公开(公告)号：KR100752504B1

公开(公告)日：2007-08-27

申请号：KR1020040106239

申请日：2004-12-15

Applicant: 주식회사 엘지화학 ,  재단법인서울대학교산학협력재단

Inventor： 김재정 ,  이창화 ,  이상철

IPC: C23C18/16

Abstract: 본 발명은 무전해 도금을 이용하여 패턴 내 금속배선을 형성하는 방법에 관한 것으로, 1차 시드층 형성시 코발트 또는 포름알데히드를 환원제로 사용하여 구리 무전해 도금용액에서 얇고 균일한 시드층을 형성하는 단계와, 디시아옥탄디술폰산(4,5-dithiaoctane-1,8-disulfonic acid) 또는 멀캡토프로판술포네이트 (3-mercapto-1-propanesulfonate)를 첨가제로 사용하여 bottom-up filling 방식으로 패턴을 금속으로 채우는 단계를 포함하여 이루어지며, 본 발명에 의한 무전해 도금을 이용한 패턴 내 금속배선 형성방법은 금속 배선의 표면 거칠기를 감소시키고 막질을 향상시키며, 보이드(void)나 씸(seam)과 같은 결점이 없이 bottom-up filling 방식으로 채워 범프(bump)를 형성시킬 수 있는 효과가 있다.
무전해 도금, 디시아옥탄디술폰산(4,5-dithiaoctane-1,8-disulfonic acid), 멀캡토프로판술포네이트 (3-mercapto-1-propanesulfonate), SPS, MPSA, 보이드(void), 씸(seam), bottom-up filling, 범프(bump)

公开(公告)号：KR1020070059617A

公开(公告)日：2007-06-12

申请号：KR1020050118660

申请日：2005-12-07

Applicant: 주식회사 엘지화학 ,  재단법인서울대학교산학협력재단

Inventor： 황순식 ,  조성기 ,  김수길 ,  김재정

IPC: C25D3/00

CPC classification number: C25D3/38 ,  C25D5/34

Abstract: A Cu electrodeposition method which performs conformal deposition and manufactures a Cu thin film free of bumps at the same time by using a Cu electrodeposition solution comprising benzotriazole as a leveler is provided. In a Cu electrodeposition solution having a basic composition comprising copper sulfate, sulfuric acid, polyethylene glycol, sodium chloride, and bis(3-sulfopropyl)disulfide, the Cu electrodeposition solution comprises benzotriazole as a leveler. In a Cu electrodeposition method using a basic composition comprising copper sulfate, sulfuric acid, polyethylene glycol, sodium chloride, and bis(3-sulfopropyl)disulfide, the Cu electrodeposition method comprises performing post-electrodeposition, or pre- and post-electrodeposition using benzotriazole as a leveler. The Cu electrodeposition method comprises the steps of: (i) electrodepositing a substrate for 5 to 50 seconds in a Cu electrodeposition solution prepared by adding polyethylene glycol, sodium chloride, and bis(3-sulfopropyl)disulfide into a basic solution comprising copper sulfate and sulfuric acid; (ii) cleaning the electrodeposited substrate with ultra-pure water for 1 to 5 seconds, and removing water from the substrate using nitrogen gas; (iii) adding benzotriazole into the basic solution, and performing post-electrodeposition of the water-removed substrate for 140 seconds; and (iv) cleaning the post-electrodeposited substrate with ultra-pure water for 5 to 10 seconds, and removing water from the substrate using nitrogen gas.

Abstract translation: 提供了通过使用包含苯并三唑作为整平剂的Cu电沉积溶液同时进行保形沉积并制造不含凸点的Cu薄膜的Cu电沉积方法。 在具有包含硫酸铜，硫酸，聚乙二醇，氯化钠和双（3-磺基丙基）二硫化物的碱性组成的Cu电沉积溶液中，Cu电沉积溶液包含苯并三唑作为整平剂。 在使用包含硫酸铜，硫酸，聚乙二醇，氯化钠和双（3-磺基丙基）二硫化物的碱性组合物的Cu电沉积方法中，Cu电沉积方法包括使用苯并三唑进行电沉积后或电后沉积 作为矫直机。 Cu电沉积方法包括以下步骤：（i）在通过将聚乙二醇，氯化钠和双（3-磺丙基）二硫化物加入到包含硫酸铜和碱性溶液中的Cu电沉积溶液中电沉积基材5至50秒， 硫酸; （ii）用超纯水清洗电沉积基片1〜5秒钟，用氮气从基板上除去水分; （iii）将苯并三唑加入到碱性溶液中，并且对水去除的基材进行电后沉积140秒; （iv）用超纯水清洗后电沉积基材5〜10秒，用氮气从基板上除去水分。

公开(公告)号：KR100711509B1

公开(公告)日：2007-04-27

申请号：KR1020060000031

申请日：2006-01-02

Applicant: 재단법인서울대학교산학협력재단

Inventor： 송인규 ,  김재정 ,  이호인 ,  윤민혜

IPC: B01J23/755 ,  B01J23/70 ,  B01J21/04 ,  C01B3/38

公开(公告)号：KR1020060067453A

公开(公告)日：2006-06-20

申请号：KR1020040106238

申请日：2004-12-15

Applicant: 주식회사 엘지화학 ,  재단법인서울대학교산학협력재단

Inventor： 김재정 ,  안응진 ,  구효철

IPC: C25D3/46

CPC classification number: C25D3/46 ,  C25D5/50 ,  C25D7/12 ,  H01L21/2885

Abstract: 본 발명은 팔라듐-은 활성화 방법을 이용한 은 전해도금방법에 관한 것으로서, 반도체 금속 배선 공정에서 높은 비저항을 갖는 기판 위에 활성화 방법을 통하여 전해도금이 가능하도록 씨앗층 없이 핵을 생성시킨 후 은 전해도금을 실시하여 균일하고 결함이 없는 은 박막을 형성시키며, 비저항이 낮은 은을 현재보다 고집적화된 반도체 배선공정의 재료로 사용할 수 있는 효과가 있다.
팔라듐, 은, 활성화, 전해도금, 핵, 씨앗층, 확산방지층, 금속배선, 비저항

公开(公告)号：KR100578976B1

公开(公告)日：2006-05-12

申请号：KR1020040082581

申请日：2004-10-15

Applicant: 삼성에스디아이 주식회사 ,  재단법인서울대학교산학협력재단

Inventor： 김주용 ,  권호진 ,  김재정 ,  안진구 ,  권오중

IPC: H01L21/20

CPC classification number: H01L23/4827 ,  H01L2224/04026 ,  H01L2924/1461 ,  H01L2924/00

Abstract: 본 발명은 접착력이 우수한 다층 박막 및 이의 제조방법에 관한 것으로, 더욱 상세하게는 기판 상에 형성된 질화탄탈륨막과, 상기 질화탄탈륨막 상에 형성된 탄탈륨막과, 상기 탄탈륨막 상에 형성된 금 박막을 포함하는 다층 박막에 관한 것이다. 또한, 본 발명은 질화탄탈륨막이 형성된 기판 상에 탄탈륨을 소정 두께로 증착시킨 다음, 금 박막을 증착시켜 250 내지 800 ℃에서 열처리하여 제조되는 다층 박막의 제조방법에 관한 것이다.
상기 질화탄탈륨막 및 금 박막 사이에 탄탈륨막을 형성하여 상기 층간 사이의 접착력을 효과적으로 증가시켜 반도체 소자, MEMS 및 연료전지 분야에 바람직하게 적용할 수 있다.
금, 질화탄탈륨, 탄탈륨, 열처리, 접착, 반도체 소자, MEMS, 연료전지

公开(公告)号：KR100530008B1

公开(公告)日：2005-11-22

申请号：KR1020020077444

申请日：2002-12-06

Applicant: 재단법인서울대학교산학협력재단

Inventor： 한희 ,  차승환 ,  김재정

IPC: H01L21/20

Abstract: Ru 박막이 증착되는 확산방지막을 활성화시키는 전처리 공정이 포함되는 Ru 박막 증착방법에 관하여 개시한다. 본 발명에 따른 방법은, 확산방지막 상에 Ru 박막을 증착하는 방법에 있어서, Ru 박막을 증착하기 전에 확산방지막을 팔라듐으로 활성화시키는 단계를 포함하는 것을 특징으로 한다. 본 발명에 의하면, 핵생성에 필요한 인큐베이션 타임을 줄여 증착속도 개선효과가 있으므로 생산성을 향상시킬 수 있고, 종래보다 비저항값이 작아져서 열처리 공정이 필요 없으므로 생산성이 향상되며, 우수한 표면거칠기를 얻을 수 있으므로 커패시터의 하부전극으로 사용되면 누설전류가 감소되고, 항복전압이 증가하여 전기적 특성이 좋아진다.

公开(公告)号：KR1020040080466A

公开(公告)日：2004-09-20

申请号：KR1020030015228

申请日：2003-03-11

Applicant: 주식회사 엘지화학 ,  재단법인서울대학교산학협력재단

Inventor： 김재정 ,  안응진

IPC: C25D3/46

Abstract: PURPOSE: An electroplating solution is provided to form a defectless silver thin film so that the thin film is properly applied to high integrated semiconductor metallization process by adding benzotriazole compound and thiourea compound to silver plating solution, and a method for forming silver thin film using the solution is provided. CONSTITUTION: The electroplating solution for forming a silver thin film contains benzotriazole compound and thiourea compound as additives in a silver electroplating solution, wherein the benzotriazole compound is a compound selected from the group consisting of 1,2,3-benzotriazole, 5-methylbenzotriazole, 5,6-dimethylbenzotriazole, phenylbenzotriazole, 5-ethylbenzotriazole, 5-methoxybenzotriazole, 5-aminobenzotriazole, 5-dimethylaminobenzotriazole, 5-acetamidobenzotriazole, 5-methanesulfonamidobenzotriazole, 5-aminocarbonylbenzotriazole, 5-methoxycarbonylbenzotriazole, 5-carboxybenzotriazole, 5-chlorobenzotriazole, 5-bromobenzotriazole, 5-nitrobenzotriazole, 4-nitrobenzotriazole, 5-cyanobenzotriazole, 5-sulfobenzotriazole and 4-aminobenzotriazole, wherein the thiourea compound is a compound selected from the group consisting of thiourea and alkylthiourea compounds, wherein the silver electroplating solution has pH of 7 to 12 and comprises potassium silver cyanide (KAg(CN)2) and potassium cyanide (KCN), and wherein the silver electroplating solution comprises potassium silver cyanide, thiourea compound and benzotriazole compound in a mole ratio of 1:0.071:0.0091.

Abstract translation: 目的：提供电镀溶液以形成无缺陷的银薄膜，使得通过向镀银溶液中加入苯并三唑化合物和硫脲化合物将薄膜适当地应用于高集成半导体金属化工艺，以及使用 提供解决方案。 构成：用于形成银薄膜的电镀溶液含有苯并三唑化合物和硫脲化合物作为银电镀溶液中的添加剂，其中苯并三唑化合物是选自1,2,3-苯并三唑，5-甲基苯并三唑， 5,5-二甲基苯并三唑，苯基苯并三唑，5-乙基苯并三唑，5-甲氧基苯并三唑，5-氨基苯并三唑，5-二甲基氨基苯并三唑，5-乙酰氨基苯并三唑，5-甲磺酰氨基苯并三唑，5-氨基羰基苯并三唑，5-甲氧基羰基苯并三唑，5-羧基苯并三唑，5-氯苯并三唑， 溴苯并三唑，5-硝基苯并三唑，4-硝基苯并三唑，5-氰基苯并三唑，5-磺基苯并三唑和4-氨基苯并三唑，其中硫脲化合物是选自硫脲和烷基硫脲化合物的化合物，其中银电镀溶液的pH为7〜 12，并包含氰化钾银（KAg（CN）2）和钾 氰化钾（KCN），并且其中所述电镀银溶液包含氰化银氰化银，硫脲化合物和苯并三唑化合物，摩尔比为1:0.071:0.0091。

公开(公告)号：KR1020040049612A

公开(公告)日：2004-06-12

申请号：KR1020020077444

申请日：2002-12-06

Applicant: 재단법인서울대학교산학협력재단

Inventor： 한희 ,  차승환 ,  김재정

IPC: H01L21/20

Abstract: PURPOSE: A method for depositing a Ru thin film is provided to improve a deposition rate by reducing an interval of incubation time necessary for forming an initial nucleus, and to improve surface roughness and step coverage. CONSTITUTION: An oxide material formed on a diffusion barrier layer is eliminated. The diffusion barrier layer is activated by using palladium before the Ru thin film is deposited. The diffusion barrier layer is one selected from a group of TiN, Ta, TaN, TaSiN and TiAlN.

Abstract translation: 目的：提供沉积Ru薄膜的方法，通过减少形成初始核所需的孵育时间间隔，提高表面粗糙度和阶梯覆盖率，提高沉积速率。 构成：消除了形成在扩散阻挡层上的氧化物材料。 在沉积Ru薄膜之前，通过使用钯来激活扩散阻挡层。 扩散阻挡层是选自一组TiN，Ta，TaN，TaSiN和TiAlN中的一种。

公开(公告)号：KR1020030091478A

公开(公告)日：2003-12-03

申请号：KR1020020029543

申请日：2002-05-28

Applicant: 재단법인서울대학교산학협력재단

Inventor： 김재정 ,  차승환

IPC: C23C18/54

CPC classification number: C23C18/168 ,  C23C18/163 ,  C23C18/1683 ,  C23C18/405 ,  H01L21/288

Abstract: PURPOSE: A method for fabricating a copper film for semiconductor interconnection which has low resistivity by solving such conventional problems as interruption of electroless copper plating and increase of resistivity value is provided. CONSTITUTION: In a method for fabricating copper film for semiconductor interconnection in which electroless plating is performed on the surface of the object to be plated by dipping an object to be plated into an electroless copper plating solution comprising copper salt, complexing agent for forming ligands with copper ions to suppress liquid phase reaction, reducing agent for reducing copper ions and pH adjusting agent for keeping pH constant to oxidize the reducing agent, the method for fabricating copper film for semiconductor interconnection is characterized in that the electroless plating is performed by using formaldehyde as the reducing agent and maintaining temperature of the electroless copper plating solution to 30 to 70 deg.C, wherein the electroless plating is performed by using the electroless copper plating solution comprising 0.7 to 1.1 g/L of copper sulfate as the copper salt, 2 to 2.5 g/L of ethylene diamine acetic acid as the complexing agent, 0.3 to 0.5 g/L of formaldehyde as the reducing agent and 3 to 5 g/L of potassium hydroxide as the pH adjusting agent, wherein the electroless plating is performed as the object to be plated is being rotated, and wherein the electroless plating is performed at a nitrogen atmosphere or argon atmosphere.

Abstract translation: 目的：提供一种制造半导体互连用铜膜的方法，其通过解决诸如无电镀铜中断和电阻率值增加等常规问题而具有低电阻率。 构成：在制造用于半导体互连的铜膜的方法中，其中通过将要镀覆的物体浸渍到包含铜盐的无电镀铜溶液中，在待镀物体的表面上进行化学镀，将形成配体的络合剂与 铜离子抑制液相反应，用于还原铜离子还原剂和pH调节剂以保持pH恒定以氧化还原剂，半导体互连用铜膜的制造方法的特征在于，通过使用甲醛作为 所述还原剂和所述无电镀铜溶液的保持温度为30〜70℃，其中，所述无电解电镀通过使用包含0.7〜1.1g / L的硫酸铜作为铜盐的化学镀铜溶液进行，2〜 作为络合剂的乙二胺乙酸2.5g / L，形式为0.3〜0.5g / L 醛作为还原剂和3〜5g / L的氢氧化钾作为pH调节剂，其中，随着被镀物体的旋转而进行化学镀，其中化学镀在氮气氛或氩气下进行 大气层。

公开(公告)号：KR100865748B1

公开(公告)日：2008-10-28

申请号：KR1020070042775

申请日：2007-05-02

Applicant: 재단법인서울대학교산학협력재단

Inventor： 김재정 ,  조성기

IPC: C25D3/38

CPC classification number: C25D3/38 ,  C25D7/123 ,  H01L21/2885

Abstract: An electrolytic copper plating solution and a method for forming a metal line of a semiconductor device using the same are provided to secure super peeling and leveling without an additional process and form an uniform copper wire by using N,N-Dimethyldithiocarbamic acid(3-sulfopropyl)ester(DPS) of low concentration. An electrolytic copper plating solution includes N,N-Dimethyldithiocarbamic acid(3-sulfopropyl)ester(DPS) of concentration of 1 muM to 30 muM to achieve super peeling and leveling in a single process. The solution includes the DPS, PEG, NaCl, and copper sulfate solution, and sulfuric acid solution. Concentration of PEG is 50 muM to 200 muM. Concentration of NaCl is 0.5 mM to 1.5 mM. Concentration of copper sulfate solution is 0.20M to 0.25M. Concentration of sulfuric acid solution is 1.0M to 1.8M.

Abstract translation: 提供一种电解铜电镀溶液和使用该电解铜电镀溶液的半导体器件的金属线形成方法，以确保超级剥离和流平而不需要额外的工艺，并通过使用N，N-二甲基二硫代氨基甲酸（3-磺基丙基 ）酯（DPS）。 电解铜电镀溶液含有浓度为1μM至30μM的N，N-二甲基二硫代氨基甲酸（3-磺基丙基）酯（DPS），以在单一过程中实现超级剥离和流平。 该溶液包括DPS，PEG，NaCl和硫酸铜溶液以及硫酸溶液。 PEG浓度为50〜200μm。 NaCl的浓度为0.5mM至1.5mM。 硫酸铜溶液浓度为0.20M〜0.25M。 硫酸溶液浓度为1.0M〜1.8M。