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公开(公告)号：KR1020080037343A
公开(公告)日：2008-04-30
申请号：KR1020060104303
申请日：2006-10-26
Applicant: 삼성전자주식회사
IPC: H01L29/786 , H01L21/66
Abstract: A mother substrate for a display device is provided to increase the density of a periphery of a measuring mark in a measuring unit by forming a dummy pattern at the periphery of the measuring mark. A mother substrate for a display device comprises a thin film transistor layer and a measuring unit(202). The thin film transistor layer is formed on a display cell region. The measuring unit is formed at a peripheral region enclosing the display cell region. The measuring unit includes a measuring mark(122c) and a dummy pattern(122b). The measuring mark measures an etch degree of the thin film transistor layer. The dummy pattern is densely formed at a periphery of the measuring mark. The measuring unit includes a first measuring unit, a second measuring unit, and a third measuring unit. The first measuring unit includes a first measuring mark formed of a gate metal layer and a first dummy pattern formed at a periphery of the first measuring mark. The second measuring unit includes a second measuring mark formed of a source metal layer and a second dummy pattern formed at a periphery of the second measuring mark. The third measuring unit includes a third measuring mark formed of a transparent metal layer and a first dummy pattern formed at a periphery of the third measuring mark.
Abstract translation: 提供了一种用于显示装置的母基板，用于通过在测量标记的周边形成虚拟图案来增加测量单元中的测量标记的周边的密度。 用于显示装置的母体衬底包括薄膜晶体管层和测量单元（202）。 薄膜晶体管层形成在显示单元区域上。 测量单元形成在包围显示单元区域的周边区域。 测量单元包括测量标记（122c）和虚拟图案（122b）。 测量标记测量薄膜晶体管层的蚀刻度。 伪图案在测量标记的周围密集地形成。 测量单元包括第一测量单元，第二测量单元和第三测量单元。 第一测量单元包括由栅极金属层形成的第一测量标记和形成在第一测量标记的周边处的第一虚拟图案。 第二测量单元包括由源极金属层形成的第二测量标记和形成在第二测量标记的周边处的第二虚拟图案。 第三测量单元包括由透明金属层形成的第三测量标记和形成在第三测量标记的周边处的第一虚拟图案。
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公开(公告)号：KR1020080021863A
公开(公告)日：2008-03-10
申请号：KR1020060084957
申请日：2006-09-05
Applicant: 삼성전자주식회사
IPC: G02F1/136
CPC classification number: G02F1/1362 , G02F1/13458 , H01L29/786
Abstract: A display substrate and a method of manufacturing the display substrate are provided to form a transparent metal layer on a source metal layer so as to prevent the source metal layer from corrosion. A display substrate includes a base substrate(110), a gate line(GL) formed by sequentially laminating a first transparent layer(122) and a gate metal layer(124) on the base substrate, a source line(DL) which intersects the gate line to define a pixel region and is formed by sequentially laminating a source metal layer(152) and a second transparent metal layer(154), and a pixel electrode(PE) formed using the first transparent metal layer in the pixel region.
Abstract translation: 提供显示基板和制造显示基板的方法，以在源极金属层上形成透明金属层，以防止源极金属层腐蚀。 显示基板包括基底（110），通过在基底基板上依次层叠第一透明层（122）和栅极金属层（124）而形成的栅极线（GL），源极线 栅极线以限定像素区域，并且通过顺序层叠源极金属层（152）和第二透明金属层（154）以及在像素区域中使用第一透明金属层形成的像素电极（PE）形成。
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公开(公告)号：KR1020080052920A
公开(公告)日：2008-06-12
申请号：KR1020060124696
申请日：2006-12-08
Applicant: 삼성전자주식회사
IPC: G02F1/136 , G02F1/1343
CPC classification number: G02F1/136 , G02F1/1343 , G02F1/1368 , G02F2001/13625 , G02F2201/123 , H01L29/786
Abstract: A method for manufacturing a TFT(Thin Film Transistor) display plate is provided to manufacture a TFT display plate stably having a new pixel electrode which doesn't contain indium. Gate electrodes are formed on a substrate. Source and drain electrodes, which are insulated from the gate electrodes, are formed. Pixel electrodes, connected to the drain electrodes, are formed. In forming the pixel electrodes, a transparent conductive oxidation film which doesn't contain indium is deposited. A photosensitive layer is formed on the transparent conductive oxidation film. Using the photosensitive layer as a mask, etching for the transparent conductive oxidation film is performed. Using a stripper, the photosensitive layer is removed.
Abstract translation: 提供一种用于制造TFT（薄膜晶体管）显示板的方法，以制造稳定地具有不含铟的新像素电极的TFT显示板。 栅电极形成在基板上。 形成与栅电极绝缘的源电极和漏电极。 形成连接到漏电极的像素电极。 在形成像素电极时，沉积不含铟的透明导电氧化膜。 在透明导电氧化膜上形成感光层。 使用感光层作为掩模，进行透明导电氧化膜的蚀刻。 使用汽提器，去除感光层。
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公开(公告)号：KR100783551B1
公开(公告)日：2007-12-07
申请号：KR1020060063427
申请日：2006-07-06
Applicant: 삼성전자주식회사
IPC: H04B1/40
CPC classification number: G06F3/0482 , G06F3/0481 , H04M1/72561 , H04M1/72586 , H04M2250/60
Abstract: A method for using a history function in a mobile terminal is provided to execute recently used contents more easily again by displaying a list of contents through the input of the Send key so as to select and execute desired contents. If a user selects desired contents and inputs a contents execution key, a control part runs and displays the selected contents(S110-S130). Then the control part judges whether the contents are executed during more than an effective time(S140). In case the contents are executed during more than the effective time, the control part extracts contents information from the contents(S150). The control part compares the extracted contents information with the contents information stored in a HDB(History DB) and judges whether duplicated information has been extracted(S160). In case the same record as the extracted contents information doesn't exist in the HDB, the control part adds the extracted contents information to the HDB(S170). Afterwards, if the user inputs the Send key(S210), the control part displays a contents list using the contents information stored in the HDB(S220).
Abstract translation: 提供一种在移动终端中使用历史功能的方法，通过通过发送键的输入显示内容列表，更容易地再次执行最近使用的内容，以便选择并执行所需内容。 如果用户选择所需内容并输入内容执行键，则控制部分运行并显示所选择的内容（S110-S130）。 然后，控制部判断在多于有效时间内是否执行内容（S140）。 在超过有效时间执行内容的情况下，控制部分从内容中提取内容信息（S150）。 控制部分将提取的内容信息与存储在HDB（历史DB）中的内容信息进行比较，并判断是否提取了复制信息（S160）。 在HDB中不存在与提取的内容信息相同的记录的情况下，控制部分将所提取的内容信息添加到HDB（S170）。 之后，如果用户输入发送键（S210），则控制部分使用存储在HDB中的内容信息来显示内容列表（S220）。
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公开(公告)号：KR1020140071118A
公开(公告)日：2014-06-11
申请号：KR1020120139094
申请日：2012-12-03
Applicant: 삼성전자주식회사
CPC classification number: G06F3/0482 , G06F3/04883 , G06F3/04886 , G06F2203/04101 , G06F3/03545 , G06F3/0412 , G06F3/0416 , G06F3/0488 , G06F2203/04106 , G06F2203/04803 , G06F2203/04807 , H04B1/40
Abstract: The present invention relates to a method and an electronic device for displaying a virtual button. The method for displaying a virtual button in the electronic device comprises the steps of: detecting a pen use event; and displaying at least one virtual button performing the same function as that of buttons provided on the electronic device, on a display screen, when the pen use event is detected. The button provided on the electronic device comprises at least one of a physical button and an optical button, thereby enabling a user to control the function of all buttons provided on the electronic device while controlling a display device of the electronic device using only an electronic pen without using a finger.
Abstract translation: 本发明涉及一种用于显示虚拟按钮的方法和电子设备。 用于在电子设备中显示虚拟按钮的方法包括以下步骤：检测笔使用事件; 并且当检测到笔使用事件时，在显示屏幕上显示执行与设置在电子设备上的按钮相同功能的至少一个虚拟按钮。 设置在电子设备上的按钮包括物理按钮和光学按钮中的至少一个，从而使用户能够控制电子设备上提供的所有按钮的功能，同时仅使用电子笔来控制电子设备的显示设备 不用手指。
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Patent Agency Ranking
公开(公告)号：KR1020080070449A
公开(公告)日：2008-07-30
申请号：KR1020070008594
申请日：2007-01-26
Applicant: 삼성전자주식회사
IPC: G02F1/13
CPC classification number: H01L21/67075 , G02F1/1303 , H01L21/6708 , H01L21/68 , H01L21/68714
Abstract: A wet etching apparatus and an etching method using the same are provided to detect an etching end point in various position by uniformly injecting etching liquid onto a substrate. A wet etching apparatus(10) includes a chamber(100), a conveyer(110), a movable support(120), a nozzle(112,114,116) and an etching end point detection device(130). The chamber has a space in which a glass substrate is positioned in the inside thereof. The conveyer moves the glass substrate in the inside of the chamber. The movable support is mounted on the glass substrate and moves the glass substrate in a direction different from the moving direction of the movable support. The nozzle is positioned in the inside of the chamber and injects etching liquid onto the glass substrate. And the etching end point detection device detects an etching end point in the chamber.
Abstract translation: 提供一种湿式蚀刻装置和使用该方法的蚀刻方法，通过将蚀刻液均匀地注入到基板上来检测各种位置的蚀刻终点。 湿蚀刻装置（10）包括腔室（100），输送器（110），可移动支撑件（120），喷嘴（112,114,116）和蚀刻终点检测装置（130）。 该室具有玻璃基板位于其内部的空间。 输送机将玻璃基板移动到室内。 可移动支撑件安装在玻璃基板上，并使玻璃基板沿与可动支架的移动方向不同的方向移动。 喷嘴位于腔室的内部，并将蚀刻液体注入到玻璃基底上。 并且蚀刻终点检测装置检测室中的蚀刻终点。
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公开(公告)号：KR1020080049273A
公开(公告)日：2008-06-04
申请号：KR1020060119665
申请日：2006-11-30
Applicant: 삼성전자주식회사
IPC: C03C15/00
Abstract: A treatment method of glass substrate is provided to obtain improved glass substrate economically by employing conventional etchant. A treatment method of glass substrate comprises steps of: preparing etchant; and treating glass substrate with the prepared etchant. The glass substrate is soda-lime glass substrate, and the treatment is carried out in a process comprising: pouring the etchant in a vessel; and soaking the glass substrate in the etchant. The etchant is maintained at 40-50deg.C and the glass substrate is soaked in the etchant for 3-30 minutes. The etchant comprises: phosphoric acid, nitric acid, acetic acid, additive and deionized water; sulfuric acid, additive and deionized water; hydrochloric acid, nitric acid and deionized water; or Ce(NH4)2(NO3)6, nitric acid and deionized water.
Abstract translation: 提供玻璃基板的处理方法，通过使用常规的蚀刻剂经济地获得改进的玻璃基板。 玻璃基板的处理方法包括以下步骤：制备蚀刻剂; 并用制备的蚀刻剂处理玻璃基板。 玻璃基板是钠钙玻璃基板，处理过程包括：将蚀刻剂倾倒在容器中; 并将玻璃基板浸入蚀刻剂中。 将蚀刻剂保持在40-50℃，将玻璃基材浸入蚀刻剂中3-30分钟。 蚀刻剂包括：磷酸，硝酸，乙酸，添加剂和去离子水; 硫酸，添加剂和去离子水; 盐酸，硝酸和去离子水; 或Ce（NH 4）2（NO 3）6，硝酸和去离子水。
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公开(公告)号：KR1020080045966A
公开(公告)日：2008-05-26
申请号：KR1020060115295
申请日：2006-11-21
Applicant: 삼성전자주식회사
IPC: G02F1/136
CPC classification number: G02F1/1343 , G02F1/1339 , G02F1/136286 , G02F1/1368 , G02F2001/13625 , G02F2001/136295 , G02F2201/123
Abstract: A thin film transistor substrate and a method for manufacturing the same are provided to reduce the number of etching masks and reduce a defect generated in forming pixel electrodes by avoiding lift-off. A thin film transistor substrate(100) includes gate wiring formed on an insulating substrate(10), including gate lines(22_1,22_2), gate electrodes(26_1,26_2), and maintenance electrodes(27_1,27_2) made of a first conductive material for gate wiring and a second conductive material for gate wiring, and gate ends(24_1) made of a first conductive material for gate wiring. Data wiring includes data lines(62) crossing the gate lines, and source and drain electrodes(65,66) formed on the gate electrodes, separated from each other. Pixel electrodes(82) are electrically connected with the drain electrodes. Auxiliary gate ends(84) are electrically connected with the gate ends, made of the same material as the pixel electrodes.
Abstract translation: 提供薄膜晶体管基板及其制造方法，以减少蚀刻掩模的数量，并通过避免剥离来减少在形成像素电极时产生的缺陷。 薄膜晶体管基板（100）包括形成在绝缘基板（10）上的栅极布线，包括栅极线（22_1,22_2），栅极电极（26_1,26_2）以及维修电极（27_1,27_2），其由第一导电 用于栅极布线的材料和用于栅极布线的第二导电材料，以及由用于栅极布线的第一导电材料制成的栅极端部（24_1）。 数据布线包括与栅极线交叉的数据线（62）以及形成在栅电极上的彼此分离的源极和漏极（65,66）。 像素电极（82）与漏电极电连接。 辅助栅极端（84）与栅极端电连接，栅极端部由与像素电极相同的材料制成。
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公开(公告)号：KR1020080021952A
公开(公告)日：2008-03-10
申请号：KR1020060085212
申请日：2006-09-05
Applicant: 삼성전자주식회사
IPC: H01L29/786 , G02F1/136
CPC classification number: H01L27/1288 , G02F1/13439 , G02F1/136286 , H01L27/124 , H01L29/66757
Abstract: A method for manufacturing a thin film transistor display panel is provided to decrease the number of manufacturing processes and reduce a manufacturing cost, by forming pixel electrodes along with the gate lines using one mask. Undercut portions of photoresist portions are removed to form photoresist portions having reduced thicknesses and boundaries that are the same as those of underlying data lines(171) and drain electrodes(175), by using an etch-back process. Exposed impurity semiconductor layers are removed using the photoresist portions as an etch mask to form ohmic contacts(163a,165a), and then the photoresist portions are removed. The boundaries of the data lines and drain electrodes are the same as those of the ohmic contacts and a semiconductors(154a). A first insulating layer and a second insulating layer are deposited and etched to form an insulating pattern including column spacers and a passivation layer(180).
Abstract translation: 提供一种制造薄膜晶体管显示面板的方法，通过使用一个掩模与栅极线一起形成像素电极来减少制造工艺的数量并降低制造成本。 去除光致抗蚀剂部分的底切部分以通过使用回蚀工艺形成具有与底层数据线（171）和漏电极（175）相同的厚度和边界的光致抗蚀剂部分。 使用光致抗蚀剂部分作为蚀刻掩模去除曝光的杂质半导体层以形成欧姆接触（163a，165a），然后除去光致抗蚀剂部分。 数据线和漏极的边界与欧姆接触和半导体（154a）的边界相同。 沉积和蚀刻第一绝缘层和第二绝缘层以形成包括柱间隔物和钝化层（180）的绝缘图案。
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