노멀 섹션 워드 라인 단위로 결함 셀을 리페어 할 수 있는 리페어 장치 및 방법
    11.
    发明公开
    노멀 섹션 워드 라인 단위로 결함 셀을 리페어 할 수 있는 리페어 장치 및 방법 无效
    根据单位部分字线修复故障单元的修复设备和方法)

    公开(公告)号:KR1020080006113A

    公开(公告)日:2008-01-16

    申请号:KR1020060064856

    申请日:2006-07-11

    CPC classification number: G11C29/812 G11C29/806 G11C29/808

    Abstract: A repair device capable of repairing a fail cell by section word line unit and a method thereof are provided to minimize the increase of layout area of a semiconductor memory device, as increasing repair efficiency for the fail cell. According to a semiconductor memory device, an address comparison part determines to enable a redundancy main word line corresponding to a main address, by comparing the main address of a fail address indicating the position of a fail cell with a main address of an external address. A repair part(140) repairs the fail cell, by enabling a redundancy section word line corresponding to a section address of the external address among redundancy section word lines connected to the redundancy main word line. Each redundancy section word line corresponds to a section word line using a different main word line of a memory cell array as an upper word line.

    Abstract translation: 提供能够按部分字线单元修复故障单元的修复设备及其方法,以使半导体存储器件的布局面积的增加最小化,因为故障单元的修复效率提高。 根据半导体存储器件,地址比较部分通过将指示故障单元的位置的失败地址的主地址与外部地址的主地址进行比较来确定能够对应于主地址的冗余主字线。 通过在与冗余主字线连接的冗余部分字线中启用与外部地址的部分地址相对应的冗余部分字线,修复部分(140)修复故障单元。 每个冗余部分字线对应于使用存储单元阵列的不同主字线作为上字线的部分字线。

    유기 박막 트랜지스터, 이의 제조방법 및 이를 포함하는 전자소자
    12.
    发明授权
    유기 박막 트랜지스터, 이의 제조방법 및 이를 포함하는 전자소자 有权
    有机薄膜晶体管及其制造方法,以及包括其的电子设备

    公开(公告)号:KR101831857B1

    公开(公告)日:2018-02-26

    申请号:KR1020110004137

    申请日:2011-01-14

    Abstract: 기판, 게이트전극, 게이트절연막, 유기반도체층및 소스/드레인전극을포함하고상기소스/드레인전극과유기반도체층의계면에하기화학식 1의화합물을포함하는자기조립단분자막(self-assembled monolayer)을포함하는유기박막트랜지스터가제공된다. [화학식 1]상기화학식 1의각 치환기의정의는명세서에기재된바와같다.

    Abstract translation: 包括自组装单层(自组装单层),以在基板上,一个栅电极,栅绝缘膜,包括有机半导体层和源/漏电极与源电极/漏电极和所述有机半导体层的表面包括下式的化合物 提供有机薄膜晶体管。 式(1)的取代基的定义如说明书中所述。

    전력 증폭 장치 및 방법
    13.
    发明公开
    전력 증폭 장치 및 방법 审中-实审
    用于功率放大的装置和方法

    公开(公告)号:KR1020150040088A

    公开(公告)日:2015-04-14

    申请号:KR1020130118661

    申请日:2013-10-04

    Inventor: 임채만 유병욱

    Abstract: 본개시의다양한실시예는전력증폭기의바이어스전압을효율적으로제어하기위한전력증폭장치및 방법에관한것으로, 전자장치에있어서, 기저대역신호를포락선신호로변환하는기저대역신호처리기, 상기기저대역신호에기반하여, RF 신호를증폭하는전력증폭기, 상기포락선신호에기반하여, 입력전압을상기전력증폭기의바이어스전압으로변조하는전원변조기, 상기기저대역신호의특성에따라, 상기전원변조기의동작을제어하는전원제어부를포함할수 있다. 다양한다른실시예들이가능하다.

    Abstract translation: 本发明的一个实施例涉及一种用于功率放大的装置和方法,以便有效地控制功率放大器的偏置电压,包括:基带信号处理器将基带信号转换为电子设备中的包络信号,功率放大器,用于 基于所述基带信号放大RF信号,以及功率调制器,用于根据所述包络信号将输入电压调制到所述功率放大器的偏置电压;以及功率控制单元,用于根据所述包络信号控制所述功率调制器的操作 基带信号的特性。 各种其他实施例也是可用的。

    휴대용 단말기의 측면 키
    14.
    发明公开
    휴대용 단말기의 측면 키 无效
    便携式终端侧面

    公开(公告)号:KR1020130096078A

    公开(公告)日:2013-08-29

    申请号:KR1020120017616

    申请日:2012-02-21

    Abstract: PURPOSE: A side key of a portable terminal is provided to facilitate an assembly process by using a key cap combined with the outer surface of a combination part. CONSTITUTION: A combination part (213) is inserted into a through hole. The through hole is formed on the outer surface of a terminal (21). At least one pair of hooks (215a,215b) is formed on the outer surface of the combination part. The hooks are made of elastic materials. The hooks are combined with the inner wall of the terminal.

    Abstract translation: 目的:提供便携式终端的侧键,以通过使用与组合部分的外表面结合的键帽来促进组装过程。 构成:组合部分(213)插入到通孔中。 通孔形成在端子(21)的外表面上。 在组合部分的外表面上形成至少一对钩(215a,215b)。 钩子由弹性材料制成。 钩子与终端的内壁结合。

    유기 보호막 조성물 및 이로부터 제조되는 유기 보호막을 포함하는 트랜지스터 및 전자소자
    15.
    发明公开
    유기 보호막 조성물 및 이로부터 제조되는 유기 보호막을 포함하는 트랜지스터 및 전자소자 审中-实审
    有机钝化层组合物和晶体管及电子器件,其中包括钝化层

    公开(公告)号:KR1020120129830A

    公开(公告)日:2012-11-28

    申请号:KR1020120053111

    申请日:2012-05-18

    Abstract: PURPOSE: An organic protective layer composition is provided to provide a protective layer capable of maintaining excellent reliability of an element in case exposed to bias stress for long time. CONSTITUTION: An organic protective layer composition comprises oligomer or polymer comprising a unit structure indicated in chemical formula 1 and 2, and a crosslinking agent. In chemical formula 1, Cy1 is a functional group selected from a substituted or unsubstituted C4-20 carbon ring, a substituted or unsubstituted C6-20 monocyclic aromatic group, a substituted or unsubstituted C2-20 fused polycyclic aromatic group and C2-20 non-condensed polycyclic aromatic group. In chemical formula 2, Cy2 is a substituted or unsubstituted C6-40 arylene, a substituted or unsubstituted C3-40 heteroarylene, substituted or unsubstituted C5-40 cycloalkylene, or a substituted or unsubstituted C5-40 heterocycloalkylne group, and k is an integer from 2 or more.

    Abstract translation: 目的:提供一种有机保护层组合物,以提供在长时间暴露于偏压应力的情况下能够保持元件的优异可靠性的保护层。 构成:有机保护层组合物包含包含化学式1和2所示单元结构的低聚物或聚合物和交联剂。 在化学式1中,Cy1是选自取代或未取代的C4-20碳环,取代或未取代的C6-20单环芳基,取代或未取代的C2-20稠合多环芳基和C2-20非环状芳香族基团的官能团, 缩合多环芳基。 在化学式2中,Cy2是取代或未取代的C 6-40亚芳基,取代或未取代的C 3-40亚杂芳基,取代或未取代的C 5-40亚环烷基,或取代或未取代的C 5-40杂环烷基,k是 2以上。

    접이식 컴퓨팅 장치 및 디스플레이부를 세우는 방법
    16.
    发明公开
    접이식 컴퓨팅 장치 및 디스플레이부를 세우는 방법 审中-实审
    可折叠计算装置和用于显示显示单元的方法

    公开(公告)号:KR1020140075411A

    公开(公告)日:2014-06-19

    申请号:KR1020120143714

    申请日:2012-12-11

    Inventor: 유병욱 김태완

    Abstract: A foldable computing device according to the present invention comprises: a display unit including a touchscreen; a first body which is rotatably installed on one end of the display unit; and a second body which is rotatably installed on one end of the first body, on the opposite side of the display unit and includes a keyboard. Accordingly, the display unit can be supported by the second body as the second body is rotated around the first body when the first body is rotated to make the rear surface of the first body adjacent to the rear surface of the display unit.

    Abstract translation: 根据本发明的可折叠计算装置包括:显示单元,包括触摸屏; 第一主体,其可旋转地安装在所述显示单元的一端; 以及第二主体,其被可旋转地安装在所述第一主体的一端上,在所述显示单元的相对侧并且包括键盘。 因此,当第一主体旋转以使第一主体的后表面与显示单元的后表面相邻时,第二主体围绕第一主体旋转,显示单元可被第二主体支撑。

    박막 트랜지스터 및 그 제조 방법
    17.
    发明公开
    박막 트랜지스터 및 그 제조 방법 有权
    薄膜晶体管及其制造方法

    公开(公告)号:KR1020100030995A

    公开(公告)日:2010-03-19

    申请号:KR1020080090007

    申请日:2008-09-11

    CPC classification number: H01L29/78609 H01L29/78618 H01L29/458

    Abstract: PURPOSE: A method for manufacturing a thin film transistor by reducing off current of high drain area is provided. CONSTITUTION: A thin film transistor comprises a gate(11), gate insulation layer(12), channel(13), intermediate layer(14), source and drain(16a,16b). The gate is formed on one are of a substrate. The gate insulation layer is formed on the substrate and gate. The channel is formed on an area corresponding to the gate on the gate insulation layer. The intermediate layer is formed at both upper sides of the channel and on the gate insulation layer.

    Abstract translation: 目的:提供一种通过减少高漏区电流来制造薄膜晶体管的方法。 构成:薄膜晶体管包括栅极(11),栅极绝缘层(12),沟道(13),中间层(14),源极和漏极(16a,16b)。 栅极形成在一个基板上。 栅极绝缘层形成在基板和栅极上。 沟道形成在与栅极绝缘层上的栅极对应的区域上。 中间层形成在通道的两个上侧和栅极绝缘层上。

    원자층 증착 장치와 이를 이용한 원자층 증착 방법
    18.
    发明公开
    원자층 증착 장치와 이를 이용한 원자층 증착 방법 无效
    用于原子层沉积的装置和使用其的原子层沉积的方法

    公开(公告)号:KR1020090122727A

    公开(公告)日:2009-12-01

    申请号:KR1020080048676

    申请日:2008-05-26

    CPC classification number: C23C16/45565 C23C16/45551 C23C16/45574

    Abstract: PURPOSE: An atomic layer deposition apparatus and an atomic layer deposition method using the same are provided to rapidly deposit a film of desired thickness on a substrate by injecting a first source gas, a first purge gas, a second source gas, and a second purge gas at the same time while the substrate or a shower head is moved. CONSTITUTION: A substrate supporting bar(120) is installed inside a reaction chamber, and supports a substrate(10). A shower head(130) includes a nozzle set capable of injecting a first source gas, a second source gas, and a purge gas on the substrate at the same time. At least one among the substrate supporting bar and the shower head is movably installed according to a first direction. A first source gas injection nozzle(31) is arranged in a first row. A purge gas injection nozzle(41,42) is arranged in a second row. A second source gas injection nozzle(32) is arranged in a third row.

    Abstract translation: 目的:提供一种原子层沉积装置和使用其的原子层沉积方法,以通过注入第一源气体,第一吹扫气体,第二源气体和第二吹扫来快速沉积在衬底上的所需厚度的膜 同时在衬底或淋浴头移动的同时气体。 构成:衬底支撑杆(120)安装在反应室内,并支撑衬底(10)。 淋浴头(130)包括能够同时在基板上喷射第一源气体,第二源气体和吹扫气体的喷嘴组。 基板支撑杆和淋浴头中的至少一个根据第一方向可移动地安装。 第一源气体喷射喷嘴(31)布置在第一排中。 吹扫气体注入喷嘴(41,42)布置在第二排中。 第二源气体喷射喷嘴(32)布置在第三排中。

    디스플레이 장치와 그 제조 방법
    19.
    发明公开
    디스플레이 장치와 그 제조 방법 无效
    显示装置及其制造方法

    公开(公告)号:KR1020090121711A

    公开(公告)日:2009-11-26

    申请号:KR1020080047743

    申请日:2008-05-22

    CPC classification number: G02F1/133305 G09F9/35

    Abstract: PURPOSE: A display device and a manufacturing method thereof for improving the real feeling and immersion are provided to improve the image quality by changing FOV within a predetermined range. CONSTITUTION: A display device includes a flexible base(10) and a hard base(30). An image display structure(20) is formed on a second surface of the flexible base. The hard base comprises a plurality of pieces. A plurality of pieces is closely fixed to the flexible base. The flexible base is bend in a direction of the image display structure. The image display structure is roundly changed. The reality is improved by increase of FOV(Field Of View) by bending of the display device.

    Abstract translation: 目的:提供一种用于改善真实感和浸没的显示装置及其制造方法,以通过在预定范围内改变FOV来改善图像质量。 构成:显示装置包括柔性基座(10)和硬质基座(30)。 图像显示结构(20)形成在柔性基底的第二表面上。 硬底包括多个片。 多个件紧密地固定在柔性基座上。 柔性基座在图像显示结构的方向上弯曲。 图像显示结构被彻底改变。 通过显示装置的弯曲增加FOV(视场)来改善现实。

    산화물 반도체 트랜지스터 및 그 제조방법
    20.
    发明公开
    산화물 반도체 트랜지스터 및 그 제조방법 有权
    氧化物半导体晶体管及其制造方法

    公开(公告)号:KR1020090084642A

    公开(公告)日:2009-08-05

    申请号:KR1020080099608

    申请日:2008-10-10

    CPC classification number: H01L29/7869 H01L29/51 H01L29/66969 H01L29/78648

    Abstract: An oxide semiconductor transistor and a manufacturing method thereof are provided to increase the driving current by forming gates at the upper and lower parts of channel layer. A channel layer(116) is made of an oxide semiconductor. The first gate insulating layer(110) is formed between the channel layer and the first gate(112). The second gate insulating layer(120) is formed between the channel layer and the second gate(122). The first gate insulating layer and the second gate insulating layer are made of the different material. The first gate insulating layer is made of the material not including the oxygen. The second gate insulating layer is made of the material including the oxygen.

    Abstract translation: 提供一种氧化物半导体晶体管及其制造方法,通过在沟道层的上部和下部形成栅极来增加驱动电流。 沟道层(116)由氧化物半导体构成。 第一栅极绝缘层(110)形成在沟道层和第一栅极(112)之间。 第二栅极绝缘层(120)形成在沟道层和第二栅极(122)之间。 第一栅极绝缘层和第二栅极绝缘层由不同的材料制成。 第一栅绝缘层由不包括氧的材料制成。 第二栅绝缘层由包括氧的材料制成。

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