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公开(公告)号：KR101280898B1
公开(公告)日：2013-07-02
申请号：KR1020120013471
申请日：2012-02-09
Applicant: 전자부품연구원
IPC: H02N11/00
CPC classification number: H02N11/002 , B82Y30/00 , H01L29/0665
Abstract: PURPOSE: A nano generator using a film type zinc oxide nanowire and a manufacturing method thereof are provided to reduce the number of processes by eliminating a gap between electrodes. CONSTITUTION: A substrate is prepared. A first electrode layer (12) is formed. An aluminum dopped ZnO (AZO) catalyst layer (13) is formed on the first electrode layer. The surface of the AZO catalyst layer is treated with atmospheric pressure plasma. A film type zinc oxide nanowire layer (14) is formed on the AZO catalyst layer.
Abstract translation: 目的：提供使用膜型氧化锌纳米线的纳米发生器及其制造方法，通过消除电极间的间隙来减少工序数。 构成：制备底物。 形成第一电极层（12）。 在第一电极层上形成铝掺杂的ZnO（AZO）催化剂层（13）。 AZO催化剂层的表面用大气压等离子体处理。 在AZO催化剂层上形成膜状氧化锌纳米线层（14）。
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公开(公告)号：KR101249723B1
公开(公告)日：2013-04-02
申请号：KR1020110110900
申请日：2011-10-28
Applicant: 전자부품연구원
Abstract: PURPOSE: A method for manufacturing a nozzle for discharging droplets and a capacitive droplet discharging device using the nozzle manufactured by the same are provided to solve problems of applying current by using an insulator as a nozzle, and to form minute patterns directly on a substrate by discharging droplets of a micrometer size on the substrate. CONSTITUTION: A method for manufacturing a nozzle for discharging droplets comprises the following steps: a step for forming one or more silicon columns(203) on a substrate; a step for filling a filler around the silicon columns; a step for exposing the upper part of the silicon columns by flattening the top of the fillers; a step for exposing the rear portion of the silicon columns by drilling holes on the rear surface of the substrate where the silicon columns are arranged; and a step for removing the silicon columns.
Abstract translation: 目的：提供一种用于制造用于喷射液滴的喷嘴的方法和使用其制造的喷嘴的电容式液滴喷射装置，以解决通过使用绝缘体作为喷嘴来施加电流的问题，并且通过以下方式直接在基板上形成微小图案 在基板上排出微米尺寸的液滴。 构成：用于制造用于排出液滴的喷嘴的方法包括以下步骤：在基板上形成一个或多个硅柱（203）的步骤; 在硅柱周围填充填料的步骤; 通过使填料的顶部平坦化来暴露硅柱的上部的步骤; 通过在衬底的后表面上钻出硅柱来暴露硅柱的后部以暴露硅柱的步骤; 以及去除硅柱的步骤。
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公开(公告)号：KR101233100B1
公开(公告)日：2013-02-14
申请号：KR1020100083259
申请日：2010-08-27
Applicant: 전자부품연구원
IPC: B05B5/00 , B05C11/10 , H01L21/027
Abstract: 액적 토출 장치가 제공된다. 본 액적 토출 장치는, 하부 기판 및 액적을 토출하기 위한 수단이 하부 기판의 외곽에 평행하게 형성된 상부 기판을 포함한다. 이에 의해, 액적 토출 수단이 기판의 외곽에 평행하게 형성되어, 고종횡비를 요하는 식각 공정이 불필요하여 액적 토출 장치 제작이 용이해진다.
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公开(公告)号：KR1020120075874A
公开(公告)日：2012-07-09
申请号：KR1020100137763
申请日：2010-12-29
Applicant: 전자부품연구원
Abstract: PURPOSE: A nanoparticle having a multi-layered core-shell structure is provided to maintain color of paint by adding the nanoparticle having a multi-layered core-shell structure to the paint. CONSTITUTION: A nanoparticle having a multi-layered core-shell structure comprises a core and an insulation layer having a shell form which covers the core. In the insulator layer, first insulators and second insulators are laminated by turns. The refractive index of the first insulator is bigger than the refractive index of the second insulator. The core has a hollow shape. The insulator layer is composed of the odd-numbered double layers. The first insulator is composed of one of ITO, ATO, ITO+ATO, IATO, TiO2, Ta2O5, ZnO and ZrO2. The second insulator is composed of one of SiO2, SiN and Al2O3. The nanoparticle is manufactured by either a dry process or a wet method.
Abstract translation: 目的：提供具有多层核 - 壳结构的纳米颗粒，以通过向涂料中加入具有多层核 - 壳结构的纳米颗粒来保持涂料的颜色。 构成：具有多层核 - 壳结构的纳米颗粒包括芯和具有覆盖芯的壳形式的绝缘层。 在绝缘体层中，第一绝缘体和第二绝缘体轮流层叠。 第一绝缘体的折射率大于第二绝缘体的折射率。 芯具有中空形状。 绝缘体层由奇数双层组成。 第一绝缘体由ITO，ATO，ITO + ATO，IATO，TiO2，Ta2O5，ZnO和ZrO2组成。 第二绝缘体由SiO 2，SiN和Al 2 O 3组成。 纳米颗粒通过干法或湿法制造。
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公开(公告)号：KR101091765B1
公开(公告)日：2011-12-08
申请号：KR1020090133454
申请日：2009-12-29
Applicant: 전자부품연구원
IPC: H01L31/0445
CPC classification number: Y02E10/50
Abstract: 본발명은실리콘박막을가지는태양전지소자및 그제작방법에관한것으로, 이러한본 발명은기판상에광전전환의역할을수행하는비정질특성을가지는비정질실리콘층을형성하는과정과, 상기비정질실리콘층상에무전해도금방법으로메탈촉매층을형성하는과정과, 상기메탈촉매층이형성된비정질실리콘층을열처리하여다결정실리콘층을형성하는과정을포함하는것을특징으로하는실리콘박막태양전지소자제작방법및 이러한방법으로제작된실리콘박막태양전지소자를제공한다.
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Patent Agency Ranking
公开(公告)号：KR1020100097549A
公开(公告)日：2010-09-03
申请号：KR1020090016542
申请日：2009-02-26
Applicant: 전자부품연구원
IPC: H01L31/0445 , B82Y40/00
CPC classification number: Y02E10/50 , H01L31/0445 , B82Y40/00
Abstract: PURPOSE: A thin film Si solar cell using Zno nanowire and a fabrication method thereof are provided to form the effective area per unit area of a cell to be bigger by growing the nanowire vertically. CONSTITUTION: A ZnO seed layer(13) is formed at the upper part of a substrate(11). The zinc oxide seed layer is heat-treated. The heat-treated seed layer is putted into the aqueous solution and a plurality of ZnO nanowires(15) is grown up. The zinc oxide nanowire is included and the thin-film silicon of multilayer are formed on the zinc oxide seed layer.
Abstract translation: 目的：提供一种使用Zno纳米线的薄膜Si太阳能电池及其制造方法，通过垂直生长纳米线，形成电池单位面积的有效面积更大。 构成：在衬底（11）的上部形成ZnO种子层（13）。 氧化锌种子层进行热处理。 将热处理的种子层放入水溶液中，并使多个ZnO纳米线（15）长大。 包括氧化锌纳米线，在氧化锌种子层上形成多层薄膜。
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公开(公告)号：KR100972374B1
公开(公告)日：2010-07-27
申请号：KR1020070139362
申请日：2007-12-27
Applicant: 전자부품연구원
Abstract: 본 발명은 아웃 개싱(out-gassing), 탄소나노튜브와 기판의 접착, 수명, 탄소나노튜브 밀도제어 등의 문제점을 효과적으로 해결할 수 있는 동시에 공정이 간단한 냉음극 제조방법에 대한 것으로서 탄소나노튜브 용액을 준비하는 준비 단계 및 상기 탄소나노튜브 용액을 기판 상에 젯 프린팅하는 프린팅 단계를 포함한다.
전계방출 소자, 젯 프린팅, 잉크-
公开(公告)号：KR1020090019226A
公开(公告)日：2009-02-25
申请号：KR1020070083492
申请日：2007-08-20
Applicant: 전자부품연구원
IPC: C03C17/30
CPC classification number: C03C23/006 , C03C17/32 , C03C23/007
Abstract: A silica glass film formation method for passivating surface using polysilazane is provided to have no deformity by impurity when cured in a room temperature and to form glass film having high density. A glass film formation method for passivating surface comprises steps of: coating polysilazane on a substrate; and curing the polysilazane by using atmospheric pressure plasma process. A process time of the curing step is 10-20 minutes. A processing temperature of the curing step is 50~120°C. A process gas of the atmospheric pressure plasma process is argon gas and oxygen gas.
Abstract translation: 提供使用聚硅氮烷钝化表面的二氧化硅玻璃膜形成方法，其在室温下固化时不会产生杂质变形，并形成高密度的玻璃膜。 钝化表面的玻璃成膜方法包括以下步骤：在基材上涂布聚硅氮烷; 并使用大气压等离子体处理固化聚硅氮烷。 固化步骤的处理时间为10-20分钟。 固化步骤的加工温度为50〜120℃。 大气压等离子体工艺的工艺气体是氩气和氧气。
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公开(公告)号：KR1020090019059A
公开(公告)日：2009-02-25
申请号：KR1020070083195
申请日：2007-08-20
Applicant: 전자부품연구원
IPC: B32B33/00
CPC classification number: B32B33/00 , B32B17/06 , B32B38/0008 , B32B2255/205 , B32B2307/402 , B32B2307/554 , B32B2307/584 , B32B2310/14
Abstract: A structure having a glass protection layer formed on the surface thereof is provided to protect the surface of the structure from scratches, wear, finger printing, dust, etc. while maintaining color or gloss of the substrate, to reduce the entire coating process time, and to allow the glass protection layer to exhibit best physical properties even at room temperature. In a structure having a glass protection layer(240) in which a matrix(210) and a silver coating layer(220) are sequentially formed, a structure having a glass protection layer formed on the surface thereof comprises the glass protection layer formed on the silver coating layer using polysilazane. The structure having a glass protection layer formed on the surface thereof further comprises a coloring layer(230) formed between the silver coating layer and glass protection layer to display gloss and color of the structure. The formation of the glass protection layer is performed using atmospheric pressure plasma hardening, pressurized wet hardening, or seam hardening. The sliver coating layer and glass protection layer are formed by spray coating, dip coating, or spin coating. The glass protection layer is coated to a thickness of 0.1 to 5 mum.
Abstract translation: 提供了在其表面上形成有玻璃保护层的结构，以保持结构的表面免受划伤，磨损，指纹印刷，灰尘等，同时保持基底的颜色或光泽，从而减少整个涂布处理时间， 并且即使在室温下也允许玻璃保护层表现出最好的物理性能。 在其中依次形成有基体（210）和银涂层（220）的玻璃保护层（240）的结构中，在其表面上形成有玻璃保护层的结构包括形成在玻璃保护层 银涂层采用聚硅氮烷。 具有形成在其表面上的玻璃保护层的结构还包括形成在银涂层和玻璃保护层之间的着色层（230），以显示结构的光泽和颜色。 玻璃保护层的形成使用大气压等离子体硬化，加压湿固化或接缝硬化进行。 纱线涂层和玻璃保护层通过喷涂，浸涂或旋涂形成。 将玻璃保护层涂覆至0.1〜5μm的厚度。
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公开(公告)号：KR100842395B1
公开(公告)日：2008-07-01
申请号：KR1020060095970
申请日：2006-09-29
IPC: H01L21/66
Abstract: 본 발명은 무전해도금법을 이용한 프로브카드용 탐침구조물 제조 방법에 관한 것으로, 보다 자세하게는 고집적 반도체 칩 또는 디스플레이 회로검사에 사용되는 MEMS 프로브카드용 고경도 탐침구조물의 제조 방법에 관한 것이다.
본 발명의 무전해도금법을 이용한 프로브카드용 탐침구조물 제조 방법은 탐침구조물을 형성하는 제1단계; 및 형성한 상기 탐침구조물을 무전해도금하는 제2단계를 포함한다.
탐침구조물, 무전해도금, 프로브카드, MEMS
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