태양 전지 및 그 제조 방법
    12.
    发明公开
    태양 전지 및 그 제조 방법 有权
    太阳能电池及其相同方法

    公开(公告)号:KR1020140023778A

    公开(公告)日:2014-02-27

    申请号:KR1020120090231

    申请日:2012-08-17

    CPC classification number: Y02E10/549 Y02P70/521 H01L51/42

    Abstract: A solar cell according to the present invention includes a substrate, a first electrode which is formed on the substrate, a metal oxide layer which is formed on the first electrode and includes a protrusion part, an active layer which is formed on the metal oxide layer, a buffer layer which is formed on the active layer, and a second electrode which is formed on the buffer layer.

    Abstract translation: 根据本发明的太阳能电池包括基板,形成在基板上的第一电极,形成在第一电极上并包括突出部分的金属氧化物层,形成在金属氧化物层上的有源层 形成在有源层上的缓冲层和形成在缓冲层上的第二电极。

    나노구조물의 갭필방법 및 이를 이용한 유기발광소자의 제조방법
    13.
    发明授权
    나노구조물의 갭필방법 및 이를 이용한 유기발광소자의 제조방법 有权
    在纳米结构中填充空隙的方法和使用它的OLED的制备方法

    公开(公告)号:KR100995897B1

    公开(公告)日:2010-11-22

    申请号:KR1020100009904

    申请日:2010-02-03

    CPC classification number: H01L51/56 B01J19/123 B82Y20/00 C08L101/00

    Abstract: PURPOSE: A gap filling method of a nanostructure and a manufacturing method of an organic light-emitting device(OLED) using thereof are provided to form an oxide thin film with a flat surface by pressing a gap of the nanostructure with a mold. CONSTITUTION: A gap filling method of a nanostructure comprises the following steps: supplying a substrate with the nanostructure including a gap on the upper side(S1); spreading a coating composition to fill the gap(S2); pressing the layer of the coating composition with a mold(S3); irradiation ultraviolet rays to the coating composition layer(S4); heating the layer to form a metal oxide thin film; and separating the mold from the metal oxide thin film(S5).

    Abstract translation: 目的:提供纳米结构的间隙填充方法和使用其的有机发光器件(OLED)的制造方法,以通过用模具压制纳米结构的间隙来形成具有平坦表面的氧化物薄膜。 构成:纳米结构的间隙填充方法包括以下步骤:向衬底提供包括在上侧的间隙的纳米结构(S1); 铺展涂料组合物以填补间隙(S2); 用模具挤压涂层组合物层(S3); 向涂料组合物层照射紫外线(S4); 加热层以形成金属氧化物薄膜; 并将模具与金属氧化物薄膜分离(S5)。

    나노임프린트를 이용한 금속 산화박막 패턴 형성방법 및 LED 소자의 제조방법
    14.
    发明授权
    나노임프린트를 이용한 금속 산화박막 패턴 형성방법 및 LED 소자의 제조방법 有权
    使用纳米薄膜的金属氧化物薄膜的制作方法和发光二极管的制造方法

    公开(公告)号:KR100965904B1

    公开(公告)日:2010-06-24

    申请号:KR1020090082592

    申请日:2009-09-02

    Abstract: PURPOSE: A patterning method of a metal oxide thin film using nano-imprint and manufacturing method of a light emitting diode are provided to reduce a pattern process by removing a process of covering an ultraviolet resin additionally. CONSTITUTION: A photosensitivity metal-organic precursor solution is coated on a substrate(S1). A photosensitivity metal-organic precursor coating layer is pressurized into a patterned mold(S2). Ultraviolet ray is radiated on the pressured metal-organic precursor coating layer to form a hardened metal oxide film pattern(S3). The patterned mold is removed from the metal oxide thin film pattern(S4). A plastic process of processing the metal oxide thin film pattern with a thermal process is performed.

    Abstract translation: 目的:提供使用纳米压印的金属氧化物薄膜的图案化方法和发光二极管的制造方法,以通过除去另外掩盖紫外线树脂的工艺来减少图案处理。 构成:将光敏金属 - 有机前体溶液涂覆在基材上(S1)。 将光敏金属 - 有机前体涂层加压成图案化模具(S2)。 将紫外线照射在加压的金属 - 有机前体涂层上以形成硬化的金属氧化物膜图案(S3)。 从金属氧化物薄膜图案去除图案化的模具(S4)。 进行利用热处理来处理金属氧化物薄膜图案的塑性工艺。

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