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公开(公告)号：KR1020160141925A
公开(公告)日：2016-12-12
申请号：KR1020150077462
申请日：2015-06-01
Applicant: 삼성전자주식회사
IPC: H01L33/10
CPC classification number: H01L33/46
Abstract: 본발명의실시예에따른반도체발광소자는, 서로대향하는제1 및제2 면을갖는기판, 기판의제1 면상에배치되며, 제1 도전형반도체층, 활성층및 제2 도전형반도체층을포함하는발광구조물, 및기판의제2 면상에순차적으로배치되는제1 브래그층, 분리층및 제2 브래그층을포함하는반사부를포함한다. 제1 및제2 브래그층들각각은서로다른굴절률을가지며교대로적층된복수의층들을포함하고, 분리층은각각의복수의층들보다두꺼운두께를갖는다.
Abstract translation: 一种具有由包括分离层的反射器提供的改进的光提取效率的半导体发光器件。 分离层可以插入在包括一对或多对具有不同折射率的折射层的第一和第二布拉格层之间，第一对堆叠在分离层的一侧上，第二对堆叠在分离相对侧上 层。
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公开(公告)号：KR1020160034534A
公开(公告)日：2016-03-30
申请号：KR1020140125289
申请日：2014-09-19
Applicant: 삼성전자주식회사
IPC: H01L33/10
CPC classification number: H01L33/46 , H01L33/50 , H01L2224/1403 , H01L2224/16225 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00012
Abstract: 본발명의일 측면은, 제1 도전형반도체층, 활성층, 및제2 도전형반도체층을포함하는발광구조물; 및상기발광구조물상에배치되며, 서로다른광학적두께(optical thickness)를갖는복수의유전체층이적어도 1회교차하여배치되고, 상기유전체층중 최대광학적두께를갖는유전체층의광학적두께와상기복수의유전체층중 최소광학적두께를갖는유전체층의광학적두께의합이 0.75 이상 0.80 이하인선택적투과-반사층(selective transmitting-reflecting layer);을포함하는것을특징으로하는반도체발광소자를제공한다.
Abstract translation: 本发明的一个方面提供一种用于改善光的光通量的半导体发光器件。 半导体发光器件包括：发光结构，其包括第一导电类型半导体层，有源层和第二导电类型半导体层; 和布置在发光结构上的选择性透射反射层具有交替布置的具有不同光学厚度的介电层，并且具有介电层和光学器件中具有最小光学厚度的介电层的光学厚度之和 在介电层中具有最大光学厚度的介电层的厚度在0.75和0.80之间。
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公开(公告)号：KR1020140100379A
公开(公告)日：2014-08-14
申请号：KR1020130040530
申请日：2013-04-12
Applicant: 삼성전자주식회사 , 렌슬러 폴리테크닉 인스티튜트
CPC classification number: H01L33/44 , H01L2933/0083
Abstract: One aspect of the present invention provides a semiconductor light emitting device which includes a semiconductor laminate which includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer which is formed between the first and second conductive semiconductor layers, a first electrode and a second electrode which are connected to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, and a fine pattern which is formed on a light output surface to emit light generated from the active layer. The fine pattern includes a cross section which is parallel to the light output surface and has a polygonal shape.
Abstract translation: 本发明的一个方面提供一种半导体发光器件，其包括半导体层叠体，其包括第一导电半导体层，第二导电半导体层和形成在第一和第二导电半导体层之间的有源层，第一电极 以及分别连接到第一导电半导体层和第二导电半导体层的第二电极以及形成在光输出表面上以发射从有源层产生的光的精细图案。 精细图案包括平行于光输出表面并具有多边形形状的横截面。
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公开(公告)号：KR1020140006485A
公开(公告)日：2014-01-16
申请号：KR1020120073511
申请日：2012-07-05
Applicant: 삼성전자주식회사
CPC classification number: H01L27/15 , H01L27/156 , H01L33/005 , H01L33/20 , H01L2933/0016
Abstract: A method for manufacturing a multicell array semiconductor light emitting device according to an embodiment of the present invention includes the steps of: successively forming a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the upper side of a substrate; etching and removing the second conductive semiconductor layer and the active layer to expose the upper side of the first conductive semiconductor layer in each area which is regularly separated on the second conductive semiconductor layer; and separating a unit light emitting cell by etching a part of the exposed part of the first conductive semiconductor layer. The step of separating the unit light emitting cell by etching the first conductive semiconductor layer is not performed on the outer side of the substrate.
Abstract translation: 根据本发明实施例的多芯体阵列半导体发光器件的制造方法包括以下步骤：在衬底的上侧依次形成第一导电半导体层，有源层和第二导电半导体层; 蚀刻和去除第二导电半导体层和有源层，以在第二导电半导体层上规则分离的每个区域中露出第一导电半导体层的上侧; 以及通过蚀刻所述第一导电半导体层的暴露部分的一部分来分离单位发光单元。 通过蚀刻第一导电半导体层分离单位发光单元的步骤不在基板的外侧进行。
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Patent Agency Ranking
公开(公告)号：KR1020130103072A
公开(公告)日：2013-09-23
申请号：KR1020120024413
申请日：2012-03-09
Applicant: 삼성전자주식회사
CPC classification number: H05B33/083 , H05B33/0809 , H05B33/0821
Abstract: PURPOSE: A light emitting device is provided to reduce a flicker phenomenon by increasing the light emission time through a delay unit which is formed on at least one light emitting diode array. CONSTITUTION: A light emitting unit (102) includes a plurality of light emitting diode arrays. Each light emitting diode array includes one or more light emitting diodes. The light emitting diode arrays are connected to both ends of a power supply unit in parallel. The power supply unit includes an AC source (101) and a rectifying unit (103) which supplies a rectification signal to each light emitting diode array. At least one light emitting diode array includes a delay unit.
Abstract translation: 目的：提供一种发光装置，通过在至少一个发光二极管阵列上形成的延迟单元增加发光时间来减少闪烁现象。 构成：发光单元（102）包括多个发光二极管阵列。 每个发光二极管阵列包括一个或多个发光二极管。 发光二极管阵列并联连接到电源单元的两端。 电源单元包括向每个发光二极管阵列提供整流信号的AC源（101）和整流单元（103）。 至少一个发光二极管阵列包括延迟单元。
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公开(公告)号：KR101926360B1
公开(公告)日：2018-12-07
申请号：KR1020120053550
申请日：2012-05-21
Applicant: 삼성전자주식회사
Abstract: 본 발명의 실시형태에 따른 반도체 발광장치는 기판; 상기 기판 상면에 위치하며, 각각 상기 기판 상면에 순차적으로 형성된 제1 도전형 반도체층, 활성층 및 제2 도전형 반도체층을 갖는 복수의 발광셀; 상기 발광셀 각각에 형성되며 서로 다른 극성을 지닌 복수의 제1 전극 및 복수의 제2 전극; 상기 발광셀에 형성된 복수의 제1 전극과 인접한 상기 발광셀에 형성된 복수의 제2 전극을 각각 직렬 연결하는 복수의 상호연결부; 및 상기 복수의 상호연결부와 상기 발광셀의 원하지 않는 접속이 방지되도록 상기 발광셀의 표면에 형성된 절연층;을 포함한다.
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公开(公告)号：KR1020170005317A
公开(公告)日：2017-01-12
申请号：KR1020150095120
申请日：2015-07-03
Applicant: 삼성전자주식회사
IPC: H01L33/10
CPC classification number: H01L33/46 , F21K9/23 , F21K9/27 , F21V23/005 , F21Y2103/10 , F21Y2105/10 , F21Y2115/10 , H01L33/08 , H01L33/24 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
Abstract: 본발명의실시예에따른반도체발광소자는, 서로대향하는제1 및제2 면을갖는기판; 상기기판의상기제1 면상에배치되며, 제1 도전형반도체층, 활성층및 제2 도전형반도체층을포함하는발광구조물, 및상기기판의상기제2 면상에배치되며, 저굴절률층및 브래그층을포함하는반사부를포함한다. 상기브래그층은서로다른굴절률을가지며교대로적층된복수의층들을포함하고, 상기저굴절률층은상기브래그층보다낮은굴절률을갖는다.
Abstract translation: 半导体发光器件可以包括具有第一表面和第二表面的衬底，第二表面与第一表面相对; 发光结构，其设置在所述基板的所述第一表面上，并且包括第一导电型半导体层，有源层和第二导电型半导体层; 以及设置在所述基板的所述第二表面上并且包括低折射率层和布拉格层的反射器，其中所述布拉格层包括具有不同折射率的多个交替堆叠的层，并且其中所述低折射率层的折射率 低于布拉格层的折射率。
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公开(公告)号：KR1020140146451A
公开(公告)日：2014-12-26
申请号：KR1020130069192
申请日：2013-06-17
Applicant: 삼성전자주식회사
CPC classification number: H01L33/42 , H01L33/38 , H01L33/405 , H01L33/46
Abstract: A semiconductor light emitting device according to the embodiment of the present invention includes a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode which is connected to the first conductive semiconductor layer; and a second electrode which is connected to the second conductive semiconductor layer and includes a pad region and a finger region which is extended from the pad region in one direction. The second electrode includes a transparent electrode part which is located on the second conductive semiconductor layer and includes at least one opening part; at least one reflection part which is separated from the transparent electrode part in the opening part and is arranged in the pad region and the finger region; and a bonding part which is located on at least part of the reflection part and includes a plurality of finger bonding parts which are separately arranged on the finger region and a pad bonding part which is arranged on the pad region.
Abstract translation: 根据本发明实施例的半导体发光器件包括：发光结构，包括第一导电半导体层，有源层和第二导电半导体层; 连接到第一导电半导体层的第一电极; 以及第二电极，其连接到第二导电半导体层并且包括焊盘区域和从一个方向从焊盘区域延伸的指状区域。 第二电极包括位于第二导电半导体层上并包括至少一个开口部分的透明电极部分; 至少一个反射部分，其与所述开口部分中的所述透明电极部分分离并且布置在所述焊盘区域和所述手指区域中; 以及位于所述反射部的至少一部分上并且包括分开布置在所述手指区域上的多个指状粘合部分和布置在所述焊盘区域上的焊盘接合部分的接合部分。
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