公开(公告)号：KR100937591B1

公开(公告)日：2010-01-20

申请号：KR1020070132339

申请日：2007-12-17

Applicant: 한국전자통신연구원

Inventor： 박미란 ,  권오균 ,  박정우 ,  김경옥

IPC: H01L31/12

CPC classification number: G02F1/01708 ,  B82Y20/00 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2201/302 ,  G02F2201/34 ,  G02F2203/02

Abstract: 반도체 광전 집적회로 및 그 형성 방법을 제공한다. 이 반도체 광전 집적회로는 기판 상에 배치되고 입력단 및 출력단을 포함하는 광도파로, 광도파로 상에 형성된 광 격자, 및 광 격자 상에 배치된 광 능동 소자를 포함한다.

公开(公告)号：KR1020090064951A

公开(公告)日：2009-06-22

申请号：KR1020070132339

申请日：2007-12-17

Applicant: 한국전자통신연구원

Inventor： 박미란 ,  권오균 ,  박정우 ,  김경옥

IPC: H01L31/12

CPC classification number: G02F1/01708 ,  B82Y20/00 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2201/302 ,  G02F2201/34 ,  G02F2203/02

Abstract: A semiconductor optoelectronic integrated circuit and a forming method thereof are provided to increase a degree of integration by arranging an optical active element on an optical grating of an optical waveguide. A semiconductor optoelectronic integrated circuit includes an optical waveguide(105), an optical grating(107), and an optical active element. The optical waveguide is arranged on a substrate. The optical waveguide includes an input terminal and an output terminal. The optical grating is formed on the optical waveguide. The optical active element is formed on the optical grating. The optical active element receives an optical signal from the optical waveguide through the optical grating. The optical active element modulates the received optical signal.

Abstract translation: 提供半导体光电集成电路及其形成方法，以通过将光学有源元件布置在光波导的光栅上来增加集成度。 半导体光电集成电路包括光波导（105），光栅（107）和光有源元件。 光波导布置在基板上。 光波导包括输入端子和输出端子。 光栅形成在光波导上。 光学有源元件形成在光栅上。 光学有源元件通过光栅从光波导接收光信号。 光学有源元件调制接收到的光信号。

公开(公告)号：KR1020070061043A

公开(公告)日：2007-06-13

申请号：KR1020060036356

申请日：2006-04-21

Applicant: 한국전자통신연구원

Inventor： 한원석 ,  권오균 ,  송현우 ,  박미란

IPC: H01S5/30

CPC classification number: H01S5/2009 ,  H01L21/761 ,  H01L29/0646 ,  H01L31/141 ,  H01S5/2077

Abstract: A semiconductor laser diode using change of an energy band structure is provided to raise an electric barrier through a critical value changing from type 1 to type 2. A semiconductor laser diode using change of an energy band structure includes an active layer, a cladding layer, a second compound semiconductor layer, and a third compound semiconductor layer. The active layer has a structure of a quantum well. The cladding layer is contacted to one side of the active layer, and is composed of a first compound semiconductor layer. The second compound semiconductor layer is contacted to the other end of the active layer, and forms an energy step for the active layer. The third compound semiconductor layer is inserted into the second semiconductor layer, and separates the second compound semiconductor layer to have a critical point having a non-conductive band energy step of "0" with the second compound semiconductor layer.

Abstract translation: 提供使用能带结构变化的半导体激光二极管，以通过从类型1改变为类型2的临界值来提高电势。使用能带结构的改变的半导体激光二极管包括有源层，包层， 第二化合物半导体层和第三化合物半导体层。 有源层具有量子阱的结构。 包覆层与有源层的一侧接触，由第一化合物半导体层构成。 第二化合物半导体层与活性层的另一端接触，形成有源层的能量步骤。 将第三化合物半导体层插入到第二半导体层中，并且使第二化合物半导体层与第二化合物半导体层分离为具有“0”的非导电带能级的临界点。

公开(公告)号：KR1020070061003A

公开(公告)日：2007-06-13

申请号：KR1020060027972

申请日：2006-03-28

Applicant: 한국전자통신연구원

Inventor： 권오균 ,  박미란 ,  한원석 ,  송현우

IPC: H01L21/306 ,  H01S5/183

CPC classification number: H01L21/30621 ,  H01S5/183 ,  H01S5/2081

Abstract: A method for etching a multi-layer of group III-V semiconductor materials and a method for manufacturing a vertical cavity surface emitting laser device are provided to obtain clearness and smoothness of an etched surface by etching the multi-layer with plasma of a mixed gas including Cl2, Ar, CH4, and H2. A first semiconductor layer(22) is formed with group III-V semiconductors. A second semiconductor layer(24) is formed with group III-V semiconductors that are different from the group III-V semiconductors of the first semiconductor layer. A method for etching a lamination structure including the first and second semiconductor layers includes a process for etching the lamination structure by exposing the lamination structure to plasma of a mixed gas including Cl2, Ar, CH4, and H2.

Abstract translation: 提供一种用于蚀刻III-V族III族半导体材料的多层的方法和用于制造垂直腔表面发射激光器件的方法，以通过用混合气体的等离子体蚀刻多层来获得蚀刻表面的清晰度和平滑度 包括Cl2，Ar，CH4和H2。 第III-V族半导体形成第一半导体层（22）。 第二半导体层（24）由与第一半导体层的III-V族半导体不同的III-V族半导体形成。 蚀刻包括第一和第二半导体层的叠层结构的方法包括通过将层压结构暴露于包括Cl 2，Ar，CH 4和H 2的混合气体的等离子体来蚀刻层压结构的方法。

公开(公告)号：KR100403674B1

公开(公告)日：2003-10-30

申请号：KR1020020003187

申请日：2002-01-19

Applicant: 한국전자통신연구원

Inventor： 박미란 ,  이규석

IPC: H01L21/335

Abstract: PURPOSE: A method for fabricating high power and high frequency(RF) high electron mobility transistor(HEMT) by quenching is provided to improve a contact characteristic and an electrical characteristic by improving the uniformity of the surface of a metal layer and adhesion on an interface between the metal layer and a semiconductor layer. CONSTITUTION: The first and second semiconductor layers that have different bandgap to form a heterojunction are sequentially formed on a substrate. A source/drain made of a multiple metal layer is formed on the second semiconductor layer. A heat treatment process is performed on the substrate having the source/drain to make an ohmic contact between the source/drain and the second semiconductor layer. The first quenching is performed on the resultant structure with no time delay. A gate made of a multiple metal layer is formed on the second semiconductor layer between the source/drain. A heat treatment process is performed on the substrate including the gate to make a Schottky contact between the gate and the semiconductor layer. The second quenching is performed on the resultant structure with no time delay.

Abstract translation: 目的：提供一种通过淬火来制造高功率和高频（RF）高电子迁移率晶体管（HEMT）的方法，以通过提高金属层表面的均匀性和界面上的附着力来改善接触特性和电特性 在金属层和半导体层之间。 构成：具有不同带隙以形成异质结的第一和第二半导体层顺序地形成在衬底上。 在第二半导体层上形成由多重金属层构成的源极/漏极。 在具有源极/漏极的衬底上执行热处理工艺，以在源极/漏极和第二半导体层之间形成欧姆接触。 在没有时间延迟的情况下对所得结构进行第一次淬火。 在源极/漏极之间的第二半导体层上形成由多层金属层构成的栅极。 在包括栅极的衬底上执行热处理工艺，以在栅极和半导体层之间形成肖特基接触。 在没有时间延迟的情况下对所得结构进行第二次淬火。

公开(公告)号：KR102216864B1

公开(公告)日：2021-02-19

申请号：KR1020170162241

申请日：2017-11-29

Applicant: 한국전자통신연구원

Inventor： 김남제 ,  권오균 ,  박미란 ,  안신모 ,  한원석

IPC: H01S5/12

Abstract: 본발명은단일모드분포궤환레이저다이오드를개시한다. 그의다이오드는제 1 및제 2 분포영역들과, 상기제 1 및제 2 분포영역들사이의위상천이영역을갖는기판과, 상기기판상에배치된하부클래드층과, 상기제 1 분포영역및 상기제 2 분포영역상의상기하부클래드층 내에각각배치된제 1 및제 2 브래그회절격자들과, 상기하부클래드층 상에배치되고, 상기제 1 분포영역에서상기제 2 분포영역까지연장하는도파로와, 상기도파로상에배치된상부클래드층과, 상기상부클래드층 상에배치된적어도하나의전극을포함한다.

公开(公告)号：KR1020160027597A

公开(公告)日：2016-03-10

申请号：KR1020140115621

申请日：2014-09-01

Applicant: 한국전자통신연구원

Inventor： 박미란 ,  권오균 ,  김현수 ,  정종술

IPC: G02B6/42

CPC classification number: G02B6/4214 ,  G02B6/4221 ,  G02B6/4249 ,  G02B6/4257

Abstract: 본명세서에서는다채널의광신호를송신또는수신하는다채널광모듈장치및 그것의제조방법을개시한다. 본명세서에따른다채널광모듈장치는, 광신호를전송하는다채널광섬유블록, 광신호를수신하는어레이광수신소자부를포함하는서브마운트및 금속광학벤치상에배치되고다채널광섬유블록으로부터전송되는광신호를어레이광수신소자부로유도하는반사부를포함하고, 광신호의어레이광수신소자부로의유도를위해반사부는어레이광수신소자부와수동정렬되고다채널광섬유블록은어레이광수신소자부와능동정렬된다.

Abstract translation: 多通道光模块装置及其制造方法技术领域本发明涉及发送或接收多信道光信号的多信道光模块装置及其制造方法。 根据本发明，多通道光模块装置包括：发送光信号的多通道光纤块; 子装置，包括用于接收光信号的阵列光接收元件部分; 以及反射部，放置在金属光学台上，并且将从多通道光纤块发送的光信号引导到阵列光接收元件部。 为了将光信号引导到阵列光接收元件部分，反射部分与阵列光接收元件部分手动配置，并且多通道光纤块主动地布置有阵列光接收元件部分。

公开(公告)号：KR1020140113138A

公开(公告)日：2014-09-24

申请号：KR1020130028128

申请日：2013-03-15

Applicant: 한국전자통신연구원

Inventor： 박미란 ,  김현수 ,  정종술 ,  권오균

IPC: G02B6/42 ,  G02B6/32 ,  G02B5/08

CPC classification number: H04B10/60 ,  G02B6/4214 ,  G02B6/4281 ,  H04B10/2504 ,  H04B10/40 ,  H04B10/50

Abstract: Disclosed is s a multi-channel optical reception module. The module comprises; a bench; a first substrate which is arranged on one side of the bench and has grooves; optical fibers which are arranged inside the grooves of the first substrate and transfer an optical signal; a first lens which is arranged on the first substrate and collimates the optical signal; a second substrate which is separated from the first substrate and is arranged on the other side of the bench; an optical reception element which is arranged on the second substrate and receives the optical signal; a second lens which concentrates the optical signal on the optical reception element on the optical reception element; a mirror which reflects the optical signal between the first and second lenses; and a block which fixates the mirror to be tilted from a sidewall of the first substrate to the second substrate and has a penetration hole which transfers the optical signal between the first and second lenses without refraction.

Abstract translation: 公开了一种多通道光接收模块。 该模块包括： 长凳 第一基板，其布置在台架的一侧并具有凹槽; 光纤布置在第一基板的凹槽内并传送光信号; 布置在第一基板上并准直光信号的第一透镜; 第二基板，其与所述第一基板分离并且布置在所述台架的另一侧; 光接收元件，被布置在第二基板上并接收光信号; 第二透镜，其将光信号集中在光接收元件上的光接收元件上; 反射第一和第二透镜之间的光信号的反射镜; 以及将镜子从第一基板的侧壁倾斜固定到第二基板的块，并且具有在第一和第二透镜之间不折射地传递光信号的穿透孔。

公开(公告)号：KR1020140104801A

公开(公告)日：2014-08-29

申请号：KR1020130018754

申请日：2013-02-21

Applicant: 한국전자통신연구원

Inventor： 정종술 ,  김현수 ,  박미란 ,  최병석 ,  권오균

IPC: H04B10/572 ,  H04J14/02

CPC classification number: H04J14/0221 ,  H04B10/506 ,  H04B10/564

Abstract: According to an embodiment of the present invention, a wavelength division multiplexing (WDM) optical transmitter includes first to n^th optical transmitters which output first to n^th optical signals having different wavelengths; a wavelength multiplexer which generates an output optical signal by multiplexing the first to n^th optical signals; a tap coupler which receives the output optical signal, and which generates an optical signal for control based on a part of the output optical signal; a light receiving device for control which receives the optical signal for control, and which outputs an optical current based on the optical signal for control; and a controller which separately controls the first to n^th optical transmitters based on the optical current, wherein the controller includes a look-up table, sequentially detects driving conditions of the first to n^th optical transmitters, and stores the detected driving conditions in the look-up table.

Abstract translation: 根据本发明的一个实施例，波分多路复用（WDM）光发射机包括第一至第n个光发射机，其输出具有不同波长的第一至第n个光信号; 波长多路复用器，通过多路复用第一至第n个光信号来产生输出光信号; 接收输出光信号并根据输出光信号的一部分产生用于控制的光信号的抽头耦合器; 用于控制的光接收装置，其接收用于控制的光信号，并且基于用于控制的光信号输出光电流; 以及控制器，其基于所述光电流分别控制所述第一至第n光发射机，其中所述控制器包括查找表，顺序地检测所述第一至第n光发射机的驱动条件，并存储所检测的驾驶条件 在查表中。

公开(公告)号：KR1020130071747A

公开(公告)日：2013-07-01

申请号：KR1020110139138

申请日：2011-12-21

Applicant: 한국전자통신연구원

Inventor： 김현수 ,  정종술 ,  박미란 ,  최병석 ,  권오균

IPC: G02B6/42

CPC classification number: G02B6/43 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/4224 ,  G02B6/4232

Abstract: PURPOSE: A hybrid-integrated optical waveguide platform with an optical transmission device and an optical active device and a fabrication method thereof are provided to bond a monitoring photodiode to an over-cladding layer of a planar lightwave circuit (PLC) via flip-chip bonding, of which a spot size is increased by reducing the line width of a core layer of an optical waveguide, thereby monitoring output light including an optical coupling loss that occurs during the flip-chip bonding. CONSTITUTION: The optical waveguide platform (10) with hybrid-integrated an optical transmission device (30) and an optical active device comprises an optical waveguide region (20) formed by stacking an under-cladding layer (101), a core layer (102) and an over-cladding layer on a substrate (100); a trench (400) region formed by etching a portion of the optical waveguide region; and a spot expanding region formed on the core layer in the optical waveguide region. The optical transmitter device is mounted in the trench region and the optical active device is flip-bonded to the spot expanding region. A monitoring photodiode (40) is flip-chip bonded to the spot expanding region of the core layer of an optical waveguide.

Abstract translation: 目的：提供一种具有光传输器件和光学有源器件及其制造方法的混合集成光波导平台，其通过倒装芯片接合将监控光电二极管耦合到平面光波电路（PLC）的上敷层 ，其中通过减小光波导的芯层的线宽来增加光点尺寸，从而监视包括在倒装芯片接合期间发生的光耦合损耗的输出光。 构成：具有混合集成光传输装置（30）和光学有源装置的光波导平台（10）包括通过堆叠下包层（101），芯层（102） ）和衬底（100）上的上覆层; 通过蚀刻所述光波导区域的一部分形成的沟槽（400）区域; 以及形成在光波导区域的芯层上的点扩展区域。 光发射器装置安装在沟槽区域中，并且光学有源器件被翻转接合到点扩展区域。 监视光电二极管（40）被倒装芯片接合到光波导的芯层的点扩展区域。