Abstract:
PURPOSE: A photonic crystal structure, a method for manufacturing the same, a reflective color filter and a display device employing the photonic crystal structure are provided to extend the viewing angle of the display device. CONSTITUTION: A photonic crystal structure(100) includes a nanostructure layer and a photonic crystal layer(140). The nanostructure layer is made of nanoparticles(120). The photonic crystal layer has a non-planar surface(140a). The photonic crystal layer includes a first material layer(141) having a first refractive index and a second material layer(142) having a second refractive index.
Abstract:
PURPOSE: An organic protective layer composition is provided to provide a protective layer capable of maintaining excellent reliability of an element in case exposed to bias stress for long time. CONSTITUTION: An organic protective layer composition comprises oligomer or polymer comprising a unit structure indicated in chemical formula 1 and 2, and a crosslinking agent. In chemical formula 1, Cy1 is a functional group selected from a substituted or unsubstituted C4-20 carbon ring, a substituted or unsubstituted C6-20 monocyclic aromatic group, a substituted or unsubstituted C2-20 fused polycyclic aromatic group and C2-20 non-condensed polycyclic aromatic group. In chemical formula 2, Cy2 is a substituted or unsubstituted C6-40 arylene, a substituted or unsubstituted C3-40 heteroarylene, substituted or unsubstituted C5-40 cycloalkylene, or a substituted or unsubstituted C5-40 heterocycloalkylne group, and k is an integer from 2 or more.
Abstract:
PURPOSE: A piezoelectric device which utilizes nano pores and a manufacturing method thereof are provided to easily arrange a nano structure of a high efficiency piezoelectric material without a complex process such as a lithography process and etc. CONSTITUTION: A matrix(30) is arranged on a substrate(10). The matrix comprises a piezoelectric material. A nano pore(40) is located within the matrix. The nano pore is extended to a first direction. The nano pore has a nano wire shape or a nano ribbon shape. The piezoelectric material is applied on the substrate in which a nano structure is arranged. The nano structure is selectively etched.
Abstract:
A method for manufacturing zinc oxide nanostructures is provided to produce high quality of nanostructures with a high growth rate by continuously supplying zinc ions needed for forming the zinc oxide nanostructures. A method for manufacturing zinc oxide nanostructures comprises the following steps of: dipping a substrate having a zinc seed layer(10) in a hexamethylenamine aqueous solution(20) and heating the mixture in a double boiler; and dropping a zinc nitrate aqueous solution into the hexamethylenamine aqueous solution. The zinc nitrate aqueous solution is dropped with an interval of 60-200 seconds. The zinc nitrate aqueous solution is dropped in a center of the substrate. Concentration of the zinc nitrate aqueous solution is 0.001-0.1M.
Abstract:
PURPOSE: An optical crystal structure, a manufacturing method thereof, a reflective color filter with the optical crystal structure, and a display device are provided to raise an optical efficiency, and easily reproduce color. CONSTITUTION: An optical crystal structure(100) comprises a plurality of dome type nano structure(120) and an optical crystal layer(140). The plurality of dome type nano structure is prepared on a substrate, has a random size, and is arranged separately with spaced apart from each other. The optical crystal layer is formed on the plurality of nano structure, has a unflat surface, and reflects the light of a certain wavelet. The plurality of dome type nano structure is arranged in a shape forming a single layer film on the substrate.
Abstract:
PURPOSE: A device and manufacturing method for a reflective type display are provided to improve a driving performance even if using a thin film transistor having a low mobility because of making the channel width of the thin film transistor to be large. CONSTITUTION: A reflective display device includes a first and second substrate(110,120), a driving unit, a reflective layer(115), a color filter layer, a transparent electrode(125), and a PDLC(Polymer Dispersed Liquid Crystal) layer(130). The first and second substrate is separately arranged. The driving unit is formed on an upper surface of the first substrate. The reflective layer reflects an entered light by being located on an upper part of the driving unit. The color filter layer is formed on the reflective layer. The transparent electrode is formed on a lower surface of the second substrate. The PDLC layer is filled between the transparent electrode and the color filter layer.
Abstract:
PURPOSE: A method for forming inorganic layer is provided to perform additional process(annealing) at low temperature in a short time and to save preparation cost. CONSTITUTION: A method for forming inorganic material layer comprises: a step of forming source layer of inorganic material on a substrate; a step of patterning the source layer; and a step of annealing the source layer by laser to change into inorganic layer. The source layer contains inorganic material precursor, solubilizing agent, and solvent. The substrate is a glass substrate.
Abstract:
A thin film transistor and a manufacturing method thereof are provided to implement high electron mobility by connecting a source electrode and a drain electrode with one nano wire as a semiconductor channel. A nano wire(6) is horizontally arranged on a substrate(1) in the side of a source electrode(4) and a drain electrode(5). A semiconductor channel layer of the thin film transistor is comprised of a brunch of nano wires. The nano wire is epitaxially grown to the horizontal direction of the substrate from the crystal surface formed in the side of the source electrode and the drain electrode. The nano wire is a Si, GaAs, or ZnO nano wire. The thin transistor has an undercut structure. The crystal surface of a seed is formed on one or more electrodes among the source and drain electrodes.
Abstract:
An anode panel of a field emission type backlight unit and the field emission type backlight unit having the same are provided to improve luminance by increasing light utilization efficiency. An anode electrode(123) is formed on a lower surface of a substrate(121). A fluorescent substance layer(126) is applied to a lower surface of the anode electrode. A transparent cover(127) and a liquid pack(129) are prepared on an upper surface of the substrate. The transparent cover has lens-shaped curved units(127a). The liquid pack includes a transparent liquid filled in the curved units. The substrate is a transparent substrate. The anode electrode is made of a transparent conductive material. The anode electrode is made of ITO(Indium Tin Oxide). The transparent cover is made of synthetic resins. Spaces in the curved units are communicated with each other so that the transparent liquid circulates through the transparent cover. The transparent liquid is water or transparent oil.