公开(公告)号：KR1020070031713A

公开(公告)日：2007-03-20

申请号：KR1020050086452

申请日：2005-09-15

Applicant: 삼성전자주식회사

Inventor： 정종현 ,  홍선영

IPC: G02F1/136

CPC classification number: G02F1/136 ,  G02F1/133553 ,  G02F2001/136295 ,  G02F2201/42

Abstract: 본 발명은 액정표시장치 및 그 제조방법을 제공한다. 본 발명의 액정표시장치는 기판상에서 서로 교차하며 화소를 한정하고 그 끝단에 접속단자를 갖는 복수의 배선과, 상기 각 화소에 구비되며 상기 접속단자를 덮도록 형성되는 반사막 패턴을 포함한다. 상기 반사막 패턴은 각 화소에서 외부의 빛을 반사하는 외에, 접속단자를 덮으며 그 하부의 접속단자를 보호한다. 즉, 상기 반사막 패턴은 기판상에 반사막을 증착한 후 이를 습식 식각하여 형성되는데, 이 때 상기 반사막이 접속단자상에 잔류하도록 하면 반사막에 대한 식각액이 접속단자와 직접 반응하여 손상을 입히는 것이 방지된다.
액정, 기판, 반사, 투과, 식각액

公开(公告)号：KR1020100067814A

公开(公告)日：2010-06-22

申请号：KR1020080126367

申请日：2008-12-12

Applicant: 삼성전자주식회사

Inventor： 김도현 ,  정종현 ,  최영주 ,  박홍식 ,  인태형 ,  이동훈 ,  윤필상 ,  박제형 ,  정창오 ,  이제훈 ,  홍선영 ,  김봉균 ,  이병진 ,  서남석

IPC: G02F1/136 ,  G02F1/1343

CPC classification number: G02F1/136286 ,  G02F2001/133302 ,  G02F2001/136295

Abstract: PURPOSE: A display substrate and a method of manufacturing the same are provided to prevent a defect due to a step during following processes of a patterning process. CONSTITUTION: A deformation preventing layer(105) is formed on the lower surface of a base substrate(101). A gate line is formed on the upper side of the base substrate. A data line is formed on the base substrate on which the gate line is formed. A pixel electrode is formed on the base substrate on which the data line is formed. The deformation preventing layer and the gate line respectively have tensile stress.

Abstract translation: 目的：提供显示基板及其制造方法，以防止在图案化处理的后续处理中由于步骤而导致的缺陷。 构成：在基底（101）的下表面上形成变形防止层（105）。 栅极线形成在基底基板的上侧。 在形成有栅极线的基底基板上形成数据线。 在形成数据线的基底基板上形成像素电极。 变形防止层和栅极线分别具有拉伸应力。

公开(公告)号：KR1020080058869A

公开(公告)日：2008-06-26

申请号：KR1020060133048

申请日：2006-12-22

Applicant: 삼성전자주식회사

Inventor： 이병진 ,  박홍식 ,  정종현 ,  홍선영 ,  김봉균 ,  신원석

IPC: G02F1/136

CPC classification number: G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  H01L21/306

Abstract: A method of manufacturing a TFT(Thin Film Transistor) array substrate is provided to form a pixel electrode through wet etch using a diluted etchant to reduce an etch rate, thereby decreasing CD skew and preventing residue after etching. A gate line(22) is formed on an insulating substrate(10). A data line(62) is insulated from the gate line and intersects the gate line. A transparent conductive oxide layer(81) is connected to a part of the data line and does not include indium. The transparent conductive oxide layer is wet-etched by using a basic etchant and a diluted etchant mixed with deionized water to form a pixel electrode.

Abstract translation: 提供一种制造TFT（薄膜晶体管）阵列基板的方法，以通过使用稀释蚀刻剂的湿蚀刻形成像素电极，以降低蚀刻速率，从而减少CD偏斜并防止蚀刻后的残留。 栅极线（22）形成在绝缘基板（10）上。 数据线（62）与栅极线绝缘并与栅极线相交。 透明导电氧化物层（81）连接到数据线的一部分，不包括铟。 通过使用碱性蚀刻剂和与去离子水混合的稀释蚀刻剂来湿式蚀刻透明导电氧化物层以形成像素电极。

公开(公告)号：KR1020080041333A

公开(公告)日：2008-05-13

申请号：KR1020060109287

申请日：2006-11-07

Applicant: 삼성전자주식회사

Inventor： 김봉균 ,  박홍식 ,  정종현 ,  홍선영 ,  신원석 ,  이병진

IPC: H01L29/786 ,  G02F1/133 ,  G02F1/136

CPC classification number: H01L21/02068 ,  G02F1/1368 ,  H01L27/1288

Abstract: A method for fabricating a TFT(thin film transistor) substrate is provided to suppress generation of corrosion byproducts and remove an organic material by performing an ultraviolet cleaning process in etching a source/drain metal layer using a copper interconnection with low resistance. A thin film is coated on a substrate(101). A photoresist pattern is formed on the thin film. The thin film is etched by using the photoresist pattern. The photoresist pattern is stripped. An ultraviolet cleaning process is performed in one of the etch process or the strip process. A process for forming a second conductive pattern group can include the following steps. A gate insulation layer(112), a semiconductor pattern(115) and a source/drain metal layer using copper are continuously deposited on a first conductive pattern group. A photoresist pattern is formed on the source/drain metal layer by using a mask. The source/drain metal layer is etched by using the photoresist pattern to form the semiconductor pattern including an active layer(114) and an ohmic contact layer(116) . The photoresist pattern is ashed. The source electrode(108) and the drain electrode(110) exposed through the ashed photoresist pattern are separated. The active layer between the separated source and drain electrodes is exposed. The photoresist pattern is stripped.

Abstract translation: 提供了制造TFT（薄膜晶体管）基板的方法，以通过使用具有低电阻的铜互连来蚀刻源极/漏极金属层，通过进行紫外线清洁处理来抑制腐蚀副产物的产生并去除有机材料。 将薄膜涂覆在基板（101）上。 在薄膜上形成光刻胶图形。 通过使用光致抗蚀剂图案来蚀刻薄膜。 剥离光致抗蚀剂图案。 在蚀刻工艺或剥离处理之一中进行紫外线清洁处理。 用于形成第二导电图案组的工艺可以包括以下步骤。 使用铜的栅极绝缘层（112），半导体图案（115）和源极/漏极金属层连续地沉积在第一导电图案组上。 通过使用掩模在源极/漏极金属层上形成光致抗蚀剂图案。 通过使用光致抗蚀剂图案来蚀刻源极/漏极金属层，以形成包括有源层（114）和欧姆接触层（116）的半导体图案。 光刻胶图案灰化。 通过灰化光刻胶图案曝光的源电极（108）和漏电极（110）被分离。 分离的源极和漏极之间的有源层被暴露。 剥离光致抗蚀剂图案。

公开(公告)号：KR1020080032312A

公开(公告)日：2008-04-15

申请号：KR1020060097883

申请日：2006-10-09

Applicant: 삼성전자주식회사

Inventor： 김봉균 ,  박홍식 ,  정종현 ,  홍선영 ,  신원석 ,  이병진

IPC: B01D53/66 ,  B01D53/94

CPC classification number: Y02A50/2347

Abstract: A method for stripping photoresist and purifying pollution sources, a method for decomposing ozone, and an apparatus for stripping the photoresist are provided to improve the rate in decomposition of ozone used for a photolithographic process. A process of stripping photoresist and purifying pollution sources is performed by removing a photoresist film from a substrate(S10), generating ozone, decomposing the removed photoresist film through reaction between the ozone and the removed photoresist film(S20), decomposing the ozone into oxygen(S30), and discharging the oxygen. The ozone is decomposed by using UV and photo-catalyst. The photo-catalyst is at least one of zinc oxide, cadmium sulfide, and tungsten oxide.

Abstract translation: 提供剥离光致抗蚀剂和净化污染源的方法，分解臭氧的方法以及剥离光致抗蚀剂的装置，以提高用于光刻工艺的臭氧分解速率。 通过从基板去除光致抗蚀剂膜（S10），产生臭氧，通过臭氧和去除的光致抗蚀剂膜之间的反应分解除去的光致抗蚀剂膜（S20），将臭氧分解成氧气，进行剥离光致抗蚀剂和净化污染源的工艺（S10） （S30），并排出氧气。 臭氧通过使用UV和光催化剂分解。 光催化剂是氧化锌，硫化镉和氧化钨中的至少一种。

公开(公告)号：KR1020080030156A

公开(公告)日：2008-04-04

申请号：KR1020060095863

申请日：2006-09-29

Applicant: 삼성전자주식회사

Inventor： 신원석 ,  박홍식 ,  정종현 ,  홍선영 ,  김봉균 ,  이병진

IPC: H01L29/786 ,  G02F1/133 ,  G02F1/136

CPC classification number: G02F1/136227 ,  H01L27/124 ,  H01L27/1288

Abstract: A method for manufacturing a thin film transistor array panel is provided to remove easily a transparent conductive layer from a substrate by injecting a stripper onto an undercut part of a substrate. A gate line is formed on a substrate(110). A gate insulating layer is formed on the gate line. A semiconductor layer(151), a contact member layer, and a conductive layer are formed on the gate insulating layer. A semiconductor pattern, a contact member, a data line(171), and a drain electrode(175) are formed by patterning the semiconductor layer, the contact member layer, and the conductive layer. A passivation layer is formed on the data line, the drain electrode, and the gate insulating layer. A photoresist layer is formed on the passivation layer. An opening for exposing a part of the drain electrode is formed by etching the passivation layer. A transparent conductive layer is formed on the opening of the passivation layer and the photoresist layer. An inclined transfer process for the substrate is performed to form the substrate having an inclined range of 0 to 10 degrees to a horizontal plane. A stripper is injected onto the substrate at a range of 45 to 85 degrees to the substrate, in order to form a pixel electrode(191) by removing the photoresist layer and separating the transparent conductive layer from the photoresist layer.

Abstract translation: 提供一种制造薄膜晶体管阵列面板的方法，通过将剥离剂注入到基底的底切部分上，容易地从基底上去除透明导电层。 在基板（110）上形成栅极线。 在栅极线上形成栅极绝缘层。 在栅极绝缘层上形成半导体层（151），接触部件层和导电层。 通过图案化半导体层，接触构件层和导电层来形成半导体图案，接触构件，数据线（171）和漏极（175）。 在数据线，漏电极和栅极绝缘层上形成钝化层。 在钝化层上形成光致抗蚀剂层。 通过蚀刻钝化层形成用于露出一部分漏电极的开口。 在钝化层和光致抗蚀剂层的开口上形成透明导电层。 进行基板的倾斜转印工序，形成与水平面成0〜10度的倾斜范围的基板。 为了通过去除光致抗蚀剂层并将透明导电层与光致抗蚀剂层分离而形成像素电极（191），将剥离器以45至85度的范围注入衬底上。

公开(公告)号：KR1020080001253A

公开(公告)日：2008-01-03

申请号：KR1020060059477

申请日：2006-06-29

Applicant: 삼성전자주식회사

Inventor： 이병진 ,  박홍식 ,  정종현 ,  홍선영 ,  김봉균 ,  신원석

IPC: G02F1/136

CPC classification number: G02F1/136286 ,  H01L27/124 ,  H01L29/786

Abstract: An LCD(Liquid Crystal Display) panel is provided to form a thin film made from silver on a substrate composed with soda-lime glasses, thereby improving adhesion strength between the substrate and the thin film and accordingly improving a profile of the thin film. A substrate(101,111) is composed with soda-lime glasses. Gate lines are formed on the substrate. Data lines cross the gate lines. A TFT(Thin Film Transistor)(148) is connected with the gate lines(146) and the data lines(144). A pixel electrode(142) is connected with the TFT. At least one of the gate line and the data line is composed with at least one conductive layer including silver. The gate line comprises a gate metal layer made from silver, and a barrier layer formed on at least one of upper and lower parts of the gate metal layer.

Abstract translation: 提供LCD（液晶显示器）面板以在由钠钙玻璃构成的基板上形成由银制成的薄膜，从而提高基板和薄膜之间的粘合强度，从而提高薄膜的轮廓。 基体（101,111）由钠钙玻璃构成。 栅极线形成在衬底上。 数据线穿过栅极线。 TFT（薄膜晶体管）（148）与栅极线（146）和数据线（144）连接。 像素电极（142）与TFT连接。 栅极线和数据线中的至少一个由包括银的至少一个导电层构成。 栅极线包括由银制成的栅极金属层和形成在栅极金属层的上部和下部的至少一个上的阻挡层。

公开(公告)号：KR1020070055085A

公开(公告)日：2007-05-30

申请号：KR1020050113399

申请日：2005-11-25

Applicant: 삼성전자주식회사

Inventor： 박홍식 ,  정종현 ,  홍선영 ,  이병진 ,  김봉균 ,  신원석

IPC: H01L29/786

Abstract: 본 발명은 식각공정시 노출된 식각공정의 비대상인 박막을 보호할 수 있는 박막 패터닝 방법 및 이를 이용한 박막트랜지스터 기판의 제조 방법을 제공하는 것이다.
본 발명에 따른 박막 패터닝 방법은 기판 상에 식각계열이 유사한 재질의 제1 및 제2 박막을 순차적으로 도포하는 단계와; 상기 제2 박막 상에 포토레지스트 패턴을 형성하는 단계와; 상기 포토레지스트 패턴을 이용하여 상기 제2 박막을 패터닝하는 단계와; 상기 제2 박막을 패터닝 후 상기 제2 포토레지스트 패턴에 의해 노출된 제2 박막에 반응 억제막을 형성하는 단계와; 상기 포토레지스트 패턴을 이용하여 상기 제1 박막을 패터닝하는 단계를 포함하는 것을 특징으로 한다.

公开(公告)号：KR1020080037343A

公开(公告)日：2008-04-30

申请号：KR1020060104303

申请日：2006-10-26

Applicant: 삼성전자주식회사

Inventor： 신원석 ,  박홍식 ,  정종현 ,  홍선영 ,  김봉균 ,  이병진

IPC: H01L29/786 ,  H01L21/66

CPC classification number: H01L22/12 ,  H01L22/30 ,  H01L22/32

Abstract: A mother substrate for a display device is provided to increase the density of a periphery of a measuring mark in a measuring unit by forming a dummy pattern at the periphery of the measuring mark. A mother substrate for a display device comprises a thin film transistor layer and a measuring unit(202). The thin film transistor layer is formed on a display cell region. The measuring unit is formed at a peripheral region enclosing the display cell region. The measuring unit includes a measuring mark(122c) and a dummy pattern(122b). The measuring mark measures an etch degree of the thin film transistor layer. The dummy pattern is densely formed at a periphery of the measuring mark. The measuring unit includes a first measuring unit, a second measuring unit, and a third measuring unit. The first measuring unit includes a first measuring mark formed of a gate metal layer and a first dummy pattern formed at a periphery of the first measuring mark. The second measuring unit includes a second measuring mark formed of a source metal layer and a second dummy pattern formed at a periphery of the second measuring mark. The third measuring unit includes a third measuring mark formed of a transparent metal layer and a first dummy pattern formed at a periphery of the third measuring mark.

Abstract translation: 提供了一种用于显示装置的母基板，用于通过在测量标记的周边形成虚拟图案来增加测量单元中的测量标记的周边的密度。 用于显示装置的母体衬底包括薄膜晶体管层和测量单元（202）。 薄膜晶体管层形成在显示单元区域上。 测量单元形成在包围显示单元区域的周边区域。 测量单元包括测量标记（122c）和虚拟图案（122b）。 测量标记测量薄膜晶体管层的蚀刻度。 伪图案在测量标记的周围密集地形成。 测量单元包括第一测量单元，第二测量单元和第三测量单元。 第一测量单元包括由栅极金属层形成的第一测量标记和形成在第一测量标记的周边处的第一虚拟图案。 第二测量单元包括由源极金属层形成的第二测量标记和形成在第二测量标记的周边处的第二虚拟图案。 第三测量单元包括由透明金属层形成的第三测量标记和形成在第三测量标记的周边处的第一虚拟图案。

公开(公告)号：KR1020080021863A

公开(公告)日：2008-03-10

申请号：KR1020060084957

申请日：2006-09-05

Applicant: 삼성전자주식회사

Inventor： 신원석 ,  박홍식 ,  정종현 ,  홍선영 ,  김봉균 ,  이병진

IPC: G02F1/136

CPC classification number: G02F1/1362 ,  G02F1/13458 ,  H01L29/786

Abstract: A display substrate and a method of manufacturing the display substrate are provided to form a transparent metal layer on a source metal layer so as to prevent the source metal layer from corrosion. A display substrate includes a base substrate(110), a gate line(GL) formed by sequentially laminating a first transparent layer(122) and a gate metal layer(124) on the base substrate, a source line(DL) which intersects the gate line to define a pixel region and is formed by sequentially laminating a source metal layer(152) and a second transparent metal layer(154), and a pixel electrode(PE) formed using the first transparent metal layer in the pixel region.

Abstract translation: 提供显示基板和制造显示基板的方法，以在源极金属层上形成透明金属层，以防止源极金属层腐蚀。 显示基板包括基底（110），通过在基底基板上依次层叠第一透明层（122）和栅极金属层（124）而形成的栅极线（GL），源极线 栅极线以限定像素区域，并且通过顺序层叠源极金属层（152）和第二透明金属层（154）以及在像素区域中使用第一透明金属层形成的像素电极（PE）形成。