公开(公告)号：KR1020080069531A

公开(公告)日：2008-07-28

申请号：KR1020080006651

申请日：2008-01-22

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 하치고아키히로 ,  마츠모토나오키 ,  니시우라다카유키

IPC: H01L21/302

CPC classification number: H01L21/02052 ,  C30B29/40 ,  C30B33/12 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/30621

Abstract: A method for manufacturing an III-V compound semiconductor substrate is provided to apply bias power during a first dry etching which is lower than that during a second dry etching, to a chuck so as to reduce damage of the surface of the semiconductor, thereby increasing PL strength of the semiconductor. A method for manufacturing an III-V compound semiconductor substrate comprises the steps of; grinding a surface of a wafer(S1); polishing the surface of the wafer mechanically and chemically(S3,S5); cleaning the surface of the wafer(S7); first-dry etching the surface of the wafer, using a plasma etching device(S9); applying low bias to a chuck, using gas including halogen through a second dry etching process(S11); and cleaning the surface of the wafer(S13).

Abstract translation: 提供一种制造III-V族化合物半导体衬底的方法，用于在比第二次干法蚀刻期间的第一干法蚀刻期间将偏置功率提供给卡盘，以减少半导体表面的损伤，从而增加 PL的半导体强度。 一种III-V族化合物半导体衬底的制造方法，包括以下步骤： 研磨晶片的表面（S1）; 以机械和化学方式抛光晶片的表面（S3，S5）; 清洁晶片表面（S7）; 使用等离子体蚀刻装置（S9）对晶片的表面进行干式蚀刻。 通过第二次干蚀刻工艺（S11），使用包括卤素的气体将低偏压施加到卡盘上; 并清洗晶片的表面（S13）。

公开(公告)号：KR1020080002644A

公开(公告)日：2008-01-04

申请号：KR1020070064361

申请日：2007-06-28

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 가사이히토시 ,  하치고아키히로 ,  미우라요시키 ,  아키타가츠시

IPC: H01L21/318

CPC classification number: H01L22/26 ,  H01L21/187 ,  H01L21/76251 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/0075 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A GaN thin-film bonded substrate is provided to reduce the fabricating cost of a semiconductor device by firmly bonding a GaN thin film to a heterogeneous substrate having different chemical composition than that of GaN. A heterogeneous substrate(20) having different composition than that of GaN is bonded to a GaN bulk crystal(10). The GaN bulk crystal is divided from a surface(10t) having a distance of 0.1-100 mum from an interface with the heterogeneous substrate to form a GaN thin film(10a) on the heterogeneous substrate. The maximum surface roughness of the bonding surface of the GaN bulk crystal is not more than 20 mum. At least one GaN-based semiconductor layer(30) can be grown on the GaN thin film of a GaN thin-film bonded substrate(1).

Abstract translation: 提供一种GaN薄膜键合衬底，通过将GaN薄膜牢固地粘合到具有不同于GaN的化学成分的异质衬底上，从而降低了半导体器件的制造成本。 具有与GaN不同成分的异质衬底（20）被接合到GaN体晶（10）。 从与异质衬底的界面的距离为0.1〜100μm的表面（10t）分割出GaN体晶体，在异质衬底上形成GaN薄膜（10a）。 GaN块状结晶的接合面的最大表面粗糙度不超过20μm。 可以在GaN薄膜键合衬底（1）的GaN薄膜上生长至少一个GaN基半导体层（30）。

公开(公告)号：KR1020060135515A

公开(公告)日：2006-12-29

申请号：KR1020060055817

申请日：2006-06-21

Applicant: 스미토모덴키고교가부시키가이샤

Inventor： 이시바시케이지 ,  하치고아키히로 ,  니시우라타카유키

IPC: H01L21/20 ,  H01L21/302 ,  H01L33/16

CPC classification number: H01L21/3043 ,  B23H7/02 ,  B23H9/00

Abstract: A method for machining a nitride semiconductor crystal is provided to easily and effectively work the nitride semiconductor crystal by partially removing and working the crystal by local heat generated by discharge. When a nitride semiconductor crystal(1) is worked, voltage is applied between the nitride semiconductor crystal and a tool electrode(3) to produce electrical discharge, so that the nitride semiconductor crystal is partially removed and worked by local heat generated by the electrical discharge. The nitride semiconductor crystal is cut using a wire electrode as the tool electrode. The wire electrode is made of tungsten or molybdenum.

Abstract translation: 提供了一种用于加工氮化物半导体晶体的方法，以便通过由放电产生的局部热部分去除和加工晶体来容易且有效地加工氮化物半导体晶体。 当加工氮化物半导体晶体（1）时，在氮化物半导体晶体和工具电极（3）之间施加电压以产生放电，从而通过放电产生的局部热部分去除和加工氮化物半导体晶体 。 使用线电极作为工具电极切割氮化物半导体晶体。 线电极由钨或钼制成。