公开(公告)号：KR100271138B1

公开(公告)日：2001-03-02

申请号：KR1019980001800

申请日：1998-01-22

Applicant: 한국과학기술원

Inventor： 윤준보 ,  이재덕 ,  한철희 ,  김충기 ,  서두원

IPC: B41J2/01

CPC classification number: B41J2/1626 ,  B41J2/1603 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1639 ,  B41J2/1643

Abstract: PURPOSE: An inkjet printer head and method for manufacturing the same is provided to achieve improved productivity and reduce manufacturing cost by arranging a plurality of inkjet nozzles through a single metal plating process. CONSTITUTION: A method comprises a first step of preparing a substrate(201) having an embedded resistor(206) for heating an ink and a bottom metal layer(310) deposited onto the substrate; a second step of spin coating or film coating the photoresistor or polyimide onto the bottom metal layer through a photolithography process, and forming first and second photoresist molds; a third step of forming a preliminary metal barrier layer formed of a Ni-plating layer onto the bottom metal layer, such that the preliminary metal barrier layer has a height corresponding to the height of first and second photoresist molds, and forming a main metal barrier layer(508) in such a manner that the top of the first photoresist mold is completely covered by the Ni-plating layer and the top of the second photoresist mold is not completely covered by the overplating Ni-plating layer, so as to form an inkjet nozzle(207) having a predetermined size and shape; a fourth step of partially etching the first photoresist mold, second photoresist mold and the bottom metal layer, so as to form an ink flow channel(203) within the main metal barrier layer; and a fifth step of partially etching the substrate so as to form a main ink supply path(202) communicated to the ink flow channel.

Abstract translation: 目的：提供一种喷墨打印机头及其制造方法，以通过单个金属电镀工艺布置多个喷墨喷嘴来实现提高的生产率并降低制造成本。 构成：一种方法包括：制备具有用于加热油墨的嵌入式电阻器（206）和沉积在基板上的底部金属层（310）的基板（201）的第一步骤; 通过光刻工艺旋转涂布或将光敏电阻或聚酰亚胺膜涂覆到底部金属层上的第二步骤，以及形成第一和第二光致抗蚀剂模具; 在所述底部金属层上形成由Ni镀层形成的预备金属阻挡层的第三工序，使得所述预备金属阻挡层的高度对应于所述第一和第二光致抗蚀剂模具的高度，并且形成主金属屏障 层（508），使得第一光致抗蚀剂模具的顶部完全被镀镍层覆盖，并且第二光致抗蚀剂模具的顶部未被覆盖的镀镍层完全覆盖，以形成 具有预定尺寸和形状的喷墨喷嘴（207）; 第四步骤，部分地蚀刻第一光致抗蚀剂模具，第二光致抗蚀剂模具和底部金属层，以便在主金属阻挡层内形成墨流动通道（203）; 以及第五步骤，部分地蚀刻所述基板，以形成连通到所述墨流动通道的主墨供给路径（202）。

公开(公告)号：KR1020000011585A

公开(公告)日：2000-02-25

申请号：KR1019990027603

申请日：1999-07-08

Applicant: 한국과학기술원

Inventor： 윤준보 ,  한철희 ,  윤의식 ,  김충기

IPC: H01L27/06

CPC classification number: H01L23/645 ,  H01L23/522 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PURPOSE: A semiconductor device of which area occupied on a substrate is small and of which passive electric device having little serial resistance and large current limit is integrated with a monolithic method is provided. CONSTITUTION: The inductor(1) is composed of three parts which are formed by a single metal plating at the same time; a signal pillar(102) functioned as a path electrically connected with an integrated circuit(100) of a substrate(101); a supporting bar(103) supporting a spiral inductor(104) with a specific number to promote the mechanical stability while manufacturing and using; and the spiral inductor(104) minimizing the electromagnetic influence which can affect the integrated circuit(100) of the lower area and minimizing the signal loss to the substrate(101).

Abstract translation: 目的：提供一种半导体器件，其基板占据的面积小，并且具有小的串联电阻和大电流限制的无源电子器件与单片方法集成。 构成：电感器（1）由同时由单个金属镀层形成的三部分组成， 信号柱（102）用作与衬底（101）的集成电路（100）电连接的路径; 支撑杆（103），其支撑具有特定数量的螺旋电感器（104），以在制造和使用时促进机械稳定性; 和螺旋电感器（104）使得能够影响下部区域的集成电路（100）的电磁影响最小化，并使对衬底（101）的信号损失最小化。

公开(公告)号：KR100149772B1

公开(公告)日：1998-12-01

申请号：KR1019950002234

申请日：1995-02-08

Applicant: 한국과학기술원

Inventor： 허성회 ,  최강식 ,  한철희

IPC: H01L21/3065

Abstract: 본 발명은 자외선램프가 장착된 유도결합 플라즈마 구리식각장치에 관한 것이다. 좀 더 구체적으로, 본 발명은 낮은 온도에서의 구리의 식각율을 높일 수 있으며 대면적의 웨이퍼에도 효과적으로 사용할 수 있도록 유도결합 플라즈마 장치에 자외선 방사수단을 장착한 구리식각장치 및 전기 장치를 이용하여 구리를 식각하는 방법에 관한 것이다. 본 발명의 구리식각장치는 공정쳄버 내에 유전체창, 안테나 및 라디오파 차단모가 형성되고 할로겐가스와 구리의 반응생성물을 탈착하여 웨이퍼의 구리를 식각하는 유도결합 플라즈마 구리식각장치에 있어서, 웨이퍼에 자외선을 방사하기 위한 자외선램프 ; 전기한 유전체창을 자외선투과가 가능하도록 구성한 투사유전체창 ; 전기한 유전체창을 자외선투과가 가능하도록 구성한 투사유전체창 ; 및, 전기한 자외선램프에서 방사된 빛의 최대량을 웨이퍼에 입사시키기 위한 평행광용 자외선거울로 구성된 자외선 방사수단이 장착된 것을 특징으로 하며, 본 발명의 구리식각방법은 할로겐가스와 구리의 반응생성물을 탈착하여 웨이퍼의 구리를 식각하는 유도결합 플라즈마에 의한 구리식각시, 전기 구리식각장치의 자외선 방사수단에 의해 자외선을 입사하여 반응생성물의 탈착에 필요한 에너지를 인가하는 과정을 포함한다.

公开(公告)号：KR1019980073676A

公开(公告)日：1998-11-05

申请号：KR1019970009097

申请日：1997-03-18

Applicant: 한국과학기술원

Inventor： 한철희 ,  이내인 ,  허성회 ,  이진우

IPC: H01L27/115

Abstract: 본 발명은 다결정 실리콘 박막을 이용한 EEPROM 및 플래시 메모리와 그 제조방법에 관한 것으로서, 상세하게는 다결정 실리콘 박막을 이용한 EEPROM 및 플래시 메모리를 싼 가격에 고밀도로 제조하기 위하여 다결정 실리콘 위에 형성된 산화막의 누설전류, 절연파괴전압 및 QBD(charge to breakdowm) 특성이 단결정 실리콘 위에 형성된 열산화막과 유사한 산화막을 게이트 산화막으로 이용하는 것이다.
이를 위해 본 발명에서는 게이트 산화막을 ICP(Inductively Coupled Plasma), ECR (Electron Cyclotron Resonance) 및 Helicon 등의 전극을 사용하는 고밀도 플라즈마 발생장치를 이용하여 산소 분위기 또는 NO 가스 및 N
2 O가스와 같은 질소원자를 포함한 가스 분위기에서 N
2 O 플라즈마 산화막으로 형성한다. 또한 플로팅 게이트와 컨트롤 게이트 사이의 절연체 역시 플라즈마 산화법에 의해 산화막을 형성함으로써 메모리 셀의 신뢰성을 향상을 꾀한 것이다.
이로써, 다결정 실리콘 박막을 이용한 EEPROM 및 플래시 메모리를 싼 가격에 고밀도로 제조할 수 있다.

公开(公告)号：KR100465914B1

公开(公告)日：2005-01-13

申请号：KR1020020016681

申请日：2002-03-27

Applicant: 한국과학기술원

Inventor： 이춘섭 ,  이재덕 ,  황치호 ,  한철희

IPC: B81B7/00

Abstract: PURPOSE: A method for fabricating a micro-sized driving device is provided to drive the micro-sized driving device with low operating voltage by allowing electrodes having a comb shape to have fine interval. CONSTITUTION: A substrate is firstly prepared. Then, a first oxide layer, a first silicon layer, a second oxide layer, a nitride layer and a third oxide layer are sequentially deposited on the substrate. A first electrode pattern is formed on the third oxide layer by using a photosensitive film. The third oxide layer, the nitride layer, the second oxide layer and the first silicon layer are etched along the first electrode pattern in order to expose the first oxide layer, thereby obtaining a first electrode having a plurality of fingers. An oxide layer is formed at a lateral portion of the first electrode. Then, a second electrode is formed by etching a fourth oxide layer and a second silicon layer formed on the second silicon layer. After that, the first oxide layer, the second oxide layer, the lateral oxide layer, the fourth oxide layer and the nitride layer are removed, thereby achieving a micro-sized driving device.

Abstract translation: 目的：提供一种用于制造微型驱动装置的方法，以通过使具有梳形形状的电极具有精细间隔来以低操作电压驱动微型驱动装置。 构成：首先准备基材。 然后，在衬底上顺序沉积第一氧化物层，第一硅层，第二氧化物层，氮化物层和第三氧化物层。 通过使用光敏膜在第三氧化物层上形成第一电极图案。 沿着第一电极图案蚀刻第三氧化物层，氮化物层，第二氧化物层和第一硅层以暴露第一氧化物层，由此获得具有多个指状物的第一电极。 氧化物层形成在第一电极的横向部分处。 然后，通过蚀刻形成在第二硅层上的第四氧化物层和第二硅层来形成第二电极。 之后，去除第一氧化物层，第二氧化物层，横向氧化物层，第四氧化物层和氮化物层，由此实现微尺寸驱动装置。

公开(公告)号：KR100374205B1

公开(公告)日：2003-03-04

申请号：KR1020000000017

申请日：2000-01-03

Applicant: 한국과학기술원

Inventor： 이춘섭 ,  한철희

IPC: B81C1/00

CPC classification number: G02B3/0056 ,  G02B3/0012

Abstract: A method of fabricating a refractive silicon microlens by using micro-machining technology. The method of fabricating a refractive silicon microlens according to the present invention comprises the steps of forming a boron-doped region on a silicon substrate, and selectively removing regions of the substrate except for the boron-doped region to form a lens comprised of only the boron-doped region. With the method of the present invention, it is possible to fabricate a two-dimensional infrared silicon microlens array. By using such a two-dimensional infrared silicon microlens array in an infrared sensor, the detectivity of the infrared sensor can be increased by 3.4 times, which is the refraction index of silicon. In addition, the two-dimensional infrared silicon microlens array of the present invention can be used with commercial infrared telecommunication devices.

Abstract translation: 一种通过使用微机械加工技术制造折射硅微透镜的方法。 根据本发明的制造折射硅微透镜的方法包括以下步骤：在硅衬底上形成硼掺杂区，以及选择性地除去除硼掺杂区之外的衬底区域以形成仅由 硼掺杂区。 利用本发明的方法，可以制造二维红外硅微透镜阵列。 通过在红外传感器中使用这种二维红外硅微透镜阵列，红外传感器的探测性可以增加3.4倍，这是硅的折射率。 另外，本发明的二维红外硅微透镜阵列可以与商业红外电信设备一起使用。

公开(公告)号：KR100368930B1

公开(公告)日：2003-01-24

申请号：KR1020010016404

申请日：2001-03-29

Applicant: 한국과학기술원

Inventor： 윤준보 ,  윤의식 ,  김충기 ,  한철희

IPC: H01L29/00

CPC classification number: H01L27/08 ,  H01L23/5227 ,  H01L23/66 ,  H01L2223/6622 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H05K3/4092 ,  H01L2924/00

Abstract: Disclosed are a three dimensional metal device floated over a semiconductor substrate, a circuit thereof, and a manufacturing method thereof. A passive electric device for wireless communications and optical communications, such as a spiral inductor, a solenoid inductor, a spiral transformer, a solenoid transformer, a micro mirror, a transmission line is floated over and apart by a few ten micrometers from the semiconductor substrate. These three dimensional metal devices remarkably decrease a signal loss to the substrate, to thereby enhance the device performance, to allow a modeling of a device separated from the substrate, and to make it possible to form an integrated circuit below the device. Further, the three dimensional metal device is manufactured in a monolithic method on the integrated circuit such that it does not affect on the integrated circuit formed therebelow.

Abstract translation: 公开了浮在半导体衬底上的三维金属器件，其电路及其制造方法。 用于诸如螺旋电感器，螺线管电感器，螺旋变压器，螺线管变压器，微镜，传输线的无线通信和光通信的无源电力设备从半导体衬底浮起并隔开几十微米 。 这些三维金属器件显着减小了到衬底的信号损耗，从而增强了器件性能，允许对与衬底分离的器件进行建模，并且使得有可能在器件下方形成集成电路。 此外，三维金属器件在集成电路上以单片方式制造，使得它不影响在其下形成的集成电路。

公开(公告)号：KR1020020072659A

公开(公告)日：2002-09-18

申请号：KR1020010012605

申请日：2001-03-12

Applicant: 한국과학기술원

Inventor： 한철희 ,  이춘섭

IPC: G02B3/00

Abstract: PURPOSE: A method for fabricating a micro lens is provided, which has a cross section in a shape of a hyperhemisphere. CONSTITUTION: According to the method, a sacrificial layer(20a) is formed on a silicon or glass substrate(10), and an epilayer pattern whose cross section is deformed into a sphere shape by a surface tension according to the heating is formed on the above sacrificial layer. And the sacrificial layer is laterally etched using the epilayer pattern. And the epilayer pattern is reflowed by heating the epilayer pattern. And at least a part of the cross section of the micro lens is in a hyperhemisphere shape.

Abstract translation: 目的：提供一种制造微透镜的方法，该微透镜具有高分子半球形状的横截面。 构成：根据该方法，在硅或玻璃基板（10）上形成牺牲层（20a），并且，在该玻璃基板（10）上形成有通过根据加热的表面张力将截面变形为球面的外延图形 以上牺牲层。 并且使用外延层图案横向蚀刻牺牲层。 并且通过加热外延图案来回流外延图案。 并且微透镜的截面的至少一部分处于大半球形状。

公开(公告)号：KR1020020010162A

公开(公告)日：2002-02-04

申请号：KR1020000043255

申请日：2000-07-27

Applicant: 한국과학기술원

Inventor： 이춘섭 ,  이재덕 ,  한철희

IPC: H01J1/304

Abstract: PURPOSE: A method for forming a fine interval using chemical mechanical polishing and a method for manufacturing a lateral FEA(field emission array) are provided to obtain an FEA having low voltage and high current driving characteristic and uniform field emission characteristic. CONSTITUTION: A lateral FEA is manufactured by sequentially forming a first silicon oxide film and a first silicon film on a substrate(210), injecting dopant to the first silicon film, forming a mesa type photosensitive pattern on the first silicon film, forming a first probe layer by etching the first silicon film to expose the first silicon oxide film, forming a second silicon oxide film on the first probe layer, forming a silicon film over the second silicon layer, injecting dopant to the second silicon layer, forming a second probe layer by chemically mechanically polishing the second silicon film to expose the second silicon oxide film, selectively removing the second silicon oxide layer to form a fine interval(A') between the first and the second probe layers(230a,250a), removing the first silicon oxide film under the side bottom of the first probe layer to form a first silicon oxide film pattern(220a), and forming metal wires(260) on the first and the second probe layers(230a,250a), respectively.

Abstract translation: 目的：提供使用化学机械抛光形成精细间隔的方法和用于制造横向FEA（场致发射阵列）的方法，以获得具有低电压和高电流驱动特性以及均匀的场发射特性的FEA。 构成：通过在基板（210）上依次形成第一氧化硅膜和第一硅膜，向第一硅膜注入掺杂剂，在第一硅膜上形成台面型感光图案，形成第一 通过蚀刻第一硅膜以暴露第一氧化硅膜，在第一探针层上形成第二氧化硅膜，在第二硅层上形成硅膜，向第二硅层注入掺杂剂，形成第二探针 层，通过化学机械抛光所述第二硅膜以暴露所述第二氧化硅膜，选择性地除去所述第二氧化硅层以在所述第一和第二探针层（230a，250a）之间形成细间隔（A'）， 在第一探针层的侧面底部形成氧化硅膜，以形成第一氧化硅膜图案（220a），并且在第一和第二探针层（230a，25）上形成金属线（260） 0a）。

公开(公告)号：KR100260281B1

公开(公告)日：2000-07-01

申请号：KR1019970066889

申请日：1997-12-09

Applicant: 한국과학기술원

Inventor： 허성회 ,  한철희

IPC: H01L27/11

CPC classification number: G11C14/00

Abstract: PURPOSE: A nonvolatile static memory device is provided to improve an operating speed of a device by adding a nonvolatile characteristic to a static memory device. CONSTITUTION: A nonvolatile static memory device is formed by adding a nonvolatile characteristic to a static memory device comprising a drive element(16), a load element(17), and an access element(19). A boron implanted layer is formed on both sides of a silicon substrate. A floating gate and a control gate are formed on the silicon substrate. A tunneling oxide layer is formed at a lower portion of the floating gate. The nonvolatile characteristic is added to the static memory device by using a difference of threshold voltages according to a charge stored in the floating gate.

Abstract translation: 目的：提供一种非易失性静态存储器件，通过向静态存储器件添加非易失性特性来提高器件的工作速度。 构成：通过向包括驱动元件（16），负载元件（17）和存取元件（19）的静态存储器件添加非易失性特性来形成非易失性静态存储器件。 在硅衬底的两侧形成硼注入层。 在硅衬底上形成浮栅和控制栅极。 隧道氧化层形成在浮动栅极的下部。 通过使用根据存储在浮动栅极中的电荷的阈值电压的差异将非易失性特性添加到静态存储器件。