公开(公告)号：KR101384419B1

公开(公告)日：2014-04-21

申请号：KR1020120127404

申请日：2012-11-12

Applicant: 전남대학교산학협력단

Inventor： 김진혁 ,  임원빈 ,  신승욱 ,  이정용 ,  김태언

IPC: H01L31/042 ,  H01L31/18 ,  C09K11/08

CPC classification number: Y02E10/542 ,  H01L31/042 ,  C09K11/08 ,  H01L31/18

Abstract: Provided are a dye sensitized solar cell including phosphors and a method for manufacturing the same. A solar cell includes a transparent substrate, a first electrode which is arranged on the transparent substrate, a phosphor layer which is arranged on a first electrode layer, a cathode part which includes a light absorption layer which is arranged on the phosphor layer, and an anode part which is arranged to face the cathode part and includes a second electrode, and an electrolyte layer which is interposed between the anode part and the cathode part. The photocurrent density of the solar cell can be increased by absorbing incident light of a specific wavelength range which is not absorbed to the solar cell and supplying and changing it into light of a visible ray wavelength range, about 500 nm - 800 nm.

Abstract translation: 提供了包括磷光体的染料敏化太阳能电池及其制造方法。 太阳能电池包括透明基板，布置在透明基板上的第一电极，布置在第一电极层上的荧光体层，包括布置在荧光体层上的光吸收层的阴极部分，以及 阳极部件，被布置为面对阴极部分并且包括第二电极，以及介于阳极部分和阴极部分之间的电解质层。 可以通过吸收不被太阳能电池吸收的特定波长范围的入射光并将其改变为约500nm-800nm的可见光线波长范围的光，可以增加太阳能电池的光电流密度。

公开(公告)号：KR101203324B1

公开(公告)日：2012-11-20

申请号：KR1020100128502

申请日：2010-12-15

Applicant: 전남대학교산학협력단

Inventor： 김진혁 ,  문종하 ,  김태언 ,  김진아 ,  김선훈 ,  김회종

IPC: H01L33/28

Abstract: 산화아연 재질의 나노 광 결정이 형성된 발광 다이오드가 개시된다. 나노 광 결정을 형성하기 위해 전류 확산층 또는 발광 구조체 상부에는 씨앗층이 형성된다. 특히, 발광 구조체 상부에 형성되는 씨앗층은 전류 확산층의 기능을 동시에 수행한다. 이를 위해 씨앗층은 알루미늄이 도핑된 산화아연인 AZO로 구성된다. 나노 광 결정은 씨앗층 상부에 홀로그램 리소그래피를 통해 형성된 나노 패턴에 의해 소정의 주기로 형성된다.

公开(公告)号：KR100740318B1

公开(公告)日：2007-07-18

申请号：KR1020060070782

申请日：2006-07-27

Applicant: 전남대학교산학협력단

Inventor： 김태언 ,  김보람 ,  문종하 ,  이병택 ,  김진혁

IPC: H01L21/20 ,  H01L21/205

Abstract: A method for forming SrTiO3/BaTiO3 artificial super lattices on a silicon substrate by using a TiN buffer layer is provided to enhance crystallization and dielectric characteristics by alternatively depositing a SrTiO3 thin film and a BaTiO3 thin film on the substrate. A silicon substrate is inputted in a chamber of a pulse laser depositing apparatus, and then a TiN buffer layer is deposited on the silicon substrate with the TiN buffer layer at a temperature of 650 to 750°C. A SrTiO3 thin film and a BaTiO3 thin film are alternatively deposited on the silicon substrate at a temperature of 300 to 750°C to form artificial super lattices.

Abstract translation: 提供了通过使用TiN缓冲层在硅衬底上形成SrTiO 3 / BaTiO 3人造超晶格的方法，以通过交替地在衬底上沉积SrTiO 3薄膜和BaTiO 3薄膜来增强结晶和介电特性。 将硅衬底输入脉冲激光沉积设备的腔室中，然后在具有TiN缓冲层的硅衬底上沉积TiN缓冲层，温度为650-750℃。 SrTiO3薄膜和BaTiO3薄膜交替地沉积在硅衬底上，温度为300至750℃以形成人造超晶格。