公开(公告)号：KR1020080052920A

公开(公告)日：2008-06-12

申请号：KR1020060124696

申请日：2006-12-08

Applicant: 삼성전자주식회사

Inventor： 이병진 ,  이은국 ,  박홍식 ,  정종현 ,  홍선영 ,  김봉균 ,  신원석 ,  이지선

IPC: G02F1/136 ,  G02F1/1343

CPC classification number: G02F1/136 ,  G02F1/1343 ,  G02F1/1368 ,  G02F2001/13625 ,  G02F2201/123 ,  H01L29/786

Abstract: A method for manufacturing a TFT(Thin Film Transistor) display plate is provided to manufacture a TFT display plate stably having a new pixel electrode which doesn't contain indium. Gate electrodes are formed on a substrate. Source and drain electrodes, which are insulated from the gate electrodes, are formed. Pixel electrodes, connected to the drain electrodes, are formed. In forming the pixel electrodes, a transparent conductive oxidation film which doesn't contain indium is deposited. A photosensitive layer is formed on the transparent conductive oxidation film. Using the photosensitive layer as a mask, etching for the transparent conductive oxidation film is performed. Using a stripper, the photosensitive layer is removed.

Abstract translation: 提供一种用于制造TFT（薄膜晶体管）显示板的方法，以制造稳定地具有不含铟的新像素电极的TFT显示板。 栅电极形成在基板上。 形成与栅电极绝缘的源电极和漏电极。 形成连接到漏电极的像素电极。 在形成像素电极时，沉积不含铟的透明导电氧化膜。 在透明导电氧化膜上形成感光层。 使用感光层作为掩模，进行透明导电氧化膜的蚀刻。 使用汽提器，去除感光层。

公开(公告)号：KR1020080036441A

公开(公告)日：2008-04-28

申请号：KR1020060103036

申请日：2006-10-23

Applicant: 삼성전자주식회사

Inventor： 홍선영 ,  박홍식 ,  정종현 ,  김봉균 ,  신원석 ,  이병진 ,  임태빈

IPC: H01L21/304 ,  H01L21/027

CPC classification number: H01L21/6708 ,  G03F7/423 ,  B05B1/005

Abstract: An apparatus for eliminating a photoresist is provided to efficiently recover a used process liquid and to reuse the recovered process liquid by employing an inclined support for sloping a glass substrate. A chamber(100) includes a space on which a glass substrate(P) is placed, and a nozzle for spraying a process liquid onto the glass substrate. A transfer unit(17) transfers the glass substrate through the chamber. An inclined support(310) is received on the transfer unit and slopes the glass substrate mounted on its upper portion. An ozone reactor injects ozone to the process liquid which is sprayed onto the glass substrate. A degassing unit removes ozone contained in the process liquid. The degassing unit sprays nitrogen. The transfer unit is a conveyer which is horizontally moved. The glass substrate is sequentially passed through a plurality of baths. The chamber is divided into one or more partitions and includes the plurality of baths including the nozzles.

Abstract translation: 提供一种用于消除光致抗蚀剂的装置，以有效地回收使用的处理液体，并通过使用用于倾斜玻璃基板的倾斜支撑来再利用回收的处理液体。 室（100）包括放置玻璃基板（P）的空间和用于将处理液体喷射到玻璃基板上的喷嘴。 传送单元（17）将玻璃基板传送通过室。 倾斜支撑件（310）被容纳在传送单元上并且倾斜安装在其上部的玻璃基板。 臭氧反应器将臭氧注入喷涂在玻璃基板上的工艺液体。 脱气装置除去处理液中含有的臭氧。 脱气装置喷氮。 转印单元是水平移动的输送机。 玻璃基板依次通过多个槽。 腔室被分成一个或多个分隔件，并且包括多个包括喷嘴的浴槽。

公开(公告)号：KR1020080032983A

公开(公告)日：2008-04-16

申请号：KR1020060099474

申请日：2006-10-12

Applicant: 삼성전자주식회사

Inventor： 김봉균 ,  오민석 ,  박홍식 ,  정종현 ,  홍선영 ,  신원석 ,  이병진

IPC: H01L29/786

CPC classification number: G02F1/136286 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908

Abstract: A thin film transistor substrate and a method of manufacturing the same are provided to improve the aperture ratio and transmittance by reducing a CD(Critical Dimension) error. A gate line(30) and a data line(40) are formed at both sides of a gate insulating layer(35). A thin film transistor(50) is formed at an intersection between the gate line and the data line. A pixel electrode(80) is connected to the thin film transistor. An active barrier layer(20) is formed at the gate line and a lower side of a gate electrode of the thin film transistor to reduce a CD error. The thickness of the active barrier layer is 200 to 1000 angstrom. A width of an upper surface of the active barrier layer is equal to a width of a lower surface of the gate line.

Abstract translation: 提供薄膜晶体管基板及其制造方法，以通过减小CD（临界尺寸）误差来提高开口率和透射率。 栅极线（30）和数据线（40）形成在栅极绝缘层（35）的两侧。 薄膜晶体管（50）形成在栅极线与数据线之间的交点处。 像素电极（80）连接到薄膜晶体管。 在薄膜晶体管的栅电极的栅极线和栅电极的下侧形成有源阻挡层（20），以减少CD误差。 有源阻挡层的厚度为200〜1000埃。 有源阻挡层的上表面的宽度等于栅极线的下表面的宽度。

公开(公告)号：KR1020070051561A

公开(公告)日：2007-05-18

申请号：KR1020050109285

申请日：2005-11-15

Applicant: 삼성전자주식회사

Inventor： 이병진 ,  박홍식 ,  홍선영 ,  정종현 ,  김봉균 ,  신원석

IPC: G02F1/13

CPC classification number: G02F1/133308 ,  G02F2001/133322 ,  G02F2201/46

Abstract: 엘시디 라인에서 투명기판을 다룰 때 발생하는 부주의로부터 투명기판의 파손을 방지할 수 있는 투명기판 수납용 카세트가 제공된다. 투명기판 수납용 카세트는 전면과 후면이 개구되어 투명기판을 수납하는 프레임과, 프레임의 양쪽 내측면에 형성되어 투명기판을 지지하며 프레임의 전면 방향으로 턱이 형성되어 투명기판이 미끄러지는 것을 방지하는 받침대와, 프레임의 후면에 설치된 이탈 방지부를 포함한다.
카세트, 이탈 방지부, 받침대, 턱

公开(公告)号：KR1020080070449A

公开(公告)日：2008-07-30

申请号：KR1020070008594

申请日：2007-01-26

Applicant: 삼성전자주식회사

Inventor： 김봉균 ,  박홍식 ,  정종현 ,  홍선영 ,  신원석 ,  이병진 ,  이지선

IPC: G02F1/13

CPC classification number: H01L21/67075 ,  G02F1/1303 ,  H01L21/6708 ,  H01L21/68 ,  H01L21/68714

Abstract: A wet etching apparatus and an etching method using the same are provided to detect an etching end point in various position by uniformly injecting etching liquid onto a substrate. A wet etching apparatus(10) includes a chamber(100), a conveyer(110), a movable support(120), a nozzle(112,114,116) and an etching end point detection device(130). The chamber has a space in which a glass substrate is positioned in the inside thereof. The conveyer moves the glass substrate in the inside of the chamber. The movable support is mounted on the glass substrate and moves the glass substrate in a direction different from the moving direction of the movable support. The nozzle is positioned in the inside of the chamber and injects etching liquid onto the glass substrate. And the etching end point detection device detects an etching end point in the chamber.

Abstract translation: 提供一种湿式蚀刻装置和使用该方法的蚀刻方法，通过将蚀刻液均匀地注入到基板上来检测各种位置的蚀刻终点。 湿蚀刻装置（10）包括腔室（100），输送器（110），可移动支撑件（120），喷嘴（112,114,116）和蚀刻终点检测装置（130）。 该室具有玻璃基板位于其内部的空间。 输送机将玻璃基板移动到室内。 可移动支撑件安装在玻璃基板上，并使玻璃基板沿与可动支架的移动方向不同的方向移动。 喷嘴位于腔室的内部，并将蚀刻液体注入到玻璃基底上。 并且蚀刻终点检测装置检测室中的蚀刻终点。

公开(公告)号：KR1020080049273A

公开(公告)日：2008-06-04

申请号：KR1020060119665

申请日：2006-11-30

Applicant: 삼성전자주식회사

Inventor： 이병진 ,  박홍식 ,  황보상우 ,  정종현 ,  홍선영 ,  김봉균 ,  신원석

IPC: C03C15/00

CPC classification number: C03C15/00 ,  C09K13/04

Abstract: A treatment method of glass substrate is provided to obtain improved glass substrate economically by employing conventional etchant. A treatment method of glass substrate comprises steps of: preparing etchant; and treating glass substrate with the prepared etchant. The glass substrate is soda-lime glass substrate, and the treatment is carried out in a process comprising: pouring the etchant in a vessel; and soaking the glass substrate in the etchant. The etchant is maintained at 40-50deg.C and the glass substrate is soaked in the etchant for 3-30 minutes. The etchant comprises: phosphoric acid, nitric acid, acetic acid, additive and deionized water; sulfuric acid, additive and deionized water; hydrochloric acid, nitric acid and deionized water; or Ce(NH4)2(NO3)6, nitric acid and deionized water.

Abstract translation: 提供玻璃基板的处理方法，通过使用常规的蚀刻剂经济地获得改进的玻璃基板。 玻璃基板的处理方法包括以下步骤：制备蚀刻剂; 并用制备的蚀刻剂处理玻璃基板。 玻璃基板是钠钙玻璃基板，处理过程包括：将蚀刻剂倾倒在容器中; 并将玻璃基板浸入蚀刻剂中。 将蚀刻剂保持在40-50℃，将玻璃基材浸入蚀刻剂中3-30分钟。 蚀刻剂包括：磷酸，硝酸，乙酸，添加剂和去离子水; 硫酸，添加剂和去离子水; 盐酸，硝酸和去离子水; 或Ce（NH 4）2（NO 3）6，硝酸和去离子水。

公开(公告)号：KR1020080045966A

公开(公告)日：2008-05-26

申请号：KR1020060115295

申请日：2006-11-21

Applicant: 삼성전자주식회사

Inventor： 신원석 ,  박홍식 ,  정종현 ,  홍선영 ,  김봉균 ,  이병진

IPC: G02F1/136

CPC classification number: G02F1/1343 ,  G02F1/1339 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13625 ,  G02F2001/136295 ,  G02F2201/123

Abstract: A thin film transistor substrate and a method for manufacturing the same are provided to reduce the number of etching masks and reduce a defect generated in forming pixel electrodes by avoiding lift-off. A thin film transistor substrate(100) includes gate wiring formed on an insulating substrate(10), including gate lines(22_1,22_2), gate electrodes(26_1,26_2), and maintenance electrodes(27_1,27_2) made of a first conductive material for gate wiring and a second conductive material for gate wiring, and gate ends(24_1) made of a first conductive material for gate wiring. Data wiring includes data lines(62) crossing the gate lines, and source and drain electrodes(65,66) formed on the gate electrodes, separated from each other. Pixel electrodes(82) are electrically connected with the drain electrodes. Auxiliary gate ends(84) are electrically connected with the gate ends, made of the same material as the pixel electrodes.

Abstract translation: 提供薄膜晶体管基板及其制造方法，以减少蚀刻掩模的数量，并通过避免剥离来减少在形成像素电极时产生的缺陷。 薄膜晶体管基板（100）包括形成在绝缘基板（10）上的栅极布线，包括栅极线（22_1,22_2），栅极电极（26_1,26_2）以及维修电极（27_1,27_2），其由第一导电 用于栅极布线的材料和用于栅极布线的第二导电材料，以及由用于栅极布线的第一导电材料制成的栅极端部（24_1）。 数据布线包括与栅极线交叉的数据线（62）以及形成在栅电极上的彼此分离的源极和漏极（65,66）。 像素电极（82）与漏电极电连接。 辅助栅极端（84）与栅极端电连接，栅极端部由与像素电极相同的材料制成。

公开(公告)号：KR1020080021952A

公开(公告)日：2008-03-10

申请号：KR1020060085212

申请日：2006-09-05

Applicant: 삼성전자주식회사

Inventor： 이병진 ,  정종현 ,  박홍식 ,  홍선영 ,  김봉균 ,  신원석

IPC: H01L29/786 ,  G02F1/136

CPC classification number: H01L27/1288 ,  G02F1/13439 ,  G02F1/136286 ,  H01L27/124 ,  H01L29/66757

Abstract: A method for manufacturing a thin film transistor display panel is provided to decrease the number of manufacturing processes and reduce a manufacturing cost, by forming pixel electrodes along with the gate lines using one mask. Undercut portions of photoresist portions are removed to form photoresist portions having reduced thicknesses and boundaries that are the same as those of underlying data lines(171) and drain electrodes(175), by using an etch-back process. Exposed impurity semiconductor layers are removed using the photoresist portions as an etch mask to form ohmic contacts(163a,165a), and then the photoresist portions are removed. The boundaries of the data lines and drain electrodes are the same as those of the ohmic contacts and a semiconductors(154a). A first insulating layer and a second insulating layer are deposited and etched to form an insulating pattern including column spacers and a passivation layer(180).

Abstract translation: 提供一种制造薄膜晶体管显示面板的方法，通过使用一个掩模与栅极线一起形成像素电极来减少制造工艺的数量并降低制造成本。 去除光致抗蚀剂部分的底切部分以通过使用回蚀工艺形成具有与底层数据线（171）和漏电极（175）相同的厚度和边界的光致抗蚀剂部分。 使用光致抗蚀剂部分作为蚀刻掩模去除曝光的杂质半导体层以形成欧姆接触（163a，165a），然后除去光致抗蚀剂部分。 数据线和漏极的边界与欧姆接触和半导体（154a）的边界相同。 沉积和蚀刻第一绝缘层和第二绝缘层以形成包括柱间隔物和钝化层（180）的绝缘图案。

公开(公告)号：KR1020070060174A

公开(公告)日：2007-06-13

申请号：KR1020050119155

申请日：2005-12-08

Applicant: 삼성전자주식회사

Inventor： 박홍식 ,  정종현 ,  김봉균 ,  이병진 ,  신원석 ,  홍선영

IPC: G02F1/136

CPC classification number: G02F1/1343 ,  G02F1/136 ,  G02F2201/123 ,  H01L29/786

Abstract: A pixel electrode, a thin film transistor substrate including the same, and a method for manufacturing a semiconductor substrate are provided to prevent light leakage by forming a pixel electrode having conductivity and transparency depending on a voltage being applied. A thin film transistor is formed on a substrate(101). A pixel electrode is connected to the thin film transistor and is formed of a polymer having transparency and conductivity, wherein at least one of transparency and conductivity is changed in accordance with a voltage applied through the thin film transistor. The pixel electrode is formed of one of PEDOT, PProDOT-(CH3)2, and PSS. A dopant is added to the pixel electrode, and is formed of metal such as Au, Pt, Ag, and Cu or a negative ion such as Cl-, ClO4-, and NO3-.

Abstract translation: 提供像素电极，包括该像素电极的薄膜晶体管基板和用于制造半导体基板的方法，以通过根据所施加的电压形成具有导电性和透明度的像素电极来防止漏光。 薄膜晶体管形成在基板（101）上。 像素电极连接到薄膜晶体管，并且由具有透明度和导电性的聚合物形成，其中透明度和导电率中的至少一个根据通过薄膜晶体管施加的电压而改变。 像素电极由PEDOT，PProDOT-（CH 3）2和PSS中的一种形成。 掺杂剂添加到像素电极中，并且由诸如Au，Pt，Ag和Cu的金属或诸如Cl - ，ClO 4 - 和NO 3 - 的负离子形成。

公开(公告)号：KR1020070052419A

公开(公告)日：2007-05-22

申请号：KR1020050110035

申请日：2005-11-17

Applicant: 삼성전자주식회사

Inventor： 김봉균 ,  박홍식 ,  정종현 ,  홍선영 ,  신원석 ,  이병진

IPC: H01L21/304

Abstract: 본 발명은 공정 용액 공급장치를 제공하며, 상기 공급장치는 기판이 안착되어 이송되는 이송기와, 상기 기판에 공정 용액을 분사하며 일방향을 따라 규칙적으로 배치된 복수의 분사기들과 상기 기판의 존부를 식별하는 적어도 하나의 감지센서를 포함한다.
본 발명에 따르면, 감지센서에서 기판을 감지하는 순간 상기 감지센서로부터 일정 영역내의 분사기만이 작동되고 나머지는 작동되지 않는다. 따라서 일률적으로 모든 분사기가 작동되는 경우에 비하여, 불필요하게 공정 용액이 낭비되는 것을 방지할 수 있다.
공정 용액, 포토레지스트, 순수