Abstract:
PURPOSE: A device and a method for detecting radiation on a real-time basis are provided to measure a change in a state of a radiation detection thin film when the same is exposed to the radiation based on the extent of reflection. CONSTITUTION: A device(10) for detecting radiation on a real-time basis comprises a radiation detection thin film(100), a first optical fiber, an optical detecting unit(170), a reflectance calculating unit(180), and a control unit(140). The first optical fiber emits lights to the radiation detection thin film. The optical detecting unit detects the information of the intensity of light reflected by the radiation detecting thin film. The reflectance calculating unit calculates the reflectance based on the information of the intensity of light detected by the optical detection unit. The control unit outputs a result of detecting the radiation based on the reflectance. [Reference numerals] (140) Control unit; (150) Branch unit; (160) Optical source; (170) Optical detecting unit; (172) Spectrometer; (180) Reflectance calculating unit
Abstract:
PURPOSE: A method for manufacturing a silica antireflection layer and a silicon solar cell using the same are provided to improve a short current density by decreasing a surface reflectivity of the solar cell. CONSTITUTION: Aqueous coating solutions including a silica precursor and a dopant precursor are coated on a semiconductor substrate(100). A dopant containing silica layer(200) is formed by a sol-gel method. The dopant containing silica layer is thermally processed under an air or oxygen containing gas atmosphere. An emitter layer(110) is formed by a p-n junction through the diffusion of a dopant. A spherical silica particle layer is formed on the semiconductor substrate.
Abstract:
PURPOSE: A surface plasmon resonance sensor using a metal graffin, a manufacturing method thereof and a plasmon resonance system are provided to driven in a fixed wave length without a buffer layer by having a different cladding mode within a sensor. CONSTITUTION: A surface plasmon resonance sensor using a metal griffin comprises a metal graffin layer(140). The metal graffin layer is formed in the core(120) of the fixed region of an optical fiber(100) from in which a jacket and a cladding(130) are removed. The core of the optical fiber comprises one or more selected from the group consisting of the inorganic material, organic compound and their combination. The core of the fixed region of the optical fiber is exposed. The metal graffin layer is formed on the exposed core of the optical fiber.
Abstract:
본 발명은 열안정성이 우수하며 높은 저항값을 가지는 세라믹-금속 나노복합체를 이용한 박막 내장형 저항체 및 이의 제조방법에 관한 것이다. 본 발명의 박막 내장형 저항체는 세라믹-금속 나노복합체를 이용하여 제조됨으로써 산화 구조로 인해 산화의 영향을 적게 받아 우수한 열안정성을 나타낼 뿐만 높은 저항값을 나타내어 회로의 집적도를 높인 저항 내장형 인쇄회로기판 등에 사용될 수 있다. 박막 내장형 저항체, 산화실리콘, 백금, 열안정성, 고저항
Abstract:
PURPOSE: A thin film embedded resistor prepared using a ceramic-metal nano-composite is provided to increase the integration of a circuit, thereby allowing a user to implement a fine pitch member. CONSTITUTION: An oxidation silicon - platinum nano-composite is deposited on a substrate to distribute platinum particle inside a matrix. The oxidation silicon - platinum nano-composite has an atomic ratio of 67:33 or 42:58 of oxidation silicon and platinum, respectively. The size of the platinum particles distributed within the oxidation silicon matrix is 3-5 nm. The thin film embedded register has 3K at a TCR of 100 ppm.
Abstract:
PURPOSE: A method for preparing nanoparticles and a lithium electrode employing the same are provided to exhibit high reproducibility, particle distribution uniformity, and profitability. CONSTITUTION: A method for preparing nanoparticles comprises the following steps of: preparing a nanoparticle making device; vacuuming a reaction chamber(S100); injecting a first processing gas and ambient gas into the reaction chamber(S200); controlling the first processing gas and ambient gas to maintain the steady state(S300); and applying plasma to a nanoparticle forming area of the reaction chamber at the same time injecting a second processing gas, and accommodating the formed nanoparticles in a receiving area of the reaction chamber(S400).