and is bound to a Tie2 receptor with the Ang2, a pharmaceutical composition which is taken to patients with medicines and an anticancer supplement including the same.
Abstract translation: 在本发明中，提供了与血管生成素-2（Ang2）特异性结合作为形成血管发生的诱导因子的抗Ang2抗体或其抗原结合片段，并与Ang2结合于Tie2受体，a 服用药物的药物组合物和包含其的抗癌补充剂。
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公开(公告)号：KR1020150028087A
公开(公告)日：2015-03-13
申请号：KR1020130106749
申请日：2013-09-05
Applicant: 삼성전자주식회사
IPC: A61K39/395 , A61P9/00 , A61P7/00
CPC classification number: C07K16/22 , A61K38/1891 , A61K39/3955 , C07K2317/74 , G01N33/74 , G01N2333/515 , G01N2333/71 , G01N2500/02
Abstract: Provided is an use for preventing and/or treating diseases accompanying vascular leakage and/or vascular inflammation comprising an anti-Ang2 antibody or an antigen binding fragment, which is specifically bound to Angiopoietin-2 (Ang2) which is a neovascularization inducing factor, and bound to a Tie2 acceptor with Ang2.
Abstract translation: 提供了用于预防和/或治疗伴随血管渗漏和/或血管炎症的疾病的用途，其包含与作为新血管形成诱导因子的促血管生成素-2（Ang2）特异性结合的抗Ang2抗体或抗原结合片段，以及 与Ang2绑定到Tie2受体。
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