公开(公告)号：KR1020020092683A

公开(公告)日：2002-12-12

申请号：KR1020010031458

申请日：2001-06-05

Applicant: 삼성전자주식회사

Inventor： 정우찬 ,  전진호 ,  최병덕 ,  임전식 ,  이종승

IPC: H01L21/20

Abstract: PURPOSE: A method for improving a yield of a deposition process of a flowing oxide in a semiconductor is provided to improve productivity, prevent a loss of etching solution, and lengthen a lifetime of a motor by optimizing a back side cleaning time and a drying time of a wafer. CONSTITUTION: The seventh process(18) is a process for rising a back side of a wafer. A flowing oxide layer is deposited on a wafer by using a spin method. The eleventh process(22) is a process for drying the back side of the wafer. Each predetermined processing time is determined in the seventh process(18) and the eleventh process(22). In the seventh process(18), an injecting time of the etching solution is determined within 10 to 19 seconds and only a BR valve is in the opening state. In the eleventh process(22), the dry time is determined within 10 to 19 seconds and only a CR valve is in the opening state.

Abstract translation: 目的：提供一种用于提高半导体中流动的氧化物的沉积过程的产率的方法，以通过优化背面清洁时间和干燥时间来提高生产率，防止蚀刻溶液的损失和延长电机的寿命 的晶片。 构成：第七工序（18）是使晶片背面上升的工序。 通过使用旋转方法将流动的氧化物层沉积在晶片上。 第十二工序（22）是干燥晶片的背面的工序。 在第七过程（18）和第十一处理（22）中确定每个预定的处理时间。 在第七工序（18）中，在10〜19秒内确定蚀刻溶液的注入时间，只有BR阀处于打开状态。 在第十一工序（22）中，干燥时间在10〜19秒内确定，只有CR阀处于打开状态。

公开(公告)号：KR1020020068673A

公开(公告)日：2002-08-28

申请号：KR1020010008860

申请日：2001-02-22

Applicant: 삼성전자주식회사

Inventor： 정우찬 ,  전진호

IPC: H01L21/00

Abstract: PURPOSE: A chemical storage apparatus is provided to improve efficiency of chemicals including FOX(Flowable OXide) by storing the chemicals of 1,500 to 2,000cc. CONSTITUTION: A chemical storage apparatus is formed with a storage portion(10) and a connection portion(12). The storage portion(10) is used for storing chemicals under temperature of -20 to 0 degrees centigrade. The connection portion(12) is installed at one side end portion of the storage portion(10). The connection portion(12) is connected with a supply line for providing chemicals to semiconductor fabrication equipment. The storage portion(10) has an outer diameter(l1) of 12.0 to 13.4cm, an inter diameter(l2) of 10.1 to 11.1cm, and height(l3) of 21.4 to 21.6cm. Accordingly, the storage portion(10) can store the chemicals including FOX for laminating SOG(Spin On Glass) of 2,000cc.

Abstract translation: 目的：提供化学品储存装置，通过储存1,500至2,000cc的化学物质来提高化学品的效率，包括FOX（可流动氧化）。 构成：化学品储存装置形成有储存部分（10）和连接部分（12）。 储存部分（10）用于在-20至0摄氏度的温度下储存化学品。 连接部分（12）安装在存储部分（10）的一个侧端部分。 连接部分（12）与用于向半导体制造设备提供化学品的供应管线连接。 存储部（10）的外径（l1）为12.0〜13.4cm，内径（12）为10.1〜11.1cm，高度（13）为21.4〜21.6cm。 因此，存储部（10）可以存储包含FOX的化学品，用于层压2,000cc的SOG（旋转玻璃）。

公开(公告)号：KR1020020010303A

公开(公告)日：2002-02-04

申请号：KR1020000043952

申请日：2000-07-29

Applicant: 삼성전자주식회사

Inventor： 정우찬 ,  임전식

IPC: H01L21/68

Abstract: PURPOSE: Equipment for manufacturing a semiconductor is provided to increase productivity by remarkably decreasing the number of processes performed in atmospheric pressure chemical vapor deposition(APCVD) equipment, and to greatly shorten the cleaning period and time of a process belt by minimizing contamination of the process belt. CONSTITUTION: A wafer is loaded to a loader(100). The wafer is supplied to the loader which transfers the wafer. The second conveyer is supplied with the wafer from the first conveyer while closed, and forms a predetermined thin film on the wafer by reaction gas. The wafer is loaded from the second conveyer to the third conveyer. A process unit(200) includes the first, second and third conveyers. The wafer is loaded from the third conveyer to an unloader(300). The number of the wafers simultaneously loaded to the first, second and third conveyers has a multiple relation with the number of whole wafers received in the loader.

Abstract translation: 目的：提供用于制造半导体的设备，通过显着降低在大气压化学气相沉积（APCVD）设备中进行的工艺数量来提高生产率，并通过最小程度地减少工艺带的污染来大大缩短工艺带的清洁周期和时间 带。 构成：将晶片装载到装载机（100）中。 晶片被提供给传送晶片的装载器。 第二输送机在封闭时从第一输送机供给晶片，并通过反应气体在晶片上形成预定的薄膜。 晶片从第二输送机装载到第三输送机。 处理单元（200）包括第一，第二和第三输送机。 晶片从第三输送机装载到卸载机（300）。 同时装载到第一，第二和第三输送机的晶片的数量与在装载机中接收的整个晶片的数量具有多重关系。

公开(公告)号：KR1020060020337A

公开(公告)日：2006-03-06

申请号：KR1020040069159

申请日：2004-08-31

Applicant: 삼성전자주식회사

Inventor： 정우찬

IPC: H04B1/40

CPC classification number: H04M1/72563 ,  H04W4/12 ,  H04W88/021

Abstract: 본 발명은 이동통신 단말기의 호 착신 알람 방식을 자동으로 변경하는 장치 및 방법을 제공한다. 이를 위해 본 발명은 각 동작 상태마다 설정된 착신 모드들이 저장되는 착신 모드 저장부와, 이동통신 단말기의 동작 상태에 따른 착신 모드의 호 착신 알람 방식으로 호 착신 알람 방식을 자동으로 변경하는 제어부를 구비한다. 그러므로 본 발명에서는 호 착신이 감지되면, 사용자에게 이를 알리는 호 착신 알람을, 현재의 이동통신 단말기의 동작 상태에 대응되는 호 착신 알람 방식으로 자동 변경한다. 이에 따라 사용자는 이동통신 단말기의 동작 상태에 따라 사용자가 호 착신 알람을 인지하지 못하게 되는 경우를 방지할 수 있으며, 현재 이동통신 단말기에서 수행되는 동작을 호 착신 알람으로 인해 방해받는 경우를 방지할 수 있다.

호 착신, 호 착신 알람 방식

公开(公告)号：KR1020060013085A

公开(公告)日：2006-02-09

申请号：KR1020040061881

申请日：2004-08-06

Applicant: 삼성전자주식회사

Inventor： 정우찬 ,  임석훈

IPC: H04B1/40

CPC classification number: H04M1/72563 ,  H04M1/247 ,  H04N5/232

Abstract: 본 발명은 카메라 모듈을 구비하는 이동통신단말기에서 화상의 일부를 편집하기 위한 방법에 관한 것으로, 촬영대기모드시, 상기 카메라 모듈에서 촬영되는 동화상을 표시창에 프리뷰(preview)하는 과정과, 이미지 편집키 입력시, 상기 프리뷰 화면에 편집영역을 지정하기 위한 포인트 스팟을 생성하는 과정과, 상기 포인트 스팟에 의해 지정되는 영역을 편집하기 위한 설정 정보를 입력받는 과정과, 사용자의 방향버튼 조작에 의해 상기 포인트 스팟을 이동하는 과정과, 촬영버튼 입력시, 상기 표시창에 디스플레이된 동화상으로부터 정지 화상을 획득하는 과정과, 상기 획득된 정지 화상 중 상기 포인트 스팟에 의해 지정된 영역을 상기 설정 정보에 따라 편집하여 상기 표시창에 디스플레이하는 과정을 포함하는 것을 특징으로 한다. 이와 같은 본 발명은 사용자가 포인트 스팟(point spot)을 움직여 원하는 부분을 선택할수 있고, 그 크기 및 효과도 자유자재로 설정 가능하므로, PC(personal computer)작업 없이 단말기에서 바로 화상을 다양한 방식으로 편집할수 있는 이점이 있다.
카메라폰, 편집, 포인트 스팟

Abstract translation: 本发明涉及具有摄像机模块，记录待机模式，预览运动图像被显示在显示（预览）的相机模块拍摄，图像编辑方法，包括密钥的步骤，在移动通信终端编辑图像的一个部分的方法 当输入输入图像时，在预览屏幕上生成用于指定编辑区域的点点;输入用于编辑由点点指定的区域的设置信息; 当输入拍摄按钮时从显示窗口上显示的运动图像中获取静止图像;根据设置信息编辑由获得的静止图像中的点点指定的区域， 并在显示单元上显示图像。 根据如上所述的本发明，用户可以通过移动点光点来选择期望的部分，并且其大小和效果可以自由设置，因此，可以直接编辑图像 这样做有一个好处。

公开(公告)号：KR100397177B1

公开(公告)日：2003-09-06

申请号：KR1020010021067

申请日：2001-04-19

Applicant: 삼성전자주식회사

Inventor： 정우찬 ,  전진호 ,  임전식 ,  이종승

IPC: H01L21/316

CPC classification number: C23C16/401 ,  C23C16/56

Abstract: A semiconductor device and the methods used in production, particularly the insulating layer comprising creating a process atmosphere in a chamber for forming a fluidal insulating layer by: flowing an oxidising gas at an oxidising gas flow rate for forming an oxidising atmosphere, flowing a first carrier gas at a first carrier gas flow rate and flowing a second carrier gas at a second carrier gas flow rate, the second carrier gas flow rate being greater then the first carrier gas flow rate, forming the fluidal insulating layer on a substrate positioned in the chamber by flowing the oxidising gas at the oxidising gas flow rate, flowing the first carrier gas at the first carrier gas flow rate while carrying a first impurity including boron flowing at a first impurity flow rate, flowing the second carrier gas at the second carrier gas flow rate while carrying a second impurity including phosphorous flowing at a second impurity flow rate, the second carrier gas flow rate being greater than the first carrier gas flow rate, and flowing a silicon source material at a silicon source flow rate.

Abstract translation: 一种半导体器件和生产中使用的方法，特别是绝缘层，包括：在用于形成流体绝缘层的腔室中产生工艺气氛，通过：以氧化气体流速流动氧化气体以形成氧化气氛，使第一载体 气体以第一载气流速流动并且以第二载气流速流动第二载气，所述第二载气流速大于所述第一载气流速，在位于所述腔室中的基板上形成所述流体绝缘层 通过使氧化气体以氧化气体流量流动，使第一载气以第一载气流量流动，同时载送包含以第一杂质流率流动的硼的第一杂质，使第二载气在第二载气流 同时承载包括以第二杂质流量流动的磷的第二杂质，第二载气流量大于 第一载气流量，并且使硅源材料以硅源流量流动。

公开(公告)号：KR1020030013122A

公开(公告)日：2003-02-14

申请号：KR1020010047456

申请日：2001-08-07

Applicant: 삼성전자주식회사

Inventor： 정우찬

IPC: H01L21/31

CPC classification number: H01L29/6656 ,  H01L21/28247 ,  H01L21/31111 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/823425

Abstract: PURPOSE: A semiconductor device and a method for fabricating the same are provided to reduce a bubble defect of a gate electrode structure by removing a GPOX(Gate Poly OXide) layer or preventing the formation of the GPOX layer. CONSTITUTION: A gate electrode structure(110) is formed on an upper surface of a semiconductor substrate(100). The gate electrode structure(110) is formed with a gate insulating layer, a doped polysilicon layer, a metal silicide layer, and a capping insulating layer, and a spacer. A GPOX layer is formed on the surface of the semiconductor substrate(100) including the gate electrode structure(110). A cleaning process is performed on the surface of the semiconductor substrate(100). An etch stopper(140) is formed on the gate electrode structure(110) and the semiconductor substrate(100). An HDP(High Density Plasma) oxide layer(150) is deposited on the etch stopper(150). The GPOX layer is removed by performing the cleaning process.

Abstract translation: 目的：提供一种半导体器件及其制造方法，通过去除GPOX（Gate Poly OXide）层或防止形成GPOX层来减少栅电极结构的气泡缺陷。 构成：在半导体衬底（100）的上表面上形成栅电极结构（110）。 栅电极结构（110）形成有栅极绝缘层，掺杂多晶硅层，金属硅化物层和封盖绝缘层以及间隔物。 在包括栅电极结构（110）的半导体衬底（100）的表面上形成GPOX层。 在半导体衬底（100）的表面上执行清洁处理。 在栅电极结构（110）和半导体衬底（100）上形成蚀刻停止器（140）。 在蚀刻停止器（150）上沉积HDP（高密度等离子体）氧化物层（150）。 通过执行清洁过程去除GPOX层。

公开(公告)号：KR1020030004930A

公开(公告)日：2003-01-15

申请号：KR1020010040686

申请日：2001-07-07

Applicant: 삼성전자주식회사

Inventor： 정우찬 ,  이종구

IPC: H01L21/31

CPC classification number: H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31055 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76832 ,  H01L21/76837 ,  H01L21/823425 ,  Y10S438/958

Abstract: PURPOSE: A method for fabricating a semiconductor device and a method for forming an interlayer dielectric using high density plasma used for the same are provided to prevent generation of a void shape from an intermediate part between gates by using high density plasma. CONSTITUTION: A trench is formed into a lower portion of a semiconductor substrate(100). An isolation oxide layer(101) is formed by filling the trench with an insulating layer. A gate insulating layer(110) and a plurality of gates(120) are formed between a source(103) and a drain(103). The gate(120) is formed by stacking gate conductive layers(121,123), a mask insulating layer(125), and an insulating layer spacer(127). An interlayer dielectric(130) is formed between the gates(120). A bit line(150) is formed on an upper surface of the interlayer dielectric(130). The second interlayer dielectric(140) is formed on an upper surface of the bit line(150).

Abstract translation: 目的：提供一种用于制造半导体器件的方法和使用其使用的高密度等离子体形成层间电介质的方法，以防止通过使用高密度等离子体从栅极之间的中间部分产生空隙形状。 构成：沟槽形成在半导体衬底（100）的下部。 通过用绝缘层填充沟槽来形成隔离氧化物层（101）。 在源极（103）和漏极（103）之间形成栅极绝缘层（110）和多个栅极（120）。 栅极（120）通过层叠栅极导电层（121,123），掩模绝缘层（125）和绝缘层间隔物（127）而形成。 在栅极（120）之间形成层间电介质（130）。 在层间电介质（130）的上表面上形成位线（150）。 第二层间电介质（140）形成在位线（150）的上表面上。

公开(公告)号：KR1020020044209A

公开(公告)日：2002-06-15

申请号：KR1020000073191

申请日：2000-12-05

Applicant: 삼성전자주식회사

Inventor： 정우찬 ,  전진호 ,  임전식 ,  이종승 ,  김경태

IPC: H01L21/20

CPC classification number: H01L21/02274 ,  C23C16/308 ,  H01L21/0214 ,  H01L21/3145

Abstract: PURPOSE: A method for fabricating a PE-SiON thin film is provided to prevent an abnormal reaction of NH3 gas and to remarkably reduce particles generated in forming the PE-SiON thin film, by making SiH4 gas not bypassed and by simultaneously making the SiH4 gas and the other reaction gas like N2, NH3 and N2O flow to the inside of a chamber before radio frequency(RF) power turns on. CONSTITUTION: A plurality of reaction gas like SiH4, N2, NH3 and N2O flows to the inside of the chamber at the same time without bypassing the SiH4 gas. The PE-SiON thin film is deposited in the chamber by turning on the RF power. The RF power turns on three seconds after the plurality of reaction gas starts to flow.

Abstract translation: 目的：提供一种制造PE-SiON薄膜的方法，以防止NH 3气体的异常反应，并且通过使SiH 4气体不被旁路并同时制造SiH 4气体而显着降低在形成PE-SiON薄膜时产生的颗粒 在射频（RF）电源打开之前，像N2，NH3和N2O这样的其他反应气体流到室内。 构成：像SiH4，N2，NH3和N2O这样的多个反应气体同时流到室内，而不会绕过SiH4气体。 通过接通RF功率将PE-SiON薄膜沉积在室中。 在多个反应气体开始流动之后，RF功率开启三秒钟。

公开(公告)号：KR1020020035978A

公开(公告)日：2002-05-16

申请号：KR1020000065821

申请日：2000-11-07

Applicant: 삼성전자주식회사

Inventor： 정우찬 ,  전진호 ,  최병덕 ,  김경태

IPC: H01L21/00

Abstract: PURPOSE: A vacuum pressure system is provided to improve driving efficiency of a vacuum pump and shorten an interval of time for forming a vacuum pressure, by making a vacuum pressure state inside a chamber have more than a predetermined value and by supplying gas corresponding to an excessive vacuum pressure. CONSTITUTION: Sealing is selectively maintained in a chamber(12a,12b). The vacuum pump(33) selectively supplies a vacuum pressure, connected to the chamber through an exhaust pipe having a throttle valve(32). A sensor(34) measures the vacuum pressure state inside the chamber. A gas supply unit(36) supplies predetermined gas to the inside of the chamber, connected to the chamber by a connection pipe(41). An intercepting unit(42) controls the flow rate of the predetermined gas to the chamber, installed on the connection pipe. A controller controls driving of the throttle valve, the vacuum pump and the intercepting unit through a measured signal of the sensor.

Abstract translation: 目的：提供一种真空压力系统，以提高真空泵的驱动效率，缩短形成真空压力的时间间隔，通过使室内的真空压力状态达到预定值以上，并通过供给对应于 真空度过高。 构成：选择性地将密封保持在腔室（12a，12b）中。 真空泵（33）选择性地通过具有节流阀（32）的排气管提供连接到室的真空压力。 传感器（34）测量室内的真空压力状态。 气体供给单元（36）通过连接管（41）向室内供给预定的气体。 拦截单元（42）控制安装在连接管上的预定气体到腔室的流量。 控制器通过传感器的测量信号来控制节气门，真空泵和拦截单元的驱动。