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公开(公告)号:KR1020100058127A
公开(公告)日:2010-06-03
申请号:KR1020080116841
申请日:2008-11-24
Applicant: 삼성전자주식회사
CPC classification number: H04N5/378 , H04N5/3575 , H04N5/365 , H04N9/045
Abstract: PURPOSE: An image sensor and a system including the same are provided to improve sensitivity and SNR(Signal to Noise Raito) by enhancing a penetration ratio of incoming light. CONSTITUTION: A plurality of white filters(112,113,116,117,120,121,124,125) penetrates whole components of incoming light. A plurality of yellow filters(111,123) penetrates a green component and a red component of the incoming light. A plurality of cyan filters(115,119) penetrates the green component and a blue component of the incoming light. A plurality of green filters(114,118,122,126) penetrates the green component. A plurality of light sensing devices(D1~D16) converts light penetrating a color filter array(110) into an electric signal.
Abstract translation: 目的:提供一种图像传感器和包括该图像传感器的系统,以通过提高入射光的穿透比来提高灵敏度和SNR(信噪比)。 构成:多个白色滤光器(112,113,116,117,120,121,124,125)穿透入射光的整个分量。 多个黄色滤光器(111,123)穿透入射光的绿色分量和红色分量。 多个青色滤光器(115,119)穿透入射光的绿色分量和蓝色分量。 多个绿色过滤器(114,118,122,126)穿透绿色部件。 多个感光装置(D1〜D16)将穿过滤色器阵列(110)的光转换为电信号。
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公开(公告)号:KR1020100057302A
公开(公告)日:2010-05-31
申请号:KR1020080116284
申请日:2008-11-21
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14625 , G01J3/0208 , G01J3/0216 , G01J3/0259 , G01J3/0297 , G01J3/465 , G01J3/513 , H01L27/14609 , H01L27/14629 , Y10T29/49002
Abstract: PURPOSE: A light guides of the manufacturing method thereof silver image sensor and image sensor are formed into the different width. The photonic efficiency of the image sensor is improved. CONSTITUTION: A plurality of photoelectric transform portion(110R, 110G, 110B) is formed in the semiconductor substrate(101) within the active area. In order to be income to the photoelectric transform portion a plurality of the light guide(330R, 330G, 330B) guides the light which is income from outside to the semiconductor substrate.
Abstract translation: 目的:将其制造方法的银图像传感器和图像传感器的光导形成为不同的宽度。 改善了图像传感器的光子效率。 构成:在有源区域内的半导体衬底(101)中形成有多个光电变换部(110R,110G,110B)。 为了获得光电变换部分,多个导光体(330R,330G,330B)将从外部收入的光引导到半导体基板。
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