Abstract:
The present invention relates to a protein complex including antigen-biding sites for c-Met and Her-3, dual specific anti-bodies of c-Met and Her-3 from the protein complex and a manufacturing method thereof. According to an embodiment of the present invention, a system for targeting c-Met and Her-3 at the same time is built by using the protein complex.
Abstract:
An electrical fuse device is provided to solve the degradation of productivity due to the defect of a part of cells by replacing the defective cell with a redundancy cell. In an electrical fuse device, a cathode(100) and an anode(200) are separated from each other. A fuse link(150) connects the cathode and the anode. The fuse link comprises a multi-metal layer(L1,L2) structure including a first metal layer and a second metal layer. The cathode and anode have a laminated structure same as that of the fuse link, and the fuse link has a weak point on which electrical cutting is more facilitated the other region.
Abstract:
The present invention relates to a protein complex including antigen-biding sites for c-Met and VEGF, dual specific antibodies for c-Met and VEGF obtained by the protein complex and a manufacturing method thereof. According to an embodiment of the present invention, a target system for targeting c-Met and VEGF is built by using the protein complex.
Abstract:
병렬로 연결된 복수의 안티퓨즈와 이 병렬 연결 구조와 직렬로 연결된 적어도 하나의 안티퓨즈를 포함하여 적어도 3개 이상의 안티퓨즈를 구비하며, 병렬 연결 구조의 저항이 직렬로 연결된 안티퓨즈의 저항보다 작으며, 병렬로 연결된 복수의 안티퓨즈의 유전체층은 서로 다른 두께로 형성되어 절연 파괴 전압이 서로 다르도록 형성된 멀티 레벨 안티퓨즈 및 이를 적용하여 멀티 레벨 프로그램 오퍼레이션을 확보할 수 있는 동작 방법이 개시되어 있다.
Abstract:
PURPOSE: An anti-fuse is provided to omit a separate programming transistor by including a transistor structure. CONSTITUTION: An anti-fuse includes a source(130a), a drain(130b), a channel, an anti-fuse unit, and a gate electrode(120). The anti-fuse unit is included on the channel. The gate electrode is included on the anti-fuse unit. The anti-fuse unit is destroyed by a given applied voltage. A part of the source and the drain is overlapped with the anti-fuse unit. The source and the drain have an LDD(Lightly Doped Drain) structure.
Abstract:
안티퓨즈와 그 동작 및 제조방법에 관해 개시되어 있다. 본 발명의 안티퓨즈는 서로 이격된 제1 및 제2도전체, 상기 제1 및 제2도전체 사이에 구비된 안티퓨즈용 유전층, 및 상기 제1 및 제2도전체 중 어느 하나와 상기 유전층 사이에 구비된 확산층을 포함한다.